CN102385985A - Metal thin film capacitor and preparation method thereof - Google Patents
Metal thin film capacitor and preparation method thereof Download PDFInfo
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- CN102385985A CN102385985A CN2011102240684A CN201110224068A CN102385985A CN 102385985 A CN102385985 A CN 102385985A CN 2011102240684 A CN2011102240684 A CN 2011102240684A CN 201110224068 A CN201110224068 A CN 201110224068A CN 102385985 A CN102385985 A CN 102385985A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 73
- 239000002184 metal Substances 0.000 title claims abstract description 73
- 239000003990 capacitor Substances 0.000 title claims abstract description 15
- 239000010409 thin film Substances 0.000 title claims abstract description 11
- 238000002360 preparation method Methods 0.000 title claims description 14
- 239000010408 film Substances 0.000 claims abstract description 123
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 12
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052709 silver Inorganic materials 0.000 claims abstract description 8
- 239000004332 silver Substances 0.000 claims abstract description 8
- 239000010955 niobium Substances 0.000 claims abstract description 6
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 239000000956 alloy Substances 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010949 copper Substances 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 239000011265 semifinished product Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 31
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 22
- 238000002161 passivation Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 239000000047 product Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000012856 packing Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 4
- 150000002739 metals Chemical class 0.000 abstract description 3
- 239000003989 dielectric material Substances 0.000 abstract description 2
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001257 Nb alloy Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- BVSORMQQJSEYOG-UHFFFAOYSA-N copper niobium Chemical compound [Cu].[Cu].[Nb] BVSORMQQJSEYOG-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000036314 physical performance Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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Abstract
本发明公开了一种金属薄膜电容，包括绝缘基板，在绝缘基板的顶部设有带引出端Ⅰ的金属薄膜电极Ⅰ，在引出端Ⅰ接口外的金属薄膜电极Ⅰ表面上设有介质薄膜，在介质薄膜的顶部设有带引出端Ⅱ的金属薄膜电极Ⅱ。本发明采用五氧化二钽等既绝缘，又具有良好的化学稳定性的材料制成的薄膜作为电介质，解决一般薄膜电容器电介质的介电常数低，耐热差，成膜性差，机械强度低等问题。而且通过掩膜工艺，沉积两层金属膜作为上下电极，极大地减少了金属用量，降低了生产成本，制作工艺简单。选用钽、铌、铜、银等金属或它们合金作为金属薄膜电极，它们的电阻率很低，并且可耐高温高压，具有较高的稳定性，可适应多种复杂环境。
The invention discloses a metal thin film capacitor, which comprises an insulating substrate, a metal thin film electrode I with a lead end I is arranged on the top of the insulating substrate, and a dielectric film is arranged on the surface of the metal thin film electrode I outside the interface of the lead end I. The top of the dielectric film is provided with a metal film electrode II with a lead-out terminal II. The present invention uses tantalum pentoxide and other insulating materials and films made of good chemical stability as the dielectric to solve the problems of low dielectric constant, poor heat resistance, poor film-forming property, and low mechanical strength of general film capacitor dielectrics. question. Moreover, two layers of metal films are deposited as the upper and lower electrodes through the mask process, which greatly reduces the amount of metal used, reduces the production cost, and has a simple manufacturing process. Tantalum, niobium, copper, silver and other metals or their alloys are selected as the metal film electrodes. Their resistivity is very low, and they can withstand high temperature and high pressure, have high stability, and can adapt to various complex environments.
Description
Technical field
The present invention relates to a kind of electric capacity and preparation method thereof, especially a kind of metallic film electric capacity and preparation method thereof.
Background technology
The thin-film capacitor range of capacity is wide, and operating voltage range is extremely wide, good temp characteristic, and stability is high, can realize metallization, has self-healing property, is widely used in a plurality of industries such as electronics, space flight, communication, military affairs.Along with China's digitlization, informationization, networked construction process are constantly accelerated; And the development of very lagre scale integrated circuit (VLSIC); Require electronic component miniaturization, filmization and multifunction, this makes conventional plastic film and silicon dioxide reach certain limit as main capacitor dielectric material.Problems such as present electric capacity exists the dielectric constant of medium low, and heat-resisting poor, film forming is poor, and mechanical strength is low.
Summary of the invention
The objective of the invention is: a kind of metallic film electric capacity and preparation method thereof is provided, and its each item performance is outstanding, with low cost, is easy to industrialization, to overcome the deficiency of prior art.
The present invention is achieved in that metallic film electric capacity; Comprise insulated substrate; Be provided with the metal film electrode
of band exit
at the top of insulated substrate; Be provided with dielectric film on metal film electrode
surface outside exit
interface, be provided with the metal film electrode
of band exit
at the top of dielectric film.
On exit
and exit
surface in addition, all be provided with the passivation protection film, its material is silicon dioxide or silicon nitride.Material requirements as the passivation protection film has good insulation performance and temperature stability.
The thickness of metal film electrode
and metal film electrode
is respectively 0.1～0.3 μ m, and their material is one or more the alloy in tantalum, niobium, aluminium, copper, the silver.It is very low that these metals and their alloy have resistivity, but high temperature high voltage resistant has high stability, can adapt to characteristics such as various complicated.
The thickness of dielectric film is 0.04～0.06 μ m, and its material is tantalum pentoxide or aluminium oxide.Their dielectric constant is high, good heat resistance, and good film-forming property, mechanical strength is high, and the insulating properties energy consumption of the dielectric film for preparing can prevent capacitance short-circuit, reduces leakage current.
The preparation method of metallic film electric capacity; Adopt mask technique; Deposition more than one metal film electrode
obtains semi-finished product A on insulated substrate; On semi-finished product A, adopt mask technique to deposit dielectric film, obtain semi-finished product B; On semi-finished product B, adopt mask technique to deposit metal film electrode
; And on metal film electrode
and metal film electrode
, reserve exit
and exit
respectively, obtain semi-finished product C; After semi-finished product C cut, obtain the single metal thin-film capacitor, and draw capacitance electrode from exit, packing obtains finished product after handling again.
On the semi-finished product C surface beyond the exit, deposit the passivation protection film.
Metal film electrodes
, dielectric film and metal film electrodes
deposition method is a physical or chemical vapor deposition.Through each film even compact that vapour deposition process obtains, capacitive property is high.
Semi-finished product A, semi-finished product B, semi-finished product C are heat-treated respectively, and heat treated temperature is 700～800 ℃, and the processing time is 25～35 minutes.As required metal film electrode
, dielectric film and metal film electrode
are heat-treated; Eliminate film defects, improve device performance.
Tantalum pentoxide and aluminium oxide have very high dielectric constant (tantalum pentoxide is 27, and aluminium oxide is 39.9, and plastic film is about 3), fusing point high (tantalum pentoxide is about 1800 ℃), stable chemical performance, corrosion-resistant and Heat stability is good.Be dielectric film capacitor CV density big (be under the same voltage conditions, the capacitance of unit volume is big) with tantalum pentoxide or aluminium oxide etc., (ESR) is little for equivalent series resistance, and leakage current is little.The metal film electrode of deposition has the self-recovery performance, and the reliability of opposing insulation breakdown is higher, can under extraordinary conditions such as high temperature or low temperature, use, and has long-term stability.This thin-film capacitor can be applied in numerous high-tech areas such as electronics, space flight, military affairs.
Owing to adopted above-mentioned technical scheme; Compared with prior art, the present invention adopts tantalum pentoxide etc. both to insulate, and has film that the material of good chemical stability processes again as dielectric; It is low to solve the dielectric dielectric constant of general film capacitor; Problems such as heat-resisting poor, film forming is poor, and mechanical strength is low.And through masking process, deposition double layer of metal film has greatly reduced metal consumption as upper/lower electrode, has reduced production cost, and manufacture craft is simple.Select for use metals such as tantalum, niobium, copper, silver or their alloys as metal film electrode, their resistivity is very low, but and high temperature high voltage resistant, have advantages of higher stability, can adapt to various complicated.In addition, utilize preparation method of the present invention can carry out industrialization production, have important practical significance.Method of the present invention is simple, easy realization of industrialization production, and the cost of making is comparatively cheap, and resulting product has better physical performance and chemical stability, long service life, cost of manufacture is lower, is with a wide range of applications.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the vertical view of Fig. 1;
Description of reference numerals:
1-metal film electrode
; The 2-dielectric film; 3-metal film electrode
; The 4-insulated substrate; 5-passivation protection film; 6-exit
; 7-exit
.
Embodiment
Embodiments of the invention 1: the structure of metallic film electric capacity is as shown in Figure 1, comprises aluminium oxide (Al
2O
3) insulated substrate 4 processed, be provided with the band exit at the top of insulated substrate 4
7 metal film electrode
1, metal film electrode
1 thickness is 0.2 μ m, and material is a tantalum, at exit
The metal film electrode that 6 interfaces are outer
1 surface is provided with the dielectric film 2 that thickness is 0.05 μ m, and its material is a tantalum pentoxide; Be provided with the band exit at the top of dielectric film 2
7 metal film electrode
3, metal film electrode
3 thickness is 0.2 μ m, and material is a niobium; At exit
6 and exit
All being provided with the silicon nitride on the surface beyond 7 is the passivation protection film 5 of material.
The preparation method of metallic film electric capacity is at the aluminium oxide (Al of cleaning
2O
3) lay one deck mask on the insulated substrate, adopt magnetron sputtering method, be material with the tantalum, deposit the thick metal film electrode of more than one 0.20 μ m
, obtain semi-finished product A; A heat-treats with semi-finished product, and heat treated temperature is 750 ℃, and the processing time is 30 minutes; Laying mask handling on the semi-finished product A, and adopted magnetron sputtering method, is material with the tantalum pentoxide, and depositing thickness is the matter film of 0.05 μ m, obtains semi-finished product B; B heat-treats with semi-finished product, and heat treated temperature is 750 ℃, and the processing time is 30 minutes; On the semi-finished product B that handled, laying mask, adopt magnetron sputtering method, is material with the niobium, and depositing thickness is 0.20 μ m metal film electrode
, and at metal film electrode
,
On reserve exit respectively
And exit
, obtain semi-finished product C; C heat-treats with semi-finished product, and heat treated temperature is 750 ℃, and the processing time is 30 minutes; Adopt magnetron sputtering method; With the silicon nitride is material; Deposit the passivation protection film on the semi-finished product C surface beyond the exit, after the semi-finished product C that will deposit the passivation protection film again cuts, obtain the single metal thin-film capacitor; And with coated with graphite back spray silver slurry extraction electrode on exit, packing obtains finished product after handling again.
Embodiment 2 of the present invention: a metal film capacitors, including aluminum nitride insulating substrate 4, the top of the insulating substrate 4 has a leading end with
6 metal film electrodes
1, the metal film electrodes
1 has a thickness of 0.1μm, material is aluminum, the terminals
6 interfaces of the metal film electrodes
1 has a thickness of 0.04μm on the surface of the dielectric film 2, the material is tantalum pentoxide; the top of the dielectric film 2 has a leading end with
7 metal film electrode
3, the metal film electrodes
3 has a thickness of 0.1μm, material for the silver; at terminals
6 and terminations
7 outside surface has a silica-based material passivation film 9.
The preparation method of metallic film electric capacity; On the aluminium nitride insulated substrate of cleaning, lay one deck mask; Adopt magnetron sputtering method; With aluminium is material, deposits the thick metal film electrode of more than one 0.10 μ m
, obtains semi-finished product A; A heat-treats with semi-finished product, and heat treated temperature is 700 ℃, and the processing time is 35 minutes; Laying mask handling on the semi-finished product A, and adopted magnetron sputtering method, is material with the tantalum pentoxide, and depositing thickness is the matter film of 0.04 μ m, obtains semi-finished product B; B heat-treats with semi-finished product, and heat treated temperature is 700 ℃, and the processing time is 35 minutes; On the semi-finished product B that handled, lay mask; Adopt magnetron sputtering method; With silver is material; Depositing thickness is 0.10 μ m metal film electrode
; And on metal film electrode
,
, reserve exit
and exit
respectively, obtain semi-finished product C; C heat-treats with semi-finished product, and heat treated temperature is 700 ℃, and the processing time is 35 minutes; Adopt the PECVD method; On the semi-finished product C surface beyond the exit, deposit silicon dioxide passivation protection film; After the semi-finished product C that will deposit the passivation protection film again cuts, obtain the single metal thin-film capacitor, and to the exit metal spraying; Through the wave-soldering extraction electrode, packing obtains finished product after handling again on gilding layer.
The preparation method of metallic film electric capacity; On the ceramic substrate insulated substrate of cleaning, lay one deck mask; Adopt magnetron sputtering method; With the albronze is material, deposits the thick metal film electrode of more than one 0.30 μ m
, obtains semi-finished product A; A heat-treats with semi-finished product, and heat treated temperature is 800 ℃, and the processing time is 25 minutes; Laying mask handling on the semi-finished product A, and adopted magnetron sputtering method, is material with the aluminium oxide, and depositing thickness is the matter film of 0.06 μ m, obtains semi-finished product B; B heat-treats with semi-finished product, and heat treated temperature is 800 ℃, and the processing time is 25 minutes; On the semi-finished product B that handled, lay mask; Adopt magnetron sputtering; With the copper niobium alloy is material; Depositing thickness is 0.30 μ m metal film electrode
; And on metal film electrode
,
, reserve exit
and exit
respectively, obtain semi-finished product C; C heat-treats with semi-finished product, and heat treated temperature is 800 ℃, and the processing time is 25 minutes; Adopt the PECVD method; With the silicon nitride is material; Deposit the passivation protection film on the semi-finished product C surface beyond the exit, after the semi-finished product C that will deposit the passivation protection film again cuts, obtain the single metal thin-film capacitor; And with coated with graphite back spray silver slurry extraction electrode on exit, packing obtains finished product after handling again.
Claims (8)
1. metallic film electric capacity; Comprise insulated substrate (4); It is characterized in that: the metal film electrode
(1) that is provided with band exit
(6) at the top of insulated substrate (4); Be provided with dielectric film (2) on metal film electrode
(1) surface outside exit
(6) interface, be provided with the metal film electrode
(3) of band exit
(7) at the top of dielectric film (2).
2. metallic film electric capacity according to claim 1; It is characterized in that: on exit
(6) and exit
(7) surface in addition, all be provided with passivation protection film (5), its material is silicon dioxide or silicon nitride.
3. metallic film electric capacity according to claim 1; It is characterized in that: the thickness of metal film electrode
(1) and metal film electrode
(3) is respectively 0.1～0.3 μ m, and their material is one or more the alloy in tantalum, niobium, aluminium, copper, the silver.
4. metallic film electric capacity according to claim 1 is characterized in that: the thickness of dielectric film (2) is 0.04～0.06 μ m, and its material is tantalum pentoxide or aluminium oxide.
5. the preparation method of a metallic film electric capacity; It is characterized in that: adopt mask technique; Deposition more than one metal film electrode
obtains semi-finished product A on insulated substrate; On semi-finished product A, adopt mask technique to deposit dielectric film, obtain semi-finished product B; On semi-finished product B, adopt mask technique to deposit metal film electrode
; And on metal film electrode
and metal film electrode
, reserve exit
and exit
respectively, obtain semi-finished product C; After semi-finished product C cut, obtain the single metal thin-film capacitor, and draw capacitance electrode from exit, packing obtains finished product after handling again.
6. the preparation method of metallic film electric capacity according to claim 5 is characterized in that: on the semi-finished product C surface beyond the exit, deposit the passivation protection film.
7. the preparation method of metallic film electric capacity according to claim 5 is characterized in that: the depositional mode of metal film electrode
, dielectric film and metal film electrode
is physics or chemical vapour deposition technique.
8. the preparation method of metallic film electric capacity according to claim 5 is characterized in that: semi-finished product A, semi-finished product B, semi-finished product C are heat-treated respectively, and heat treated temperature is 700～800 ℃, and the processing time is 25～35 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102240684A CN102385985A (en) | 2011-08-05 | 2011-08-05 | Metal thin film capacitor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102240684A CN102385985A (en) | 2011-08-05 | 2011-08-05 | Metal thin film capacitor and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102385985A true CN102385985A (en) | 2012-03-21 |
Family
ID=45825305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102240684A Pending CN102385985A (en) | 2011-08-05 | 2011-08-05 | Metal thin film capacitor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102385985A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165286A (en) * | 2013-03-01 | 2013-06-19 | 溧阳华晶电子材料有限公司 | Thin film capacitor |
| CN103513113A (en) * | 2012-06-28 | 2014-01-15 | 联想(北京)有限公司 | Information acquisition method, equipment and capacitor |
| CN111834341A (en) * | 2020-06-17 | 2020-10-27 | 珠海越亚半导体股份有限公司 | Capacitor and inductor embedded structure and its manufacturing method and substrate |
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| CN202332579U (en) * | 2011-08-05 | 2012-07-11 | 贵州大学 | Metallic film capacitor |
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2011
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|---|---|---|---|---|
| US3679942A (en) * | 1971-02-09 | 1972-07-25 | Rca Corp | Metal-oxide-metal, thin-film capacitors and method of making same |
| JPS52142257A (en) * | 1976-05-21 | 1977-11-28 | Hitachi Ltd | Thick film capacitor |
| US5159524A (en) * | 1989-08-16 | 1992-10-27 | Matsushita Electric Industrial Co., Ltd. | Laser trimable capacitor |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103513113A (en) * | 2012-06-28 | 2014-01-15 | 联想(北京)有限公司 | Information acquisition method, equipment and capacitor |
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| CN111834341A (en) * | 2020-06-17 | 2020-10-27 | 珠海越亚半导体股份有限公司 | Capacitor and inductor embedded structure and its manufacturing method and substrate |
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Application publication date: 20120321 |