CN102385985A - Metal thin film capacitor and preparation method thereof - Google Patents

Metal thin film capacitor and preparation method thereof Download PDF

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Publication number
CN102385985A
CN102385985A CN2011102240684A CN201110224068A CN102385985A CN 102385985 A CN102385985 A CN 102385985A CN 2011102240684 A CN2011102240684 A CN 2011102240684A CN 201110224068 A CN201110224068 A CN 201110224068A CN 102385985 A CN102385985 A CN 102385985A
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finished product
semi
electrode
metal film
thin film
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邓朝勇
马亚林
石健
崔瑞瑞
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Guizhou University
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Guizhou University
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Abstract

The invention discloses a metal thin film capacitor, which comprises an insulating substrate, wherein the top of the insulating substrate is provided with a metal thin film electrode I with a lead-out end I; the surface of the metal thin film electrode I outside a port of the lead-out end I is provided with a dielectric thin film; and the top of the dielectric thin film is provided with a metal thin film electrode II with a lead-out end II. In the invention, a thin film which is prepared from the materials of tantalum pentoxide and the like with insulation and good chemical stability is used as a dielectric, so that the problems of low dielectric constant, poor heat insulation, poor filming property, low mechanical strength and the like of the dielectric of the normal thin film capacitor are solved. Two layers of metal films are deposited to serve as a top electrode and a bottom electrode through a mask technology, so that the amount of used metal is greatly reduced, the production cost is lowered, and the manufacturing technology is simple. Metals of tantalum, niobium, copper, silver and the like or alloys thereof are selected as the metal thin film electrodes, the resistivity of the metals or the alloys is extremely low, and the metals or the alloys can resist against high temperature and high pressure, so that the metal thin film capacitor has higher stability and can adapt to various complex environments.

Description

Metallic film electric capacity and preparation method thereof
Technical field
The present invention relates to a kind of electric capacity and preparation method thereof, especially a kind of metallic film electric capacity and preparation method thereof.
Background technology
The thin-film capacitor range of capacity is wide, and operating voltage range is extremely wide, good temp characteristic, and stability is high, can realize metallization, has self-healing property, is widely used in a plurality of industries such as electronics, space flight, communication, military affairs.Along with China's digitlization, informationization, networked construction process are constantly accelerated; And the development of very lagre scale integrated circuit (VLSIC); Require electronic component miniaturization, filmization and multifunction, this makes conventional plastic film and silicon dioxide reach certain limit as main capacitor dielectric material.Problems such as present electric capacity exists the dielectric constant of medium low, and heat-resisting poor, film forming is poor, and mechanical strength is low.
Summary of the invention
The objective of the invention is: a kind of metallic film electric capacity and preparation method thereof is provided, and its each item performance is outstanding, with low cost, is easy to industrialization, to overcome the deficiency of prior art.
The present invention is achieved in that metallic film electric capacity; Comprise insulated substrate; Be provided with the metal film electrode of band exit
Figure 880408DEST_PATH_IMAGE002
at the top of insulated substrate; Be provided with dielectric film on metal film electrode
Figure 878692DEST_PATH_IMAGE002
surface outside exit
Figure 801014DEST_PATH_IMAGE002
interface, be provided with the metal film electrode
Figure 52184DEST_PATH_IMAGE003
of band exit
Figure 2011102240684100002DEST_PATH_IMAGE003
at the top of dielectric film.
On exit and exit
Figure 499663DEST_PATH_IMAGE003
surface in addition, all be provided with the passivation protection film, its material is silicon dioxide or silicon nitride.Material requirements as the passivation protection film has good insulation performance and temperature stability.
The thickness of metal film electrode and metal film electrode is respectively 0.1～0.3 μ m, and their material is one or more the alloy in tantalum, niobium, aluminium, copper, the silver.It is very low that these metals and their alloy have resistivity, but high temperature high voltage resistant has high stability, can adapt to characteristics such as various complicated.
The thickness of dielectric film is 0.04～0.06 μ m, and its material is tantalum pentoxide or aluminium oxide.Their dielectric constant is high, good heat resistance, and good film-forming property, mechanical strength is high, and the insulating properties energy consumption of the dielectric film for preparing can prevent capacitance short-circuit, reduces leakage current.
The preparation method of metallic film electric capacity; Adopt mask technique; Deposition more than one metal film electrode
Figure 641428DEST_PATH_IMAGE002
obtains semi-finished product A on insulated substrate; On semi-finished product A, adopt mask technique to deposit dielectric film, obtain semi-finished product B; On semi-finished product B, adopt mask technique to deposit metal film electrode
Figure 249127DEST_PATH_IMAGE003
; And on metal film electrode
Figure 832555DEST_PATH_IMAGE002
and metal film electrode
Figure 551113DEST_PATH_IMAGE003
, reserve exit
Figure 536386DEST_PATH_IMAGE002
and exit
Figure 846145DEST_PATH_IMAGE003
respectively, obtain semi-finished product C; After semi-finished product C cut, obtain the single metal thin-film capacitor, and draw capacitance electrode from exit, packing obtains finished product after handling again.
On the semi-finished product C surface beyond the exit, deposit the passivation protection film.
Metal film electrodes
Figure 385711DEST_PATH_IMAGE002
, dielectric film and metal film electrodes
Figure 439117DEST_PATH_IMAGE003
deposition method is a physical or chemical vapor deposition.Through each film even compact that vapour deposition process obtains, capacitive property is high.
Semi-finished product A, semi-finished product B, semi-finished product C are heat-treated respectively, and heat treated temperature is 700～800 ℃, and the processing time is 25～35 minutes.As required metal film electrode , dielectric film and metal film electrode
Figure 228399DEST_PATH_IMAGE003
are heat-treated; Eliminate film defects, improve device performance.
Tantalum pentoxide and aluminium oxide have very high dielectric constant (tantalum pentoxide is 27, and aluminium oxide is 39.9, and plastic film is about 3), fusing point high (tantalum pentoxide is about 1800 ℃), stable chemical performance, corrosion-resistant and Heat stability is good.Be dielectric film capacitor CV density big (be under the same voltage conditions, the capacitance of unit volume is big) with tantalum pentoxide or aluminium oxide etc., (ESR) is little for equivalent series resistance, and leakage current is little.The metal film electrode of deposition has the self-recovery performance, and the reliability of opposing insulation breakdown is higher, can under extraordinary conditions such as high temperature or low temperature, use, and has long-term stability.This thin-film capacitor can be applied in numerous high-tech areas such as electronics, space flight, military affairs.
Owing to adopted above-mentioned technical scheme; Compared with prior art, the present invention adopts tantalum pentoxide etc. both to insulate, and has film that the material of good chemical stability processes again as dielectric; It is low to solve the dielectric dielectric constant of general film capacitor; Problems such as heat-resisting poor, film forming is poor, and mechanical strength is low.And through masking process, deposition double layer of metal film has greatly reduced metal consumption as upper/lower electrode, has reduced production cost, and manufacture craft is simple.Select for use metals such as tantalum, niobium, copper, silver or their alloys as metal film electrode, their resistivity is very low, but and high temperature high voltage resistant, have advantages of higher stability, can adapt to various complicated.In addition, utilize preparation method of the present invention can carry out industrialization production, have important practical significance.Method of the present invention is simple, easy realization of industrialization production, and the cost of making is comparatively cheap, and resulting product has better physical performance and chemical stability, long service life, cost of manufacture is lower, is with a wide range of applications.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the vertical view of Fig. 1;
Description of reference numerals:
1-metal film electrode
Figure 520840DEST_PATH_IMAGE002
; The 2-dielectric film; 3-metal film electrode
Figure 345314DEST_PATH_IMAGE003
; The 4-insulated substrate; 5-passivation protection film; 6-exit
Figure 39601DEST_PATH_IMAGE002
; 7-exit .
Embodiment
Embodiments of the invention 1: the structure of metallic film electric capacity is as shown in Figure 1, comprises aluminium oxide (Al 2O 3) insulated substrate 4 processed, be provided with the band exit at the top of insulated substrate 4
Figure 205320DEST_PATH_IMAGE002
7 metal film electrode
Figure 600529DEST_PATH_IMAGE002
1, metal film electrode
Figure 618164DEST_PATH_IMAGE002
1 thickness is 0.2 μ m, and material is a tantalum, at exit
Figure 706205DEST_PATH_IMAGE002
The metal film electrode that 6 interfaces are outer
Figure 442080DEST_PATH_IMAGE002
1 surface is provided with the dielectric film 2 that thickness is 0.05 μ m, and its material is a tantalum pentoxide; Be provided with the band exit at the top of dielectric film 2
Figure 375401DEST_PATH_IMAGE003
7 metal film electrode 3, metal film electrode
Figure 772064DEST_PATH_IMAGE003
3 thickness is 0.2 μ m, and material is a niobium; At exit
Figure 260814DEST_PATH_IMAGE002
6 and exit All being provided with the silicon nitride on the surface beyond 7 is the passivation protection film 5 of material.
The preparation method of metallic film electric capacity is at the aluminium oxide (Al of cleaning 2O 3) lay one deck mask on the insulated substrate, adopt magnetron sputtering method, be material with the tantalum, deposit the thick metal film electrode of more than one 0.20 μ m
Figure 255632DEST_PATH_IMAGE002
, obtain semi-finished product A; A heat-treats with semi-finished product, and heat treated temperature is 750 ℃, and the processing time is 30 minutes; Laying mask handling on the semi-finished product A, and adopted magnetron sputtering method, is material with the tantalum pentoxide, and depositing thickness is the matter film of 0.05 μ m, obtains semi-finished product B; B heat-treats with semi-finished product, and heat treated temperature is 750 ℃, and the processing time is 30 minutes; On the semi-finished product B that handled, laying mask, adopt magnetron sputtering method, is material with the niobium, and depositing thickness is 0.20 μ m metal film electrode
Figure 888739DEST_PATH_IMAGE003
, and at metal film electrode
Figure 130364DEST_PATH_IMAGE002
,
Figure 671067DEST_PATH_IMAGE003
On reserve exit respectively
Figure 517801DEST_PATH_IMAGE002
And exit
Figure 118546DEST_PATH_IMAGE003
, obtain semi-finished product C; C heat-treats with semi-finished product, and heat treated temperature is 750 ℃, and the processing time is 30 minutes; Adopt magnetron sputtering method; With the silicon nitride is material; Deposit the passivation protection film on the semi-finished product C surface beyond the exit, after the semi-finished product C that will deposit the passivation protection film again cuts, obtain the single metal thin-film capacitor; And with coated with graphite back spray silver slurry extraction electrode on exit, packing obtains finished product after handling again.
Embodiment 2 of the present invention: a metal film capacitors, including aluminum nitride insulating substrate 4, the top of the insulating substrate 4 has a leading end with
Figure 560984DEST_PATH_IMAGE004
6 metal film electrodes
Figure 374219DEST_PATH_IMAGE004
1, the metal film electrodes
Figure 872197DEST_PATH_IMAGE004
1 has a thickness of 0.1μm, material is aluminum, the terminals
Figure 378264DEST_PATH_IMAGE004
6 interfaces of the metal film electrodes
Figure 63324DEST_PATH_IMAGE002
1 has a thickness of 0.04μm on the surface of the dielectric film 2, the material is tantalum pentoxide; the top of the dielectric film 2 has a leading end with
Figure 945829DEST_PATH_IMAGE003
7 metal film electrode
Figure 767154DEST_PATH_IMAGE003
3, the metal film electrodes
Figure 444123DEST_PATH_IMAGE003
3 has a thickness of 0.1μm, material for the silver; at terminals 6 and terminations 7 outside surface has a silica-based material passivation film 9.
The preparation method of metallic film electric capacity; On the aluminium nitride insulated substrate of cleaning, lay one deck mask; Adopt magnetron sputtering method; With aluminium is material, deposits the thick metal film electrode of more than one 0.10 μ m
Figure 181769DEST_PATH_IMAGE002
, obtains semi-finished product A; A heat-treats with semi-finished product, and heat treated temperature is 700 ℃, and the processing time is 35 minutes; Laying mask handling on the semi-finished product A, and adopted magnetron sputtering method, is material with the tantalum pentoxide, and depositing thickness is the matter film of 0.04 μ m, obtains semi-finished product B; B heat-treats with semi-finished product, and heat treated temperature is 700 ℃, and the processing time is 35 minutes; On the semi-finished product B that handled, lay mask; Adopt magnetron sputtering method; With silver is material; Depositing thickness is 0.10 μ m metal film electrode
Figure 295219DEST_PATH_IMAGE003
; And on metal film electrode
Figure 220450DEST_PATH_IMAGE002
,
Figure 913599DEST_PATH_IMAGE003
, reserve exit
Figure 240675DEST_PATH_IMAGE002
and exit
Figure 492403DEST_PATH_IMAGE003
respectively, obtain semi-finished product C; C heat-treats with semi-finished product, and heat treated temperature is 700 ℃, and the processing time is 35 minutes; Adopt the PECVD method; On the semi-finished product C surface beyond the exit, deposit silicon dioxide passivation protection film; After the semi-finished product C that will deposit the passivation protection film again cuts, obtain the single metal thin-film capacitor, and to the exit metal spraying; Through the wave-soldering extraction electrode, packing obtains finished product after handling again on gilding layer.
Embodiment 3 of the present invention: a metal film capacitor, including a ceramic substrate made of an insulating substrate 4, the top of the insulating substrate 4 has a leading end with
Figure 639350DEST_PATH_IMAGE002
7 metal film electrodes
Figure 136191DEST_PATH_IMAGE002
1, the metal film electrodes
Figure 317773DEST_PATH_IMAGE002
1 has a thickness of 0.3μm, Material is copper alloy, in terminations
Figure 773025DEST_PATH_IMAGE002
6 interfaces of the metal film electrodes
Figure 141690DEST_PATH_IMAGE002
1 on the surface of a dielectric film thickness of 0.06μm 2, the material is alumina; dielectric film 2 in the top of a bathroom with terminations
Figure 707800DEST_PATH_IMAGE003
7 metal film electrode
Figure 212731DEST_PATH_IMAGE003
3, the metal film electrodes 3 has a thickness of 0.3μm, material is copper niobium alloys; at terminals
Figure 429266DEST_PATH_IMAGE002
6 and terminations
Figure 799067DEST_PATH_IMAGE003
7 on a surface other than have a silicon nitride passivation film as the material 5.
The preparation method of metallic film electric capacity; On the ceramic substrate insulated substrate of cleaning, lay one deck mask; Adopt magnetron sputtering method; With the albronze is material, deposits the thick metal film electrode of more than one 0.30 μ m
Figure 955242DEST_PATH_IMAGE002
, obtains semi-finished product A; A heat-treats with semi-finished product, and heat treated temperature is 800 ℃, and the processing time is 25 minutes; Laying mask handling on the semi-finished product A, and adopted magnetron sputtering method, is material with the aluminium oxide, and depositing thickness is the matter film of 0.06 μ m, obtains semi-finished product B; B heat-treats with semi-finished product, and heat treated temperature is 800 ℃, and the processing time is 25 minutes; On the semi-finished product B that handled, lay mask; Adopt magnetron sputtering; With the copper niobium alloy is material; Depositing thickness is 0.30 μ m metal film electrode
Figure 221138DEST_PATH_IMAGE003
; And on metal film electrode
Figure 829974DEST_PATH_IMAGE002
,
Figure 206729DEST_PATH_IMAGE003
, reserve exit
Figure 217410DEST_PATH_IMAGE002
and exit
Figure 185366DEST_PATH_IMAGE003
respectively, obtain semi-finished product C; C heat-treats with semi-finished product, and heat treated temperature is 800 ℃, and the processing time is 25 minutes; Adopt the PECVD method; With the silicon nitride is material; Deposit the passivation protection film on the semi-finished product C surface beyond the exit, after the semi-finished product C that will deposit the passivation protection film again cuts, obtain the single metal thin-film capacitor; And with coated with graphite back spray silver slurry extraction electrode on exit, packing obtains finished product after handling again.

Claims (8)

1. metallic film electric capacity; Comprise insulated substrate (4); It is characterized in that: the metal film electrode
Figure 550496DEST_PATH_IMAGE001
(1) that is provided with band exit
Figure 2011102240684100001DEST_PATH_IMAGE001
(6) at the top of insulated substrate (4); Be provided with dielectric film (2) on metal film electrode
Figure 974841DEST_PATH_IMAGE001
(1) surface outside exit
Figure 971113DEST_PATH_IMAGE001
(6) interface, be provided with the metal film electrode
Figure 154467DEST_PATH_IMAGE002
(3) of band exit
Figure 822711DEST_PATH_IMAGE002
(7) at the top of dielectric film (2).
2. metallic film electric capacity according to claim 1; It is characterized in that: on exit
Figure 378775DEST_PATH_IMAGE001
(6) and exit
Figure 705851DEST_PATH_IMAGE002
(7) surface in addition, all be provided with passivation protection film (5), its material is silicon dioxide or silicon nitride.
3. metallic film electric capacity according to claim 1; It is characterized in that: the thickness of metal film electrode
Figure 521360DEST_PATH_IMAGE001
(1) and metal film electrode
Figure 933887DEST_PATH_IMAGE002
(3) is respectively 0.1～0.3 μ m, and their material is one or more the alloy in tantalum, niobium, aluminium, copper, the silver.
4. metallic film electric capacity according to claim 1 is characterized in that: the thickness of dielectric film (2) is 0.04～0.06 μ m, and its material is tantalum pentoxide or aluminium oxide.
5. the preparation method of a metallic film electric capacity; It is characterized in that: adopt mask technique; Deposition more than one metal film electrode
Figure 696306DEST_PATH_IMAGE001
obtains semi-finished product A on insulated substrate; On semi-finished product A, adopt mask technique to deposit dielectric film, obtain semi-finished product B; On semi-finished product B, adopt mask technique to deposit metal film electrode
Figure 284414DEST_PATH_IMAGE002
; And on metal film electrode and metal film electrode
Figure 170647DEST_PATH_IMAGE002
, reserve exit
Figure 736758DEST_PATH_IMAGE001
and exit
Figure 772847DEST_PATH_IMAGE002
respectively, obtain semi-finished product C; After semi-finished product C cut, obtain the single metal thin-film capacitor, and draw capacitance electrode from exit, packing obtains finished product after handling again.
6. the preparation method of metallic film electric capacity according to claim 5 is characterized in that: on the semi-finished product C surface beyond the exit, deposit the passivation protection film.
7. the preparation method of metallic film electric capacity according to claim 5 is characterized in that: the depositional mode of metal film electrode
Figure 805525DEST_PATH_IMAGE001
, dielectric film and metal film electrode is physics or chemical vapour deposition technique.
8. the preparation method of metallic film electric capacity according to claim 5 is characterized in that: semi-finished product A, semi-finished product B, semi-finished product C are heat-treated respectively, and heat treated temperature is 700～800 ℃, and the processing time is 25～35 minutes.
CN2011102240684A 2011-08-05 2011-08-05 Metal thin film capacitor and preparation method thereof Pending CN102385985A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103165286A (en) * 2013-03-01 2013-06-19 溧阳华晶电子材料有限公司 Thin film capacitor
CN103513113A (en) * 2012-06-28 2014-01-15 联想(北京)有限公司 Information acquisition method, equipment and capacitor
CN111834341A (en) * 2020-06-17 2020-10-27 珠海越亚半导体股份有限公司 Capacitor and inductor embedded structure and manufacturing method thereof and substrate

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JPS52142257A (en) * 1976-05-21 1977-11-28 Hitachi Ltd Thick film capacitor
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CN1461296A (en) * 2000-07-24 2003-12-10 松下电器产业株式会社 Bis (4-mercaptophenyl) sulfide derivatives, process for preparation thereof and electronic components
CN101233590A (en) * 2005-07-29 2008-07-30 Tdk株式会社 Process for producing thin-film capacitor
CN202332579U (en) * 2011-08-05 2012-07-11 贵州大学 Metallic film capacitor

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JPS52142257A (en) * 1976-05-21 1977-11-28 Hitachi Ltd Thick film capacitor
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JPH06325968A (en) * 1993-05-11 1994-11-25 Shimada Phys & Chem Ind Co Ltd Thin film electric element
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103513113A (en) * 2012-06-28 2014-01-15 联想(北京)有限公司 Information acquisition method, equipment and capacitor
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CN111834341A (en) * 2020-06-17 2020-10-27 珠海越亚半导体股份有限公司 Capacitor and inductor embedded structure and manufacturing method thereof and substrate

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Application publication date: 20120321