CN1581370A - Method for manufacturing film resistance - Google Patents
Method for manufacturing film resistance Download PDFInfo
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- CN1581370A CN1581370A CN 03150059 CN03150059A CN1581370A CN 1581370 A CN1581370 A CN 1581370A CN 03150059 CN03150059 CN 03150059 CN 03150059 A CN03150059 A CN 03150059A CN 1581370 A CN1581370 A CN 1581370A
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- film
- manufacture method
- film resistor
- resistive film
- protective layer
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Abstract
First protection layer as a mask for etching resistance film further in order to form a patterned resistance film is formed on a resistance film through printing technique. The first protection layer can be utilized to protect resistance film, and does not need to be removed in following procedures. Thus, the invention simplifies fabricating flow and raises fineness rate of film resistor.
Description
Technical field
The present invention relates to a kind of manufacture method of film resistor, particularly relate to the protective layer that a kind of utilization need not remove and be used as cover curtain (Mask) manufacture method with the film resistor of definition resistive film pattern.
Background technology
Resistance can be divided into coil resistance, non-coil resistance two big classes, but not coil resistance (Chip-R) is because of its size is little, in light weight, cost is low, three number scopes are big, and applicability is wide, is the maximum a kind of resistive element of industry output and use amount at present therefore.Chip-R can be divided into two kinds of film resistor and thick-film resistors according to manufacture method.
Disclose as No. 86113162 patent case in Taiwan, the resistive film of thick-film resistor is to utilize screen frame to be printed on the ceramic substrate, forms via processing procedures such as drying, high temperature (as 900 ℃) sintering again.More than about 5 to the 10 μ m of resistance thickness and the resistive paste of its material for mixing by glass and conducting particles.
Yet because the resistive film of thick-film resistor forms with mode of printing, the thickness of resistive film is uneven easily, and because of the variation influence of resistive paste diffusion with sintering temperature, causes the resistance change of thick-film resistor bigger.Especially in case when being applied to high frequency environment, because of the resistive film porosity height of thick-film resistor, loosely organized, cause high-frequency signals loss (lost) bigger, so and be not suitable for high-frequency range.
The resistive film of film resistor is physical gas phase deposition technology (the Physical Vapor Deposition such as sputter (Sputter Deposition) or evaporation (Evaporation) that adopts, PVD) or chemical vapour deposition technique (Chemical Vapor Deposition CVD) waits manufacture of semiconductor to generate.Because these manufacture of semiconductor have the plated film characteristic of regioselectivity unlike screen painting, required pattern need form via light lithography etching (Photo Lithography) technology afterwards usually.Specifically; on the resistive film of film resistor, cover photoresistance; and the collocation light shield exposes, develops; with the pattern of definition resistive film and with the photoresistance that develops as shade; so that the resistive film under the photoresistance is carried out selective etch; the part that is not covered by photoresistance and protect is removed with chemical reaction or physical action, to shift mask pattern on resistive film.At last, photoresistance by divesting (Strip) on the resistive film, is formed protective layer, end electrode constitutes film resistor more in regular turn.
Compared to the thick-film resistor processing procedure that needs high temperature sintering, how controlled the film resistor processing procedure is is formed on below 400 ℃ the temperature, and its film composition is easy to control, the stable uniformity with thickness of temperature coefficient of resistance (TCR) can be controlled in below 5%.In addition, aspect frequency applications, the resistive film of film resistor can plate out high-purity and fine and close resistive film according to the selection of target, causes high-frequency loss very to be lower than thick-film resistor, and is fit to be applied to high-frequency range.
Because the pattern of film resistor is to utilize little shadow to form, and need peel off photoresistance and just can carry out subsequent treatment.Yet when removing photoresistance, may take place to remove not exclusively, remove excessive and remove the part resistive film accidentally, and after removing the photoresistance film, resistive film is exposed to the normal temperature indoor environment and taken place by dust pollution or the oxidized situation of part, therefore the electrical characteristic of film resistor may change, even cause the generation of defective products.
Therefore, if can utilize other modes to replace the pattern that photoresistance defines film resistor, remove the shortcoming that to bring when peeling off photoresistance when economizing, and then can reach the effect that improves the film resistor yield.
Summary of the invention
The objective of the invention is to be to provide a kind of manufacture method of film resistor, utilize first protective layer that need not remove to be used as the cover curtain, improve yield and the effect of simplifying manufacturing process to reach with definition resistive film pattern.
The manufacture method of film resistor of the present invention is characterized in that may further comprise the steps:
Steps A) forms two main electrodes that lay respectively at these insulated substrate two ends at the upper surface of an insulated substrate;
Step B) forms the upper surface of a resistive film in the thin film deposition mode in the aforementioned dielectric substrate;
Step C) form one first protective layer with mode of printing on aforesaid resistive film, this first protective layer is that shade is positioned at the resistive film between these main electrodes and the distolateral part resistive film of vicinity that is positioned on these main electrodes is exposed at least;
Step D) with this first protective layer as cover curtain, remove the resistive film of this exposed part; And
Step e) forms the both ends of the surface electrode and also cover this corresponding main electrode respectively in the both ends of the insulated substrate of abovementioned steps.
Advantage of the present invention is, the photoresistance that the utilization of different film resistor in the past need remove is used as the cover curtain, the present invention utilize the tool regioselectivity and first protective layer that need not remove as the cover curtain and the etching resistive film.Not only, omission simplifies manufacturing process because of removing the photoresistance step, and because of omitting this removing photoresistance step, exempt photoresistance removes excessive or removes not the harmful effect that full the resistive film characteristic is produced thereupon, the more lasting resistive film that makes is with extraneous isolated, guarantee that it is not oxidized, make resistive film characteristic of the present invention comparatively stable, and then can reach the effect that improves yield.
The present invention is described in detail below in conjunction with the drawings and the specific embodiments:
Description of drawings
Fig. 1 is the flow chart of the manufacture method preferred embodiment of film resistor of the present invention;
Fig. 2 forms electrode in the processing procedure cross-sectional schematic on insulated substrate surface among Fig. 1 embodiment;
Fig. 3 forms the processing procedure cross-sectional schematic of resistive film on insulated substrate among Fig. 1 embodiment;
Fig. 4 forms the processing procedure cross-sectional schematic of first protective layer on resistive film among Fig. 1 embodiment;
Fig. 5 is the processing procedure cross-sectional schematic of etching resistive film among Fig. 1 embodiment;
Fig. 6 is the processing procedure cross-sectional schematic of resistance value finishing among Fig. 1 embodiment;
Fig. 7 is the schematic top plan view of the resistance value finishing processing procedure of Fig. 6;
Fig. 8 is the processing procedure cross-sectional schematic that forms second protective layer among Fig. 1 embodiment; And
Fig. 9 is the processing procedure cross-sectional schematic that forms end electrode among Fig. 1 embodiment.
Embodiment
For convenience of description, select to illustrate among the embodiment hereinafter, yet have the knack of this skill person, can on large-scale insulated substrate, form most the film resistors that are arranged during actual the manufacturing when knowing with single film resistor.
Consult Fig. 1, the manufacturing process of the manufacture method preferred embodiment of film resistor of the present invention.For allowing the easier quilt of present embodiment understand, hereinafter cooperate Fig. 2～Fig. 9 that the manufacturing process of present embodiment is described in the lump.
At first, step 11 is to form electrode in the surface of an insulated substrate 2.As Fig. 2, form two main electrodes 31 respectively at the two ends of insulated substrate 2 upper surfaces 21.In addition, this example more can form two lower electrodes 32 in lower surface 22 two ends of insulated substrate 2, and (Surface Mount Technology, SMT) mode is engaged on the printed circuit board (PCB) (PCB) for using surface mounting technology.In the present embodiment, insulated substrate 2 is aluminium oxide (Al
2O
3) ceramic insulation substrate, main electrode 31 utilizes the screen painting mode to form with lower electrodes 32, and is that conduction paste glue (conductor paste) sintering forms, for example elargol.
Secondly in step 12,, utilize thin film deposition to form a resistive film 4 in the upper surface 21 of insulated substrate 2 as Fig. 3.Because thin film deposition does not have regioselective characteristic, thereby resistive film 4 is covered on the exposed part and two main electrodes 31 of insulated substrate 2 upper surfaces 21.This routine resistive film 4 can utilize sputter (Sputter Deposition) to form and be titanium-tungsten (TiW) and the formed plural layers of manganin (MnCu).Yet, have the knack of this skill person when knowing, resistive film 4 also can utilize other kinds physical gas phase deposition technology (PVD) or the chemical vapour deposition technique (CVD) such as evaporation (Evaporation) to form, and the material of resistive film 4 can be a kind of of titanium-tungsten and manganin only, perhaps the resistance material of other kinds should not be subject to the explanation of present embodiment.
In step 13,, utilize screen printing on the resistive film 4 of the specific region that desire keeps subsequently, form first protective layer 51 as Fig. 4.First protective layer 51 of this example is formed on the resistive film 4 of inside part on 31 of two main electrodes and two main electrodes 31 (promptly and be positioned at the part that the resistive film 4 of 31 of two main electrodes joins), and its material is epoxy resin (Epoxy).Compared to photoresistance need be through the lengthy and tedious step of exposure, development in the past; beginning can define the pattern of resistive film; in this example; because screen printing has regioselectivity; so first protective layer 51 is formed directly on the resistive film 4 of desire reservation; and allow the resistive film of desiring to remove 4 keep exposed, and can easily define the pattern of resistive film 4, make this case clearly simplify the loaded down with trivial details flow process of known techniques.
And then in step 14; as shown in Figure 5; with first protective layer 51 as cover curtain (Mask); utilize etching (Etching) to remove exposed part in the resistive film 4 (being the Outboard Sections that is positioned in the resistive film 4 on the main electrode 31); with the design transfer of first protective layer 51 to resistive film 4, form the pattern of resistive film 4.For instance, the titanium-tungsten in the resistive film 4 can utilize H under 23 ℃ ± 2 ℃ of temperature
2O
2Carry out etching,, can under 23 ℃ ± 2 ℃ of temperature, utilize FeCl as for the manganin in the resistive film 4
3+ HCl carries out etching.Form the pattern of resistive film 4 in step 14 after; the photoresistance of film resistor different from the past; first protective layer 51 need not remove; and then can prevent that resistive film 4 pollutions that produce because of removing photoresistance or oxidation, photoresistance from removing situations such as not removing resistive film 4 entirely, accidentally and taking place; the characteristic that makes resistive film 4 was compared to film resistor was more stable in the past, to reach the effect that improves yield.
Then cooperate Fig. 6 and Fig. 7, in step 15,, can carry out resistance value finishing (Trimmer) for allowing the resistance value of resistive film 4 standard that suits the requirements, promptly utilizing the equipment such as laser to come to form fine setting ditch 41 on resistive film 4, is the standard electric resistance with the semifixed resistor value.
Secondly, in step 16,, utilize second protective layer 52 of screen printing one coating, first protective layer 51 and resistive film 4, to protect first protective layer 51 and resistive film 4 as Fig. 8.The material of second protective layer 52 is an epoxy resin.
At last, in step 17,, utilize the plating mode such as barrel plating to form both ends of the surface electrode 6 in the both ends of insulated substrate 2 as Fig. 9.In the present embodiment, more the both end sides in insulated substrate 2 plates one deck end face conducting film 61 before electroplating upper surface electrode 6, then start from main electrode 31, end face conducting film 61 and the lower electrodes 32 and plate end electrode 6, to form the two horizontal U font electrodes that are folded in the both ends of insulated substrate 2.This routine end electrode 6 is multilayer alloys of electro-coppering in regular turn (Cu), nickel (Ni) and tin (Sn).
Claims (10)
1. the manufacture method of a film resistor is characterized in that may further comprise the steps:
Steps A) forms two main electrodes that lay respectively at these insulated substrate two ends at the upper surface of an insulated substrate;
Step B) with the thin film deposition mode form one in abovementioned steps the resistive film of insulated substrate upper surface;
Step C) form one first protective layer with mode of printing on the resistive film of abovementioned steps, this first protective layer is that shade is positioned at the resistive film between these main electrodes and the distolateral part resistive film of vicinity that is positioned on these main electrodes is exposed at least;
Step D) removes the resistive film of this exposed part as cover curtain with this first protective layer; And
Step e) forms the both ends of the surface electrode and also cover this corresponding main electrode respectively in the both ends of the insulated substrate of abovementioned steps.
2. the manufacture method of film resistor as claimed in claim 1 is characterized in that: the lower electrodes that this steps A) more lays respectively at these insulated substrate two ends in the lower surface formation of this insulated substrate.
3. the manufacture method of film resistor as claimed in claim 1, it is characterized in that: the manufacture method of this film resistor comprises that more one is positioned at step D) and E) between step F), be this resistive film of finishing, to adjust the resistance value of this film resistor.
4. the manufacture method of film resistor as claimed in claim 3 is characterized in that: this step F) be to repair this resistive film with thunder laser beam.
5. the manufacture method of film resistor as claimed in claim 3, it is characterized in that: the manufacture method of this film resistor comprises that more one is positioned at this step F) and step e) between step G), form second protective layer that coats this first protective layer.
6. the manufacture method of film resistor as claimed in claim 5 is characterized in that: this step G) be to form this second protective layer with mode of printing.
7. the manufacture method of film resistor as claimed in claim 5, it is characterized in that: the material of this second protective layer is an epoxy resin.
8. the manufacture method of film resistor as claimed in claim 1 is characterized in that: this step e) be to form the both ends of the surface electrode on this insulated substrate with plating mode.
9. the manufacture method of film resistor as claimed in claim 1 is characterized in that: this step D) be the exposed part that removes this resistive film with etching mode.
10. the manufacture method of film resistor as claimed in claim 1, it is characterized in that: the material of this first protective layer is an epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031500595A CN100382203C (en) | 2003-07-31 | 2003-07-31 | Method for manufacturing film resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031500595A CN100382203C (en) | 2003-07-31 | 2003-07-31 | Method for manufacturing film resistance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1581370A true CN1581370A (en) | 2005-02-16 |
| CN100382203C CN100382203C (en) | 2008-04-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031500595A Expired - Fee Related CN100382203C (en) | 2003-07-31 | 2003-07-31 | Method for manufacturing film resistance |
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| CN (1) | CN100382203C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102314978A (en) * | 2011-06-24 | 2012-01-11 | 贵州大学 | High-performance thin film resistor and preparation method thereof |
| CN102592764A (en) * | 2012-03-20 | 2012-07-18 | 哈尔滨工程大学 | Spoke type multi-unit thermistor and preparation method thereof |
| US8269742B2 (en) | 2008-05-19 | 2012-09-18 | Fujitsu Component Limited | Manufacturing method of coordinate position detecting device |
| US9256337B2 (en) | 2008-04-23 | 2016-02-09 | Fujitsu Component Limited | Coordinate detection apparatus |
| US9681536B1 (en) | 2016-08-28 | 2017-06-13 | Unimicron Technology Corp. | Package substrate and method for fabricating the same |
| CN108826065A (en) * | 2018-07-31 | 2018-11-16 | 江门黑氪光电科技有限公司 | A kind of manufacturing method using film resistance LED light strip |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI447746B (en) * | 2012-05-11 | 2014-08-01 | Ta I Technology Co Ltd | Method for manufacturing current sensing element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976944A (en) * | 1997-02-12 | 1999-11-02 | Harris Corporation | Integrated circuit with thin film resistors and a method for co-patterning thin film resistors with different compositions |
| US6117789A (en) * | 1999-04-02 | 2000-09-12 | United Microelectronics Corp. | Method of manufacturing thin film resistor layer |
-
2003
- 2003-07-31 CN CNB031500595A patent/CN100382203C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9256337B2 (en) | 2008-04-23 | 2016-02-09 | Fujitsu Component Limited | Coordinate detection apparatus |
| US9778809B2 (en) | 2008-04-23 | 2017-10-03 | Fujitsu Component Limited | Coordinate detection apparatus |
| US8269742B2 (en) | 2008-05-19 | 2012-09-18 | Fujitsu Component Limited | Manufacturing method of coordinate position detecting device |
| CN101587411B (en) * | 2008-05-19 | 2014-04-16 | 富士通电子零件有限公司 | Manufacturing method of coordinate position detecting device |
| CN102314978A (en) * | 2011-06-24 | 2012-01-11 | 贵州大学 | High-performance thin film resistor and preparation method thereof |
| CN102592764A (en) * | 2012-03-20 | 2012-07-18 | 哈尔滨工程大学 | Spoke type multi-unit thermistor and preparation method thereof |
| US9681536B1 (en) | 2016-08-28 | 2017-06-13 | Unimicron Technology Corp. | Package substrate and method for fabricating the same |
| CN108826065A (en) * | 2018-07-31 | 2018-11-16 | 江门黑氪光电科技有限公司 | A kind of manufacturing method using film resistance LED light strip |
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| Publication number | Publication date |
|---|---|
| CN100382203C (en) | 2008-04-16 |
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Granted publication date: 20080416 Termination date: 20120731 |