CN102709653A - 1w 10dB attenuating plate for aluminum oxide ceramic substrate - Google Patents
1w 10dB attenuating plate for aluminum oxide ceramic substrate Download PDFInfo
- Publication number
- CN102709653A CN102709653A CN2012102166943A CN201210216694A CN102709653A CN 102709653 A CN102709653 A CN 102709653A CN 2012102166943 A CN2012102166943 A CN 2012102166943A CN 201210216694 A CN201210216694 A CN 201210216694A CN 102709653 A CN102709653 A CN 102709653A
- Authority
- CN
- China
- Prior art keywords
- aluminum oxide
- attenuator
- attenuating
- ceramic substrate
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention discloses a 1w 10dB attenuating plate for an aluminum oxide ceramic substrate, comprising an aluminum oxide substrate in size of 2mm*3.5mm*0.635mm, wherein the back surface of the aluminum oxide substrate is printed with a back conductor layer while the front surface of the aluminum oxide substrate is printed with a lead and a membrane-shaped resistor, wherein the lead is connected with the membrane-shaped resistor so as to form a T-shaped attenuating circuit. Each performance index of the attenuating plate is sufficiently considered in design, so that the 1w 10dB attenuating plate has the advantages of small volume, good high-frequency characteristic, stable and reliable property and convenient installation, the attenuating plate is lead-free so as to be environmentally friendly, the resistance precision and the attenuating precision are high, thereby meeting the application requirements of the current 3G (third generation) networks and extending the series product line of the 1w fixed membrane-shaped resistor type attenuating plate.
Description
Technical field
The present invention relates to a kind of aluminium oxide ceramics attenuator, the attenuator of 1 watt of 10dB of particularly a kind of aluminium oxide ceramic substrate.
Background technology
The attenuator of at present integrated three membranaceous resistive arrangement is widely used in apparatus field such as Aeronautics and Astronautics, radar, radio station, broadcast communication.The working load sheet can only merely consume the power of absorbing redundant; Analyze and use attenuator can also extract the signal that needs simultaneously at the power that absorbs reverse input; And on high-frequency circuit, adjust power level, and decouple, relevant device has been played protective effect.
Since more Zao with manufacturing abroad than domestic starting to the research and development of like product, the status of on product line still is product performance, all having the advantage.Existing attenuator attenuation accuracy is low on the domestic market simultaneously, and employable frequency range relative narrower.The attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.When attenuation accuracy or VSWR do not reach when requiring, the signal that output obtains does not meet actual requirement.
Summary of the invention
Deficiency to above-mentioned prior art; The technical problem that the present invention will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 10 ± 0.8dB in the 3G frequency range with interior attenuation accuracy, and standing wave requires input, output in 1.2, can satisfy 1 watt of 10dB attenuator of power aluminium oxide ceramic substrate of the application requirements of present 3G network; Replace external like product, and on characteristic, fill up the blank of home products.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
It comprises that one is of a size of the aluminum oxide substrate of 2*3.5*0.635MM 1 watt of 10dB attenuator of a kind of aluminium oxide ceramic substrate; The back up of said aluminum oxide substrate has back of the body conducting shell; The front of said aluminum oxide substrate is printed with lead and membranaceous resistance, and said lead connects said membranaceous resistance and is connected to form T type attenuator circuit.
Preferably, be printed with transparent high temperature resistant resistance protection film on the said membranaceous resistance.
Preferably, said attenuator circuit is along the center line symmetry of said aluminum oxide substrate.
Technique scheme has following beneficial effect: 1 watt of 10dB attenuator of this aluminium oxide ceramic substrate is in a state of symmetry fully by attenuator circuit; Volume is little, and high frequency characteristics is good, and is stable and reliable for performance easy for installation; Leadless environment-friendly, resistance accuracy and attenuation accuracy are high; The stability of circuit gets a promotion, and has broken the situation that original attenuator can only be applied to low frequency, makes attenuator can be applied to the network of 2G-3G.Can be widely used in the production of microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; 1 watt of 10dB attenuator of this aluminium oxide ceramic substrate comprises that one is of a size of the aluminum oxide substrate 1 of 2*3.5*0.635MM; The back up of aluminum oxide substrate 1 has back of the body conducting shell, and the front of aluminum oxide substrate 1 is printed with lead 2 and membranaceous resistance R 1, R2, R3, and membranaceous resistance R 1, R2, R3 are connected to form attenuator circuit through lead; Attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit earth-continuity.This attenuator circuit is along the center line symmetry of aluminum oxide substrate; Membranaceous resistance R 1, R2, the last transparent high temperature resistant resistance protection film 3 that is printed with of R3; The upper surface of lead 2 and glass protection film 3 also is printed with one deck black protective film 4, can form protection to lead 2 and membranaceous resistance R 1, R2, R3 like this.
It is 50 ± 1.5 Ω that 1 watt of 10dB attenuator of this aluminium oxide ceramic substrate requires the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal input part gets into attenuator, through the progressively absorption to power of membranaceous resistance R 1, R3, R2, exports actual needed signal from output.
As substrate, volume is little with the aluminium oxide ceramics that is of a size of 2*3.5*0.635MM for 1 watt of 10dB attenuator of this aluminium oxide ceramic substrate, and high frequency characteristics is good; Stable and reliable for performance easy for installation; Leadless environment-friendly, resistance accuracy and attenuation accuracy are high, and the stability of circuit gets a promotion, and has broken the situation that original attenuator can only be applied to low frequency; Special design simultaneously lets attenuator circuit be in a state of symmetry fully; Make the stability of circuit get a promotion, broken the situation that original attenuator can only be applied to low frequency, make it can be applied to the network of 2G-3G.Can be widely used in the production of microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
More than 1 watt of 10dB attenuator of a kind of aluminium oxide ceramic substrate that the embodiment of the invention provided has been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. 1 watt of 10dB attenuator of an aluminium oxide ceramic substrate; It is characterized in that: it comprises that one is of a size of the aluminum oxide substrate of 2*3.5*0.635MM; The back up of said aluminum oxide substrate has back of the body conducting shell; The front of said aluminum oxide substrate is printed with lead and membranaceous resistance, and said lead connects said membranaceous resistance and is connected to form T type attenuator circuit
2. 1 watt of 10dB attenuator of aluminium oxide ceramic substrate according to claim 1 is characterized in that: be printed with transparent high temperature resistant resistance protection film on the said membranaceous resistance.
3. 1 watt of 10dB attenuator of aluminium oxide ceramic substrate according to claim 1 is characterized in that: said attenuator circuit is along the center line symmetry of said aluminum oxide substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102166943A CN102709653A (en) | 2012-06-28 | 2012-06-28 | 1w 10dB attenuating plate for aluminum oxide ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102166943A CN102709653A (en) | 2012-06-28 | 2012-06-28 | 1w 10dB attenuating plate for aluminum oxide ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102709653A true CN102709653A (en) | 2012-10-03 |
Family
ID=46902284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102166943A Pending CN102709653A (en) | 2012-06-28 | 2012-06-28 | 1w 10dB attenuating plate for aluminum oxide ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102709653A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101442295A (en) * | 2007-10-12 | 2009-05-27 | 阎跃军 | Coaxial connector type fixed attenuator |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
-
2012
- 2012-06-28 CN CN2012102166943A patent/CN102709653A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101442295A (en) * | 2007-10-12 | 2009-05-27 | 阎跃军 | Coaxial connector type fixed attenuator |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102709631A (en) | 30W 13db aluminum nitride ceramic substrate attenuation slice | |
| CN102709641A (en) | 1-watt 2dB attenuation sheet of high-precision aluminum oxide ceramic substrate | |
| CN102723554A (en) | 1-watt 5dB attenuation piece for aluminum oxide ceramic substrate | |
| CN202121043U (en) | 150 tile 30 dB attenuation sheet of high power aluminum nitride ceramic substrate | |
| CN102723548A (en) | 1W-20dB low-power aluminum oxide ceramic base plate attenuation sheet | |
| CN102709654A (en) | 1-watt 1dB attenuation sheet of aluminum oxide ceramic substrate | |
| CN203950895U (en) | 10 watts of 18dB attenuators of high frequency aluminium nitride ceramics | |
| CN102738545A (en) | Aluminum oxide ceramic substrate attenuation sheet with power of 1watt (W) and attenuation accuracy of 6dB | |
| CN102709653A (en) | 1w 10dB attenuating plate for aluminum oxide ceramic substrate | |
| CN102709643A (en) | 26dB attenuation sheet with power of 1 watt | |
| CN102723559A (en) | Ceramic substrate attenuator | |
| CN102709644A (en) | 1w 28DB attenuating plate for high heat-conductivity aluminum oxide ceramic substrate | |
| CN203481350U (en) | Beryllia ceramic plate 5W3db attenuation sheet | |
| CN102723549A (en) | 1-watt 22dB attenuation piece for aluminum oxide ceramic substrate | |
| CN104218282A (en) | Thick-film circuit aluminum nitride ceramic 10-watt 8dB attenuation plate meeting requirement on 4G (fourth-generation) communication | |
| CN102709652A (en) | 1-watt 17dB attenuation sheet of aluminum oxide ceramic substrate | |
| CN102709633A (en) | 1-watt 30dB attenuation sheet of aluminum oxide ceramic substrate | |
| CN102709634A (en) | 30-watt 17dB attenuation sheet of aluminum nitride ceramic substrate | |
| CN203950892U (en) | 2 watts of 6dB attenuators of high thermal conductance aluminium oxide ceramic substrate | |
| CN102709645A (en) | 1-watt 18dB attenuation sheet of aluminum oxide ceramic substrate | |
| CN102723560A (en) | 1-watt 14dB attenuator for aluminum oxide ceramic substrate | |
| CN102709637A (en) | Aluminum oxide ceramic substrate 1W 29dB attenuation sheet | |
| CN102723553A (en) | 1-watt 8dB attenuation piece for aluminum oxide ceramic substrate | |
| CN102709638A (en) | 1-watt 11dB attenuation sheet of symmetric aluminum oxide ceramic substrate | |
| CN104241774A (en) | Pi-type high-frequency high-accuracy 10-watt 21 dB attenuation piece |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121003 |