CN104241763A - High-power aluminum nitride ceramic substrate 100 W-27 dB attenuation slice - Google Patents
High-power aluminum nitride ceramic substrate 100 W-27 dB attenuation slice Download PDFInfo
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- CN104241763A CN104241763A CN201410231877.1A CN201410231877A CN104241763A CN 104241763 A CN104241763 A CN 104241763A CN 201410231877 A CN201410231877 A CN 201410231877A CN 104241763 A CN104241763 A CN 104241763A
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- aluminum nitride
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Abstract
The invention discloses a high-power aluminum nitride ceramic substrate 100 W-27 dB attenuation slice. The attenuation slice comprises an aluminum nitride substrate. A conductor layer is printed on the back surface of the aluminum nitride substrate, a plurality of resistors and silver paste wires are printed on the front surface of the aluminum nitride substrate, the resistors are connected through the silver paste wires to form an attenuation circuit, and glass protection films are printed on the resistors. Due to the fact that the resistor area is increased, the high or low temperature impact resistance of the attenuation slice is improved, and the performance indexes of the attenuation slice meet requirements. Meanwhile, the phenomenon that the resistors are damaged by quenching at a high temperature in the process of welding a lead at the output end is avoided, the risk that the attenuation slice breaks down in the actual use process due to quenching damage of the resistors is avoided, the circuit design is improved, the attenuation precision is improved, and therefore the attenuation slice can be applied to 4G networks.
Description
Technical field
The present invention relates to a kind of aluminium nitride ceramics attenuator, particularly a kind of high power aluminum nitride ceramic substrate 100W-27dB attenuator.
Background technology
Current most of communication base station is all that utilizing high power ceramic load sheet is to absorb reverse input power in communication component; high-power ceramic carrier sheet merely can only consume and absorb unnecessary power; and real-time monitoring cannot be done to the working condition of base station; cannot judge in time when base station operation breaks down, and protective effect is not had to equipment.
The power that attenuator not only oppositely can input in Absorbable rod communication component in communication base station, and part signal in communication component can be extracted, base station is monitored in real time, protective effect is had to equipment, but the aluminium nitride ceramics attenuator of current domestic 100W-27dB, its attenuation accuracy not only can only be accomplished within 1G frequency mostly, minority can accomplish 2G, and the more difficult control of the VSWR of attenuation accuracy and equipment configuration, market is wanted the requirement of attenuation accuracy, when attenuation accuracy do not reach require time or VSWR do not reach require time, the signal that output obtains does not meet actual requirement.When frequency range is higher than 2G, domestic attenuator, its attenuation accuracy more will can not meet requirement.
Summary of the invention
For above-mentioned the deficiencies in the prior art, it is high that the technical problem to be solved in the present invention is to provide a kind of attenuation accuracy, can use high power aluminum nitride ceramic substrate 100W-27dB attenuator in 3G frequency range.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of high power aluminum nitride ceramic substrate 100W-27dB attenuator; it comprises an aluminium nitride substrate; the back up of described aluminium nitride substrate has conductor layer; the front of described aluminium nitride substrate is printed with several resistance and silver slurry wire; described silver slurry wire connects described resistance and forms attenuator circuit, and described resistance is printed with glass protection film.
Preferably, the upper surface of described silver slurry wire and glass protection film is also printed with double-deck black protective film.
Preferably, one deck dielectric layer is printed with between described double shielding film.
Technique scheme has following beneficial effect: this high power aluminum nitride ceramic substrate 100W-27dB attenuator increases resistor area, makes the anti-high and low-temp impact property of attenuator increase like this, product performance index is met the requirements.To avoid when output welding lead high temperature to quench wound to resistance simultaneously, avoid because resistance is by the risk of hindering and can break down in actual use of quenching, improve the design of circuit, medium fine setting technology should, improve return loss and the attenuation accuracy of product, thus make product can be applied to 4G network.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1 is the structural representation in embodiment of the present invention front.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, this high power aluminum nitride ceramic substrate 100W-27dB attenuator comprises an aluminium nitride substrate 1, and the back up of aluminium nitride substrate 1 has conductor layer, and conductor layer forms by printing the printing of silver slurry.The front of aluminium nitride substrate 1 is printed with resistance R1, R2, R3, R4, R5 and silver slurry wire 2; resistance R1, R2, R3, R4, R5 are coupled together the attenuator circuit forming TT type structure by silver slurry wire 2; resistance R1, R2, R3, R4, R5 are all printed with glass protection film 3, and glass protection film 3 is for the protection of resistance R1, R2, R3, R4, R5.One deck black protective film 4 is also printed with at the whole circuit i.e. upper surface of silver slurry wire 2 and glass protection film 3; black protective film 4 can comprise whole circuit; black protective film 4 is printed with one deck dielectric layer 6; on dielectric layer 6; be printed with again one deck black protective film 5, black protective film 5 also can print brand and model.
This high power aluminum nitride ceramic substrate 100W-27dB attenuator requires that the resistance of input and ground connection is 50 ± 1.5 Ω, and the resistance of output and ground is 50 ± 1.5 Ω.Signal enters attenuator from input, and through resistance R1, R2, R5, R3, R4, to the progressively absorption of power, make the signal of output output required for reality.
This high power aluminum nitride ceramic substrate 100W-27dB attenuator increases resistor area, makes the anti-high and low-temp impact property of attenuator increase like this, product performance index is met the requirements.To avoid when output welding lead high temperature to quench wound to resistance simultaneously, avoid because resistance is by the risk of hindering and can break down in actual use of quenching, improve the design of circuit, medium fine setting technology should, improve return loss and the attenuation accuracy of product, thus make product can be applied to 4G network.
Above a kind of high power aluminum nitride ceramic substrate 100W-27dB attenuator that the embodiment of the present invention provides is described in detail; for one of ordinary skill in the art; according to the thought of the embodiment of the present invention; all will change in specific embodiments and applications; in sum; this description should not be construed as limitation of the present invention, and all any changes made according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. a high power aluminum nitride ceramic substrate 100W-27dB attenuator; it is characterized in that: it comprises an aluminium nitride substrate; the back up of described aluminium nitride substrate has conductor layer; the front of described aluminium nitride substrate is printed with several resistance and silver slurry wire; described silver slurry wire connects described resistance and forms attenuator circuit, and described resistance is printed with glass protection film.
2. high power aluminum nitride ceramic substrate 100W-27dB attenuator according to claim 1, is characterized in that: the upper surface of described silver slurry wire and glass protection film is also printed with double-deck black protective film.
3. high power aluminum nitride ceramic substrate 100W-27dB attenuator according to claim 2, is characterized in that: be printed with one deck dielectric layer between described double shielding film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410231877.1A CN104241763A (en) | 2014-05-28 | 2014-05-28 | High-power aluminum nitride ceramic substrate 100 W-27 dB attenuation slice |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410231877.1A CN104241763A (en) | 2014-05-28 | 2014-05-28 | High-power aluminum nitride ceramic substrate 100 W-27 dB attenuation slice |
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| Publication Number | Publication Date |
|---|---|
| CN104241763A true CN104241763A (en) | 2014-12-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410231877.1A Pending CN104241763A (en) | 2014-05-28 | 2014-05-28 | High-power aluminum nitride ceramic substrate 100 W-27 dB attenuation slice |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
| CN202121044U (en) * | 2011-07-22 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Large power aluminum nitride ceramic substrate 100 watts 30 dB attenuation slice |
| CN202121043U (en) * | 2011-07-22 | 2012-01-18 | 苏州市新诚氏电子有限公司 | 150 tile 30 dB attenuation sheet of high power aluminum nitride ceramic substrate |
-
2014
- 2014-05-28 CN CN201410231877.1A patent/CN104241763A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
| CN202121044U (en) * | 2011-07-22 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Large power aluminum nitride ceramic substrate 100 watts 30 dB attenuation slice |
| CN202121043U (en) * | 2011-07-22 | 2012-01-18 | 苏州市新诚氏电子有限公司 | 150 tile 30 dB attenuation sheet of high power aluminum nitride ceramic substrate |
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Application publication date: 20141224 |
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