CN102709640A - Aluminum nitride ceramic substrate 30W 27dB attenuation sheet - Google Patents
Aluminum nitride ceramic substrate 30W 27dB attenuation sheet Download PDFInfo
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- CN102709640A CN102709640A CN2012102165137A CN201210216513A CN102709640A CN 102709640 A CN102709640 A CN 102709640A CN 2012102165137 A CN2012102165137 A CN 2012102165137A CN 201210216513 A CN201210216513 A CN 201210216513A CN 102709640 A CN102709640 A CN 102709640A
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Abstract
The invention discloses an aluminum nitride ceramic substrate 30W 27dB attenuation sheet which comprises a 5*5*1MM aluminum nitride substrate, wherein the back surface of the aluminum nitride substrate is printed with a back conducting layer, the front surface of the aluminum nitride substrate is printed with conductors and film resistors, and the conductors connect the film resistors to form a TT-type attenuation circuit. The attenuation sheet fully considers the performance indexes in the aspect of scheme design, has the advantages of small size, favorable high frequency characteristic, stable and reliable properties, no lead, environmental protection, high resistance value precision and high attenuation precision, is convenient to install, can satisfy the application requirements for 3G network at present, and extends the series product line of 30W fixed film resistor-type attenuation sheets.
Description
Technical field
The present invention relates to a kind of aluminium nitride ceramics substrate attenuator, the attenuator of 30 watts of 27dB of particularly a kind of aluminium nitride ceramics substrate.
Background technology
Present most of communication base station all is that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component; High-power ceramic carrier sheet then can only merely consume the power of absorbing redundant; And can't do real-time monitoring to the working condition of base station; Work can't be made judgement when breaking down in time when the base station, and equipment is not had protective effect.The attenuator of having gathered three kinds of resistive arrangement not only can absorb the power of reverse input in the communication component and on high-frequency circuit, adjust power level in communication base station, relevant device has been played protective effect.
Because aluminium nitride ceramics still belongs to emerging industry, so on product line, do not present diversified general layout.Its attenuation accuracy of attenuator that exists on the market simultaneously can only accomplish that mostly minority can be accomplished 2G in the 1G frequency, and the difficult control of the VSWR of attenuation accuracy and equipment configuration.And market is very high to the requirement of attenuation accuracy, and the attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.When attenuation accuracy or VSWR do not reach when requiring, the signal that output obtains does not meet actual requirement.Attenuator in the market is when using frequency range to be higher than 2G, and its attenuation accuracy does not reach requirement, and it is big that return loss becomes, and has satisfied not the above frequency range application requirements of 2G.
Summary of the invention
Deficiency to above-mentioned prior art; The technical problem that the present invention will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 27 ± 1dB in the 3G frequency range with interior attenuation accuracy; Standing wave requires input in 1.2, and output can satisfy 30 watts of 27dB attenuators of aluminium nitride ceramics substrate of the application requirements of present 3G network in 1.25.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
30 watts of 27dB attenuators of a kind of aluminium nitride ceramics substrate; It comprises that one is of a size of the aluminium nitride substrate of 5*5*1MM; The back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and membranaceous resistance, and said lead connects said membranaceous resistance and is connected to form TT type attenuator circuit.
Preferably, be printed with transparent high temperature resistant resistance protection film on the said membranaceous resistance.
Preferably, said attenuator circuit is along the center line symmetry of said aluminium nitride substrate.
Technique scheme has following beneficial effect: 30 watts of 27dB attenuators of this aluminium nitride ceramics substrate are in a state of symmetry fully by attenuator circuit; Volume is little, and high frequency characteristics is good, and is stable and reliable for performance easy for installation; Leadless environment-friendly, resistance accuracy and attenuation accuracy are high; The stability of circuit gets a promotion, and has broken the situation that original attenuator can only be applied to low frequency, makes attenuator can be applied to the network of 2G-3G.Can be widely used in the production of microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; 30 watts of 27dB attenuators of this aluminium nitride ceramics substrate comprise that one is of a size of the aluminium nitride substrate 1 of 5*5*1MM; The back up of aluminium nitride substrate 1 has back of the body conducting shell, and the front of aluminium nitride substrate 1 is printed with lead 2 and resistance R 1, R2, R3, and resistance R 1, R2, R3 are connected to form attenuator circuit through lead; Attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit earth-continuity.This attenuator circuit is along the center line symmetry of aluminium nitride substrate, and the output of attenuator circuit is connected with a pad 5, and input is connected with a pad 6, and two pads 5,6 are symmetrical along the center line of aluminium nitride substrate.Resistance R 1, R2, the last glass protection film 3 that is printed with of R3, the upper surface of lead 2 and glass protection film 3 also is printed with one deck black protective film 4, can form protection to lead 2 and resistance R 1, R2, R3 like this.
It is 50 ± 1.5 Ω that 30 watts of 27dB attenuators of this aluminium nitride ceramics substrate require the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal input part gets into attenuator, through the progressively absorption to power of resistance R 1, R3, R2, exports actual needed signal from output,
30 watts of 27dB attenuators of this aluminium nitride ceramics substrate with the aluminium nitride ceramics that is of a size of 5*5*1MM as substrate; Let attenuator circuit be in a state of symmetry fully; Make the stability of circuit get a promotion, the client does not need painstakingly differentiation input and output in use simultaneously, and two pads 5,6 all can be used as input or output; Greatly facilitate the client, also reduced the client aborning because the wrong generation that causes defective products of input/output terminal welding.Also break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G, filled up domestic blank.The series product line of the value of differential declines has simultaneously enlarged the scope of application, gives the multiple selection in market.
More than 30 watts of 27dB attenuators of a kind of aluminium nitride ceramics substrate that the embodiment of the invention provided have been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. 30 watts of 27dB attenuators of an aluminium nitride ceramics substrate; It is characterized in that: it comprises that one is of a size of the aluminium nitride substrate of 5*5*1MM; The back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and membranaceous resistance, and said lead connects said membranaceous resistance and is connected to form TT type attenuator circuit.
2. 30 watts of 27dB attenuators of aluminium nitride ceramics substrate according to claim 1 is characterized in that: be printed with transparent high temperature resistant resistance protection film on the said membranaceous resistance.
3. 30 watts of 27dB attenuators of aluminium nitride ceramics substrate according to claim 1 is characterized in that: said attenuator circuit is along the center line symmetry of said aluminium nitride substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102165137A CN102709640A (en) | 2012-06-28 | 2012-06-28 | Aluminum nitride ceramic substrate 30W 27dB attenuation sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102165137A CN102709640A (en) | 2012-06-28 | 2012-06-28 | Aluminum nitride ceramic substrate 30W 27dB attenuation sheet |
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| Publication Number | Publication Date |
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| CN102709640A true CN102709640A (en) | 2012-10-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012102165137A Pending CN102709640A (en) | 2012-06-28 | 2012-06-28 | Aluminum nitride ceramic substrate 30W 27dB attenuation sheet |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0940845A2 (en) * | 1998-03-02 | 1999-09-08 | Sumitomo Electric Industries, Ltd. | Susceptor for semiconductor manufacturing equipment and process for producing the same |
| CN102361125A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W1dB attenuating piece of aluminium nitride ceramic substrate |
| CN202259630U (en) * | 2011-09-08 | 2012-05-30 | 苏州市新诚氏电子有限公司 | Aluminium nitride ceramic substrate based 20 watt 30 dB attenuator |
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2012
- 2012-06-28 CN CN2012102165137A patent/CN102709640A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0940845A2 (en) * | 1998-03-02 | 1999-09-08 | Sumitomo Electric Industries, Ltd. | Susceptor for semiconductor manufacturing equipment and process for producing the same |
| CN102361125A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W1dB attenuating piece of aluminium nitride ceramic substrate |
| CN202259630U (en) * | 2011-09-08 | 2012-05-30 | 苏州市新诚氏电子有限公司 | Aluminium nitride ceramic substrate based 20 watt 30 dB attenuator |
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Application publication date: 20121003 |