CN102723552A - 30-watt 4dB attenuator for aluminum nitride ceramic substrate - Google Patents
30-watt 4dB attenuator for aluminum nitride ceramic substrate Download PDFInfo
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- CN102723552A CN102723552A CN2012102165387A CN201210216538A CN102723552A CN 102723552 A CN102723552 A CN 102723552A CN 2012102165387 A CN2012102165387 A CN 2012102165387A CN 201210216538 A CN201210216538 A CN 201210216538A CN 102723552 A CN102723552 A CN 102723552A
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- aluminum nitride
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Abstract
The invention discloses a 30-watt 4dB attenuator for an aluminum nitride ceramic substrate. The 30-watt 4dB attenuator comprises an aluminum nitride substrate with a size of 5*5*1MM, wherein a back conductor layer is printed on a back side of the aluminum nitride substrate; a lead and resistors are printed on a front side of the aluminum nitride ceramic substrate; the resistors are connected through the lead to form a TT type attenuation circuit; an output end and an input end of the attenuation circuit are respectively connected with a bonding pad; and the two bonding pads are symmetrical about a central line of the aluminum ceramic substrate. According to the scheme design of the attenuator, various performance indexes are fully considered, high frequency and induction freeness are realized, the situation that an original attenuator is only applied to low frequency is broken through, the application requirement of a current 3G (3rd Generation) network can be met and a series production line of a 30-watt fixed resistance type attenuator is also extended.
Description
Technical field
The present invention relates to a kind of aluminium nitride ceramics substrate attenuator, the attenuator of 30 watts of 4dB of particularly a kind of aluminium nitride ceramics substrate.
Background technology
Present most of communication base station all is that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component; High-power ceramic carrier sheet then can only merely consume the power of absorbing redundant; And can't do real-time monitoring to the working condition of base station; Work can't be made judgement when breaking down in time when the base station, and equipment is not had protective effect.The attenuator of having gathered three kinds of resistive arrangement not only can absorb the power of reverse input in the communication component and on high-frequency circuit, adjust power level in communication base station, decouple, and relevant device has been played protective effect.
Because aluminium nitride ceramics still belongs to emerging industry, so on product line, do not present diversified general layout.Its attenuation accuracy of attenuator that exists on the market simultaneously can only accomplish that mostly minority can be accomplished 2G in the 1G frequency, and the difficult control of the VSWR of attenuation accuracy and equipment configuration.And market is very high to the requirement of attenuation accuracy, and the attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.When attenuation accuracy or VSWR do not reach when requiring, the signal that output obtains does not meet actual requirement.Attenuator in the market is when using frequency range to be higher than 2G, and its attenuation accuracy does not reach requirement, and it is big that return loss becomes, and has satisfied not the above frequency range application requirements of 2G.
Summary of the invention
Deficiency to above-mentioned prior art; The technical problem that the present invention will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 4 ± 0.5dB in the 3G frequency range with interior attenuation accuracy; Standing wave requires input in 1.2, and output can satisfy 30 watts of 4dB attenuators of aluminium nitride ceramics substrate of the application requirements of present 3G network in 1.25.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
30 watts of 4dB attenuators of a kind of aluminium nitride ceramics substrate; It comprises that one is of a size of the aluminium nitride substrate of 5*5*1MM; The back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and resistance, and said lead connects said resistance and is connected to form attenuator circuit, and said attenuator circuit is along the center line symmetry of said aluminium nitride substrate; The output of said attenuator circuit, input are connected with a pad respectively, and said two pads are along the center line symmetry of said aluminium nitride substrate.
Preferably, said circuit adopts the design of TT type attenuator circuit.
Preferably, the upper surface of said lead and glass protection film also is printed with one deck black protective film.
Technique scheme has following beneficial effect: 30 watts of 4dB attenuators of this aluminium nitride ceramics substrate are in a state of symmetry fully by attenuator circuit; Make the stability of circuit get a promotion, the client does not need painstakingly differentiation input and output in use simultaneously, greatly facilitates the client; Also having reduced the client causes the generation of defective products to embody the design of hommization fool proof because the input/output terminal welding is wrong aborning; And taken into account each item index of fixed resistance formula attenuator, and increased power capacity, enlarged the scope of product line; Also break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G.The series product line of the value of differential declines has simultaneously enlarged the scope of application, gives the multiple selection in market.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; 30 watts of 4dB attenuators of this aluminium nitride ceramics substrate comprise that one is of a size of the aluminium nitride substrate 1 of 5*5*1MM; The back up of aluminium nitride substrate 1 has back of the body conducting shell, and the front of aluminium nitride substrate 1 is printed with lead 2 and resistance R 1, R2, R3, and resistance R 1, R2, R3 are connected to form attenuator circuit through lead; Attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit earth-continuity.This attenuator circuit is along the center line symmetry of aluminium nitride substrate, and the output of attenuator circuit is connected with a pad 5, and input is connected with a pad 6, and two pads 5,6 are symmetrical along the center line of aluminium nitride substrate.Resistance R 1, R2, the last glass protection film 3 that is printed with of R3, the upper surface of lead 2 and glass protection film 3 also is printed with one deck black protective film 4, can form protection to lead 2 and resistance R 1, R2, R3 like this.
It is 50 ± 1.5 Ω that 30 watts of 4dB attenuators of this aluminium nitride ceramics substrate require the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal input part gets into attenuator, through the progressively absorption to power of resistance R 1, R3, R2, exports actual needed signal from output,
30 watts of 4dB attenuators of this aluminium nitride ceramics substrate with the aluminium nitride ceramics that is of a size of 5*5*1MM as substrate; Let attenuator circuit be in a state of symmetry fully; Make the stability of circuit get a promotion, the client does not need painstakingly differentiation input and output in use simultaneously, and two pads 5,6 all can be used as input or output; Greatly facilitate the client, also reduced the client aborning because the wrong generation that causes defective products of input/output terminal welding.Also break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G.The series product line of the value of differential declines has simultaneously enlarged the scope of application, gives the multiple selection in market.
More than 30 watts of 4dB attenuators of a kind of aluminium nitride ceramics substrate that the embodiment of the invention provided have been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. 30 watts of 4dB attenuators of an aluminium nitride ceramics substrate; It is characterized in that: it comprises the aluminium nitride substrate of a 5*5*1MM; The back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and resistance, and said lead connects said resistance and is connected to form attenuator circuit, and said attenuator circuit is along the center line symmetry of said aluminium nitride substrate.
2. 30 watts of 4dB attenuators of aluminium nitride ceramics substrate according to claim 1 is characterized in that: said circuit adopts the design of TT type attenuator circuit.
3. 30 watts of 4dB attenuators of aluminium nitride ceramics substrate according to claim 1, it is characterized in that: the upper surface of said lead and glass protection film also is printed with one deck black protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102165387A CN102723552A (en) | 2012-06-28 | 2012-06-28 | 30-watt 4dB attenuator for aluminum nitride ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102165387A CN102723552A (en) | 2012-06-28 | 2012-06-28 | 30-watt 4dB attenuator for aluminum nitride ceramic substrate |
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| Publication Number | Publication Date |
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| CN102723552A true CN102723552A (en) | 2012-10-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102165387A Pending CN102723552A (en) | 2012-06-28 | 2012-06-28 | 30-watt 4dB attenuator for aluminum nitride ceramic substrate |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN102361125A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W1dB attenuating piece of aluminium nitride ceramic substrate |
-
2012
- 2012-06-28 CN CN2012102165387A patent/CN102723552A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN102361125A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W1dB attenuating piece of aluminium nitride ceramic substrate |
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Application publication date: 20121010 |