CN102361139A - 30W and 20dB attenuator with aluminium nitride ceramic baseplate - Google Patents
30W and 20dB attenuator with aluminium nitride ceramic baseplate Download PDFInfo
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- CN102361139A CN102361139A CN2011102790472A CN201110279047A CN102361139A CN 102361139 A CN102361139 A CN 102361139A CN 2011102790472 A CN2011102790472 A CN 2011102790472A CN 201110279047 A CN201110279047 A CN 201110279047A CN 102361139 A CN102361139 A CN 102361139A
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- aluminium nitride
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Abstract
The invention discloses a 30W and 20dB attenuator with an aluminium nitride ceramic baseplate. The attenuator comprises a 5*5*1mm aluminium nitride baseplate, wherein a rear-of-conductor layer is printed at the back of the aluminium nitride baseplate; a wire and a resistor are printed on the front face of the aluminium nitride baseplate; and the wire is connected with the resistor to form an attenuation circuit which is symmetrical relative to the central line of the aluminium nitride baseplate, the output end and input end of the attenuation circuit are respectively connected with a bonding pad, and the two bonding pads are symmetrical relative to the central line of the aluminium nitride baseplate. By way of changing the size and surface resistivity of the resistor in the attenuation circuit, a required attenuation value can be obtained; and by means of design of the wire, better standing wave feature can be achieved. As the resistor area is enlarged, high and low temperature impact resisting property of the attenuator is enhanced, thereby avoiding hardening of the resistor caused by high temperature when a lead is welded at the output end, and then avoiding the risk of damage in practical use arising from the hardening of the resistor, therefore the property of the attenuator is greatly improved, which changes the situation that attenuators in the prior art are only applicable to low frequency, and ensures that the attenuator disclosed by the invention can be used in 2G-3G (second generation-third generation) networks.
Description
Technical field
The present invention relates to a kind of aluminium nitride ceramics attenuator, 30 watts of 20dB attenuators of particularly a kind of aluminium nitride ceramics substrate.
Background technology
Attenuator is to require to decay to certain ratio multiple (referring generally to power attenuation) to big voltage signal according to reality; Reach safe or desirable level value; Make things convenient for test job; Especially the extensive present most of communication base stations of utilization all are that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component in radio frequency and microwave, and high-power ceramic carrier sheet can only merely consume the power of absorbing redundant, and can't do real-time monitoring to the working condition of base station; Work can't be made judgement when breaking down in time when the base station, and equipment is not had protective effect.Attenuator not only can absorb the power of reverse input in the communication component in communication base station, and can extract part signal in the communication component, and the base station is monitored in real time, and equipment is had protective effect.Attenuator is a kind of energy consumption element, becomes heat after the power consumption.Can imagine that after material structure was confirmed, the power capacity of attenuator had just been confirmed; If the power that lets attenuator bear surpasses the limiting value of design, attenuator will be burnt, so the design of material chosen and line construction; And the size of size, production technology is very big to the influence of power, market to environmental protection and compact in size require increasingly high; The beryllium oxide of use does not before meet environmental protection requirement as baseplate material.
The attenuation accuracy of the aluminium nitride ceramics attenuator of present domestic 30W-20dB can only accomplish that mostly minority can be accomplished 2G in the 1G frequency, and the difficult control of the VSWR of attenuation accuracy and equipment configuration.And market is very high to the requirement of attenuation accuracy, and the attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.When attenuation accuracy or VSWR do not reach when requiring, the signal that output obtains does not meet actual requirement.Attenuator in the market is when using frequency range to be higher than 2G, and its attenuation accuracy does not reach requirement, and it is big that return loss becomes, and has satisfied not the above frequency range application requirements of 2G.
Summary of the invention
Deficiency to above-mentioned prior art; The technical problem that the present invention will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 20 ± 1dB in the 3G frequency range with interior attenuation accuracy; Standing wave requires to satisfy the market actual demand, can satisfy 30 watts of 20dB attenuators of aluminium nitride ceramics substrate of the application requirements of present 3G network.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
30 watts of 20dB attenuators of a kind of aluminium nitride ceramics substrate, it comprises the aluminium nitride substrate of a 5*5*1MM, the back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and resistance; Said lead connects said resistance and is connected to form attenuator circuit, and said attenuator circuit is along the center line symmetry of said aluminium nitride substrate, and the output of said attenuator circuit, input are connected with a pad respectively; Said two pads are symmetrical along the center line of said aluminium nitride substrate.This product is based on advanced person's thick-film technique production.
Preferably, be printed with glass protection film on the said resistance.
Preferably, the upper surface of said lead and glass protection film also is printed with one deck black protective film.
Preferably, said attenuator circuit adopts T type circuit design
Technique scheme has following beneficial effect: 30 watts of 20dB attenuators of this aluminium nitride ceramics substrate are in a state of symmetry fully by attenuator circuit; Make the stability of circuit get a promotion; The client does not need painstakingly differentiation input and output in use simultaneously; Greatly facilitate the client, also reduced the client aborning because the wrong generation that causes defective products of input/output terminal welding.The resistor area that this design has simultaneously increased as far as possible increases its anti-high and low-temp impact property, has avoided when the output welding lead; High temperature is to the wound of quenching of resistance; Avoided because of the resistance wound of being quenched, the risk that can break down in actual use makes the performance of attenuator be greatly improved; Break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; 30 watts of 20dB attenuators of this aluminium nitride ceramics substrate comprise the aluminium nitride substrate 1 of a 5*5*1MM; The back up of aluminium nitride substrate 1 has back of the body conducting shell, and the front of aluminium nitride substrate 1 is printed with lead 2 and resistance R 1, R2, R3, and resistance R 1, R2, R3 are connected to form attenuator circuit through lead; Attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit earth-continuity.This attenuator circuit is along the center line symmetry of aluminium nitride substrate, and the output of attenuator circuit is connected with a pad 5, and input is connected with a pad 6, and two pads 5,6 are symmetrical along the center line of aluminium nitride substrate.Resistance R 1, R2, the last glass protection film 3 that is printed with of R3, the upper surface of lead 2 and glass protection film 3 also is printed with one deck black protective film 4, can form protection to lead 2 and resistance R 1, R2, R3 like this.All technologies are based on advanced person's thick-film technique production.
It is 50 ± 1.5 Ω that 30 watts of 20dB attenuators of this aluminium nitride ceramics substrate require the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal input part gets into attenuator, through the progressively absorption to power of resistance R 1, R3, R2, exports actual needed signal from output.
30 watts of 20dB attenuators of this aluminium nitride ceramics substrate with the aluminium nitride substrate of 5*5*1MM as substrate; Let attenuator circuit be in a state of symmetry fully; Make the stability of circuit get a promotion, the client does not need painstakingly differentiation input and output in use simultaneously, and two pads 5,6 all can be used as input or output; Greatly facilitate the client, also reduced the client aborning because the wrong generation that causes defective products of input/output terminal welding.The resistor area that this design has simultaneously increased as far as possible increases its anti-high and low-temp impact property, has avoided when the output welding lead; High temperature is to the wound of quenching of resistance; Avoided because of the resistance wound of being quenched, the risk that can break down in actual use makes the performance of attenuator be greatly improved; Break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G.
More than 30 watts of 20dB attenuators of a kind of aluminium nitride ceramics substrate that the embodiment of the invention provided have been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (5)
1. 30 watts of 20dB attenuators of an aluminium nitride ceramics substrate; It is characterized in that: it comprises the aluminium nitride substrate of a 5*5*1MM; The back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and resistance, and said lead connects said resistance and is connected to form attenuator circuit, and said attenuator circuit is along the center line symmetry of said aluminium nitride substrate; The output of said attenuator circuit, input are connected with a pad respectively, and said two pads are along the center line symmetry of said aluminium nitride substrate.
2. 30 watts of 20dB attenuators of aluminium nitride ceramics substrate according to claim 1 is characterized in that: be printed with glass protection film on the said resistance.
3. 30 watts of 20dB attenuators of aluminium nitride ceramics substrate according to claim 1, it is characterized in that: the upper surface of said lead and glass protection film also is printed with one deck black protective film.
4. 30 watts of 20dB attenuators of aluminium nitride ceramics substrate according to claim 1 is characterized in that: said attenuator circuit adopts T type circuit structure.
5. 30 watts of 20dB attenuators of aluminium nitride ceramics substrate according to claim 1 is characterized in that: said silver slurry lead is connected through ground connection silver slurry with said conductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102790472A CN102361139A (en) | 2011-09-20 | 2011-09-20 | 30W and 20dB attenuator with aluminium nitride ceramic baseplate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102790472A CN102361139A (en) | 2011-09-20 | 2011-09-20 | 30W and 20dB attenuator with aluminium nitride ceramic baseplate |
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| CN102361139A true CN102361139A (en) | 2012-02-22 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101442295A (en) * | 2007-10-12 | 2009-05-27 | 阎跃军 | Coaxial connector type fixed attenuator |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| JP2010186132A (en) * | 2009-02-13 | 2010-08-26 | Nec Corp | Reflected light attenuator |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
| CN202259636U (en) * | 2011-09-20 | 2012-05-30 | 苏州市新诚氏电子有限公司 | 30W-20dB aluminum nitride ceramic substrate attenuation sheet |
-
2011
- 2011-09-20 CN CN2011102790472A patent/CN102361139A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101442295A (en) * | 2007-10-12 | 2009-05-27 | 阎跃军 | Coaxial connector type fixed attenuator |
| JP2010186132A (en) * | 2009-02-13 | 2010-08-26 | Nec Corp | Reflected light attenuator |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
| CN202259636U (en) * | 2011-09-20 | 2012-05-30 | 苏州市新诚氏电子有限公司 | 30W-20dB aluminum nitride ceramic substrate attenuation sheet |
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Application publication date: 20120222 |