CN104218294A - Efficient 2w 5dB attenuator with aluminum oxide ceramic substrate - Google Patents
Efficient 2w 5dB attenuator with aluminum oxide ceramic substrate Download PDFInfo
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- CN104218294A CN104218294A CN201410235867.5A CN201410235867A CN104218294A CN 104218294 A CN104218294 A CN 104218294A CN 201410235867 A CN201410235867 A CN 201410235867A CN 104218294 A CN104218294 A CN 104218294A
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- aluminum oxide
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- oxide ceramic
- aluminium oxide
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Abstract
The invention discloses an efficient 2w 5dB attenuator with an aluminum oxide ceramic substrate. The attenuator comprises the aluminum oxide substrate 5.0*6.0*0.635MM. A back conduction layer is printed on the back of the aluminum oxide substrate. A wire and resistors are printed on the front of the aluminum oxide substrate. The wire is connected with the resistors to form an attenuation circuit. The resistors R1, R2, R3 and R4 of the attenuation circuit are identical in size, so that the whole circuit is more balanced and performance and attenuation precision are improved. The attenuator is of a series of low-power attenuators, various performance indicators are optimized, foreign like products are replaced, and the domestic blank is filled.
Description
Technical field
The present invention relates to a kind of aluminium oxide ceramics attenuator, particularly a kind of high efficiency aluminium oxide ceramic substrate 2 watts of 5dB attenuators.
Background technology
The attenuator being integrated with 5 resistive arrangement is at present widely used in the apparatus field such as Aeronautics and Astronautics, radar, radio station, broadcast communication.Especially in cable television system, attenuator is widely used to meet the requirement of multiport to level.Due to the external research and development to like product and manufacture than domestic start to walk Zao, status that product line or product performance are all had the advantage.
Its attenuation accuracy of attenuator simultaneously domestic market existed can only be accomplished within 1G frequency mostly, and minority can accomplish 2G, and the more difficult control of the VSWR of attenuation accuracy and equipment configuration.When attenuation accuracy or VSWR do not reach require time, the signal that output obtains does not meet actual requirement.When attenuator uses frequency range higher than 2G, its attenuation accuracy does not reach requirement, and return loss becomes large, can not meet the frequency range application requirement of more than 2G.
Along with the continuous maturation in market, the use of client to product is tending towards rationalization, and high-end attenuator no doubt has its advantage, but high cost is also inevitable realistic problem.And more client starts to turn on moderate cost, quality meets the product of the instructions for use of cost.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention is to provide a kind of resistance and meets 96.2 ± 3% Ω, within 3G frequency range, attenuation accuracy is 5 ± 0.5dB, standing wave requires that input, output are within 1.2, the high efficiency aluminium oxide ceramic substrate that the application that can meet current 3G network requires 2 watts of 5dB attenuators, replace same kind of products at abroad, and characteristically fill up the blank of home products.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of high efficiency aluminium oxide ceramic substrate 2 watts of 5dB attenuators, it comprises the aluminum oxide substrate of a 5.0*6.0*0.635MM, the back up of described aluminum oxide substrate has back of the body conducting shell, the front of described aluminum oxide substrate is printed with wire and resistance, described wire connects described resistance and is connected to form attenuator circuit, described attenuator circuit R1, R2, R3, R4 tetra-resistance measure-alike, makes whole circuit more balance, improves performance and attenuation accuracy.
Preferably, described resistance adopts the printing of aluminium oxide ceramics special resistors slurry to form.
Preferably, the upper surface of described wire and glass protection film is also printed with one deck black protective film.
Technique scheme has following beneficial effect: this high efficiency aluminium oxide ceramic substrate 2 watts of 5dB attenuators are in the state of a full symmetric by attenuator circuit, this small product size is little, frequency characteristic is good, the stability of circuit gets a promotion, break the situation that original attenuator can only be applied to low frequency, make attenuator can be applied to the network of 2G-3G.The application of the alumina ceramic material of low cost simultaneously, while meeting power and microwave property, effectively reduce the cost of product, the production of the microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication can be widely used in.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, this high efficiency aluminium oxide ceramic substrate 2 watts of 5dB attenuators comprise the aluminum oxide substrate 1 of a 5.0*6.0*0.635MM, and the back up of aluminum oxide substrate 1 has conductor layer, and conductor layer forms by printing the printing of silver slurry.The front of aluminum oxide substrate 1 is printed with resistance R1, R2, R3, R4, R5 and silver slurry wire 2; resistance R1, R2, R3, R4, R5 are coupled together the attenuator circuit of formation one π type structure by silver slurry wire 2; resistance R1, R2, R3, R4, R5 are all printed with glass protection film 3, and glass protection film 3 is for the protection of resistance R1, R2, R3, R4, R5.Also be printed with one deck black protective film 4 at the whole circuit i.e. upper surface of silver slurry wire 2 and glass protection film 3, black protective film 4 can be protected whole circuit, and black protective film 4 also can print brand and model.
This high efficiency aluminium oxide ceramic substrate 2 watts of 5dB attenuators require that the impedance of input and ground connection is 96.2 ± 3% Ω, and the impedance of output and ground is 96.2 ± 3% Ω.Signal input part enters attenuator, through resistance R1, R2, R3, R4, R5 progressively absorption to power, exports the signal required for reality from output.
This high efficiency aluminium oxide ceramic substrate 2 watts of 5dB attenuators are in the state of a full symmetric by attenuator circuit, this small product size is little, frequency characteristic is good, the stability of circuit gets a promotion, break the situation that original attenuator can only be applied to low frequency, make attenuator can be applied to the network of 2G-3G.The application of the alumina ceramic material of low cost simultaneously, while meeting power and microwave property, effectively reduce the cost of product, the production of the microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication can be widely used in.Above a kind of high efficiency aluminium oxide ceramic substrate 2 watts of 5dB attenuators that the embodiment of the present invention provides are described in detail; for one of ordinary skill in the art; according to the thought of the embodiment of the present invention; all will change in specific embodiments and applications; in sum; this description should not be construed as limitation of the present invention, and all any changes made according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. a high efficiency aluminium oxide ceramic substrate 2 watts of 5dB attenuators, it is characterized in that: it comprises the aluminum oxide substrate of a 5.0*6.0*0.635MM, the back up of described aluminum oxide substrate has back of the body conducting shell, the front of described aluminum oxide substrate is printed with wire and resistance, described wire connects described resistance and is connected to form attenuator circuit, described attenuator circuit R1, R2, R3, R4 tetra-resistance measure-alike, makes whole circuit more balance, improves performance and attenuation accuracy.
2. high efficiency aluminium oxide ceramic substrate according to claim 12 watts of 5dB attenuators, is characterized in that: described resistance adopts the printing of aluminium oxide ceramics special resistors slurry to form.
3. high efficiency aluminium oxide ceramic substrate according to claim 12 watts of 5dB attenuators, is characterized in that: the upper surface of described wire and glass protection film is also printed with one deck black protective film.
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CN201410235867.5A CN104218294A (en) | 2014-05-29 | 2014-05-29 | Efficient 2w 5dB attenuator with aluminum oxide ceramic substrate |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4349792A (en) * | 1978-07-14 | 1982-09-14 | Kings Electronics Co., Inc. | Pi pad attenuator |
CN101916900A (en) * | 2010-07-30 | 2010-12-15 | 合肥佰特微波技术有限公司 | Pellet resistor with multi-cascade attenuator circuit |
CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
US20130169386A1 (en) * | 2011-12-28 | 2013-07-04 | Sae Magnetics (H.K.) Ltd. | Attenuator |
-
2014
- 2014-05-29 CN CN201410235867.5A patent/CN104218294A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4349792A (en) * | 1978-07-14 | 1982-09-14 | Kings Electronics Co., Inc. | Pi pad attenuator |
CN101916900A (en) * | 2010-07-30 | 2010-12-15 | 合肥佰特微波技术有限公司 | Pellet resistor with multi-cascade attenuator circuit |
CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
US20130169386A1 (en) * | 2011-12-28 | 2013-07-04 | Sae Magnetics (H.K.) Ltd. | Attenuator |
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Application publication date: 20141217 |