CN101075490A - 12kV fixed-sealed resistant voltage divider - Google Patents
12kV fixed-sealed resistant voltage divider Download PDFInfo
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- CN101075490A CN101075490A CN 200710101597 CN200710101597A CN101075490A CN 101075490 A CN101075490 A CN 101075490A CN 200710101597 CN200710101597 CN 200710101597 CN 200710101597 A CN200710101597 A CN 200710101597A CN 101075490 A CN101075490 A CN 101075490A
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- voltage divider
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Abstract
A 12kv resistance divider includes wire terminal, signal terminal, earthing terminal, ceramic wafer, resistance wire, and a green color protection layer covered by a black protection layer then rubber.
Description
Technical field
The present invention belongs to the electric power project engineering field, particularly relates to improved design of 12kV fixed sealing type resitstance voltage divider and the manufacturing used on a kind of intelligentized AC vacuum circuit-breaker.
Background technology
The 12kV AC vacuum circuit-breaker is an electromechanical integrated product, is widely used in electric power system 12kV and the indoor switchgear assembly of following electric pressure, and the intellectuality of breaker body, miniaturization are the developing direction of circuit breaker.Therefore design novel resitstance voltage divider summation current transformer and become the research and development emphasis of intelligent breaker with the integrated technology of circuit breaker, for the quality requirement of resitstance voltage divider also than higher.And 12kV AC vacuum circuit-breaker use at present is universal resitstance voltage divider product; its universal resitstance voltage divider product precision is low, stability is bad; and universal resitstance voltage divider product; only has the function that single Guan Heyu cut-offs; only be an actuator in the complete circuit, and circuit move various parameters and close, divide, protect command signal to rely on outside supporting component to provide.
Summary of the invention
The purpose of this invention is to provide a kind of 12kV fixed sealing type resitstance voltage divider, to overcome the shortcoming that present universal resitstance voltage divider product exists.
In order to realize that above-mentioned purpose technical scheme of the present invention is: 12kV fixed sealing type resitstance voltage divider, comprise binding post 1, signal terminal 2, earth terminal 3, ceramic substrate 4, resistance wire 5, greenism layer 6, the outer surface of described greenism layer 6 also is provided with black protective layer 7; The outer surface of described black protective layer 7 also is provided with silicon rubber 8; It is RuO that described resistance wire 5 adopts ruthenium
2The high temperature resistance slurry is made; It is that the diaphragm of raw material is made that described greenism layer 6 has adopted boron zinc BPb glass; Described black protective layer 7 is made for the raw material black protective film for boron zinc BPb glass.
Adopt that the present invention of above-mentioned measure has that body is long-pending little, low in energy consumption, precision is high, the good stability of resistor, dynamically good, bandwidth of big, the anti-electromagnetic interference performance of span and no ferromagnetic full advantage.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing.
Accompanying drawing 1 is a three-dimensional broken section structure chart of the present invention.
Embodiment
With reference to the accompanying drawings 1, Fig. 1 is a three-dimensional broken section structure chart of the present invention.Specific practice of the present invention is: well cutting ceramic substrate at first; on ceramic substrate 4, make printed resistor silk 5 and make binding post 1, signal terminal 2, earth terminal 3; and with 800 ℃ of sintering; again at resistive surface printing greenism layer 6; print black protective layer 7 after the laser resistor trimming again, and with 600 ℃ of high temperature sinterings.To weld 12kVAC binding post 1,5VAC signal terminal 2, earth terminal 3 with high temperature solder materials behind the divider resistance high temperature ageing.Adopt APG technology parcel silicon rubber 8 at last.For solving high-tension creepage and safe insulation, adopted unique silicon rubber numerical control injection-molding moulding process, resitstance voltage divider parcel with ceramic substrate, the high-low pressure leading-out terminal adopts high temperature wire, and be enclosed in the circuit breaker polar admittedly with epoxy resin, resitstance voltage divider and air are completely cut off to come, thereby the various unfavorable factors in the air ambient have been avoided, the environmental suitability of product is greatly improved, and, make the miniaturization of product become possibility because the dielectric strength of epoxy resin is much higher than air dielectric.This transducer has all been broken through the current/voltage transducer of traditional cored structure from the principle to the structure, have that volume is little, precision is high, big, the anti-electromagnetic interference performance of dynamic span is good, an advantage such as bandwidth and iron-free magnetic saturation.This 12kV fixed sealing type resitstance voltage divider volume is little, power consumption is lower than 2 watts, temperature coefficient and is lower than 100ppm, can directly be cemented in the pole of 12kV AC circuit breaker.
It is RuO that resistance wire 5 adopts ruthenium
2The high temperature resistance slurry is made; It is that the diaphragm of raw material is made that greenism layer 6 has adopted boron zinc BPb glass; Black protective layer 7 is made for the raw material black protective film for boron Pb glass.
Claims (2)
1.12kV the fixed sealing type resitstance voltage divider comprises binding post (1), signal terminal (2), earth terminal (3), ceramic substrate (4), resistance wire (5), greenism layer (6), it is characterized in that: the outer surface of described greenism layer (6) also is provided with black protective layer (7); The outer surface of described black protective layer (7) also is provided with silicon rubber (8).
2. 12kV fixed sealing type resitstance voltage divider according to claim 1 is characterized in that: described resistance wire (5) adopts (RuO of ruthenium system
2) high temperature low-temperature coefficient resistance slurry makes; Described greenism layer (6) employing boron zinc (BPb) glass is that the diaphragm of raw material is made; Described black protective layer (7) is made for the raw material black protective film for boron zinc (BPb) glass.
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CN2007101015979A CN101075490B (en) | 2007-05-01 | 2007-05-01 | 12kV fixed-sealed resistant voltage divider |
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CN2007101015979A CN101075490B (en) | 2007-05-01 | 2007-05-01 | 12kV fixed-sealed resistant voltage divider |
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CN101075490A true CN101075490A (en) | 2007-11-21 |
CN101075490B CN101075490B (en) | 2011-01-26 |
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Cited By (31)
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CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
CN102324606A (en) * | 2011-09-01 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 70W loading plate with impedance of 50 omega |
CN102332624A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 30W load sheet of aluminum nitride ceramic substrate with impedance of 50 omegas |
CN102332626A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 150-watt load sheet of large power aluminium nitride ceramic substrate with impedance of 50 ohms |
CN102332625A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 150W load sheet of high-power aluminum nitride ceramic substrate |
CN102354784A (en) * | 2011-08-25 | 2012-02-15 | 苏州市新诚氏电子有限公司 | Large power aluminum nitride ceramic substrate 100 watt 30 dB attenuation plate |
CN102361123A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W3dB attenuating piece of aluminium nitride ceramic substrate |
CN102361128A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | High-power load sheet (150W) using aluminum nitride ceramic substrate |
CN102361126A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 40W loading piece of aluminium oxide ceramic substrate with impedance being 50 omega |
CN102361127A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | SMT (Surface Mount Technology) type load sheet (30W) using alumina ceramic substrate |
CN102361122A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 30W-10dB attenuation plate of aluminium nitride ceramic substrate |
CN102361129A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W and 9dB attenuator with aluminium nitride ceramic baseplate |
CN102361138A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 120 W loading sheet of large-power aluminum nitride ceramic substrate with impedance of 50 ohms |
CN102361142A (en) * | 2011-09-20 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Load sheet (20W) having impedance of 50omega and provided with thin aluminum nitride ceramic substrate |
CN102361131A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Load sheet (125W) with impedance of 50omega using aluminum nitride ceramic substrate |
CN102361125A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W1dB attenuating piece of aluminium nitride ceramic substrate |
CN102361130A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Aluminium nitride ceramic substrate 50 watts load chip |
CN102361121A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Large power aluminium nitride ceramic substrate 250 watts load chip |
CN102361120A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | High-power attenuator (100W-10dB) using aluminum nitride ceramic substrate |
CN102427152A (en) * | 2011-09-01 | 2012-04-25 | 苏州市新诚氏电子有限公司 | 100W aluminum nitride ceramic substrate loading chip with wide solder pad and 50 Ohms impedance |
CN102427155A (en) * | 2011-09-16 | 2012-04-25 | 苏州市新诚氏电子有限公司 | 16W aluminum nitride ceramic substrate SMD (Surface Mounted Device) loading chip with 50 Ohms impedance |
CN102427154A (en) * | 2011-09-16 | 2012-04-25 | 苏州市新诚氏电子有限公司 | 200W large-power aluminum nitride ceramic substrate loading chip with 50 Ohms impedance |
CN102427156A (en) * | 2011-09-20 | 2012-04-25 | 苏州市新诚氏电子有限公司 | Aluminium nitride ceramic substrate 80 watts paster type load sheet |
CN102437401A (en) * | 2011-07-22 | 2012-05-02 | 苏州市新诚氏电子有限公司 | 150W easily-welded loading sheet with aluminium nitride ceramic substrate |
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CN102723561A (en) * | 2012-06-28 | 2012-10-10 | 苏州市新诚氏电子有限公司 | 250W small-size aluminum nitride ceramic base plate load sheet with impedance of 50 ohms |
CN104241762A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Novel optimized 150 W loading piece with aluminum nitride ceramic substrate |
CN104252929A (en) * | 2013-06-30 | 2014-12-31 | 天津市三环电阻有限公司 | High-precision copper bush leading-out type glass glaze resistance voltage divider |
CN104392809A (en) * | 2014-11-28 | 2015-03-04 | 中投仙能科技(苏州)有限公司 | Balancing resistor for lithium cell protector |
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CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
CN102437401A (en) * | 2011-07-22 | 2012-05-02 | 苏州市新诚氏电子有限公司 | 150W easily-welded loading sheet with aluminium nitride ceramic substrate |
CN102332626A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 150-watt load sheet of large power aluminium nitride ceramic substrate with impedance of 50 ohms |
CN102332624A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 30W load sheet of aluminum nitride ceramic substrate with impedance of 50 omegas |
CN102332625A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 150W load sheet of high-power aluminum nitride ceramic substrate |
CN102354784A (en) * | 2011-08-25 | 2012-02-15 | 苏州市新诚氏电子有限公司 | Large power aluminum nitride ceramic substrate 100 watt 30 dB attenuation plate |
CN102324606A (en) * | 2011-09-01 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 70W loading plate with impedance of 50 omega |
CN102427152A (en) * | 2011-09-01 | 2012-04-25 | 苏州市新诚氏电子有限公司 | 100W aluminum nitride ceramic substrate loading chip with wide solder pad and 50 Ohms impedance |
CN102361128A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | High-power load sheet (150W) using aluminum nitride ceramic substrate |
CN102361129A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W and 9dB attenuator with aluminium nitride ceramic baseplate |
CN102361123A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W3dB attenuating piece of aluminium nitride ceramic substrate |
CN102361122A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 30W-10dB attenuation plate of aluminium nitride ceramic substrate |
CN102361126A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 40W loading piece of aluminium oxide ceramic substrate with impedance being 50 omega |
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CN102361127A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | SMT (Surface Mount Technology) type load sheet (30W) using alumina ceramic substrate |
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CN102361130A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Aluminium nitride ceramic substrate 50 watts load chip |
CN102361121A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Large power aluminium nitride ceramic substrate 250 watts load chip |
CN102361131A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Load sheet (125W) with impedance of 50omega using aluminum nitride ceramic substrate |
CN102427155A (en) * | 2011-09-16 | 2012-04-25 | 苏州市新诚氏电子有限公司 | 16W aluminum nitride ceramic substrate SMD (Surface Mounted Device) loading chip with 50 Ohms impedance |
CN102427154A (en) * | 2011-09-16 | 2012-04-25 | 苏州市新诚氏电子有限公司 | 200W large-power aluminum nitride ceramic substrate loading chip with 50 Ohms impedance |
CN102361138A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 120 W loading sheet of large-power aluminum nitride ceramic substrate with impedance of 50 ohms |
CN102361142A (en) * | 2011-09-20 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Load sheet (20W) having impedance of 50omega and provided with thin aluminum nitride ceramic substrate |
CN102427156A (en) * | 2011-09-20 | 2012-04-25 | 苏州市新诚氏电子有限公司 | Aluminium nitride ceramic substrate 80 watts paster type load sheet |
CN102709647A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 300-watt loading sheet of high-power aluminum nitride ceramic substrate |
CN102709648A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 150w load plate for small-size high-power aluminum nitride ceramic substrate |
CN102709639A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 10w load plate for aluminum nitride ceramic substrate with impedance of 50ohm |
CN102723561A (en) * | 2012-06-28 | 2012-10-10 | 苏州市新诚氏电子有限公司 | 250W small-size aluminum nitride ceramic base plate load sheet with impedance of 50 ohms |
CN104252929A (en) * | 2013-06-30 | 2014-12-31 | 天津市三环电阻有限公司 | High-precision copper bush leading-out type glass glaze resistance voltage divider |
CN104241762A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Novel optimized 150 W loading piece with aluminum nitride ceramic substrate |
CN104392809A (en) * | 2014-11-28 | 2015-03-04 | 中投仙能科技(苏州)有限公司 | Balancing resistor for lithium cell protector |
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CN101075490B (en) | 2011-01-26 |
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