CN102214669A - 固态成像器件及其制造方法和电子设备 - Google Patents

固态成像器件及其制造方法和电子设备 Download PDF

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Publication number
CN102214669A
CN102214669A CN2011100824811A CN201110082481A CN102214669A CN 102214669 A CN102214669 A CN 102214669A CN 2011100824811 A CN2011100824811 A CN 2011100824811A CN 201110082481 A CN201110082481 A CN 201110082481A CN 102214669 A CN102214669 A CN 102214669A
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松村勇佑
町田贵志
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

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  • Transforming Light Signals Into Electric Signals (AREA)
CN2011100824811A 2010-04-08 2011-04-01 固态成像器件及其制造方法和电子设备 Pending CN102214669A (zh)

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JP2010089606A JP2011222708A (ja) 2010-04-08 2010-04-08 固体撮像装置、固体撮像装置の製造方法、および電子機器
JP2010-089606 2010-04-08

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CN104637959A (zh) * 2013-11-08 2015-05-20 苏州东微半导体有限公司 半导体感光器件及其制造方法
CN105191290A (zh) * 2013-04-08 2015-12-23 索尼公司 固态摄像器件及其驱动方法和电子装置
CN107431772A (zh) * 2015-03-25 2017-12-01 索尼公司 固态成像装置和用于驱动固态成像装置的方法
CN108632544A (zh) * 2017-03-21 2018-10-09 佳能株式会社 固态成像设备、成像系统和能移动的物体
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CN109326618A (zh) * 2017-07-31 2019-02-12 松下知识产权经营株式会社 摄像装置
CN110085608A (zh) * 2019-03-12 2019-08-02 上海集成电路研发中心有限公司 一种高性能cmos成像传感器结构及其制作方法
CN111415950A (zh) * 2019-01-07 2020-07-14 力晶科技股份有限公司 影像传感器及其制造方法
CN111448664A (zh) * 2017-12-09 2020-07-24 国立大学法人静冈大学 电荷调制元件和固态摄像装置
CN111670500A (zh) * 2018-03-22 2020-09-15 索尼半导体解决方案公司 摄像装置和电子设备
CN113437101A (zh) * 2015-02-27 2021-09-24 索尼公司 固态成像装置及电子装置
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JP5637384B2 (ja) * 2010-12-15 2014-12-10 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器
WO2012176454A1 (ja) * 2011-06-22 2012-12-27 パナソニック株式会社 固体撮像装置
TWI467751B (zh) * 2011-12-12 2015-01-01 Sony Corp A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device
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JP6021613B2 (ja) * 2012-11-29 2016-11-09 キヤノン株式会社 撮像素子、撮像装置、および、撮像システム
JP5925713B2 (ja) 2013-02-26 2016-05-25 株式会社東芝 固体撮像装置
JP6641605B2 (ja) * 2013-07-03 2020-02-05 ソニー株式会社 固体撮像装置およびその製造方法
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JP2015053411A (ja) 2013-09-09 2015-03-19 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、および電子機器
JP2015095468A (ja) * 2013-11-08 2015-05-18 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法、並びに電子機器
JP6595750B2 (ja) * 2014-03-14 2019-10-23 キヤノン株式会社 固体撮像装置及び撮像システム
KR20150109559A (ko) * 2014-03-20 2015-10-02 주식회사 동부하이텍 씨모스 이미지 센서 및 그 제조 방법
JP2015220339A (ja) * 2014-05-16 2015-12-07 株式会社東芝 固体撮像装置
KR102290502B1 (ko) 2014-07-31 2021-08-19 삼성전자주식회사 이미지 센서 및 이의 제조 방법
JP6700656B2 (ja) * 2014-10-31 2020-05-27 キヤノン株式会社 撮像装置
JP7029961B2 (ja) * 2015-05-19 2022-03-04 マジック リープ， インコーポレイテッド セミグローバルシャッタイメージャ
US10141356B2 (en) * 2015-10-15 2018-11-27 Semiconductor Components Industries, Llc Image sensor pixels having dual gate charge transferring transistors
JP6734649B2 (ja) * 2015-12-28 2020-08-05 キヤノン株式会社 撮像装置、撮像システム、及び、撮像装置の制御方法
JP2017143189A (ja) * 2016-02-10 2017-08-17 ルネサスエレクトロニクス株式会社 固体撮像素子
JP2017183563A (ja) * 2016-03-31 2017-10-05 ソニー株式会社 撮像装置、駆動方法、および、電子機器
JP6957226B2 (ja) 2017-06-20 2021-11-02 キヤノン株式会社 光電変換装置および機器
JP2019029643A (ja) * 2017-07-31 2019-02-21 パナソニックＩｐマネジメント株式会社 撮像装置
JP2018061060A (ja) * 2017-12-28 2018-04-12 キヤノン株式会社 固体撮像装置及び撮像システム
US10559614B2 (en) * 2018-03-09 2020-02-11 Semiconductor Components Industries, Llc Dual conversion gain circuitry with buried channels
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JP2020021775A (ja) * 2018-07-30 2020-02-06 キヤノン株式会社 固体撮像装置及び撮像システム
JP7327916B2 (ja) * 2018-09-11 2023-08-16 キヤノン株式会社 光電変換装置および機器
JP6929266B2 (ja) * 2018-12-17 2021-09-01 キヤノン株式会社 光電変換装置、光電変換システム、移動体
US11100586B1 (en) 2019-07-09 2021-08-24 Wells Fargo Bank, N.A. Systems and methods for callable options values determination using deep machine learning
TWI753547B (zh) * 2019-09-27 2022-01-21 台灣積體電路製造股份有限公司 圖像感測器及其製造方法
US11664398B2 (en) * 2019-09-27 2023-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor and manufacturing method thereof
KR102880833B1 (ko) * 2021-05-12 2025-11-03 주식회사 디비하이텍 인다이렉트 ToF 픽셀 구조
KR20230015162A (ko) * 2021-07-22 2023-01-31 에스케이하이닉스 주식회사 이미지 센싱 장치

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CN103686001B (zh) * 2012-09-21 2018-05-11 索尼半导体解决方案公司 固态图像传感器、用于其的方法及电子装置
CN103686001A (zh) * 2012-09-21 2014-03-26 索尼公司 固态图像传感器、用于其的方法及电子装置
CN105191290B (zh) * 2013-04-08 2019-04-05 索尼公司 固态摄像器件及其驱动方法和电子装置
CN105191290A (zh) * 2013-04-08 2015-12-23 索尼公司 固态摄像器件及其驱动方法和电子装置
CN104637959A (zh) * 2013-11-08 2015-05-20 苏州东微半导体有限公司 半导体感光器件及其制造方法
CN104637959B (zh) * 2013-11-08 2018-02-02 苏州东微半导体有限公司 半导体感光器件及其制造方法
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CN113437102A (zh) * 2015-02-27 2021-09-24 索尼公司 固态成像装置及电子装置
CN113437101A (zh) * 2015-02-27 2021-09-24 索尼公司 固态成像装置及电子装置
US10892293B2 (en) 2015-03-18 2021-01-12 Sony Corporation Solid-state imaging element, imaging device, and electronic device
US10163964B2 (en) 2015-03-18 2018-12-25 Sony Corporation Solid-state imaging element, imaging device, and electronic device
US10497740B2 (en) 2015-03-18 2019-12-03 Sony Corporation Solid-state imaging element, imaging device, and electronic device
US10692919B2 (en) 2015-03-18 2020-06-23 Sony Corporation Solid-state imaging element, imaging device, and electronic device
US10367026B2 (en) 2015-03-18 2019-07-30 Sony Corporation Solid-state imaging element, imaging device, and electronic device
CN107431772A (zh) * 2015-03-25 2017-12-01 索尼公司 固态成像装置和用于驱动固态成像装置的方法
CN107431772B (zh) * 2015-03-25 2020-06-16 索尼公司 固态成像装置和用于驱动固态成像装置的方法
CN108632544A (zh) * 2017-03-21 2018-10-09 佳能株式会社 固态成像设备、成像系统和能移动的物体
CN108632544B (zh) * 2017-03-21 2021-04-02 佳能株式会社 固态成像设备、成像系统和能移动的物体
CN109326618A (zh) * 2017-07-31 2019-02-12 松下知识产权经营株式会社 摄像装置
CN109326618B (zh) * 2017-07-31 2024-03-01 松下知识产权经营株式会社 摄像装置
CN111448664A (zh) * 2017-12-09 2020-07-24 国立大学法人静冈大学 电荷调制元件和固态摄像装置
CN111448664B (zh) * 2017-12-09 2023-04-28 国立大学法人静冈大学 电荷调制元件和固态摄像装置
CN111670500A (zh) * 2018-03-22 2020-09-15 索尼半导体解决方案公司 摄像装置和电子设备
US11558571B2 (en) 2018-07-19 2023-01-17 Sony Semiconductor Solutions Corporation Solid-state imaging element and imaging device
CN111415950A (zh) * 2019-01-07 2020-07-14 力晶科技股份有限公司 影像传感器及其制造方法
CN110085608B (zh) * 2019-03-12 2021-05-18 上海集成电路研发中心有限公司 一种高性能cmos成像传感器结构及其制作方法
CN110085608A (zh) * 2019-03-12 2019-08-02 上海集成电路研发中心有限公司 一种高性能cmos成像传感器结构及其制作方法

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Application publication date: 20111012