JP2011222708A - 固体撮像装置、固体撮像装置の製造方法、および電子機器 - Google Patents

固体撮像装置、固体撮像装置の製造方法、および電子機器 Download PDF

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JP2011222708A
JP2011222708A JP2010089606A JP2010089606A JP2011222708A JP 2011222708 A JP2011222708 A JP 2011222708A JP 2010089606 A JP2010089606 A JP 2010089606A JP 2010089606 A JP2010089606 A JP 2010089606A JP 2011222708 A JP2011222708 A JP 2011222708A
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JP2011222708A5 (enExample
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Yusuke Matsumura
勇佑 松村
Takashi Machida
貴志 町田
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Sony Corp
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Sony Corp
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Priority to JP2010089606A priority Critical patent/JP2011222708A/ja
Priority to CN2011100824811A priority patent/CN102214669A/zh
Priority to US13/078,569 priority patent/US8716719B2/en
Publication of JP2011222708A publication Critical patent/JP2011222708A/ja
Publication of JP2011222708A5 publication Critical patent/JP2011222708A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2010089606A 2010-04-08 2010-04-08 固体撮像装置、固体撮像装置の製造方法、および電子機器 Pending JP2011222708A (ja)

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Application Number Priority Date Filing Date Title
JP2010089606A JP2011222708A (ja) 2010-04-08 2010-04-08 固体撮像装置、固体撮像装置の製造方法、および電子機器
CN2011100824811A CN102214669A (zh) 2010-04-08 2011-04-01 固态成像器件及其制造方法和电子设备
US13/078,569 US8716719B2 (en) 2010-04-08 2011-04-01 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

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JP2010089606A JP2011222708A (ja) 2010-04-08 2010-04-08 固体撮像装置、固体撮像装置の製造方法、および電子機器

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JP2011222708A true JP2011222708A (ja) 2011-11-04
JP2011222708A5 JP2011222708A5 (enExample) 2013-05-09

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US (1) US8716719B2 (enExample)
JP (1) JP2011222708A (enExample)
CN (1) CN102214669A (enExample)

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JP2011249406A (ja) * 2010-05-24 2011-12-08 Brookman Technology Inc 固体撮像装置
CN102547168A (zh) * 2010-12-15 2012-07-04 索尼公司 固体摄像元件、固体摄像元件的驱动方法和电子装置
WO2012176454A1 (ja) * 2011-06-22 2012-12-27 パナソニック株式会社 固体撮像装置
JP2013171888A (ja) * 2012-02-17 2013-09-02 Canon Inc 撮像装置
JP2015188049A (ja) * 2014-03-14 2015-10-29 キヤノン株式会社 固体撮像装置及び撮像システム
US9219096B2 (en) 2013-02-26 2015-12-22 Kabushiki Kaisha Toshiba Solid-state imaging device
WO2016147901A1 (ja) * 2015-03-18 2016-09-22 ソニー株式会社 固体撮像素子、撮像装置、並びに電子機器
JP2018061060A (ja) * 2017-12-28 2018-04-12 キヤノン株式会社 固体撮像装置及び撮像システム
JP2018516013A (ja) * 2015-05-19 2018-06-14 マジック リープ， インコーポレイテッドＭａｇｉｃ Ｌｅａｐ，Ｉｎｃ． セミグローバルシャッタイメージャ
KR20180106989A (ko) * 2017-03-21 2018-10-01 캐논 가부시끼가이샤 고체 촬상 장치, 촬상 시스템 및 이동체
JP2019029643A (ja) * 2017-07-31 2019-02-21 パナソニックＩｐマネジメント株式会社 撮像装置
WO2020017115A1 (ja) * 2018-07-19 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
JP2020061576A (ja) * 2013-07-03 2020-04-16 ソニー株式会社 固体撮像装置およびその製造方法
JP2023121769A (ja) * 2017-07-31 2023-08-31 パナソニックＩｐマネジメント株式会社 撮像装置

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CN104637959B (zh) * 2013-11-08 2018-02-02 苏州东微半导体有限公司 半导体感光器件及其制造方法
JP2015095468A (ja) * 2013-11-08 2015-05-18 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法、並びに電子機器
KR20150109559A (ko) * 2014-03-20 2015-10-02 주식회사 동부하이텍 씨모스 이미지 센서 및 그 제조 방법
JP2015220339A (ja) * 2014-05-16 2015-12-07 株式会社東芝 固体撮像装置
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CN113437103A (zh) * 2015-02-27 2021-09-24 索尼公司 固态成像装置及电子装置
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JP6734649B2 (ja) * 2015-12-28 2020-08-05 キヤノン株式会社 撮像装置、撮像システム、及び、撮像装置の制御方法
JP2017143189A (ja) * 2016-02-10 2017-08-17 ルネサスエレクトロニクス株式会社 固体撮像素子
JP2017183563A (ja) * 2016-03-31 2017-10-05 ソニー株式会社 撮像装置、駆動方法、および、電子機器
JP6957226B2 (ja) 2017-06-20 2021-11-02 キヤノン株式会社 光電変換装置および機器
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JP2019169501A (ja) * 2018-03-22 2019-10-03 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び電子機器
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KR102262794B1 (ko) * 2017-03-21 2021-06-09 캐논 가부시끼가이샤 고체 촬상 장치, 촬상 시스템 및 이동체
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JP2019029643A (ja) * 2017-07-31 2019-02-21 パナソニックＩｐマネジメント株式会社 撮像装置
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JP2018061060A (ja) * 2017-12-28 2018-04-12 キヤノン株式会社 固体撮像装置及び撮像システム
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WO2020017115A1 (ja) * 2018-07-19 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置

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US20110248371A1 (en) 2011-10-13
US8716719B2 (en) 2014-05-06

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