CN102057439B - 使用下拉到调压的源极电压以移除系统噪声的非易失性存储器中的感测 - Google Patents
使用下拉到调压的源极电压以移除系统噪声的非易失性存储器中的感测 Download PDFInfo
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- CN102057439B CN102057439B CN200980121510.1A CN200980121510A CN102057439B CN 102057439 B CN102057439 B CN 102057439B CN 200980121510 A CN200980121510 A CN 200980121510A CN 102057439 B CN102057439 B CN 102057439B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/099,439 US7606076B2 (en) | 2007-04-05 | 2008-04-08 | Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise |
US12/099,439 | 2008-04-08 | ||
PCT/US2009/039211 WO2009126499A1 (en) | 2008-04-08 | 2009-04-01 | Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102057439A CN102057439A (zh) | 2011-05-11 |
CN102057439B true CN102057439B (zh) | 2014-02-12 |
Family
ID=40756584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980121510.1A Active CN102057439B (zh) | 2008-04-08 | 2009-04-01 | 使用下拉到调压的源极电压以移除系统噪声的非易失性存储器中的感测 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7606076B2 (zh) |
EP (1) | EP2272067B1 (zh) |
JP (1) | JP5470368B2 (zh) |
KR (1) | KR101559088B1 (zh) |
CN (1) | CN102057439B (zh) |
TW (1) | TWI407444B (zh) |
WO (1) | WO2009126499A1 (zh) |
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US8918699B2 (en) * | 2012-07-31 | 2014-12-23 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor storage apparatus |
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US9355739B2 (en) * | 2013-11-20 | 2016-05-31 | Globalfoundries Inc. | Bitline circuits for embedded charge trap multi-time-programmable-read-only-memory |
JP6262063B2 (ja) | 2014-03-18 | 2018-01-17 | 東芝メモリ株式会社 | 不揮発性メモリおよび書き込み方法 |
KR102167609B1 (ko) * | 2014-05-13 | 2020-10-20 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그것의 프로그램 방법 |
US9343160B1 (en) | 2015-02-11 | 2016-05-17 | Sandisk Technologies Inc. | Erase verify in non-volatile memory |
US9236139B1 (en) | 2015-02-11 | 2016-01-12 | Sandisk Technologies Inc. | Reduced current program verify in non-volatile memory |
KR102309841B1 (ko) | 2015-08-24 | 2021-10-12 | 삼성전자주식회사 | 표면 실장 기술의 적용에 따른 메모리 셀의 문턱 전압 산포 변화 복구 기능을 갖는 데이터 스토리지 및 그것의 동작 방법 |
CN106531212B (zh) * | 2015-09-11 | 2020-02-07 | 硅存储技术公司 | 将存储器单元用作源极线下拉电路的闪速存储器系统 |
ITUB20160956A1 (it) * | 2016-02-22 | 2017-08-22 | Sk Hynix Inc | Memoria flash NAND comprendente un page buffer per il rilevamento di corrente |
KR102660729B1 (ko) * | 2016-10-28 | 2024-04-26 | 삼성전자주식회사 | 전원 잡음을 검출하는 불휘발성 메모리 장치 및 그것의 동작 방법 |
US10319449B1 (en) * | 2017-12-12 | 2019-06-11 | Macronix International Co., Ltd. | Memory device and operation method thereof |
US10741257B1 (en) | 2019-06-26 | 2020-08-11 | Sandisk Technologies Llc | Dynamic bit line voltage and sensing time enhanced read for data recovery |
JP7309923B2 (ja) | 2019-12-09 | 2023-07-18 | 長江存儲科技有限責任公司 | フラッシュメモリデバイスにおけるセンス回路および検知動作方法 |
KR20210155432A (ko) | 2020-06-15 | 2021-12-23 | 삼성전자주식회사 | 불휘발성 메모리 장치, 및 그것의 동작 방법 |
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-
2008
- 2008-04-08 US US12/099,439 patent/US7606076B2/en active Active
-
2009
- 2009-04-01 CN CN200980121510.1A patent/CN102057439B/zh active Active
- 2009-04-01 KR KR1020107025112A patent/KR101559088B1/ko active IP Right Grant
- 2009-04-01 JP JP2011504065A patent/JP5470368B2/ja active Active
- 2009-04-01 EP EP09730788A patent/EP2272067B1/en active Active
- 2009-04-01 WO PCT/US2009/039211 patent/WO2009126499A1/en active Application Filing
- 2009-04-08 TW TW098111709A patent/TWI407444B/zh not_active IP Right Cessation
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US6195297B1 (en) * | 1998-02-04 | 2001-02-27 | Nec Corporation | Semiconductor memory device having pull-down function for non-selected bit lines |
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CN101180682A (zh) * | 2005-03-16 | 2008-05-14 | 桑迪士克股份有限公司 | 具有节省功率的读取和编程检验操作的非易失性存储器和方法 |
Also Published As
Publication number | Publication date |
---|---|
US7606076B2 (en) | 2009-10-20 |
JP5470368B2 (ja) | 2014-04-16 |
TW200949844A (en) | 2009-12-01 |
KR20110037935A (ko) | 2011-04-13 |
KR101559088B1 (ko) | 2015-10-08 |
CN102057439A (zh) | 2011-05-11 |
EP2272067A1 (en) | 2011-01-12 |
EP2272067B1 (en) | 2013-01-16 |
TWI407444B (zh) | 2013-09-01 |
JP2011517007A (ja) | 2011-05-26 |
US20080247241A1 (en) | 2008-10-09 |
WO2009126499A1 (en) | 2009-10-15 |
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