CN101512662A - 基于使用耦合感测邻近者来对非易失性存储器中的相邻存储元件之间的耦合进行补偿 - Google Patents
基于使用耦合感测邻近者来对非易失性存储器中的相邻存储元件之间的耦合进行补偿 Download PDFInfo
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- CN101512662A CN101512662A CNA2007800275411A CN200780027541A CN101512662A CN 101512662 A CN101512662 A CN 101512662A CN A2007800275411 A CNA2007800275411 A CN A2007800275411A CN 200780027541 A CN200780027541 A CN 200780027541A CN 101512662 A CN101512662 A CN 101512662A
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- memory device
- volatile memory
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- memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
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Claims (26)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/458,997 | 2006-07-20 | ||
US11/459,000 | 2006-07-20 | ||
US11/458,997 US7522454B2 (en) | 2006-07-20 | 2006-07-20 | Compensating for coupling based on sensing a neighbor using coupling |
US11/459,000 US7443729B2 (en) | 2006-07-20 | 2006-07-20 | System that compensates for coupling based on sensing a neighbor using coupling |
PCT/US2007/073737 WO2008011439A2 (en) | 2006-07-20 | 2007-07-18 | Compensating for coupling between adjacent storage elements in a nonvolatile memory, based on sensing a neighbour using coupling |
Publications (2)
Publication Number | Publication Date |
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CN101512662A true CN101512662A (zh) | 2009-08-19 |
CN101512662B CN101512662B (zh) | 2012-06-13 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2007800275411A Active CN101512662B (zh) | 2006-07-20 | 2007-07-18 | 基于使用耦合感测邻近者来对非易失性存储器中的相邻存储元件之间的耦合进行补偿 |
Country Status (2)
Country | Link |
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US (1) | US7522454B2 (zh) |
CN (1) | CN101512662B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102122526A (zh) * | 2010-01-08 | 2011-07-13 | 海力士半导体有限公司 | 半导体存储装置的位线预充电电压发生电路 |
CN109841237A (zh) * | 2017-11-29 | 2019-06-04 | 桑迪士克科技有限责任公司 | 用于非易失性存储器的利用负阈值感测的感测放大器 |
CN112331688A (zh) * | 2020-11-04 | 2021-02-05 | 中国电子科技集团公司第四十四研究所 | 一种同时实现大信号处理和高频转移的ccd结构 |
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US7894269B2 (en) * | 2006-07-20 | 2011-02-22 | Sandisk Corporation | Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells |
US7885119B2 (en) * | 2006-07-20 | 2011-02-08 | Sandisk Corporation | Compensating for coupling during programming |
US7443729B2 (en) * | 2006-07-20 | 2008-10-28 | Sandisk Corporation | System that compensates for coupling based on sensing a neighbor using coupling |
US7400535B2 (en) * | 2006-07-20 | 2008-07-15 | Sandisk Corporation | System that compensates for coupling during programming |
US7679965B2 (en) * | 2007-01-31 | 2010-03-16 | Sandisk Il Ltd | Flash memory with improved programming precision |
JP4564521B2 (ja) * | 2007-09-06 | 2010-10-20 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7652929B2 (en) * | 2007-09-17 | 2010-01-26 | Sandisk Corporation | Non-volatile memory and method for biasing adjacent word line for verify during programming |
US8130552B2 (en) * | 2008-09-11 | 2012-03-06 | Sandisk Technologies Inc. | Multi-pass programming for memory with reduced data storage requirement |
KR20100045739A (ko) * | 2008-10-24 | 2010-05-04 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 프로그램 방법, 그리고 그것을 포함하는 메모리 시스템 |
KR101636248B1 (ko) * | 2009-12-10 | 2016-07-06 | 삼성전자주식회사 | 플래시 메모리 장치, 이를 포함하는 플래시 메모리 시스템 및 이의 프로그램 방법 |
US8395936B2 (en) | 2011-05-09 | 2013-03-12 | Sandisk Technologies Inc. | Using channel-to-channel coupling to compensate floating gate-to-floating gate coupling in programming of non-volatile memory |
JP2011204356A (ja) * | 2011-07-19 | 2011-10-13 | Toshiba Corp | 不揮発性半導体記憶装置 |
US9183940B2 (en) | 2013-05-21 | 2015-11-10 | Aplus Flash Technology, Inc. | Low disturbance, power-consumption, and latency in NAND read and program-verify operations |
US9263137B2 (en) | 2013-06-27 | 2016-02-16 | Aplus Flash Technology, Inc. | NAND array architecture for multiple simutaneous program and read |
WO2015013689A2 (en) | 2013-07-25 | 2015-01-29 | Aplus Flash Technology, Inc. | Nand array hiarchical bl structures for multiple-wl and all -bl simultaneous erase, erase-verify, program, program-verify, and read operations |
WO2015037088A1 (ja) * | 2013-09-11 | 2015-03-19 | 株式会社 東芝 | 半導体記憶装置およびメモリシステム |
US9293205B2 (en) | 2013-09-14 | 2016-03-22 | Aplus Flash Technology, Inc | Multi-task concurrent/pipeline NAND operations on all planes |
US9613704B2 (en) | 2013-12-25 | 2017-04-04 | Aplus Flash Technology, Inc | 2D/3D NAND memory array with bit-line hierarchical structure for multi-page concurrent SLC/MLC program and program-verify |
US9336891B2 (en) | 2014-07-02 | 2016-05-10 | Sandisk Technologies Inc. | Look ahead read method for non-volatile memory |
WO2016014731A1 (en) | 2014-07-22 | 2016-01-28 | Aplus Flash Technology, Inc. | Yukai vsl-based vt-compensation for nand memory |
US9721652B2 (en) | 2015-11-17 | 2017-08-01 | Sandisk Technologies Llc | State dependent sensing for wordline interference correction |
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2006
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-
2007
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102122526A (zh) * | 2010-01-08 | 2011-07-13 | 海力士半导体有限公司 | 半导体存储装置的位线预充电电压发生电路 |
CN102122526B (zh) * | 2010-01-08 | 2015-06-24 | 海力士半导体有限公司 | 半导体存储装置的位线预充电电压发生电路 |
CN109841237A (zh) * | 2017-11-29 | 2019-06-04 | 桑迪士克科技有限责任公司 | 用于非易失性存储器的利用负阈值感测的感测放大器 |
CN109841237B (zh) * | 2017-11-29 | 2023-02-21 | 桑迪士克科技有限责任公司 | 用于非易失性存储器的利用负阈值感测的感测放大器 |
CN112331688A (zh) * | 2020-11-04 | 2021-02-05 | 中国电子科技集团公司第四十四研究所 | 一种同时实现大信号处理和高频转移的ccd结构 |
Also Published As
Publication number | Publication date |
---|---|
US7522454B2 (en) | 2009-04-21 |
US20080019193A1 (en) | 2008-01-24 |
CN101512662B (zh) | 2012-06-13 |
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