CN102017158B - 电子器件及使用溶液处理技术制造电子器件的方法 - Google Patents
电子器件及使用溶液处理技术制造电子器件的方法 Download PDFInfo
- Publication number
- CN102017158B CN102017158B CN200980114569.8A CN200980114569A CN102017158B CN 102017158 B CN102017158 B CN 102017158B CN 200980114569 A CN200980114569 A CN 200980114569A CN 102017158 B CN102017158 B CN 102017158B
- Authority
- CN
- China
- Prior art keywords
- layer
- trap
- ground floor
- bank
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 67
- 238000010129 solution processing Methods 0.000 title description 5
- 239000000463 material Substances 0.000 claims abstract description 157
- 238000000151 deposition Methods 0.000 claims abstract description 62
- 239000011368 organic material Substances 0.000 claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 claims abstract description 32
- 239000011810 insulating material Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 69
- 230000008021 deposition Effects 0.000 claims description 34
- 239000007788 liquid Substances 0.000 claims description 20
- 238000011278 co-treatment Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 10
- 238000011161 development Methods 0.000 claims description 6
- 238000006116 polymerization reaction Methods 0.000 claims description 5
- 238000004132 cross linking Methods 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 241
- 239000000243 solution Substances 0.000 description 36
- 239000004065 semiconductor Substances 0.000 description 33
- 229910052751 metal Inorganic materials 0.000 description 32
- 239000002184 metal Substances 0.000 description 32
- 229920000642 polymer Polymers 0.000 description 32
- 239000011159 matrix material Substances 0.000 description 22
- 238000005401 electroluminescence Methods 0.000 description 20
- 238000002347 injection Methods 0.000 description 17
- 239000007924 injection Substances 0.000 description 17
- 239000003989 dielectric material Substances 0.000 description 15
- 238000007641 inkjet printing Methods 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 238000000059 patterning Methods 0.000 description 12
- 239000002585 base Substances 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- 229920001940 conductive polymer Polymers 0.000 description 9
- 239000000412 dendrimer Substances 0.000 description 9
- 229920000736 dendritic polymer Polymers 0.000 description 9
- 239000012530 fluid Substances 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- -1 perfluoroalkyl amine Chemical class 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- 150000004696 coordination complex Chemical class 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 229920002313 fluoropolymer Polymers 0.000 description 7
- 239000011147 inorganic material Substances 0.000 description 7
- 229920003023 plastic Polymers 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000002322 conducting polymer Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 239000004811 fluoropolymer Substances 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229920000547 conjugated polymer Polymers 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 5
- 239000012044 organic layer Substances 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000002094 self assembled monolayer Substances 0.000 description 5
- 239000013545 self-assembled monolayer Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 239000010406 cathode material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 125000001072 heteroaryl group Chemical group 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 3
- 229920000412 polyarylene Polymers 0.000 description 3
- 229960002796 polystyrene sulfonate Drugs 0.000 description 3
- 239000011970 polystyrene sulfonate Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000013589 supplement Substances 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 241000555268 Dendroides Species 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 239000002262 Schiff base Substances 0.000 description 2
- 150000004753 Schiff bases Chemical class 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 239000010405 anode material Substances 0.000 description 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 2
- 229910001632 barium fluoride Inorganic materials 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- HVQAJTFOCKOKIN-UHFFFAOYSA-N flavonol Chemical compound O1C2=CC=CC=C2C(=O)C(O)=C1C1=CC=CC=C1 HVQAJTFOCKOKIN-UHFFFAOYSA-N 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- PJULCNAVAGQLAT-UHFFFAOYSA-N indeno[2,1-a]fluorene Chemical compound C1=CC=C2C=C3C4=CC5=CC=CC=C5C4=CC=C3C2=C1 PJULCNAVAGQLAT-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000001235 sensitizing effect Effects 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- BAXOFTOLAUCFNW-UHFFFAOYSA-N 1H-indazole Chemical compound C1=CC=C2C=NNC2=C1 BAXOFTOLAUCFNW-UHFFFAOYSA-N 0.000 description 1
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 1
- USLRUYZDOLMIRJ-UHFFFAOYSA-N 5-Hexenal Chemical compound C=CCCCC=O USLRUYZDOLMIRJ-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229920001621 AMOLED Polymers 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 241000871495 Heeria argentea Species 0.000 description 1
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 1
- 229910015711 MoOx Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- QLOSRAMQPISHQI-UHFFFAOYSA-N OC1=CC=CC2=CC=C3C=CC=NC3=C21.OC2=NC1=CC=CC=C1N=C2 Chemical compound OC1=CC=CC2=CC=C3C=CC=NC3=C21.OC2=NC1=CC=CC=C1N=C2 QLOSRAMQPISHQI-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical group [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 1
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 125000004442 acylamino group Chemical group 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 150000004777 chromones Chemical class 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000109 continuous material Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 125000005594 diketone group Chemical group 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 229920006335 epoxy glue Polymers 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 125000001841 imino group Chemical group [H]N=* 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000006069 physical mixture Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- YGSDEFSMJLZEOE-UHFFFAOYSA-M salicylate Chemical compound OC1=CC=CC=C1C([O-])=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 description 1
- 229960001860 salicylate Drugs 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0804875A GB2458454B (en) | 2008-03-14 | 2008-03-14 | Electronic devices and methods of making the same using solution processing techniques |
GB0804875.3 | 2008-03-14 | ||
PCT/EP2009/052974 WO2009112569A1 (en) | 2008-03-14 | 2009-03-13 | Electronic devices and methods of making them using solution processing techniques |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102017158A CN102017158A (zh) | 2011-04-13 |
CN102017158B true CN102017158B (zh) | 2014-04-09 |
Family
ID=39328232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980114569.8A Expired - Fee Related CN102017158B (zh) | 2008-03-14 | 2009-03-13 | 电子器件及使用溶液处理技术制造电子器件的方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110101317A1 (zh) |
JP (1) | JP2011526694A (zh) |
KR (1) | KR20110031900A (zh) |
CN (1) | CN102017158B (zh) |
DE (1) | DE112009000595T5 (zh) |
GB (1) | GB2458454B (zh) |
WO (1) | WO2009112569A1 (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180011862A (ko) | 2010-09-02 | 2018-02-02 | 메르크 파텐트 게엠베하 | 전자 디바이스용 중간층 |
FR2980041B1 (fr) * | 2011-09-14 | 2016-02-05 | Commissariat Energie Atomique | Transistor a effet de champ comprenant un limiteur de courant de fuite |
KR102082019B1 (ko) | 2012-04-25 | 2020-04-14 | 메르크 파텐트 게엠베하 | 유기 전자 소자용 뱅크 구조체 |
US9279924B2 (en) | 2012-08-21 | 2016-03-08 | Sharp Kabushiki Kaisha | Color filter substrate and method for producing same |
WO2014044359A1 (en) | 2012-09-21 | 2014-03-27 | Merck Patent Gmbh | Organic semiconductor formulations |
CN103700624B (zh) * | 2012-09-27 | 2016-06-15 | 乐金显示有限公司 | 有机发光显示装置的制造方法 |
EP2917948A1 (en) | 2012-11-08 | 2015-09-16 | Merck Patent GmbH | Method for producing organic electronic devices with bank structures, bank structures and electronic devices produced therewith |
CN102969333A (zh) * | 2012-11-13 | 2013-03-13 | 京东方科技集团股份有限公司 | 发光显示背板及其像素界定层的制备方法、显示装置 |
CN103187434A (zh) * | 2013-04-01 | 2013-07-03 | 京东方科技集团股份有限公司 | 有机电致发光器件及制备有机电致发光器件的方法 |
CN103337594B (zh) | 2013-05-30 | 2016-02-10 | 京东方科技集团股份有限公司 | 一种oled基板和显示装置 |
DE102013110037B4 (de) | 2013-09-12 | 2018-05-09 | Osram Oled Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelementes |
US9490447B2 (en) | 2014-07-03 | 2016-11-08 | Lg Display Co., Ltd. | Organic light emitting diode display device and method of fabricating the same |
EP3175497A4 (en) | 2014-08-01 | 2018-11-21 | Orthogonal Inc. | Photolithographic patterning of devices |
KR102401987B1 (ko) | 2014-08-01 | 2022-05-25 | 올싸거널 인코포레이티드 | 유기 전자 장치의 포토리소그래피 패터닝 |
CN107112418B (zh) | 2014-08-01 | 2021-01-15 | 正交公司 | 有机电子装置的光刻法图案化 |
JP6792547B2 (ja) * | 2014-08-01 | 2020-11-25 | オーソゴナル,インコーポレイテッド | 素子のフォトリソグラフパターン化方法 |
DE102014218667B4 (de) * | 2014-09-17 | 2023-05-17 | Pictiva Displays International Limited | Optoelektronische Baugruppe und Verfahren zum Herstellen einer optoelektronischen Baugruppe |
WO2016198142A1 (en) | 2015-06-12 | 2016-12-15 | Merck Patent Gmbh | Organic electronic devices with fluoropolymer bank structures |
CN112117318A (zh) * | 2016-07-29 | 2020-12-22 | 京东方科技集团股份有限公司 | Oled阵列基板及其制作方法、oled显示面板 |
US11282906B2 (en) | 2016-08-17 | 2022-03-22 | Merck Patent Gmbh | Electronic device with bank structures |
US10608062B2 (en) | 2017-03-16 | 2020-03-31 | Sharp Kabushiki Kaisha | Display device |
CN109192886B (zh) * | 2018-09-05 | 2021-01-22 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示面板及显示装置 |
CN109509782B (zh) * | 2019-01-02 | 2022-09-16 | 京东方科技集团股份有限公司 | 像素界定层及其制造方法、自发光显示面板、显示装置 |
CN112447924B (zh) * | 2019-08-30 | 2024-03-08 | 上海和辉光电股份有限公司 | 显示面板、制备方法及包括其的显示装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6249084B1 (en) * | 1998-01-14 | 2001-06-19 | Sharp Kabushiki Kaisha | Electroluminescence display panel and production method of the same |
JP2006162882A (ja) * | 2004-12-06 | 2006-06-22 | Sharp Corp | 表示装置用基板 |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4539507A (en) * | 1983-03-25 | 1985-09-03 | Eastman Kodak Company | Organic electroluminescent devices having improved power conversion efficiencies |
GB8909011D0 (en) | 1989-04-20 | 1989-06-07 | Friend Richard H | Electroluminescent devices |
US5150006A (en) | 1991-08-01 | 1992-09-22 | Eastman Kodak Company | Blue emitting internal junction organic electroluminescent device (II) |
US5432014A (en) * | 1991-11-28 | 1995-07-11 | Sanyo Electric Co., Ltd. | Organic electroluminescent element and a method for producing the same |
GB9317932D0 (en) | 1993-08-26 | 1993-10-13 | Cambridge Display Tech Ltd | Electroluminescent devices |
US5723873A (en) * | 1994-03-03 | 1998-03-03 | Yang; Yang | Bilayer composite electrodes for diodes |
EP0700917B1 (en) * | 1994-09-12 | 2002-05-08 | Motorola, Inc. | Light emitting devices comprising organometallic complexes |
US5798170A (en) * | 1996-02-29 | 1998-08-25 | Uniax Corporation | Long operating life for polymer light-emitting diodes |
DE69710781T2 (de) | 1996-07-29 | 2002-10-31 | Cambridge Display Tech Ltd | Elektrolumineszierende anordnungen mit elektrodenschutz |
ATE247372T1 (de) | 1996-09-04 | 2003-08-15 | Cambridge Display Tech Ltd | Lichtemittierende organische vorrichtungen mit verbesserter kathode |
JP3899566B2 (ja) | 1996-11-25 | 2007-03-28 | セイコーエプソン株式会社 | 有機el表示装置の製造方法 |
US6452218B1 (en) | 1997-06-10 | 2002-09-17 | Uniax Corporation | Ultra-thin alkaline earth metals as stable electron-injecting electrodes for polymer light emitting diodes |
GB9718393D0 (en) | 1997-08-29 | 1997-11-05 | Cambridge Display Tech Ltd | Electroluminescent Device |
DE69824439T2 (de) | 1997-10-23 | 2005-06-16 | Isis Innovation Ltd., Summertown | Lichtemittierende dendrimere |
GB9805476D0 (en) | 1998-03-13 | 1998-05-13 | Cambridge Display Tech Ltd | Electroluminescent devices |
GB2335884A (en) | 1998-04-02 | 1999-10-06 | Cambridge Display Tech Ltd | Flexible substrates for electronic or optoelectronic devices |
TW411726B (en) * | 1998-06-18 | 2000-11-11 | Siemens Ag | Manufacture of structurized electrodes |
US6268695B1 (en) | 1998-12-16 | 2001-07-31 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
GB9903251D0 (en) | 1999-02-12 | 1999-04-07 | Cambridge Display Tech Ltd | Opto-electric devices |
GB2348316A (en) | 1999-03-26 | 2000-09-27 | Cambridge Display Tech Ltd | Organic opto-electronic device |
KR20020066321A (ko) | 1999-09-03 | 2002-08-14 | 듀폰 디스플레이즈, 인크. | 유기 전자 장치의 캡슐 밀봉 |
US6413645B1 (en) | 2000-04-20 | 2002-07-02 | Battelle Memorial Institute | Ultrabarrier substrates |
CA2291302A1 (en) * | 1999-11-30 | 2001-05-30 | National Research Council Of Canada | An inorganic separator stack to micro-pattern organic layers |
JP2001345180A (ja) * | 2000-03-27 | 2001-12-14 | Semiconductor Energy Lab Co Ltd | 発光装置の作製方法 |
US7427529B2 (en) * | 2000-06-06 | 2008-09-23 | Simon Fraser University | Deposition of permanent polymer structures for OLED fabrication |
US6939624B2 (en) | 2000-08-11 | 2005-09-06 | Universal Display Corporation | Organometallic compounds and emission-shifting organic electrophosphorescence |
IL154960A0 (en) | 2000-10-10 | 2003-10-31 | Du Pont | Polymers having attached luminescent metal complexes and devices made with sych polymers |
EP1349435B8 (en) * | 2000-11-30 | 2018-09-19 | Canon Kabushiki Kaisha | Luminescent element and display |
JP4343528B2 (ja) | 2000-11-30 | 2009-10-14 | キヤノン株式会社 | 発光素子及び表示装置 |
US6693295B2 (en) * | 2000-12-25 | 2004-02-17 | Fuji Photo Film Co., Ltd. | Indole derivative, material for light-emitting device and light-emitting device using the same |
GB0104177D0 (en) | 2001-02-20 | 2001-04-11 | Isis Innovation | Aryl-aryl dendrimers |
DE60239730D1 (de) | 2001-02-20 | 2011-05-26 | Isis Innovation | Metall enthaltende dendrimere |
DE10109027A1 (de) | 2001-02-24 | 2002-09-05 | Covion Organic Semiconductors | Rhodium- und Iridium-Komplexe |
SG92833A1 (en) | 2001-03-27 | 2002-11-19 | Sumitomo Chemical Co | Polymeric light emitting substance and polymer light emitting device using the same |
RU2256652C1 (ru) | 2001-04-05 | 2005-07-20 | Санкио Компани, Лимитед | Соединение, фармацевтическая композиция, применение, способ предупреждения или лечения заболеваний |
DE10116962A1 (de) * | 2001-04-05 | 2002-10-10 | Covion Organic Semiconductors | Rhodium- und Iridium-Komplexe |
KR20030024690A (ko) | 2001-04-17 | 2003-03-26 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 저 황산염 및 고 금속 이온 함량을 갖는 전도성 투명중합체 층을 포함하는 led |
JP2002324679A (ja) | 2001-04-26 | 2002-11-08 | Honda Motor Co Ltd | 有機エレクトロルミネッセンス素子 |
JP4574936B2 (ja) | 2001-08-31 | 2010-11-04 | 日本放送協会 | 燐光発光性化合物及び燐光発光性組成物 |
EP1426399A4 (en) | 2001-09-04 | 2005-07-13 | Canon Kk | HIGHLY MOLECULAR COMPOUNDS AND ORGANIC LUMINESCENT DEVICES |
JP3864857B2 (ja) * | 2001-09-26 | 2007-01-10 | 株式会社日立製作所 | 画像表示装置 |
GB0207134D0 (en) * | 2002-03-27 | 2002-05-08 | Cambridge Display Tech Ltd | Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained |
JP4425531B2 (ja) * | 2002-08-21 | 2010-03-03 | 富士通株式会社 | 有機el装置及びその製造方法 |
JP2004192935A (ja) * | 2002-12-11 | 2004-07-08 | Hitachi Displays Ltd | 有機el表示装置 |
JP4206075B2 (ja) * | 2003-03-17 | 2009-01-07 | 富士フイルム株式会社 | 有機エレクトロルミネッセンス表示装置及びその製造方法 |
US6844215B1 (en) * | 2003-08-25 | 2005-01-18 | Eastman Kodak Company | Method of forming tapered drain-to-anode connectors in a back plane for an active matrix OLED device |
JP4556566B2 (ja) * | 2003-11-11 | 2010-10-06 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
GB0402559D0 (en) | 2004-02-05 | 2004-03-10 | Cambridge Display Tech Ltd | Molecular electronic device fabrication methods and structures |
JP4428231B2 (ja) * | 2004-12-27 | 2010-03-10 | セイコーエプソン株式会社 | カラーフィルタ基板、電気光学装置、および電子機器 |
JP4677937B2 (ja) * | 2005-07-20 | 2011-04-27 | セイコーエプソン株式会社 | 膜パターンの形成方法、デバイス、電気光学装置、電子機器、及びアクティブマトリクス基板の製造方法 |
KR101209046B1 (ko) * | 2005-07-27 | 2012-12-06 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법 |
DE112006002220B4 (de) * | 2005-08-23 | 2018-05-24 | Cambridge Display Technology Ltd. | Organische elektronische Vorrichtungsstrukturen und Herstellungsverfahren |
GB0618698D0 (en) | 2006-09-22 | 2006-11-01 | Cambridge Display Tech Ltd | Molecular electronic device fabrication methods and structures |
-
2008
- 2008-03-14 GB GB0804875A patent/GB2458454B/en not_active Expired - Fee Related
-
2009
- 2009-03-13 US US12/922,416 patent/US20110101317A1/en not_active Abandoned
- 2009-03-13 CN CN200980114569.8A patent/CN102017158B/zh not_active Expired - Fee Related
- 2009-03-13 KR KR1020107023043A patent/KR20110031900A/ko not_active Application Discontinuation
- 2009-03-13 DE DE112009000595T patent/DE112009000595T5/de not_active Withdrawn
- 2009-03-13 JP JP2010550207A patent/JP2011526694A/ja active Pending
- 2009-03-13 WO PCT/EP2009/052974 patent/WO2009112569A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6249084B1 (en) * | 1998-01-14 | 2001-06-19 | Sharp Kabushiki Kaisha | Electroluminescence display panel and production method of the same |
JP2006162882A (ja) * | 2004-12-06 | 2006-06-22 | Sharp Corp | 表示装置用基板 |
Also Published As
Publication number | Publication date |
---|---|
DE112009000595T5 (de) | 2011-02-17 |
CN102017158A (zh) | 2011-04-13 |
WO2009112569A1 (en) | 2009-09-17 |
US20110101317A1 (en) | 2011-05-05 |
GB2458454B (en) | 2011-03-16 |
GB0804875D0 (en) | 2008-04-16 |
GB2458454A (en) | 2009-09-23 |
JP2011526694A (ja) | 2011-10-13 |
KR20110031900A (ko) | 2011-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102017158B (zh) | 电子器件及使用溶液处理技术制造电子器件的方法 | |
CN102150292B (zh) | 有机电子器件以及使用溶液处理技术制造该器件的方法 | |
KR101628405B1 (ko) | 전자 디바이스 및 이것의 제조 방법 | |
JP5638944B2 (ja) | 有機薄膜トランジスタ | |
KR101474580B1 (ko) | 액티브 매트릭스 광학 장치 및 그 제조 방법 | |
JP2007123877A (ja) | 表示装置と表示装置の製造方法 | |
CN102124588A (zh) | 用于制造发光器件的组合物和方法 | |
JP2011510478A (ja) | 有機薄膜トランジスター、アクティブマトリックス有機光学デバイス、およびこれらの製造方法 | |
JP2007109629A (ja) | エレクトロルミネッセンス素子の製造方法及びエレクトロルミネッセンス素子 | |
CN101911328A (zh) | 有机薄膜晶体管、有源矩阵有机光学器件及其制造方法 | |
JP2006114480A (ja) | 有機電界発光表示装置及びその製造方法 | |
JP2009070708A (ja) | 表示装置及び表示装置の製造方法 | |
JP2006092809A (ja) | シートディスプレイ | |
JP2009104859A (ja) | 有機el素子及びその製造方法 | |
JP2006243127A (ja) | シートディスプレイ | |
US20110034033A1 (en) | Electronic Devices and Methods of Making the Same Using Solution Processing Techniques | |
US20100084638A1 (en) | Thin Film Transistor | |
JP4930303B2 (ja) | 表示装置の製造方法 | |
KR100708723B1 (ko) | 유기 박막 트랜지스터, 이의 제조 방법 및 상기 유기 박막트랜지스터를 구비한 평판 표시 장치 | |
KR20070054051A (ko) | 디스플레이장치의 제조방법 | |
KR20070079819A (ko) | 표시장치와 이의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20110916 Address after: cambridge Applicant after: Camgridge Display Technology Ltd. Address before: cambridge Applicant before: Camgridge Display Technology Ltd. Co-applicant before: Matsushita Electric Industrial Co., Ltd. |
|
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1156727 Country of ref document: HK |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1156727 Country of ref document: HK |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140409 Termination date: 20200313 |