CN101963758B - 杯芳烃混合分子玻璃光致抗蚀剂及使用方法 - Google Patents
杯芳烃混合分子玻璃光致抗蚀剂及使用方法 Download PDFInfo
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- CN101963758B CN101963758B CN2010102378473A CN201010237847A CN101963758B CN 101963758 B CN101963758 B CN 101963758B CN 2010102378473 A CN2010102378473 A CN 2010102378473A CN 201010237847 A CN201010237847 A CN 201010237847A CN 101963758 B CN101963758 B CN 101963758B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
部分保护水平 | 在0.26N TMAH中的溶解速率(nm/秒) |
35% | >3000 |
50% | 2,000 |
70% | 0 |
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/507,968 US7993812B2 (en) | 2009-07-23 | 2009-07-23 | Calixarene blended molecular glass photoresists and processes of use |
US12/507,968 | 2009-07-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101963758A CN101963758A (zh) | 2011-02-02 |
CN101963758B true CN101963758B (zh) | 2013-04-17 |
Family
ID=43497606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010102378473A Expired - Fee Related CN101963758B (zh) | 2009-07-23 | 2010-07-23 | 杯芳烃混合分子玻璃光致抗蚀剂及使用方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7993812B2 (zh) |
JP (1) | JP5385870B2 (zh) |
KR (1) | KR20110010056A (zh) |
CN (1) | CN101963758B (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011024967A1 (ja) * | 2009-08-31 | 2011-03-03 | 三菱瓦斯化学株式会社 | 環状化合物、その製造方法、感放射線性組成物およびレジストパターン形成方法 |
KR101669705B1 (ko) * | 2009-09-09 | 2016-10-27 | 미츠비시 가스 가가쿠 가부시키가이샤 | 환상 화합물, 그 제조 방법, 감방사선성 조성물 및 레지스트 패턴 형성 방법 |
JP5825104B2 (ja) * | 2009-10-06 | 2015-12-02 | 三菱瓦斯化学株式会社 | 環状化合物、その製造方法、感放射線性組成物およびレジストパターン形成方法 |
CN102666461B (zh) * | 2009-11-27 | 2015-09-30 | 三菱瓦斯化学株式会社 | 环状化合物、其生产方法、放射线敏感性组合物和抗蚀图案形成方法 |
WO2011070718A1 (ja) * | 2009-12-07 | 2011-06-16 | 三菱瓦斯化学株式会社 | 低分子量ポジ型感放射線性組成物及びレジストパターン形成方法 |
JP2011180579A (ja) * | 2010-02-04 | 2011-09-15 | Sumitomo Chemical Co Ltd | レジスト組成物 |
JPWO2012032790A1 (ja) * | 2010-09-10 | 2014-01-20 | 出光興産株式会社 | 酸解離性溶解抑止基を有する組成物 |
JP2013067612A (ja) | 2011-09-23 | 2013-04-18 | Rohm & Haas Electronic Materials Llc | カリックスアレーン化合物およびこれを含むフォトレジスト組成物 |
JP2013079230A (ja) * | 2011-09-23 | 2013-05-02 | Rohm & Haas Electronic Materials Llc | カリックスアレーンおよびこれを含むフォトレジスト組成物 |
CN102557930B (zh) * | 2012-01-05 | 2014-01-29 | 南京航空航天大学 | 联苯型分子玻璃及其制备方法 |
JP5798964B2 (ja) * | 2012-03-27 | 2015-10-21 | 富士フイルム株式会社 | パターン形成方法、及び、これらを用いる電子デバイスの製造方法 |
GB2501681A (en) * | 2012-04-30 | 2013-11-06 | Ibm | Nanoimprint lithographic methods |
KR102115330B1 (ko) * | 2012-10-17 | 2020-05-26 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 레지스트 조성물 |
US9063420B2 (en) * | 2013-07-16 | 2015-06-23 | Rohm And Haas Electronic Materials Llc | Photoresist composition, coated substrate, and method of forming electronic device |
CN103752208A (zh) * | 2014-01-28 | 2014-04-30 | 扬州大学 | 一种起泡剂和稳泡剂及其合成方法 |
CN108897192B (zh) * | 2018-04-19 | 2022-04-05 | 中科院广州化学有限公司南雄材料生产基地 | 一种巯基-烯纳米压印光刻胶及其使用方法 |
Citations (6)
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JP2003321423A (ja) * | 2002-05-09 | 2003-11-11 | Jsr Corp | カリックスレゾルシンアレーン誘導体および感放射線性樹脂組成物 |
CN1688939A (zh) * | 2002-10-15 | 2005-10-26 | 出光兴产株式会社 | 光致抗蚀剂基材及其精制方法、和光致抗蚀剂组合物 |
EP1734032A1 (en) * | 2004-04-05 | 2006-12-20 | Idemitsu Kosan Co., Ltd. | Calixresorcinarene compounds, photoresist base materials, and compositions thereof |
CN1938259A (zh) * | 2004-04-05 | 2007-03-28 | 出光兴产株式会社 | 间苯二酚杯芳烃化合物、光致抗蚀剂基材及其组合物 |
CN101161639A (zh) * | 2005-10-12 | 2008-04-16 | 三星Sdi株式会社 | 固体酸、包含它的聚合物电解质膜和使用该膜的燃料电池 |
CN101218202A (zh) * | 2005-06-01 | 2008-07-09 | 木下博雄 | 杯间苯二酚芳烃化合物以及由其构成的光致抗蚀剂基材及其组合物 |
Family Cites Families (15)
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US5143784A (en) | 1990-05-10 | 1992-09-01 | Nec Corporation | Soluble calixarene derivative and films thereof |
JP3443466B2 (ja) * | 1993-10-28 | 2003-09-02 | シップレーカンパニー エル エル シー | 感光性樹脂組成物 |
JP3116751B2 (ja) | 1993-12-03 | 2000-12-11 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
JP3486341B2 (ja) | 1997-09-18 | 2004-01-13 | 株式会社東芝 | 感光性組成物およびそれを用いたパターン形成法 |
US6093517A (en) * | 1998-07-31 | 2000-07-25 | International Business Machines Corporation | Calixarenes for use as dissolution inhibitors in lithographic photoresist compositions |
US7037638B1 (en) | 2000-05-31 | 2006-05-02 | International Business Machines Corporation | High sensitivity crosslinkable photoresist composition, based on soluble, film forming dendrimeric calix[4] arene compositions method and for use thereof |
EP1345080A3 (en) | 2002-03-15 | 2004-02-04 | Toyo Gosei Kogyo Co., Ltd. | 1,2-Naphthoquinone-2-Diazidesulfonate Ester photosensitive agent, method for producing the photosensitive agent, and photoresist composition |
US7141692B2 (en) | 2003-11-24 | 2006-11-28 | International Business Machines Corporation | Molecular photoresists containing nonpolymeric silsesquioxanes |
JP4049794B2 (ja) | 2004-02-04 | 2008-02-20 | Jsr株式会社 | カリックスアレーン系化合物、その製造方法、及びその組成物 |
JP5092238B2 (ja) * | 2004-12-24 | 2012-12-05 | 三菱瓦斯化学株式会社 | レジスト用化合物および感放射線性組成物 |
JP4434985B2 (ja) | 2005-02-18 | 2010-03-17 | 信越化学工業株式会社 | レジスト材料並びにこれを用いたパターン形成方法 |
US20070122734A1 (en) | 2005-11-14 | 2007-05-31 | Roberts Jeanette M | Molecular photoresist |
EP1906248A1 (en) | 2006-09-28 | 2008-04-02 | FUJIFILM Corporation | Resist composition and pattern forming method using the same |
JPWO2008136372A1 (ja) * | 2007-04-27 | 2010-07-29 | 出光興産株式会社 | フォトレジスト基材、及びそれを含んでなるフォトレジスト組成物 |
JP5435995B2 (ja) * | 2009-01-30 | 2014-03-05 | 出光興産株式会社 | 環状化合物の製造方法 |
-
2009
- 2009-07-23 US US12/507,968 patent/US7993812B2/en not_active Expired - Fee Related
-
2010
- 2010-07-08 KR KR1020100065657A patent/KR20110010056A/ko not_active Application Discontinuation
- 2010-07-21 JP JP2010163887A patent/JP5385870B2/ja not_active Expired - Fee Related
- 2010-07-23 CN CN2010102378473A patent/CN101963758B/zh not_active Expired - Fee Related
Patent Citations (6)
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JP2003321423A (ja) * | 2002-05-09 | 2003-11-11 | Jsr Corp | カリックスレゾルシンアレーン誘導体および感放射線性樹脂組成物 |
CN1688939A (zh) * | 2002-10-15 | 2005-10-26 | 出光兴产株式会社 | 光致抗蚀剂基材及其精制方法、和光致抗蚀剂组合物 |
EP1734032A1 (en) * | 2004-04-05 | 2006-12-20 | Idemitsu Kosan Co., Ltd. | Calixresorcinarene compounds, photoresist base materials, and compositions thereof |
CN1938259A (zh) * | 2004-04-05 | 2007-03-28 | 出光兴产株式会社 | 间苯二酚杯芳烃化合物、光致抗蚀剂基材及其组合物 |
CN101218202A (zh) * | 2005-06-01 | 2008-07-09 | 木下博雄 | 杯间苯二酚芳烃化合物以及由其构成的光致抗蚀剂基材及其组合物 |
CN101161639A (zh) * | 2005-10-12 | 2008-04-16 | 三星Sdi株式会社 | 固体酸、包含它的聚合物电解质膜和使用该膜的燃料电池 |
Also Published As
Publication number | Publication date |
---|---|
US20110020756A1 (en) | 2011-01-27 |
JP2011028270A (ja) | 2011-02-10 |
US7993812B2 (en) | 2011-08-09 |
JP5385870B2 (ja) | 2014-01-08 |
KR20110010056A (ko) | 2011-01-31 |
CN101963758A (zh) | 2011-02-02 |
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Effective date of registration: 20171127 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171127 Address after: American New York Patentee after: Core USA second LLC Address before: New York grams of Armand Patentee before: International Business Machines Corp. |
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