CN101908551B - 制造光电转换装置的方法 - Google Patents

制造光电转换装置的方法 Download PDF

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Publication number
CN101908551B
CN101908551B CN2010101965206A CN201010196520A CN101908551B CN 101908551 B CN101908551 B CN 101908551B CN 2010101965206 A CN2010101965206 A CN 2010101965206A CN 201010196520 A CN201010196520 A CN 201010196520A CN 101908551 B CN101908551 B CN 101908551B
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China
Prior art keywords
insulating film
semiconductor substrate
dielectric film
gate electrode
etching
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Expired - Fee Related
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CN2010101965206A
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English (en)
Chinese (zh)
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CN101908551A (zh
Inventor
广田克范
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN2010101965206A 2009-06-08 2010-06-03 制造光电转换装置的方法 Expired - Fee Related CN101908551B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009137719A JP5500876B2 (ja) 2009-06-08 2009-06-08 光電変換装置の製造方法
JP2009-137719 2009-06-08

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CN101908551A CN101908551A (zh) 2010-12-08
CN101908551B true CN101908551B (zh) 2012-07-25

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US (2) US7993953B2 (enExample)
JP (1) JP5500876B2 (enExample)
CN (1) CN101908551B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5500876B2 (ja) * 2009-06-08 2014-05-21 キヤノン株式会社 光電変換装置の製造方法
JP2013008782A (ja) * 2011-06-23 2013-01-10 Toshiba Corp 固体撮像装置の製造方法
JP2015109343A (ja) * 2013-12-04 2015-06-11 キヤノン株式会社 半導体装置の製造方法
US10276816B2 (en) * 2014-12-11 2019-04-30 International Business Machines Corporation Illumination sensitive current control device
JP6978893B2 (ja) * 2017-10-27 2021-12-08 キヤノン株式会社 光電変換装置、その製造方法及び機器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1665032A (zh) * 2004-03-02 2005-09-07 松下电器产业株式会社 制造固态成像器件的方法

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JP3061822B2 (ja) 1989-12-09 2000-07-10 日本電気株式会社 固体撮像素子およびその製造方法
JP2928058B2 (ja) * 1993-07-15 1999-07-28 松下電子工業株式会社 固体撮像装置の製造方法
JP3181171B2 (ja) 1994-05-20 2001-07-03 シャープ株式会社 気相成長装置および気相成長方法
JPH0992812A (ja) * 1995-09-21 1997-04-04 Toshiba Corp 半導体装置の製造方法
JP2795241B2 (ja) * 1995-12-18 1998-09-10 日本電気株式会社 固体撮像装置およびその製造方法
JP3624140B2 (ja) * 1999-08-05 2005-03-02 キヤノン株式会社 光電変換装置およびその製造方法、デジタルスチルカメラ又はデジタルビデオカメラ
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JP3760843B2 (ja) * 2001-11-16 2006-03-29 三菱電機株式会社 半導体装置の製造方法
US7800194B2 (en) * 2002-04-23 2010-09-21 Freedman Philip D Thin film photodetector, method and system
JP2005286316A (ja) * 2004-03-02 2005-10-13 Matsushita Electric Ind Co Ltd 固体撮像装置の製造方法
KR100659382B1 (ko) * 2004-08-06 2006-12-19 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP4750391B2 (ja) 2004-08-31 2011-08-17 キヤノン株式会社 固体撮像装置の製造方法
WO2006115142A1 (ja) * 2005-04-22 2006-11-02 Matsushita Electric Industrial Co., Ltd. 固体撮像素子およびその製造方法ならびに光導波路形成装置
JP2007067325A (ja) * 2005-09-02 2007-03-15 Matsushita Electric Ind Co Ltd 固体撮像装置の製造方法
US7323378B2 (en) * 2005-10-20 2008-01-29 Pixart Imaging Inc. Method for fabricating CMOS image sensor
JP4908935B2 (ja) * 2006-06-09 2012-04-04 キヤノン株式会社 光電変換装置及び撮像システム
JP5110820B2 (ja) * 2006-08-02 2012-12-26 キヤノン株式会社 光電変換装置、光電変換装置の製造方法及び撮像システム
JP2009283649A (ja) * 2008-05-22 2009-12-03 Panasonic Corp 固体撮像装置及びその製造方法
JP5274118B2 (ja) * 2008-06-18 2013-08-28 キヤノン株式会社 固体撮像装置
JP5446281B2 (ja) * 2008-08-01 2014-03-19 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
JP5493430B2 (ja) * 2009-03-31 2014-05-14 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5500876B2 (ja) * 2009-06-08 2014-05-21 キヤノン株式会社 光電変換装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1665032A (zh) * 2004-03-02 2005-09-07 松下电器产业株式会社 制造固态成像器件的方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP特开2005-286316A 2005.10.13
JP特开2006-73611A 2006.03.16
JP特开平9-172155A 1997.06.30

Also Published As

Publication number Publication date
US8293560B2 (en) 2012-10-23
JP5500876B2 (ja) 2014-05-21
CN101908551A (zh) 2010-12-08
US20110256660A1 (en) 2011-10-20
US20100311200A1 (en) 2010-12-09
JP2010283306A (ja) 2010-12-16
US7993953B2 (en) 2011-08-09

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