CN101807428B - 存储器电路 - Google Patents

存储器电路 Download PDF

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Publication number
CN101807428B
CN101807428B CN201010115304.4A CN201010115304A CN101807428B CN 101807428 B CN101807428 B CN 101807428B CN 201010115304 A CN201010115304 A CN 201010115304A CN 101807428 B CN101807428 B CN 101807428B
Authority
CN
China
Prior art keywords
row
memory cell
memory
write
memory circuitry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201010115304.4A
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English (en)
Chinese (zh)
Other versions
CN101807428A (zh
Inventor
津村和宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ablic Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of CN101807428A publication Critical patent/CN101807428A/zh
Application granted granted Critical
Publication of CN101807428B publication Critical patent/CN101807428B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/143—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using laser-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
CN201010115304.4A 2009-02-13 2010-02-11 存储器电路 Expired - Fee Related CN101807428B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009031380A JP5208011B2 (ja) 2009-02-13 2009-02-13 メモリ回路装置
JP2009-031380 2009-02-13

Publications (2)

Publication Number Publication Date
CN101807428A CN101807428A (zh) 2010-08-18
CN101807428B true CN101807428B (zh) 2014-04-23

Family

ID=42559793

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010115304.4A Expired - Fee Related CN101807428B (zh) 2009-02-13 2010-02-11 存储器电路

Country Status (5)

Country Link
US (1) US8259516B2 (enExample)
JP (1) JP5208011B2 (enExample)
KR (1) KR101657309B1 (enExample)
CN (1) CN101807428B (enExample)
TW (1) TWI498910B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105244060B (zh) * 2015-09-25 2019-01-01 北京兆易创新科技股份有限公司 一种基于芯片的测试处理方法及装置
JP6390683B2 (ja) * 2016-09-28 2018-09-19 ミツミ電機株式会社 半導体集積回路
JP6932552B2 (ja) 2017-05-31 2021-09-08 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
CN110956993A (zh) * 2019-12-12 2020-04-03 中国科学院微电子研究所 基于电阻分压读取的阻变型存储单元
CN116030871B (zh) * 2023-03-23 2023-06-23 长鑫存储技术有限公司 一种修调电路和存储器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101071641A (zh) * 2006-01-24 2007-11-14 三星电子株式会社 非易失存储装置及其操作方法
US7457178B2 (en) * 2006-01-12 2008-11-25 Sandisk Corporation Trimming of analog voltages in flash memory devices

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63263828A (ja) * 1987-04-21 1988-10-31 Mitsubishi Electric Corp 半導体集積回路
JPH0249297A (ja) * 1988-08-10 1990-02-19 Sharp Corp 記憶装置
JPH0637254A (ja) 1992-07-20 1994-02-10 Fujitsu Ltd 半導体集積回路における基準電圧発生回路
JP3308608B2 (ja) * 1992-10-13 2002-07-29 株式会社日立製作所 信号処理装置および磁気記録再生装置
JP3615009B2 (ja) * 1997-02-12 2005-01-26 株式会社東芝 半導体記憶装置
JPH11306782A (ja) * 1998-04-24 1999-11-05 Sharp Corp 半導体記憶装置
JP2003110029A (ja) * 2001-06-27 2003-04-11 Fuji Electric Co Ltd 半導体装置、そのトリミング方法およびデータ記憶回路
JP2005100538A (ja) * 2003-09-25 2005-04-14 Toshiba Corp 不揮発性半導体記憶装置及びこれを用いた電子装置
JP4698583B2 (ja) * 2004-05-12 2011-06-08 スパンション エルエルシー 半導体装置及びその制御方法
JP2006164408A (ja) * 2004-12-08 2006-06-22 Toshiba Corp 不揮発性半導体記憶装置及びそのデータ消去方法。
JP4825436B2 (ja) * 2005-03-29 2011-11-30 ルネサスエレクトロニクス株式会社 半導体記憶装置及び半導体装置
JP5028967B2 (ja) * 2006-11-15 2012-09-19 富士通セミコンダクター株式会社 半導体記憶装置および半導体記憶装置の制御方法
JP4852004B2 (ja) * 2007-07-26 2012-01-11 セイコーインスツル株式会社 トリミング方法
KR100933852B1 (ko) * 2007-12-28 2009-12-24 주식회사 하이닉스반도체 불휘발성 메모리 소자 및 그 동작 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7457178B2 (en) * 2006-01-12 2008-11-25 Sandisk Corporation Trimming of analog voltages in flash memory devices
CN101071641A (zh) * 2006-01-24 2007-11-14 三星电子株式会社 非易失存储装置及其操作方法

Also Published As

Publication number Publication date
KR101657309B1 (ko) 2016-09-13
US8259516B2 (en) 2012-09-04
US20100208532A1 (en) 2010-08-19
JP2010186525A (ja) 2010-08-26
JP5208011B2 (ja) 2013-06-12
KR20100092899A (ko) 2010-08-23
TWI498910B (zh) 2015-09-01
TW201115584A (en) 2011-05-01
CN101807428A (zh) 2010-08-18

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160323

Address after: Chiba County, Japan

Patentee after: SEIKO INSTR INC

Address before: Chiba County, Japan

Patentee before: Seiko Instruments Inc.

CP01 Change in the name or title of a patent holder

Address after: Chiba County, Japan

Patentee after: EPPs Lingke Co. Ltd.

Address before: Chiba County, Japan

Patentee before: SEIKO INSTR INC

CP01 Change in the name or title of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140423

Termination date: 20210211

CF01 Termination of patent right due to non-payment of annual fee