KR101657309B1 - 메모리 회로 - Google Patents

메모리 회로 Download PDF

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Publication number
KR101657309B1
KR101657309B1 KR1020100012949A KR20100012949A KR101657309B1 KR 101657309 B1 KR101657309 B1 KR 101657309B1 KR 1020100012949 A KR1020100012949 A KR 1020100012949A KR 20100012949 A KR20100012949 A KR 20100012949A KR 101657309 B1 KR101657309 B1 KR 101657309B1
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KR
South Korea
Prior art keywords
memory cell
column
circuit
memory
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020100012949A
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English (en)
Korean (ko)
Other versions
KR20100092899A (ko
Inventor
가즈히로 츠무라
Original Assignee
에스아이아이 세미컨덕터 가부시키가이샤
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Application filed by 에스아이아이 세미컨덕터 가부시키가이샤 filed Critical 에스아이아이 세미컨덕터 가부시키가이샤
Publication of KR20100092899A publication Critical patent/KR20100092899A/ko
Application granted granted Critical
Publication of KR101657309B1 publication Critical patent/KR101657309B1/ko
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/143—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using laser-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
KR1020100012949A 2009-02-13 2010-02-11 메모리 회로 Expired - Fee Related KR101657309B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-031380 2009-02-13
JP2009031380A JP5208011B2 (ja) 2009-02-13 2009-02-13 メモリ回路装置

Publications (2)

Publication Number Publication Date
KR20100092899A KR20100092899A (ko) 2010-08-23
KR101657309B1 true KR101657309B1 (ko) 2016-09-13

Family

ID=42559793

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100012949A Expired - Fee Related KR101657309B1 (ko) 2009-02-13 2010-02-11 메모리 회로

Country Status (5)

Country Link
US (1) US8259516B2 (enExample)
JP (1) JP5208011B2 (enExample)
KR (1) KR101657309B1 (enExample)
CN (1) CN101807428B (enExample)
TW (1) TWI498910B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105244060B (zh) * 2015-09-25 2019-01-01 北京兆易创新科技股份有限公司 一种基于芯片的测试处理方法及装置
JP6390683B2 (ja) * 2016-09-28 2018-09-19 ミツミ電機株式会社 半導体集積回路
JP6932552B2 (ja) 2017-05-31 2021-09-08 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
CN110956993A (zh) * 2019-12-12 2020-04-03 中国科学院微电子研究所 基于电阻分压读取的阻变型存储单元
CN116030871B (zh) * 2023-03-23 2023-06-23 长鑫存储技术有限公司 一种修调电路和存储器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060133155A1 (en) * 2004-12-08 2006-06-22 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and a method of erasing data thereof
US20070159891A1 (en) * 2006-01-12 2007-07-12 Loc Tu Trimming of analog voltages in flash memory devices
US20080114949A1 (en) * 2006-11-15 2008-05-15 Fujitsu Limited Method for controlling semiconductor memory device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63263828A (ja) * 1987-04-21 1988-10-31 Mitsubishi Electric Corp 半導体集積回路
JPH0249297A (ja) * 1988-08-10 1990-02-19 Sharp Corp 記憶装置
JPH0637254A (ja) 1992-07-20 1994-02-10 Fujitsu Ltd 半導体集積回路における基準電圧発生回路
JP3308608B2 (ja) * 1992-10-13 2002-07-29 株式会社日立製作所 信号処理装置および磁気記録再生装置
JP3615009B2 (ja) * 1997-02-12 2005-01-26 株式会社東芝 半導体記憶装置
JPH11306782A (ja) * 1998-04-24 1999-11-05 Sharp Corp 半導体記憶装置
JP2003110029A (ja) * 2001-06-27 2003-04-11 Fuji Electric Co Ltd 半導体装置、そのトリミング方法およびデータ記憶回路
JP2005100538A (ja) * 2003-09-25 2005-04-14 Toshiba Corp 不揮発性半導体記憶装置及びこれを用いた電子装置
JP4698583B2 (ja) * 2004-05-12 2011-06-08 スパンション エルエルシー 半導体装置及びその制御方法
JP4825436B2 (ja) * 2005-03-29 2011-11-30 ルネサスエレクトロニクス株式会社 半導体記憶装置及び半導体装置
KR100684909B1 (ko) * 2006-01-24 2007-02-22 삼성전자주식회사 읽기 에러를 방지할 수 있는 플래시 메모리 장치
JP4852004B2 (ja) * 2007-07-26 2012-01-11 セイコーインスツル株式会社 トリミング方法
KR100933852B1 (ko) * 2007-12-28 2009-12-24 주식회사 하이닉스반도체 불휘발성 메모리 소자 및 그 동작 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060133155A1 (en) * 2004-12-08 2006-06-22 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and a method of erasing data thereof
US20070159891A1 (en) * 2006-01-12 2007-07-12 Loc Tu Trimming of analog voltages in flash memory devices
US20080114949A1 (en) * 2006-11-15 2008-05-15 Fujitsu Limited Method for controlling semiconductor memory device

Also Published As

Publication number Publication date
US8259516B2 (en) 2012-09-04
US20100208532A1 (en) 2010-08-19
JP2010186525A (ja) 2010-08-26
JP5208011B2 (ja) 2013-06-12
KR20100092899A (ko) 2010-08-23
TWI498910B (zh) 2015-09-01
CN101807428B (zh) 2014-04-23
TW201115584A (en) 2011-05-01
CN101807428A (zh) 2010-08-18

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