CN101779286B - 半导体器件的应力消减 - Google Patents

半导体器件的应力消减 Download PDF

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Publication number
CN101779286B
CN101779286B CN2008801023319A CN200880102331A CN101779286B CN 101779286 B CN101779286 B CN 101779286B CN 2008801023319 A CN2008801023319 A CN 2008801023319A CN 200880102331 A CN200880102331 A CN 200880102331A CN 101779286 B CN101779286 B CN 101779286B
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China
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distance
fracture
layer
die
tube core
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Expired - Fee Related
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CN2008801023319A
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English (en)
Chinese (zh)
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CN101779286A (zh
Inventor
N·D·沃
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN101779286A publication Critical patent/CN101779286A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Dicing (AREA)
CN2008801023319A 2007-08-08 2008-06-24 半导体器件的应力消减 Expired - Fee Related CN101779286B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/835,680 US7960814B2 (en) 2007-08-08 2007-08-08 Stress relief of a semiconductor device
US11/835,680 2007-08-08
PCT/US2008/068023 WO2009020713A1 (en) 2007-08-08 2008-06-24 Stress relief of a semiconductor device

Publications (2)

Publication Number Publication Date
CN101779286A CN101779286A (zh) 2010-07-14
CN101779286B true CN101779286B (zh) 2012-01-11

Family

ID=40341625

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801023319A Expired - Fee Related CN101779286B (zh) 2007-08-08 2008-06-24 半导体器件的应力消减

Country Status (6)

Country Link
US (1) US7960814B2 (enExample)
JP (1) JP5341087B2 (enExample)
KR (1) KR101462063B1 (enExample)
CN (1) CN101779286B (enExample)
TW (1) TWI433222B (enExample)
WO (1) WO2009020713A1 (enExample)

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US8013425B2 (en) 2008-05-13 2011-09-06 United Microelectronics Corp. Scribe line structure for wafer dicing and method of making the same
US8912076B2 (en) * 2008-11-05 2014-12-16 Texas Instruments Incorporated Crack deflector structure for improving semiconductor device robustness against saw-induced damage
US8125053B2 (en) * 2009-02-04 2012-02-28 Texas Instruments Incorporated Embedded scribe lane crack arrest structure for improved IC package reliability of plastic flip chip devices
US8124448B2 (en) 2009-09-18 2012-02-28 Advanced Micro Devices, Inc. Semiconductor chip with crack deflection structure
DE102010029528A1 (de) * 2010-05-31 2011-12-01 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Halbleiterbauelement mit einer Chipumrandung mit gradueller Strukturdichte
US8692392B2 (en) * 2010-10-05 2014-04-08 Infineon Technologies Ag Crack stop barrier and method of manufacturing thereof
US20120286397A1 (en) * 2011-05-13 2012-11-15 Globalfoundries Inc. Die Seal for Integrated Circuit Device
US8940618B2 (en) * 2012-03-13 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method and device for cutting semiconductor wafers
KR101984736B1 (ko) * 2012-10-09 2019-06-03 삼성디스플레이 주식회사 플렉서블 디스플레이 장치용 어레이 기판
US8896102B2 (en) * 2013-01-22 2014-11-25 Freescale Semiconductor, Inc. Die edge sealing structures and related fabrication methods
US20140342471A1 (en) * 2013-05-20 2014-11-20 Varian Semiconductor Equipment Associates, Inc. Variable Doping Of Solar Cells
TWI467757B (zh) * 2013-08-02 2015-01-01 Chipbond Technology Corp 半導體結構
CN106464162B (zh) 2014-06-20 2019-02-19 通用电气公司 用于对多逆变器功率变换器的控制的装置及方法
US20160268166A1 (en) * 2015-03-12 2016-09-15 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing the same
KR102611982B1 (ko) 2016-05-25 2023-12-08 삼성전자주식회사 반도체 장치
KR102633112B1 (ko) 2016-08-05 2024-02-06 삼성전자주식회사 반도체 소자
CN109950208A (zh) * 2017-12-21 2019-06-28 成都海存艾匹科技有限公司 适合划片且能避免裂痕的半导体晶粒
KR102599050B1 (ko) * 2018-08-20 2023-11-06 삼성전자주식회사 반도체 칩의 제조 방법
JP7443097B2 (ja) 2020-03-09 2024-03-05 キオクシア株式会社 半導体ウェハおよび半導体チップ
US11652069B2 (en) * 2020-12-08 2023-05-16 Globalfoundries Singapore Pte. Ltd. Crackstop structures
US20230290684A1 (en) * 2022-03-09 2023-09-14 Micron Technology, Inc. Structures and methods for dicing semiconductor devices
DE102022128335A1 (de) 2022-10-26 2024-05-02 Infineon Technologies Ag Chip mit Rissleitstruktur kombiniert mit Rissstoppstruktur
CN115376905B (zh) * 2022-10-27 2023-01-31 山东中清智能科技股份有限公司 一种半导体晶片的切割工艺
CN116314041A (zh) * 2023-05-24 2023-06-23 深圳和美精艺半导体科技股份有限公司 承载基板、应用其的封装结构及封装元件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5858882A (en) * 1997-03-24 1999-01-12 Vanguard International Semiconductor Corporation In-situ low wafer temperature oxidized gas plasma surface treatment process
CN1234909A (zh) * 1996-11-21 1999-11-10 株式会社日立制作所 半导体器件及其制造方法
US6709954B1 (en) * 2002-06-21 2004-03-23 Advanced Micro Devices, Inc. Scribe seal structure and method of manufacture
TW200629505A (en) * 2004-06-30 2006-08-16 Freescale Semiconductor Inc Scribe street structure for backend interconnect semiconductor wafer integration

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4922326A (en) 1988-07-18 1990-05-01 Motorola, Inc. Ceramic semiconductor package having crack arrestor patterns
US4976814A (en) 1988-07-18 1990-12-11 Motorola, Inc. Method of making a ceramic semiconductor package having crack arrestor patterns
US6972209B2 (en) 2002-11-27 2005-12-06 International Business Machines Corporation Stacked via-stud with improved reliability in copper metallurgy
US7098676B2 (en) 2003-01-08 2006-08-29 International Business Machines Corporation Multi-functional structure for enhanced chip manufacturibility and reliability for low k dielectrics semiconductors and a crackstop integrity screen and monitor
US7126225B2 (en) 2003-04-15 2006-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for manufacturing a semiconductor wafer with reduced delamination and peeling
US20050026397A1 (en) 2003-07-28 2005-02-03 International Business Machines Corporation Crack stop for low k dielectrics
US7180187B2 (en) 2004-06-22 2007-02-20 International Business Machines Corporation Interlayer connector for preventing delamination of semiconductor device
US7223673B2 (en) 2004-07-15 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device with crack prevention ring
JP4636839B2 (ja) * 2004-09-24 2011-02-23 パナソニック株式会社 電子デバイス
US7211500B2 (en) * 2004-09-27 2007-05-01 United Microelectronics Corp. Pre-process before cutting a wafer and method of cutting a wafer
JP2008066716A (ja) * 2006-08-10 2008-03-21 Matsushita Electric Ind Co Ltd 半導体装置
JP5175066B2 (ja) * 2006-09-15 2013-04-03 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1234909A (zh) * 1996-11-21 1999-11-10 株式会社日立制作所 半导体器件及其制造方法
US5858882A (en) * 1997-03-24 1999-01-12 Vanguard International Semiconductor Corporation In-situ low wafer temperature oxidized gas plasma surface treatment process
US6709954B1 (en) * 2002-06-21 2004-03-23 Advanced Micro Devices, Inc. Scribe seal structure and method of manufacture
TW200629505A (en) * 2004-06-30 2006-08-16 Freescale Semiconductor Inc Scribe street structure for backend interconnect semiconductor wafer integration

Also Published As

Publication number Publication date
CN101779286A (zh) 2010-07-14
KR20100050489A (ko) 2010-05-13
JP5341087B2 (ja) 2013-11-13
WO2009020713A1 (en) 2009-02-12
TWI433222B (zh) 2014-04-01
JP2010536174A (ja) 2010-11-25
US20090039470A1 (en) 2009-02-12
TW200913041A (en) 2009-03-16
KR101462063B1 (ko) 2014-11-17
US7960814B2 (en) 2011-06-14

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GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Texas in the United States

Patentee after: NXP USA, Inc.

Address before: Texas in the United States

Patentee before: FREESCALE SEMICONDUCTOR, Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120111