CN101730864B - 间隔件微影蚀刻 - Google Patents

间隔件微影蚀刻 Download PDF

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Publication number
CN101730864B
CN101730864B CN2008800237522A CN200880023752A CN101730864B CN 101730864 B CN101730864 B CN 101730864B CN 2008800237522 A CN2008800237522 A CN 2008800237522A CN 200880023752 A CN200880023752 A CN 200880023752A CN 101730864 B CN101730864 B CN 101730864B
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CN
China
Prior art keywords
cross
layer
acid
shielding pattern
forming
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CN2008800237522A
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English (en)
Chinese (zh)
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CN101730864A (zh
Inventor
R-H·金
Y·邓
T·I·瓦洛
B·拉方丹
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Publication of CN101730864A publication Critical patent/CN101730864A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2008800237522A 2007-07-10 2008-07-10 间隔件微影蚀刻 Active CN101730864B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/775,727 US8642474B2 (en) 2007-07-10 2007-07-10 Spacer lithography
US11/775,727 2007-07-10
PCT/US2008/008470 WO2009009095A1 (en) 2007-07-10 2008-07-10 Spacer lithography

Publications (2)

Publication Number Publication Date
CN101730864A CN101730864A (zh) 2010-06-09
CN101730864B true CN101730864B (zh) 2012-07-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800237522A Active CN101730864B (zh) 2007-07-10 2008-07-10 间隔件微影蚀刻

Country Status (7)

Country Link
US (1) US8642474B2 (enExample)
EP (1) EP2168008B1 (enExample)
JP (1) JP5120983B2 (enExample)
KR (1) KR101520440B1 (enExample)
CN (1) CN101730864B (enExample)
TW (1) TWI431665B (enExample)
WO (1) WO2009009095A1 (enExample)

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US9257439B2 (en) 2014-02-27 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET SRAM
CN110391133B (zh) * 2018-04-17 2021-07-20 联华电子股份有限公司 图案化方法
US11069692B2 (en) 2018-07-31 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET SRAM cells with dielectric fins
US11437385B2 (en) 2018-09-24 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET SRAM cells with reduced fin pitch

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Also Published As

Publication number Publication date
TW200915389A (en) 2009-04-01
JP2010534346A (ja) 2010-11-04
KR20100057799A (ko) 2010-06-01
WO2009009095A1 (en) 2009-01-15
EP2168008A1 (en) 2010-03-31
EP2168008B1 (en) 2014-11-26
KR101520440B1 (ko) 2015-05-15
US20090017628A1 (en) 2009-01-15
US8642474B2 (en) 2014-02-04
TWI431665B (zh) 2014-03-21
JP5120983B2 (ja) 2013-01-16
CN101730864A (zh) 2010-06-09

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