KR101520440B1 - 스페이서 리쏘그래피 - Google Patents

스페이서 리쏘그래피 Download PDF

Info

Publication number
KR101520440B1
KR101520440B1 KR1020107002932A KR20107002932A KR101520440B1 KR 101520440 B1 KR101520440 B1 KR 101520440B1 KR 1020107002932 A KR1020107002932 A KR 1020107002932A KR 20107002932 A KR20107002932 A KR 20107002932A KR 101520440 B1 KR101520440 B1 KR 101520440B1
Authority
KR
South Korea
Prior art keywords
cross
mask pattern
layer
acid
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020107002932A
Other languages
English (en)
Korean (ko)
Other versions
KR20100057799A (ko
Inventor
령 한 김
윤페이 등
토마스 아이. 왈로우
폰타인 브루노 라
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어드밴스드 마이크로 디바이시즈, 인코포레이티드 filed Critical 어드밴스드 마이크로 디바이시즈, 인코포레이티드
Publication of KR20100057799A publication Critical patent/KR20100057799A/ko
Application granted granted Critical
Publication of KR101520440B1 publication Critical patent/KR101520440B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020107002932A 2007-07-10 2008-07-10 스페이서 리쏘그래피 Active KR101520440B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/775,727 US8642474B2 (en) 2007-07-10 2007-07-10 Spacer lithography
US11/775,727 2007-07-10
PCT/US2008/008470 WO2009009095A1 (en) 2007-07-10 2008-07-10 Spacer lithography

Publications (2)

Publication Number Publication Date
KR20100057799A KR20100057799A (ko) 2010-06-01
KR101520440B1 true KR101520440B1 (ko) 2015-05-15

Family

ID=39765015

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107002932A Active KR101520440B1 (ko) 2007-07-10 2008-07-10 스페이서 리쏘그래피

Country Status (7)

Country Link
US (1) US8642474B2 (enExample)
EP (1) EP2168008B1 (enExample)
JP (1) JP5120983B2 (enExample)
KR (1) KR101520440B1 (enExample)
CN (1) CN101730864B (enExample)
TW (1) TWI431665B (enExample)
WO (1) WO2009009095A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2287667B1 (en) * 2009-06-26 2013-03-27 Rohm and Haas Electronic Materials, L.L.C. Self-aligned spacer multiple patterning methods
EP2287669A1 (en) * 2009-06-26 2011-02-23 Rohm and Haas Electronic Materials, L.L.C. Methods of forming electronic devices
TWI442453B (zh) * 2009-11-19 2014-06-21 羅門哈斯電子材料有限公司 形成電子裝置之方法
US8815747B2 (en) * 2010-06-03 2014-08-26 Micron Technology, Inc. Methods of forming patterns on substrates
US9233840B2 (en) * 2010-10-28 2016-01-12 International Business Machines Corporation Method for improving self-assembled polymer features
US9330914B2 (en) 2013-10-08 2016-05-03 Micron Technology, Inc. Methods of forming line patterns in substrates
JP6126570B2 (ja) * 2013-12-13 2017-05-10 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法
US9257439B2 (en) 2014-02-27 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET SRAM
CN110391133B (zh) * 2018-04-17 2021-07-20 联华电子股份有限公司 图案化方法
US11069692B2 (en) 2018-07-31 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET SRAM cells with dielectric fins
US11437385B2 (en) 2018-09-24 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET SRAM cells with reduced fin pitch

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3242113A1 (de) * 1982-11-13 1984-05-24 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur herstellung einer duennen dielektrischen isolation in einem siliciumhalbleiterkoerper
JPS62199068A (ja) * 1986-02-27 1987-09-02 Toshiba Corp 半導体装置及びその製造方法
DE3682395D1 (de) * 1986-03-27 1991-12-12 Ibm Verfahren zur herstellung von seitenstrukturen.
US5322764A (en) * 1991-05-21 1994-06-21 Mitsubishi Denki Kabushiki Kaisha Method for forming a patterned resist
US5654202A (en) * 1992-03-24 1997-08-05 Eastman Kodak Company Stabilization of a patterned planarizing layer for solid state imagers prior to color filter pattern formation
US5618383A (en) * 1994-03-30 1997-04-08 Texas Instruments Incorporated Narrow lateral dimensioned microelectronic structures and method of forming the same
JP3317582B2 (ja) * 1994-06-01 2002-08-26 菱電セミコンダクタシステムエンジニアリング株式会社 微細パターンの形成方法
JPH08152716A (ja) * 1994-11-28 1996-06-11 Mitsubishi Electric Corp ネガ型レジスト及びレジストパターンの形成方法
JPH08321613A (ja) * 1995-05-26 1996-12-03 Ricoh Co Ltd 半導体装置の製造方法
US5795830A (en) * 1995-06-06 1998-08-18 International Business Machines Corporation Reducing pitch with continuously adjustable line and space dimensions
US5879955A (en) * 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
TW329539B (en) * 1996-07-05 1998-04-11 Mitsubishi Electric Corp The semiconductor device and its manufacturing method
TW353775B (en) * 1996-11-27 1999-03-01 Tokyo Electron Ltd Production of semiconductor device
TW372337B (en) * 1997-03-31 1999-10-21 Mitsubishi Electric Corp Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus
TW383416B (en) * 1997-06-26 2000-03-01 Matsushita Electric Industrial Co Ltd Pattern forming method
US6063688A (en) * 1997-09-29 2000-05-16 Intel Corporation Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition
JP3189773B2 (ja) * 1998-01-09 2001-07-16 三菱電機株式会社 レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置
US6331378B1 (en) * 1998-02-25 2001-12-18 Matsushita Electric Industrial Co., Ltd. Pattern forming method
US6183938B1 (en) * 1998-12-08 2001-02-06 Advanced Micro Devices, Inc. Conformal organic coatings for sidewall patterning of sublithographic structures
US6291137B1 (en) * 1999-01-20 2001-09-18 Advanced Micro Devices, Inc. Sidewall formation for sidewall patterning of sub 100 nm structures
US6335531B1 (en) * 1999-04-06 2002-01-01 Micron Technology, Inc. Modification of resist and/or resist processing with fluorescence detection
JP3950584B2 (ja) * 1999-06-29 2007-08-01 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物
JP2001066782A (ja) * 1999-08-26 2001-03-16 Mitsubishi Electric Corp 半導体装置の製造方法並びに半導体装置
JP2001100428A (ja) * 1999-09-27 2001-04-13 Mitsubishi Electric Corp 半導体装置の製造方法、微細パターン形成用薬液および半導体装置
US6239008B1 (en) * 1999-09-29 2001-05-29 Advanced Micro Devices, Inc. Method of making a density multiplier for semiconductor device manufacturing
US6362057B1 (en) * 1999-10-26 2002-03-26 Motorola, Inc. Method for forming a semiconductor device
JP2001284813A (ja) * 2000-03-31 2001-10-12 Mitsubishi Electric Corp 多層配線板の製造方法
JP3343341B2 (ja) * 2000-04-28 2002-11-11 ティーディーケイ株式会社 微細パターン形成方法及びそれに用いる現像／洗浄装置、及びそれを用いためっき方法、及びそれを用いた薄膜磁気ヘッドの製造方法
US6492075B1 (en) * 2000-06-16 2002-12-10 Advanced Micro Devices, Inc. Chemical trim process
US6534243B1 (en) * 2000-10-23 2003-03-18 Advanced Micro Devices, Inc. Chemical feature doubling process
US6383952B1 (en) 2001-02-28 2002-05-07 Advanced Micro Devices, Inc. RELACS process to double the frequency or pitch of small feature formation
JP3633595B2 (ja) * 2001-08-10 2005-03-30 富士通株式会社 レジストパターン膨潤化材料およびそれを用いた微小パターンの形成方法および半導体装置の製造方法
US7189783B2 (en) * 2001-11-27 2007-03-13 Fujitsu Limited Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof
US6638441B2 (en) * 2002-01-07 2003-10-28 Macronix International Co., Ltd. Method for pitch reduction
US6862798B2 (en) * 2002-01-18 2005-03-08 Hitachi Global Storage Technologies Netherlands B.V. Method of making a narrow pole tip by ion beam deposition
JP3953822B2 (ja) * 2002-01-25 2007-08-08 富士通株式会社 レジストパターン薄肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
JP2004056000A (ja) * 2002-07-23 2004-02-19 Renesas Technology Corp レジストパターン形成方法およびその方法を用いた半導体デバイスの製造方法
JP3850767B2 (ja) * 2002-07-25 2006-11-29 富士通株式会社 レジストパターン厚肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
US6566280B1 (en) * 2002-08-26 2003-05-20 Intel Corporation Forming polymer features on a substrate
KR100493029B1 (ko) * 2002-10-26 2005-06-07 삼성전자주식회사 반도체 소자의 미세 패턴 형성방법
JP4191506B2 (ja) * 2003-02-21 2008-12-03 Ｔｄｋ株式会社 高密度インダクタおよびその製造方法
US6905975B2 (en) * 2003-07-03 2005-06-14 Micron Technology, Inc. Methods of forming patterned compositions
JP3774713B2 (ja) * 2003-10-15 2006-05-17 株式会社東芝 コンタクトホールの形成方法
JP4143023B2 (ja) * 2003-11-21 2008-09-03 株式会社東芝 パターン形成方法および半導体装置の製造方法
US7498225B1 (en) * 2003-12-04 2009-03-03 Advanced Micro Devices, Inc. Systems and methods for forming multiple fin structures using metal-induced-crystallization
US7314691B2 (en) * 2004-04-08 2008-01-01 Samsung Electronics Co., Ltd. Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating composition for fine pattern formation, and method of fabricating semiconductor device
JP4490228B2 (ja) * 2004-06-15 2010-06-23 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
US7655387B2 (en) * 2004-09-02 2010-02-02 Micron Technology, Inc. Method to align mask patterns
JP4302065B2 (ja) * 2005-01-31 2009-07-22 株式会社東芝 パターン形成方法
JP4676325B2 (ja) * 2005-02-18 2011-04-27 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
GB2423634A (en) * 2005-02-25 2006-08-30 Seiko Epson Corp A patterning method for manufacturing high resolution structures
US7429536B2 (en) * 2005-05-23 2008-09-30 Micron Technology, Inc. Methods for forming arrays of small, closely spaced features
US7396781B2 (en) * 2005-06-09 2008-07-08 Micron Technology, Inc. Method and apparatus for adjusting feature size and position
GB2429332A (en) * 2005-08-18 2007-02-21 Filtronic Compound Semiconduct A method of producing a trench with a coating of a cross linked polymer
US8153350B2 (en) * 2005-08-24 2012-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method and material for forming high etch resistant double exposure patterns
JP4566862B2 (ja) * 2005-08-25 2010-10-20 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
JP5177948B2 (ja) * 2005-10-11 2013-04-10 東京エレクトロン株式会社 レジスト膜の除去方法およびコンピュータ読取可能な記憶媒体
JP2007140151A (ja) * 2005-11-18 2007-06-07 Renesas Technology Corp 微細パターン形成用材料、微細パターン形成方法、それを用いた電子デバイスの製造方法、およびそれにより製造された電子デバイス
JP4719069B2 (ja) * 2006-04-21 2011-07-06 パナソニック株式会社 レジスト材料及びそれを用いたパターン形成方法
US7488685B2 (en) * 2006-04-25 2009-02-10 Micron Technology, Inc. Process for improving critical dimension uniformity of integrated circuit arrays
US7790357B2 (en) * 2006-09-12 2010-09-07 Hynix Semiconductor Inc. Method of forming fine pattern of semiconductor device
US7959818B2 (en) * 2006-09-12 2011-06-14 Hynix Semiconductor Inc. Method for forming a fine pattern of a semiconductor device

Also Published As

Publication number Publication date
TW200915389A (en) 2009-04-01
JP2010534346A (ja) 2010-11-04
KR20100057799A (ko) 2010-06-01
WO2009009095A1 (en) 2009-01-15
EP2168008A1 (en) 2010-03-31
EP2168008B1 (en) 2014-11-26
US20090017628A1 (en) 2009-01-15
US8642474B2 (en) 2014-02-04
TWI431665B (zh) 2014-03-21
CN101730864B (zh) 2012-07-18
JP5120983B2 (ja) 2013-01-16
CN101730864A (zh) 2010-06-09

Similar Documents

Publication Publication Date Title
KR101520440B1 (ko) 스페이서 리쏘그래피
CN106226998B (zh) 光刻方法
US7799508B2 (en) Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same
CN106324998B (zh) 光刻图形的形成方法
US20110244403A1 (en) Method of slimming radiation-sensitive material lines in lithographic applications
KR20160063318A (ko) Beol 패턴 커팅 및 플러깅을 위한 노출 활성화된 화학적으로 증폭된 dsa
US20100183982A1 (en) Method of manufacturing a semiconductor device
US7550248B2 (en) Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same
CN103280403B (zh) 双栅氧器件的制造方法
US6905949B2 (en) Semiconductor apparatus fabrication method forming a resist pattern, a film over the resist, and reflowing the resist
JP3904329B2 (ja) 半導体装置の製造方法
JP2011099903A (ja) レジストパターン厚肉化材料、並びに、半導体装置及びその製造方法
WO2015035088A1 (en) Methods and apparatus for forming a resist array using chemical mechanical planarization
CN108962728B (zh) 集成电路的制造方法
JP4413880B2 (ja) 半導体装置の製造方法
US6989333B2 (en) Process for forming a pattern
CN109545666A (zh) 半导体结构的形成方法
US20100119982A1 (en) Etching method and manufacturing method of semiconductor device
KR20060083507A (ko) 반도체기판의 패턴 형성방법 및 이를 이용한 반도체기판의패턴 형성장치
WO2006021927A1 (en) Hot source cleaning system
CN1215376C (zh) 高温热流光刻制造方法和提供其工艺裕度的方法
KR20020066373A (ko) 레지스트 패턴 형성 방법 및 미세 패턴 형성 방법
JP2004191833A (ja) 半導体装置の製造方法
TWI625786B (zh) Semiconductor device manufacturing method and semiconductor manufacturing device
JP2014229845A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20180417

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20190417

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000