JP2010534346A - スペーサリソグラフィ - Google Patents
スペーサリソグラフィ Download PDFInfo
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- JP2010534346A JP2010534346A JP2010516054A JP2010516054A JP2010534346A JP 2010534346 A JP2010534346 A JP 2010534346A JP 2010516054 A JP2010516054 A JP 2010516054A JP 2010516054 A JP2010516054 A JP 2010516054A JP 2010534346 A JP2010534346 A JP 2010534346A
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- 125000006850 spacer group Chemical group 0.000 title claims abstract description 44
- 238000001459 lithography Methods 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000002253 acid Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000004132 cross linking Methods 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000011368 organic material Substances 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 150000003839 salts Chemical class 0.000 claims description 4
- LUMIAJYHNYFZLD-UHFFFAOYSA-N 4-(chloromethyl)triazine Chemical compound ClCC1=CC=NN=N1 LUMIAJYHNYFZLD-UHFFFAOYSA-N 0.000 claims description 3
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 claims description 3
- 229920003986 novolac Polymers 0.000 claims description 3
- 239000003504 photosensitizing agent Substances 0.000 claims description 3
- 239000004971 Cross linker Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 51
- 238000013461 design Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 7
- -1 polyvinylamine Polymers 0.000 description 6
- 239000003431 cross linking reagent Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229920002554 vinyl polymer Polymers 0.000 description 4
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 3
- 150000001241 acetals Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- ONTAEZSXZGCILH-UHFFFAOYSA-N [(4,6-diamino-1,3,5-triazin-2-yl)-methoxyamino]methanol Chemical compound CON(CO)C1=NC(N)=NC(N)=N1 ONTAEZSXZGCILH-UHFFFAOYSA-N 0.000 description 2
- 239000011354 acetal resin Substances 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 2
- 150000007974 melamines Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000083 poly(allylamine) Polymers 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 150000003672 ureas Chemical class 0.000 description 2
- YXIJVUMGHSCKIO-UHFFFAOYSA-N 1-(hydroxymethyl)-1-methoxyurea Chemical compound CON(CO)C(N)=O YXIJVUMGHSCKIO-UHFFFAOYSA-N 0.000 description 1
- 125000003504 2-oxazolinyl group Chemical group O1C(=NCC1)* 0.000 description 1
- PYSRRFNXTXNWCD-UHFFFAOYSA-N 3-(2-phenylethenyl)furan-2,5-dione Chemical compound O=C1OC(=O)C(C=CC=2C=CC=CC=2)=C1 PYSRRFNXTXNWCD-UHFFFAOYSA-N 0.000 description 1
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 229920000147 Styrene maleic anhydride Polymers 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- MBHRHUJRKGNOKX-UHFFFAOYSA-N [(4,6-diamino-1,3,5-triazin-2-yl)amino]methanol Chemical class NC1=NC(N)=NC(NCO)=N1 MBHRHUJRKGNOKX-UHFFFAOYSA-N 0.000 description 1
- 238000006359 acetalization reaction Methods 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- GJRKKTVFRGJAFQ-UHFFFAOYSA-N prop-2-en-1-ol;urea Chemical class NC(N)=O.OCC=C GJRKKTVFRGJAFQ-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (10)
- 標的層(11)の上に第1のマスクパターン(10)を形成するステップと、
前記第1のマスクパターン(10)の上に架橋可能層(20)を形成するステップと、
前記第1のマスクパターン(10)と前記架橋可能層(20)との間に架橋スペーサ(30,31)を形成するステップと、
前記架橋可能層(20)、前記第1のマスク層(10)を露出させるのに十分な前記架橋スペーサ(30)の一部、および前記第1のマスク層(10)を除去して、前記架橋スペーサ(31)の残りの部分を含む第2のマスクパターンを形成するステップとを含む、半導体デバイスの製造方法。 - 前記架橋可能層(20)は、酸の存在下で架橋反応を受けうる材料を含む、請求項1に記載の方法。
- 前記第1のマスクパターン(10)は酸を発生可能な材料を含む、請求項2に記載の方法。
- 前記架橋可能層(20)の形成後に、照射または加熱によって、前記第1のマスクパターン(10)内で酸を発生させるステップと、加熱して前記架橋可能材料(20)のほうに酸を拡散させ、前記架橋スペーサ(30,31)を形成するステップとを含む、請求項3に記載の方法。
- 前記第1のマスクパターン(10)を露出させるのに十分な、前記架橋可能層(20)の一部と架橋スペーサ(30)とを除去し、
その後、前記架橋可能層(20)の残りの部分と前記第1のマスクパターン(10)とを除去することによって第2のマスクパターンを形成するステップを含む、請求項1に記載の方法。 - 標的層(11)の上に、第1の有機物質を含む第1のマスクパターン(10)を形成するステップと、
酸の存在下で架橋反応を受けうる第2の有機物質を含む層(20)を形成するステップと、
酸を発生させて、前記第2の有機物質(20)に拡散させ、前記第2の有機物質の一部を架橋させ、前記第1のマスクパターン(10)上に架橋スペーサ(30,31)を形成するステップと、
前記第1のマスクパターン(10)を露出させるのに十分なだけ前記第2の有機物質(20)と前記架橋スペーサ(30)の一部を除去するエッチングを行うステップと、
前記第2の有機物質(20)の残りの部分と前記第1のマスクパターン(10)とを除去するエッチングを行い、前記架橋スペーサ(31)の残りの部分を含む第2のマスクパターンを形成するステップとを含む、半導体デバイスの製造方法。 - 前記第1の有機物質(10)は酸を発生可能であり、前記方法は、
前記第1の有機物質(10)を加熱または前記第1の有機物質(10)に照射することによって前記酸を発生させるステップと、
加熱して前記酸を拡散させるステップとを含む、請求項6に記載の方法。 - 前記第1の有機物質は、ノボラック樹脂、ナフトキノンジアジド系の感光剤およびクロロメチルトリアジン酸発生剤、またはポリヒドロキシスチレン誘導体またはオニウム塩を含む、請求項7に記載の方法。
- 前記第2の有機物質(20)は水溶性樹脂である、請求項8に記載の方法。
- 前記第1のマスクパターン(10)を酸溶液で処理することによって前記酸を発生させるステップを含む、請求項6に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/775,727 | 2007-07-10 | ||
US11/775,727 US8642474B2 (en) | 2007-07-10 | 2007-07-10 | Spacer lithography |
PCT/US2008/008470 WO2009009095A1 (en) | 2007-07-10 | 2008-07-10 | Spacer lithography |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010534346A true JP2010534346A (ja) | 2010-11-04 |
JP2010534346A5 JP2010534346A5 (ja) | 2011-08-25 |
JP5120983B2 JP5120983B2 (ja) | 2013-01-16 |
Family
ID=39765015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010516054A Active JP5120983B2 (ja) | 2007-07-10 | 2008-07-10 | スペーサリソグラフィ |
Country Status (7)
Country | Link |
---|---|
US (1) | US8642474B2 (ja) |
EP (1) | EP2168008B1 (ja) |
JP (1) | JP5120983B2 (ja) |
KR (1) | KR101520440B1 (ja) |
CN (1) | CN101730864B (ja) |
TW (1) | TWI431665B (ja) |
WO (1) | WO2009009095A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011071480A (ja) * | 2009-06-26 | 2011-04-07 | Rohm & Haas Electronic Materials Llc | 電子デバイスを形成する方法 |
JP2011109059A (ja) * | 2009-11-19 | 2011-06-02 | Rohm & Haas Electronic Materials Llc | 電子デバイスを形成する方法 |
WO2015087689A1 (ja) * | 2013-12-13 | 2015-06-18 | 富士フイルム株式会社 | パターン形成方法、電子デバイスの製造方法 |
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CN101963755B (zh) * | 2009-06-26 | 2012-12-19 | 罗门哈斯电子材料有限公司 | 自对准间隔物多重图形化方法 |
US8815747B2 (en) | 2010-06-03 | 2014-08-26 | Micron Technology, Inc. | Methods of forming patterns on substrates |
US9233840B2 (en) * | 2010-10-28 | 2016-01-12 | International Business Machines Corporation | Method for improving self-assembled polymer features |
US9330914B2 (en) | 2013-10-08 | 2016-05-03 | Micron Technology, Inc. | Methods of forming line patterns in substrates |
US9257439B2 (en) | 2014-02-27 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for FinFET SRAM |
CN110391133B (zh) * | 2018-04-17 | 2021-07-20 | 联华电子股份有限公司 | 图案化方法 |
US11069692B2 (en) | 2018-07-31 | 2021-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | FinFET SRAM cells with dielectric fins |
US11437385B2 (en) | 2018-09-24 | 2022-09-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | FinFET SRAM cells with reduced fin pitch |
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EP2168008B1 (en) | 2014-11-26 |
JP5120983B2 (ja) | 2013-01-16 |
US20090017628A1 (en) | 2009-01-15 |
CN101730864B (zh) | 2012-07-18 |
US8642474B2 (en) | 2014-02-04 |
KR101520440B1 (ko) | 2015-05-15 |
KR20100057799A (ko) | 2010-06-01 |
EP2168008A1 (en) | 2010-03-31 |
TW200915389A (en) | 2009-04-01 |
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