CN101689530B - 再生基片的方法、层积晶片制造法和适宜的再生供体基片 - Google Patents

再生基片的方法、层积晶片制造法和适宜的再生供体基片 Download PDF

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CN101689530B
CN101689530B CN2008800213829A CN200880021382A CN101689530B CN 101689530 B CN101689530 B CN 101689530B CN 2008800213829 A CN2008800213829 A CN 2008800213829A CN 200880021382 A CN200880021382 A CN 200880021382A CN 101689530 B CN101689530 B CN 101689530B
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region
substrate
removal
height
modified
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CN101689530A (zh
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塞西尔·奥尔内特
哈里德·拉德万
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Soitec SA
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Soitec SA
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Priority claimed from PCT/EP2008/005107 external-priority patent/WO2009007003A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/16—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24488—Differential nonuniformity at margin

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  • Mechanical Treatment Of Semiconductor (AREA)
  • Recrystallisation Techniques (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
CN2008800213829A 2007-07-11 2008-06-24 再生基片的方法、层积晶片制造法和适宜的再生供体基片 Active CN101689530B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP07290869.2 2007-07-11
EP07290869A EP2015354A1 (en) 2007-07-11 2007-07-11 Method for recycling a substrate, laminated wafer fabricating method and suitable recycled donor substrate
EP08290490A EP2037495B1 (en) 2007-07-11 2008-05-28 Method for recycling a substrate, laminated wafer fabricating method and suitable recycled donor substrate
EP08290490.5 2008-05-28
PCT/EP2008/005107 WO2009007003A1 (en) 2007-07-11 2008-06-24 Method for recycling a substrate, laminated water fabricating method and suitable recycled donor substrate

Publications (2)

Publication Number Publication Date
CN101689530A CN101689530A (zh) 2010-03-31
CN101689530B true CN101689530B (zh) 2013-05-22

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CN2008800213829A Active CN101689530B (zh) 2007-07-11 2008-06-24 再生基片的方法、层积晶片制造法和适宜的再生供体基片

Country Status (7)

Country Link
US (1) US8324075B2 (https=)
EP (2) EP2015354A1 (https=)
JP (1) JP5099859B2 (https=)
KR (1) KR101487371B1 (https=)
CN (1) CN101689530B (https=)
AT (1) ATE504083T1 (https=)
DE (1) DE602008005817D1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8871109B2 (en) 2009-04-28 2014-10-28 Gtat Corporation Method for preparing a donor surface for reuse
FR2999801B1 (fr) * 2012-12-14 2014-12-26 Soitec Silicon On Insulator Procede de fabrication d'une structure
US20140268273A1 (en) * 2013-03-15 2014-09-18 Pixtronix, Inc. Integrated elevated aperture layer and display apparatus
US8946054B2 (en) 2013-04-19 2015-02-03 International Business Machines Corporation Crack control for substrate separation
US10535685B2 (en) 2013-12-02 2020-01-14 The Regents Of The University Of Michigan Fabrication of thin-film electronic devices with non-destructive wafer reuse
CN104119815B (zh) * 2014-08-04 2015-08-19 博洛尼家居用品(北京)股份有限公司 一种双面胶带
FR3048548B1 (fr) * 2016-03-02 2018-03-02 Soitec Procede de determination d'une energie convenable d'implantation dans un substrat donneur et procede de fabrication d'une structure de type semi-conducteur sur isolant
US20180033609A1 (en) * 2016-07-28 2018-02-01 QMAT, Inc. Removal of non-cleaved/non-transferred material from donor substrate
FR3063176A1 (fr) * 2017-02-17 2018-08-24 Soitec Masquage d'une zone au bord d'un substrat donneur lors d'une etape d'implantation ionique
FR3074608B1 (fr) * 2017-12-05 2019-12-06 Soitec Procede de preparation d'un residu de substrat donneur, substrat obtenu a l'issu de ce procede, et utilisation d'un tel susbtrat
KR102287395B1 (ko) * 2019-02-28 2021-08-06 김용석 플렉시블 전자 소자의 제조방법 및 그로부터 제조된 플렉시블 전자 소자
KR102523640B1 (ko) 2022-01-28 2023-04-19 주식회사 이노와이어리스 이동통신 단말 시험용 실드 박스

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596610B1 (en) * 1999-11-29 2003-07-22 Shin-Etsu Handotai Co. Ltd. Method for reclaiming delaminated wafer and reclaimed delaminated wafer
CN1959952A (zh) * 2005-10-18 2007-05-09 S.O.I.Tec绝缘体上硅技术公司 再循环外延施予晶片的方法

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Publication number Priority date Publication date Assignee Title
US5668045A (en) * 1994-11-30 1997-09-16 Sibond, L.L.C. Process for stripping outer edge of BESOI wafers
JP3932369B2 (ja) 1998-04-09 2007-06-20 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
US6664169B1 (en) * 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
JP3472197B2 (ja) * 1999-06-08 2003-12-02 キヤノン株式会社 半導体基材及び太陽電池の製造方法
KR100730806B1 (ko) * 1999-10-14 2007-06-20 신에쯔 한도타이 가부시키가이샤 Ｓｏｉ웨이퍼의 제조방법 및 ｓｏｉ 웨이퍼
TWI233154B (en) 2002-12-06 2005-05-21 Soitec Silicon On Insulator Method for recycling a substrate
FR2852445B1 (fr) * 2003-03-14 2005-05-20 Soitec Silicon On Insulator Procede de realisation de substrats ou composants sur substrats avec transfert de couche utile, pour la microelectronique, l'optoelectronique ou l'optique
US7402520B2 (en) 2004-11-26 2008-07-22 Applied Materials, Inc. Edge removal of silicon-on-insulator transfer wafer
FR2888400B1 (fr) * 2005-07-08 2007-10-19 Soitec Silicon On Insulator Procede de prelevement de couche
EP1777735A3 (fr) * 2005-10-18 2009-08-19 S.O.I.Tec Silicon on Insulator Technologies Procédé de recyclage d'une plaquette donneuse épitaxiée
JP4715470B2 (ja) * 2005-11-28 2011-07-06 株式会社Sumco 剥離ウェーハの再生加工方法及びこの方法により再生加工された剥離ウェーハ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596610B1 (en) * 1999-11-29 2003-07-22 Shin-Etsu Handotai Co. Ltd. Method for reclaiming delaminated wafer and reclaimed delaminated wafer
CN1959952A (zh) * 2005-10-18 2007-05-09 S.O.I.Tec绝缘体上硅技术公司 再循环外延施予晶片的方法

Also Published As

Publication number Publication date
KR101487371B1 (ko) 2015-01-29
US8324075B2 (en) 2012-12-04
CN101689530A (zh) 2010-03-31
DE602008005817D1 (de) 2011-05-12
EP2037495A1 (en) 2009-03-18
JP5099859B2 (ja) 2012-12-19
JP2010532928A (ja) 2010-10-14
EP2015354A1 (en) 2009-01-14
ATE504083T1 (de) 2011-04-15
KR20100044142A (ko) 2010-04-29
EP2037495B1 (en) 2011-03-30
US20100181653A1 (en) 2010-07-22

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