CN101587849B - 具有通过冲压形成的特征的半导体器件封装 - Google Patents

具有通过冲压形成的特征的半导体器件封装 Download PDF

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CN101587849B
CN101587849B CN200910149767XA CN200910149767A CN101587849B CN 101587849 B CN101587849 B CN 101587849B CN 200910149767X A CN200910149767X A CN 200910149767XA CN 200910149767 A CN200910149767 A CN 200910149767A CN 101587849 B CN101587849 B CN 101587849B
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stamping
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CN101587849A (zh
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A·C·特苏
M·艾斯拉米
谢方德
杨宏波
周明
J·徐
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GEM Services Inc USA
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CN200910149767XA 2008-04-04 2009-04-03 具有通过冲压形成的特征的半导体器件封装 Active CN101587849B (zh)

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US8106493B2 (en) 2012-01-31
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US7838339B2 (en) 2010-11-23
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