CN101582427B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101582427B
CN101582427B CN200910004381XA CN200910004381A CN101582427B CN 101582427 B CN101582427 B CN 101582427B CN 200910004381X A CN200910004381X A CN 200910004381XA CN 200910004381 A CN200910004381 A CN 200910004381A CN 101582427 B CN101582427 B CN 101582427B
Authority
CN
China
Prior art keywords
contact hole
film
gate electrode
semiconductor device
interlayer dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200910004381XA
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English (en)
Chinese (zh)
Other versions
CN101582427A (zh
Inventor
芦田基
神谷好一
浜砂荣二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN101582427A publication Critical patent/CN101582427A/zh
Application granted granted Critical
Publication of CN101582427B publication Critical patent/CN101582427B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN200910004381XA 1999-10-25 2000-04-29 半导体器件 Expired - Fee Related CN101582427B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP302270/1999 1999-10-25
JP30227099A JP2001127174A (ja) 1999-10-25 1999-10-25 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN00118811A Division CN1305228A (zh) 1999-10-25 2000-04-29 半导体器件

Publications (2)

Publication Number Publication Date
CN101582427A CN101582427A (zh) 2009-11-18
CN101582427B true CN101582427B (zh) 2011-05-11

Family

ID=17906998

Family Applications (2)

Application Number Title Priority Date Filing Date
CN00118811A Pending CN1305228A (zh) 1999-10-25 2000-04-29 半导体器件
CN200910004381XA Expired - Fee Related CN101582427B (zh) 1999-10-25 2000-04-29 半导体器件

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN00118811A Pending CN1305228A (zh) 1999-10-25 2000-04-29 半导体器件

Country Status (6)

Country Link
US (1) US6531747B1 (enExample)
JP (1) JP2001127174A (enExample)
KR (1) KR100377082B1 (enExample)
CN (2) CN1305228A (enExample)
DE (1) DE10019708A1 (enExample)
TW (1) TW478075B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464416B1 (ko) * 2002-05-14 2005-01-03 삼성전자주식회사 증가된 유효 채널 길이를 가지는 반도체 소자의 제조 방법
KR100549014B1 (ko) * 2004-07-21 2006-02-02 삼성전자주식회사 스페이서 패턴을 갖는 반도체 장치들 및 그 형성방법들
DE102004047751B3 (de) * 2004-09-30 2006-05-04 Infineon Technologies Ag Verfahren zur Herstellung von Transistorstrukturen für DRAM-Halbleiterbauelemente
KR100764737B1 (ko) * 2006-02-09 2007-10-08 삼성전자주식회사 에스램 셀 및 그 형성 방법
JP2010010260A (ja) * 2008-06-25 2010-01-14 Panasonic Corp 半導体記憶装置及びその製造方法
US9859286B2 (en) * 2014-12-23 2018-01-02 International Business Machines Corporation Low-drive current FinFET structure for improving circuit density of ratioed logic in SRAM devices
CN114156271A (zh) * 2015-04-30 2022-03-08 联华电子股份有限公司 静态随机存取存储器
CN106328188B (zh) * 2015-06-17 2020-07-28 联华电子股份有限公司 八晶体管静态随机存取存储器的布局图案与形成方法
KR102618350B1 (ko) * 2016-12-14 2023-12-28 삼성디스플레이 주식회사 디스플레이 장치
KR20210095277A (ko) * 2020-01-22 2021-08-02 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
US12363882B2 (en) * 2020-11-04 2025-07-15 Changxin Memory Technologies, Inc. Method of manufacturing semiconductor structure and semiconductor structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01119057A (ja) 1987-10-31 1989-05-11 Nec Corp Ｍｉｓ型半導体記憶装置
JPH1056174A (ja) 1996-08-09 1998-02-24 Denso Corp 半導体装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283710A (ja) * 1991-12-06 1993-10-29 Intel Corp 高電圧ｍｏｓトランジスタ及びその製造方法
JPH0697192A (ja) * 1992-07-29 1994-04-08 Kawasaki Steel Corp 半導体装置及びその製造方法
JPH07106452A (ja) 1993-10-04 1995-04-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2658844B2 (ja) 1993-12-16 1997-09-30 日本電気株式会社 半導体記憶装置
JP2689888B2 (ja) * 1993-12-30 1997-12-10 日本電気株式会社 半導体装置及びその製造方法
JP3259529B2 (ja) 1994-07-11 2002-02-25 ソニー株式会社 選択エッチング方法
US5763910A (en) * 1995-01-31 1998-06-09 Fujitsu Limited Semiconductor device having a through-hole formed on diffused layer by self-alignment
JP3518122B2 (ja) * 1996-01-12 2004-04-12 ソニー株式会社 半導体装置の製造方法
JP3795634B2 (ja) 1996-06-19 2006-07-12 株式会社東芝 半導体装置の製造方法
JPH10163344A (ja) * 1996-12-05 1998-06-19 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3216559B2 (ja) * 1997-02-12 2001-10-09 日本電気株式会社 半導体装置の製造方法
JPH1117026A (ja) * 1997-06-27 1999-01-22 Sony Corp 半導体記憶装置
JPH1187653A (ja) * 1997-09-09 1999-03-30 Fujitsu Ltd 半導体装置およびその製造方法
JPH11121710A (ja) * 1997-10-09 1999-04-30 Fujitsu Ltd 半導体装置及びその製造方法
JPH11176833A (ja) 1997-12-10 1999-07-02 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH11186236A (ja) * 1997-12-24 1999-07-09 Mitsubishi Electric Corp エッチング方法
JPH11233628A (ja) 1998-02-16 1999-08-27 Mitsubishi Electric Corp コンタクト構造の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01119057A (ja) 1987-10-31 1989-05-11 Nec Corp Ｍｉｓ型半導体記憶装置
JPH1056174A (ja) 1996-08-09 1998-02-24 Denso Corp 半導体装置

Also Published As

Publication number Publication date
TW478075B (en) 2002-03-01
US6531747B1 (en) 2003-03-11
CN1305228A (zh) 2001-07-25
KR100377082B1 (ko) 2003-03-26
DE10019708A1 (de) 2001-05-10
CN101582427A (zh) 2009-11-18
KR20010039584A (ko) 2001-05-15
JP2001127174A (ja) 2001-05-11

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SE01 Entry into force of request for substantive examination
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C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110511

Termination date: 20140429