CN101421856A - 半导体发光元件、半导体发光元件的制造方法以及灯 - Google Patents

半导体发光元件、半导体发光元件的制造方法以及灯 Download PDF

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Publication number
CN101421856A
CN101421856A CNA2007800128677A CN200780012867A CN101421856A CN 101421856 A CN101421856 A CN 101421856A CN A2007800128677 A CNA2007800128677 A CN A2007800128677A CN 200780012867 A CN200780012867 A CN 200780012867A CN 101421856 A CN101421856 A CN 101421856A
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CN
China
Prior art keywords
izo film
semiconductor light
emitting element
layer
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007800128677A
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English (en)
Chinese (zh)
Inventor
福永修大
大泽弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of CN101421856A publication Critical patent/CN101421856A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
CNA2007800128677A 2006-04-14 2007-04-13 半导体发光元件、半导体发光元件的制造方法以及灯 Pending CN101421856A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006112012A JP5265090B2 (ja) 2006-04-14 2006-04-14 半導体発光素子およびランプ
JP112012/2006 2006-04-14

Publications (1)

Publication Number Publication Date
CN101421856A true CN101421856A (zh) 2009-04-29

Family

ID=38609590

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800128677A Pending CN101421856A (zh) 2006-04-14 2007-04-13 半导体发光元件、半导体发光元件的制造方法以及灯

Country Status (7)

Country Link
US (1) US8334200B2 (enExample)
EP (1) EP2012371B1 (enExample)
JP (1) JP5265090B2 (enExample)
KR (1) KR100988143B1 (enExample)
CN (1) CN101421856A (enExample)
TW (1) TWI359509B (enExample)
WO (1) WO2007119830A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101847677A (zh) * 2010-04-07 2010-09-29 中国科学院半导体研究所 采用mvpe两步法制备氧化锌透明电极的方法
CN110459658A (zh) * 2018-05-08 2019-11-15 山东浪潮华光光电子股份有限公司 一种P型GaN层的UV LED芯片及其制备方法
CN112420888A (zh) * 2021-01-21 2021-02-26 华灿光电（浙江）有限公司 紫外发光二极管外延片及其制备方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5201566B2 (ja) * 2006-12-11 2013-06-05 豊田合成株式会社 化合物半導体発光素子及びその製造方法
WO2008081566A1 (ja) 2006-12-28 2008-07-10 Nec Corporation 電極構造、半導体素子、およびそれらの製造方法
JP2008235877A (ja) * 2007-02-19 2008-10-02 Showa Denko Kk 太陽電池及びその製造方法
JP2009260237A (ja) * 2008-01-24 2009-11-05 Showa Denko Kk 化合物半導体発光素子及びその製造方法、化合物半導体発光素子用導電型透光性電極、ランプ、電子機器並びに機械装置
US20090205707A1 (en) * 2008-02-19 2009-08-20 Showa Denko K.K. Solar cell and method for producing the same
KR101481855B1 (ko) * 2008-03-06 2015-01-12 스미토모 긴조쿠 고잔 가부시키가이샤 반도체 발광소자, 반도체 발광소자의 제조방법 및 이 반도체 발광소자를 사용한 램프
KR101221281B1 (ko) 2008-03-13 2013-01-11 쇼와 덴코 가부시키가이샤 반도체 발광 소자 및 그 제조 방법
JP5083973B2 (ja) * 2008-03-28 2012-11-28 スタンレー電気株式会社 光半導体素子の製造方法
JP2009246275A (ja) * 2008-03-31 2009-10-22 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びランプ
JP2009253056A (ja) * 2008-04-07 2009-10-29 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びランプ
JP2009283551A (ja) 2008-05-20 2009-12-03 Showa Denko Kk 半導体発光素子及びその製造方法、ランプ
JP2011086855A (ja) * 2009-10-19 2011-04-28 Showa Denko Kk 半導体発光素子の製造方法
JP5379703B2 (ja) * 2010-01-26 2013-12-25 パナソニック株式会社 紫外半導体発光素子
US20110244663A1 (en) * 2010-04-01 2011-10-06 Applied Materials, Inc. Forming a compound-nitride structure that includes a nucleation layer
JP5829014B2 (ja) * 2010-09-30 2015-12-09 シャープ株式会社 化合物半導体発光素子の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6222312A (ja) * 1985-07-23 1987-01-30 アルプス電気株式会社 透明導電性被膜の形成方法
JPH05299175A (ja) 1992-04-24 1993-11-12 Fuji Xerox Co Ltd Ｅｌ発光素子
JP2000026119A (ja) 1998-07-09 2000-01-25 Hoya Corp 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000067657A (ja) * 1998-08-26 2000-03-03 Internatl Business Mach Corp <Ibm> 赤外線透過に優れた透明導電膜及びその製造方法
CN1195886C (zh) * 1999-11-25 2005-04-06 出光兴产株式会社 溅射靶、透明导电氧化物和制备该溅射靶的方法
JP2002164570A (ja) * 2000-11-24 2002-06-07 Shiro Sakai 窒化ガリウム系化合物半導体装置
JP4310984B2 (ja) * 2002-02-06 2009-08-12 株式会社日立製作所 有機発光表示装置
JP3720341B2 (ja) * 2003-02-12 2005-11-24 ローム株式会社 半導体発光素子
JP4259268B2 (ja) 2003-10-20 2009-04-30 豊田合成株式会社 半導体発光素子
JP2005217331A (ja) 2004-01-30 2005-08-11 Nichia Chem Ind Ltd 半導体発光素子
JP2005259891A (ja) * 2004-03-10 2005-09-22 Toyoda Gosei Co Ltd 発光装置
KR100634503B1 (ko) * 2004-03-12 2006-10-16 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
US7339255B2 (en) 2004-08-24 2008-03-04 Kabushiki Kaisha Toshiba Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
US8728615B2 (en) * 2004-09-13 2014-05-20 Sumitomo Metal Mining Co., Ltd. Transparent conductive film and method of fabricating the same, transparent conductive base material, and light-emitting device
JP4578929B2 (ja) 2004-10-15 2010-11-10 日本エステル株式会社 ポリ乳酸系複合バインダー繊維

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAE-HONG LIM ET.AL: "Low-resistivity and transparent indium-oxide-doped ZnO ohmic contact to p-type GaN", 《APPLIED PHYSICS LETTERS》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101847677A (zh) * 2010-04-07 2010-09-29 中国科学院半导体研究所 采用mvpe两步法制备氧化锌透明电极的方法
CN101847677B (zh) * 2010-04-07 2012-11-14 中国科学院半导体研究所 采用mvpe两步法制备氧化锌透明电极的方法
CN110459658A (zh) * 2018-05-08 2019-11-15 山东浪潮华光光电子股份有限公司 一种P型GaN层的UV LED芯片及其制备方法
CN112420888A (zh) * 2021-01-21 2021-02-26 华灿光电（浙江）有限公司 紫外发光二极管外延片及其制备方法

Also Published As

Publication number Publication date
KR20080104363A (ko) 2008-12-02
WO2007119830A1 (ja) 2007-10-25
US8334200B2 (en) 2012-12-18
EP2012371A4 (en) 2014-01-22
TW200805714A (en) 2008-01-16
JP5265090B2 (ja) 2013-08-14
TWI359509B (en) 2012-03-01
EP2012371A1 (en) 2009-01-07
JP2007287845A (ja) 2007-11-01
EP2012371B1 (en) 2015-02-25
US20090179220A1 (en) 2009-07-16
KR100988143B1 (ko) 2010-10-18

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Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: TOYODA GOSEI CO., LTD.

Free format text: FORMER OWNER: SHOWA DENKO K.K.

Effective date: 20130226

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20130226

Address after: Aichi

Applicant after: Toyoda Gosei Co., Ltd.

Address before: Tokyo, Japan, Japan

Applicant before: Showa Denko K. K.

C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20090429