WO2008081566A1 - 電極構造、半導体素子、およびそれらの製造方法 - Google Patents

電極構造、半導体素子、およびそれらの製造方法 Download PDF

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Publication number
WO2008081566A1
WO2008081566A1 PCT/JP2007/001381 JP2007001381W WO2008081566A1 WO 2008081566 A1 WO2008081566 A1 WO 2008081566A1 JP 2007001381 W JP2007001381 W JP 2007001381W WO 2008081566 A1 WO2008081566 A1 WO 2008081566A1
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WO
WIPO (PCT)
Prior art keywords
electrode
electrode structure
producing
semiconductor device
semiconductor layer
Prior art date
Application number
PCT/JP2007/001381
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English (en)
French (fr)
Inventor
Shigeru Koumoto
Tatsuya Sasaki
Kazuhiro Shiba
Masayoshi Sumino
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2008552017A priority Critical patent/JPWO2008081566A1/ja
Priority to US12/519,698 priority patent/US8169078B2/en
Publication of WO2008081566A1 publication Critical patent/WO2008081566A1/ja
Priority to US13/269,153 priority patent/US8304335B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Abstract

　本発明によると、窒化物半導体層と、前記窒化物半導体層上に設けられた電極と、前記電極上に設けられた電極保護膜とを備え、前記窒化物半導体層は、Ｎｂ、ＨｆまたはＺｒを構成元素として含む金属窒化物を含有し、前記電極の一部には、ＴｉまたはＶを構成元素として含む金属酸化物が形成されており、前記電極保護膜は、前記電極の少なくとも一部分を覆うとともに、ＡｕまたはＰｔを構成元素とする保護層を含むことを特徴とする電極構造が提供される。
PCT/JP2007/001381 2006-12-28 2007-12-11 電極構造、半導体素子、およびそれらの製造方法 WO2008081566A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008552017A JPWO2008081566A1 (ja) 2006-12-28 2007-12-11 電極構造、半導体素子、およびそれらの製造方法
US12/519,698 US8169078B2 (en) 2006-12-28 2007-12-11 Electrode structure, semiconductor element, and methods of manufacturing the same
US13/269,153 US8304335B2 (en) 2006-12-28 2011-10-07 Electrode structure, semiconductor element, and methods of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-354091 2006-12-28
JP2006354091 2006-12-28

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/519,698 A-371-Of-International US8169078B2 (en) 2006-12-28 2007-12-11 Electrode structure, semiconductor element, and methods of manufacturing the same
US13/269,153 Division US8304335B2 (en) 2006-12-28 2011-10-07 Electrode structure, semiconductor element, and methods of manufacturing the same

Publications (1)

Publication Number Publication Date
WO2008081566A1 true WO2008081566A1 (ja) 2008-07-10

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US (2) US8169078B2 (ja)
JP (1) JPWO2008081566A1 (ja)
WO (1) WO2008081566A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010183071A (ja) * 2009-01-08 2010-08-19 Furukawa Electric Co Ltd:The 半導体発光素子およびその製造方法
US10910226B2 (en) 2016-10-28 2021-02-02 Osram Oled Gmbh Method of producing a semiconductor laser and semiconductor laser

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140273525A1 (en) * 2013-03-13 2014-09-18 Intermolecular, Inc. Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films
JPWO2016006298A1 (ja) * 2014-07-07 2017-04-27 ソニー株式会社 半導体光デバイス
JP6468894B2 (ja) * 2015-03-11 2019-02-13 キヤノン株式会社 インクジェット記録装置およびインクジェット記録方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098407A (ja) * 1995-06-20 1997-01-10 Nichia Chem Ind Ltd ｎ型窒化物半導体層の電極
JP2000174341A (ja) * 1998-12-08 2000-06-23 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
JP2005340860A (ja) * 2005-08-12 2005-12-08 Toshiba Electronic Engineering Corp 半導体発光素子
JP2006135311A (ja) * 2004-10-08 2006-05-25 Mitsubishi Cable Ind Ltd 窒化物半導体を用いた発光ダイオード

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5950070A (en) * 1997-05-15 1999-09-07 Kulicke & Soffa Investments Method of forming a chip scale package, and a tool used in forming the chip scale package
US6429530B1 (en) * 1998-11-02 2002-08-06 International Business Machines Corporation Miniaturized chip scale ball grid array semiconductor package
US6656765B1 (en) * 2000-02-02 2003-12-02 Amkor Technology, Inc. Fabricating very thin chip size semiconductor packages
JP4137936B2 (ja) * 2005-11-16 2008-08-20 昭和電工株式会社 窒化ガリウム系化合物半導体発光素子
JP5265090B2 (ja) * 2006-04-14 2013-08-14 豊田合成株式会社 半導体発光素子およびランプ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098407A (ja) * 1995-06-20 1997-01-10 Nichia Chem Ind Ltd ｎ型窒化物半導体層の電極
JP2000174341A (ja) * 1998-12-08 2000-06-23 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
JP2006135311A (ja) * 2004-10-08 2006-05-25 Mitsubishi Cable Ind Ltd 窒化物半導体を用いた発光ダイオード
JP2005340860A (ja) * 2005-08-12 2005-12-08 Toshiba Electronic Engineering Corp 半導体発光素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010183071A (ja) * 2009-01-08 2010-08-19 Furukawa Electric Co Ltd:The 半導体発光素子およびその製造方法
US10910226B2 (en) 2016-10-28 2021-02-02 Osram Oled Gmbh Method of producing a semiconductor laser and semiconductor laser
US11935755B2 (en) 2016-10-28 2024-03-19 Osram Oled Gmbh Method of producing a semiconductor laser and semiconductor laser

Also Published As

Publication number Publication date
US20120028456A1 (en) 2012-02-02
US20100032839A1 (en) 2010-02-11
JPWO2008081566A1 (ja) 2010-04-30
US8304335B2 (en) 2012-11-06
US8169078B2 (en) 2012-05-01

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