WO2008093873A1 - ＺｎＯ系半導体素子 - Google Patents

ＺｎＯ系半導体素子 Download PDF

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Publication number
WO2008093873A1
WO2008093873A1 PCT/JP2008/051790 JP2008051790W WO2008093873A1 WO 2008093873 A1 WO2008093873 A1 WO 2008093873A1 JP 2008051790 W JP2008051790 W JP 2008051790W WO 2008093873 A1 WO2008093873 A1 WO 2008093873A1
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zno semiconductor
electrode
film
organic
semiconductor element
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PCT/JP2008/051790
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English (en)
French (fr)
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Ken Nakahara
Hiroyuki Yuji
Masashi Kawasaki
Akira Ohtomo
Atsushi Tsukazaki
Tomoteru Fukumura
Masaki Nakano
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Rohm Co., Ltd.
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Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to EP08710768A priority Critical patent/EP2112695A1/en
Priority to US12/525,537 priority patent/US20100102309A1/en
Publication of WO2008093873A1 publication Critical patent/WO2008093873A1/ja

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Abstract

上述した課題を解決するために創案されたものであり、ＺｎＯ系半導体と有機物とを能動的な役割に用い、従来とは異なる全く新規な機能を有するＺｎＯ系半導体素子を提供する。 　ＺｎＯ系半導体１上に有機物電極２が形成されており、有機物電極２の上にはＡｕ膜３が形成されている。ＺｎＯ系半導体１の裏面には有機物電極２に対向するように、Ｔｉ膜４とＡｕ膜５の多層金属膜で構成された電極が形成されている。有機物電極２とＺｎＯ系半導体１との接合界面は、ｐｎ接合のような状態となっており、これらの間で整流作用が発生する。
PCT/JP2008/051790 2007-02-02 2008-02-04 ＺｎＯ系半導体素子 WO2008093873A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08710768A EP2112695A1 (en) 2007-02-02 2008-02-04 ZnO SEMICONDUCTOR ELEMENT
US12/525,537 US20100102309A1 (en) 2007-02-02 2008-02-04 ZNO-Based Semiconductor Element

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-024702 2007-02-02
JP2007024702 2007-02-02
JP2008021953A JP4362635B2 (ja) 2007-02-02 2008-01-31 ＺｎＯ系半導体素子
JP2008-021953 2008-01-31

Publications (1)

Publication Number Publication Date
WO2008093873A1 true WO2008093873A1 (ja) 2008-08-07

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ID=39674173

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Application Number Title Priority Date Filing Date
PCT/JP2008/051790 WO2008093873A1 (ja) 2007-02-02 2008-02-04 ＺｎＯ系半導体素子

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US (1) US20100102309A1 (ja)
EP (1) EP2112695A1 (ja)
JP (1) JP4362635B2 (ja)
KR (1) KR20090118947A (ja)
TW (1) TW200849668A (ja)
WO (1) WO2008093873A1 (ja)

Cited By (2)

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WO2010110475A1 (ja) * 2009-03-27 2010-09-30 独立行政法人物質・材料研究機構 ショットキー型接合素子とこれを用いた光電変換素子及び太陽電池
US20150303316A1 (en) * 2012-05-14 2015-10-22 The Boeing Company Layered bonded structures formed from reactive bonding of zinc metal and zinc peroxide

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JP4968660B2 (ja) * 2005-08-24 2012-07-04 スタンレー電気株式会社 ＺｎＯ系化合物半導体結晶の製造方法、及び、ＺｎＯ系化合物半導体基板
JP2008244006A (ja) * 2007-03-26 2008-10-09 Japan Science & Technology Agency ダイオード及びその製造方法
WO2009144972A1 (ja) 2008-05-29 2009-12-03 株式会社村田製作所 シート型振動体および音響機器
EP2288179B1 (en) 2008-05-29 2015-09-30 Murata Manufacturing Co., Ltd. Piezoelectric speaker, speaker device and tactile feedback device
JP2011023399A (ja) * 2009-07-13 2011-02-03 Tottori Univ 有機−無機ハイブリッド接合型光電変換素子
WO2011041232A1 (en) * 2009-09-29 2011-04-07 Plextronics, Inc. Organic electronic devices, compositions, and methods
KR101036213B1 (ko) * 2010-01-26 2011-05-20 광주과학기술원 발광소자와 태양전지 성능을 포함하는 전자소자
TWI422082B (zh) * 2010-08-03 2014-01-01 Univ Nat Sun Yat Sen 複合壓電換能裝置
JP5672868B2 (ja) * 2010-08-31 2015-02-18 富士通株式会社 化合物半導体装置及びその製造方法
US8883556B2 (en) * 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5731869B2 (ja) * 2011-03-24 2015-06-10 スタンレー電気株式会社 半導体紫外線受光装置
CN102157659A (zh) * 2011-03-24 2011-08-17 北京交通大学 一种全湿法制备的聚合物pled器件及其制备方法
JP5800291B2 (ja) 2011-04-13 2015-10-28 ローム株式会社 ＺｎＯ系半導体素子およびその製造方法
JP2013120878A (ja) * 2011-12-08 2013-06-17 Bridgestone Corp 太陽電池及び太陽電池の製造方法
WO2014185339A1 (ja) 2013-05-17 2014-11-20 日本碍子株式会社 光起電力素子
CN105453272B (zh) * 2013-08-19 2020-08-21 出光兴产株式会社 氧化物半导体基板及肖特基势垒二极管元件
JP5688646B2 (ja) * 2013-11-26 2015-03-25 国立大学法人鳥取大学 有機−無機ハイブリッド接合型光電変換素子
JP6281146B2 (ja) 2014-07-22 2018-02-21 株式会社Flosfia 結晶性半導体膜および板状体ならびに半導体装置
CN104816080A (zh) * 2015-05-07 2015-08-05 哈尔滨飞机工业集团有限责任公司 一种焊接区域加温装置
US20170092747A1 (en) 2015-09-30 2017-03-30 Sumitomo Electric Industries, Ltd. Hemt having heavily doped n-type regions and process of forming the same
TW201813095A (zh) * 2016-07-11 2018-04-01 半導體能源硏究所股份有限公司 半導體裝置
JP6631849B2 (ja) * 2016-12-15 2020-01-15 パナソニックＩｐマネジメント株式会社 Ｒａｍｏ４基板、およびｉｉｉ族窒化物結晶の製造方法
CN108226233B (zh) * 2018-01-08 2020-01-31 中国工程物理研究院化工材料研究所 分级结构ZnO@ZnO纳米复合气敏材料及其制备方法
US11699749B2 (en) * 2018-07-12 2023-07-11 Namlab Ggmbh Heterostructure of an electronic circuit having a semiconductor device
DE102018006173B4 (de) * 2018-07-12 2020-07-09 Namlab Ggmbh Heterostruktur einer elektronischen Schaltung mit einem Halbleiterbauelement

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