WO2009011148A1 - 圧電薄膜共振素子及びこれを用いた回路部品 - Google Patents

圧電薄膜共振素子及びこれを用いた回路部品 Download PDF

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Publication number
WO2009011148A1
WO2009011148A1 PCT/JP2008/053920 JP2008053920W WO2009011148A1 WO 2009011148 A1 WO2009011148 A1 WO 2009011148A1 JP 2008053920 W JP2008053920 W JP 2008053920W WO 2009011148 A1 WO2009011148 A1 WO 2009011148A1
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WO
WIPO (PCT)
Prior art keywords
surface electrode
thin film
piezoelectric thin
resonant element
same
Prior art date
Application number
PCT/JP2008/053920
Other languages
English (en)
French (fr)
Inventor
Tokihiro Nishihara
Motoaki Hara
Shinji Taniguchi
Masafumi Iwaki
Tsuyoshi Yokoyama
Masanori Ueda
Original Assignee
Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to KR1020097026922A priority Critical patent/KR101242314B1/ko
Priority to JP2009523557A priority patent/JP5009369B2/ja
Priority to CN2008800232853A priority patent/CN101689845B/zh
Publication of WO2009011148A1 publication Critical patent/WO2009011148A1/ja
Priority to US12/642,048 priority patent/US8125123B2/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0428—Modification of the thickness of an element of an electrode

Abstract

　圧電薄膜共振素子（１）は、楕円の平面形状を有し、外周に２５°～５５°の範囲内の所定の角度（例えば、およそ３０°）で傾斜した傾斜部（３ａ）を有する下面電極（３）と楕円の平面形状を有する上面電極（５）と両電極に挟まれた圧電膜（４）との積層構造からなる共振部を具備する。上面電極（５）の下面電極（３）の傾斜部（３ａ）が対向する位置の一部に付加膜（８）が設けられ、これにより共振部の下面電極（３）の傾斜部（３ａ）における積層厚のうち一部の積層厚Ｈcが共振部の下面電極（３）の傾斜部（３ａ）より内側部分における積層厚ＨAよりも厚くなっている。
PCT/JP2008/053920 2007-07-13 2008-03-05 圧電薄膜共振素子及びこれを用いた回路部品 WO2009011148A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020097026922A KR101242314B1 (ko) 2007-07-13 2008-03-05 압전 박막 공진 소자 및 이를 이용한 회로 부품
JP2009523557A JP5009369B2 (ja) 2007-07-13 2008-03-05 圧電薄膜共振素子及びこれを用いた回路部品
CN2008800232853A CN101689845B (zh) 2007-07-13 2008-03-05 压电薄膜共振元件以及利用它的电路部件
US12/642,048 US8125123B2 (en) 2007-07-13 2009-12-18 Piezoelectric thin film resonant element and circuit component using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2007/064015 WO2009011022A1 (ja) 2007-07-13 2007-07-13 圧電薄膜共振素子及びこれを用いた回路部品
JPPCT/JP2007/064015 2007-07-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/642,048 Continuation US8125123B2 (en) 2007-07-13 2009-12-18 Piezoelectric thin film resonant element and circuit component using the same

Publications (1)

Publication Number Publication Date
WO2009011148A1 true WO2009011148A1 (ja) 2009-01-22

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Family Applications (2)

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PCT/JP2007/064015 WO2009011022A1 (ja) 2007-07-13 2007-07-13 圧電薄膜共振素子及びこれを用いた回路部品
PCT/JP2008/053920 WO2009011148A1 (ja) 2007-07-13 2008-03-05 圧電薄膜共振素子及びこれを用いた回路部品

Family Applications Before (1)

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Country Status (4)

Country Link
US (1) US8125123B2 (ja)
KR (1) KR101242314B1 (ja)
CN (1) CN101689845B (ja)
WO (2) WO2009011022A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9071224B2 (en) 2011-12-12 2015-06-30 Taiyo Yuden Co., Ltd. Filter and duplexer
JP2018037906A (ja) * 2016-08-31 2018-03-08 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ。
US10615776B2 (en) 2017-07-03 2020-04-07 Taiyo Yuden Co., Ltd. Piezoelectric thin film resonator, filter, and multiplexer
JP2020202413A (ja) * 2019-06-05 2020-12-17 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ

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JP5563739B2 (ja) * 2008-02-20 2014-07-30 太陽誘電株式会社 圧電薄膜共振器、フィルタ、デュープレクサ、通信モジュール、および通信装置
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KR101856060B1 (ko) 2011-12-01 2018-05-10 삼성전자주식회사 체적 음향 공진기
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KR101918031B1 (ko) 2013-01-22 2018-11-13 삼성전자주식회사 스퓨리어스 공진을 감소시키는 공진기 및 공진기 제작 방법
JP6336712B2 (ja) * 2013-01-28 2018-06-06 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
JP6185292B2 (ja) * 2013-06-10 2017-08-23 太陽誘電株式会社 弾性波デバイス
KR20150023086A (ko) * 2013-08-22 2015-03-05 (주)와이솔 압전 소자 기반 진동 모듈
JP6333540B2 (ja) * 2013-11-11 2018-05-30 太陽誘電株式会社 圧電薄膜共振子、フィルタ、及び分波器
JP6325799B2 (ja) 2013-11-11 2018-05-16 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
JP6325798B2 (ja) 2013-11-11 2018-05-16 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
CN105428520A (zh) * 2015-11-09 2016-03-23 业成光电（深圳）有限公司 压电元件的制造方法及压电基板
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KR102642910B1 (ko) * 2016-05-18 2024-03-04 삼성전기주식회사 음향 공진기 및 그 제조 방법
KR20180018149A (ko) * 2016-08-12 2018-02-21 삼성전기주식회사 체적 음향 공진기
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WO2020203093A1 (ja) * 2019-03-29 2020-10-08 株式会社村田製作所 弾性波装置
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US9071224B2 (en) 2011-12-12 2015-06-30 Taiyo Yuden Co., Ltd. Filter and duplexer
JP2018037906A (ja) * 2016-08-31 2018-03-08 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ。
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Also Published As

Publication number Publication date
US8125123B2 (en) 2012-02-28
KR101242314B1 (ko) 2013-03-12
WO2009011022A1 (ja) 2009-01-22
CN101689845B (zh) 2013-01-23
KR20100023892A (ko) 2010-03-04
US20100148636A1 (en) 2010-06-17
CN101689845A (zh) 2010-03-31

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