ATE504975T1 - Piezoelektrischer resonator, piezoelektrischer filter und kommunikationsvorrichtung - Google Patents

Piezoelektrischer resonator, piezoelektrischer filter und kommunikationsvorrichtung

Info

Publication number
ATE504975T1
ATE504975T1 AT03021253T AT03021253T ATE504975T1 AT E504975 T1 ATE504975 T1 AT E504975T1 AT 03021253 T AT03021253 T AT 03021253T AT 03021253 T AT03021253 T AT 03021253T AT E504975 T1 ATE504975 T1 AT E504975T1
Authority
AT
Austria
Prior art keywords
piezoelectric
concavity
vibrating section
opening
communication device
Prior art date
Application number
AT03021253T
Other languages
English (en)
Inventor
Tadashi Nomura
Hajime Yamada
Ryuichi Kubo
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Application granted granted Critical
Publication of ATE504975T1 publication Critical patent/ATE504975T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
AT03021253T 2002-09-25 2003-09-18 Piezoelektrischer resonator, piezoelektrischer filter und kommunikationsvorrichtung ATE504975T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002279428A JP3879643B2 (ja) 2002-09-25 2002-09-25 圧電共振子、圧電フィルタ、通信装置

Publications (1)

Publication Number Publication Date
ATE504975T1 true ATE504975T1 (de) 2011-04-15

Family

ID=31987094

Family Applications (2)

Application Number Title Priority Date Filing Date
AT03021253T ATE504975T1 (de) 2002-09-25 2003-09-18 Piezoelektrischer resonator, piezoelektrischer filter und kommunikationsvorrichtung
AT06022420T ATE555544T1 (de) 2002-09-25 2003-09-18 Piezoelektrischer resonator, piezoelektrischer filter und kommunikationsvorrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT06022420T ATE555544T1 (de) 2002-09-25 2003-09-18 Piezoelektrischer resonator, piezoelektrischer filter und kommunikationsvorrichtung

Country Status (7)

Country Link
US (1) US7161447B2 (de)
EP (2) EP1406386B1 (de)
JP (1) JP3879643B2 (de)
KR (1) KR100550086B1 (de)
CN (1) CN1322671C (de)
AT (2) ATE504975T1 (de)
DE (1) DE60336617D1 (de)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7275292B2 (en) * 2003-03-07 2007-10-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method for fabricating an acoustical resonator on a substrate
US7164222B2 (en) * 2003-06-26 2007-01-16 Intel Corporation Film bulk acoustic resonator (FBAR) with high thermal conductivity
JP2005117641A (ja) 2003-09-17 2005-04-28 Matsushita Electric Ind Co Ltd 圧電体共振器、それを用いたフィルタ及び共用器
JP2005311567A (ja) * 2004-04-20 2005-11-04 Sony Corp フィルタ装置及び送受信機
JP4432972B2 (ja) 2004-09-10 2010-03-17 株式会社村田製作所 圧電薄膜共振子
US7388454B2 (en) * 2004-10-01 2008-06-17 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using alternating frame structure
US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
US7202560B2 (en) 2004-12-15 2007-04-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wafer bonding of micro-electro mechanical systems to active circuitry
US7791434B2 (en) * 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
JP4696597B2 (ja) * 2005-03-03 2011-06-08 宇部興産株式会社 薄膜圧電共振器およびそれを用いた薄膜圧電フィルタ
JP4617936B2 (ja) * 2005-03-14 2011-01-26 ソニー株式会社 圧電共振素子の製造方法および圧電共振素子
US7369013B2 (en) * 2005-04-06 2008-05-06 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using filled recessed region
JP2006339873A (ja) * 2005-05-31 2006-12-14 Toshiba Corp 薄膜圧電共振器、フィルタ及び電圧制御発振器
JP2009510884A (ja) * 2005-09-30 2009-03-12 エヌエックスピー ビー ヴィ 薄膜バルク音響（ｂａｗ）共振器におけるまたはそれに関連する改良
US7737807B2 (en) * 2005-10-18 2010-06-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators
US7675390B2 (en) * 2005-10-18 2010-03-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator
CN101292422B (zh) * 2005-11-04 2013-01-16 株式会社村田制作所 压电谐振器、滤波器、以及双模滤波器
US7612636B2 (en) * 2006-01-30 2009-11-03 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Impedance transforming bulk acoustic wave baluns
JP4963193B2 (ja) * 2006-03-07 2012-06-27 日本碍子株式会社 圧電薄膜デバイス
US20070210748A1 (en) * 2006-03-09 2007-09-13 Mark Unkrich Power supply and electronic device having integrated power supply
US20070210724A1 (en) * 2006-03-09 2007-09-13 Mark Unkrich Power adapter and DC-DC converter having acoustic transformer
US7746677B2 (en) * 2006-03-09 2010-06-29 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. AC-DC converter circuit and power supply
US7479685B2 (en) * 2006-03-10 2009-01-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Electronic device on substrate with cavity and mitigated parasitic leakage path
US20080094186A1 (en) * 2006-10-04 2008-04-24 Viking Access Systems, Llc Apparatus and method for monitoring and controlling gate operators via power line communication
KR100780842B1 (ko) * 2006-12-14 2007-11-30 주식회사 에스세라 공진 구조체를 가지는 압전 공진자의 형성방법들
JP4870541B2 (ja) * 2006-12-15 2012-02-08 太陽誘電株式会社 圧電薄膜共振器およびフィルタ
DE112007002969B4 (de) 2007-01-24 2017-12-21 Murata Mfg. Co., Ltd. Piezoelektrischer Resonator und piezoelektrisches Filter
US7791435B2 (en) * 2007-09-28 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Single stack coupled resonators having differential output
US7855618B2 (en) * 2008-04-30 2010-12-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator electrical impedance transformers
US7732977B2 (en) * 2008-04-30 2010-06-08 Avago Technologies Wireless Ip (Singapore) Transceiver circuit for film bulk acoustic resonator (FBAR) transducers
JP5229945B2 (ja) * 2008-09-09 2013-07-03 太陽誘電株式会社 フィルタ、デュープレクサ、および通信装置
US8902023B2 (en) * 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US8248185B2 (en) * 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
US8456257B1 (en) * 2009-11-12 2013-06-04 Triquint Semiconductor, Inc. Bulk acoustic wave devices and method for spurious mode suppression
US8193877B2 (en) * 2009-11-30 2012-06-05 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Duplexer with negative phase shifting circuit
US9243316B2 (en) 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9048812B2 (en) 2011-02-28 2015-06-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9401692B2 (en) 2012-10-29 2016-07-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having collar structure
US9490771B2 (en) 2012-10-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and frame
US9490418B2 (en) 2011-03-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer
US8575820B2 (en) 2011-03-29 2013-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US8350445B1 (en) 2011-06-16 2013-01-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer and bridge
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
CN102567779A (zh) * 2012-01-05 2012-07-11 天津理工大学 IDT/ ZnO/ Al/金刚石多层膜结构的声表面波射频识别标签
US9385684B2 (en) 2012-10-23 2016-07-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having guard ring
KR101959204B1 (ko) * 2013-01-09 2019-07-04 삼성전자주식회사 무선 주파수 필터 및 무선 주파수 필터의 제조방법
WO2016158048A1 (ja) * 2015-03-31 2016-10-06 株式会社村田製作所 共振子
JP6903471B2 (ja) 2017-04-07 2021-07-14 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ
KR20200046535A (ko) * 2018-10-25 2020-05-07 삼성전기주식회사 탄성파 필터 장치
CN111193490A (zh) * 2018-11-14 2020-05-22 天津大学 散热结构、带散热结构的体声波谐振器、滤波器和电子设备
CN111193488B (zh) * 2018-11-14 2024-01-26 天津大学 散热结构、带散热结构的体声波谐振器、滤波器和电子设备
CN111342797A (zh) * 2018-12-18 2020-06-26 天津大学 压电滤波器及具有其的电子设备
CN111010132A (zh) * 2019-07-08 2020-04-14 天津大学 体声波谐振器、滤波器及电子设备
CN111010129A (zh) * 2019-07-15 2020-04-14 天津大学 体声波谐振器器件、滤波器和电子设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831609A (ja) 1981-08-19 1983-02-24 Nec Corp 薄膜圧電振動子
JPS60206033A (ja) 1984-03-29 1985-10-17 Seiko Instr & Electronics Ltd 半導体集積回路素子
JPH02185057A (ja) 1989-01-12 1990-07-19 Toshiba Corp 微細配線層を有する半導体装置
US5231327A (en) 1990-12-14 1993-07-27 Tfr Technologies, Inc. Optimized piezoelectric resonator-based networks
US5696423A (en) 1995-06-29 1997-12-09 Motorola, Inc. Temperature compenated resonator and method
US5910756A (en) * 1997-05-21 1999-06-08 Nokia Mobile Phones Limited Filters and duplexers utilizing thin film stacked crystal filter structures and thin film bulk acoustic wave resonators
US6150703A (en) 1998-06-29 2000-11-21 Trw Inc. Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials
US6215375B1 (en) * 1999-03-30 2001-04-10 Agilent Technologies, Inc. Bulk acoustic wave resonator with improved lateral mode suppression
FI107660B (fi) * 1999-07-19 2001-09-14 Nokia Mobile Phones Ltd Resonaattorirakenne
JP2001168674A (ja) 1999-12-09 2001-06-22 Murata Mfg Co Ltd 圧電共振子及び電子機器
FI113111B (fi) 2000-11-24 2004-02-27 Nokia Corp Pietsosähköisiä resonaattoreita käsittävä suodinrakenne ja järjestely
DE10058339A1 (de) 2000-11-24 2002-06-06 Infineon Technologies Ag Bulk-Acoustic-Wave-Filter
JP3979073B2 (ja) 2000-12-06 2007-09-19 株式会社村田製作所 圧電共振子、圧電フィルタおよびデュプレクサ
US6424237B1 (en) * 2000-12-21 2002-07-23 Agilent Technologies, Inc. Bulk acoustic resonator perimeter reflection system
US6462631B2 (en) 2001-02-14 2002-10-08 Agilent Technologies, Inc. Passband filter having an asymmetrical filter response
US6828713B2 (en) * 2002-07-30 2004-12-07 Agilent Technologies, Inc Resonator with seed layer

Also Published As

Publication number Publication date
US20040056735A1 (en) 2004-03-25
DE60336617D1 (de) 2011-05-19
EP1755216A2 (de) 2007-02-21
ATE555544T1 (de) 2012-05-15
JP3879643B2 (ja) 2007-02-14
EP1755216B1 (de) 2012-04-25
CN1322671C (zh) 2007-06-20
US7161447B2 (en) 2007-01-09
EP1406386B1 (de) 2011-04-06
EP1406386A3 (de) 2006-03-29
EP1755216A3 (de) 2007-02-28
KR20040027353A (ko) 2004-04-01
CN1497842A (zh) 2004-05-19
KR100550086B1 (ko) 2006-02-08
JP2004120219A (ja) 2004-04-15
EP1406386A2 (de) 2004-04-07

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