JP6185292B2 - 弾性波デバイス - Google Patents
弾性波デバイス Download PDFInfo
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- JP6185292B2 JP6185292B2 JP2013122085A JP2013122085A JP6185292B2 JP 6185292 B2 JP6185292 B2 JP 6185292B2 JP 2013122085 A JP2013122085 A JP 2013122085A JP 2013122085 A JP2013122085 A JP 2013122085A JP 6185292 B2 JP6185292 B2 JP 6185292B2
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- 239000000758 substrate Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 3
- 230000001902 propagating effect Effects 0.000 claims description 3
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 342
- 239000010409 thin film Substances 0.000 description 50
- 238000000034 method Methods 0.000 description 28
- 230000008878 coupling Effects 0.000 description 17
- 238000010168 coupling process Methods 0.000 description 17
- 238000005859 coupling reaction Methods 0.000 description 17
- 238000005530 etching Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000005259 measurement Methods 0.000 description 12
- 239000011651 chromium Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 238000004088 simulation Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 229910020177 SiOF Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
Description
12 付加膜
14 温度補償膜
16 下部電極
18 圧電膜
20 上部電極
30 空隙
32 共振領域
40a 音響インピーダンスの低い膜
40b 音響インピーダンスの高い膜
42 音響反射膜
Claims (13)
- 基板上に設けられた圧電膜と、
前記圧電膜を挟んで対向した下部電極および上部電極と、
前記下部電極と前記上部電極とが前記圧電膜を挟んで対向する共振領域内で前記下部電極の前記圧電膜に対して反対側の面に設けられ、前記圧電膜の弾性定数の温度係数とは逆符号の温度係数の弾性定数を有する温度補償膜と、
前記共振領域内で前記温度補償膜の前記圧電膜に対して反対側の面に設けられ、前記温度補償膜よりも高い音響インピーダンスを有する付加膜と、を備え、
前記共振領域において前記付加膜の下に空隙が設けられている、弾性波デバイス。 - 前記温度補償膜は絶縁膜からなり、
前記付加膜は金属膜からなり、
前記付加膜と前記下部電極は接していない、請求項1記載の弾性波デバイス。 - 基板上に設けられた圧電膜と、
前記圧電膜を挟んで対向した下部電極および上部電極と、
前記下部電極と前記上部電極とが前記圧電膜を挟んで対向する共振領域内で前記上部電極の前記圧電膜に対して反対側の面に設けられ、前記圧電膜の弾性定数の温度係数とは逆符号の温度係数の弾性定数を有する絶縁膜からなる温度補償膜と、
前記共振領域内で前記温度補償膜の前記圧電膜に対して反対側の面に設けられ、前記温度補償膜よりも高い音響インピーダンスを有する金属膜からなる付加膜と、を備え、
前記付加膜と前記上部電極とは接していない、弾性波デバイス。 - 前記共振領域において前記下部電極の下に空隙が設けられている、請求項3記載の弾性波デバイス。
- 前記共振領域において前記下部電極の下に前記圧電膜を伝搬する弾性波を反射する音響反射膜が設けられている、請求項3記載の弾性波デバイス。
- 前記下部電極および前記上部電極のうちの前記付加膜が設けられた側の電極の単位面積当たりの質量は、前記付加膜の単位面積当たりの質量よりも重い、請求項1から5のいずれか一項記載の弾性波デバイス。
- 前記付加膜は、前記下部電極および前記上部電極と同じ材料を含む、請求項1から6のいずれか一項記載の弾性波デバイス。
- 前記下部電極および前記上部電極のうちの前記付加膜が設けられた側の電極は、前記付加膜よりも厚い、請求項7記載の弾性波デバイス。
- 前記付加膜は、絶縁材料からなる、請求項1記載の弾性波デバイス。
- 前記温度補償膜および前記付加膜は、前記共振領域の全体を覆って設けられている、請求項1から9のいずれか一項記載の弾性波デバイス。
- 前記温度補償膜は、前記共振領域から前記圧電膜の下面を覆うように延在している、請求項1または2記載の弾性波デバイス。
- 前記温度補償膜は、酸化シリコン、窒化シリコン、または酸化ゲルマニウムを主成分とする絶縁膜である、請求項1から11のいずれか一項記載の弾性波デバイス。
- 前記圧電膜は、窒化アルミニウムを主成分とする、請求項1から12のいずれか一項記載の弾性波デバイス。
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JP2013122085A JP6185292B2 (ja) | 2013-06-10 | 2013-06-10 | 弾性波デバイス |
US14/275,597 US9929715B2 (en) | 2013-06-10 | 2014-05-12 | Acoustic wave device |
CN201410255261.8A CN104242862B (zh) | 2013-06-10 | 2014-06-10 | 声波装置 |
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JP2013122085A JP6185292B2 (ja) | 2013-06-10 | 2013-06-10 | 弾性波デバイス |
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JP2014239392A JP2014239392A (ja) | 2014-12-18 |
JP6185292B2 true JP6185292B2 (ja) | 2017-08-23 |
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US (1) | US9929715B2 (ja) |
JP (1) | JP6185292B2 (ja) |
CN (1) | CN104242862B (ja) |
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US9621126B2 (en) * | 2014-10-22 | 2017-04-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator device including temperature compensation structure comprising low acoustic impedance layer |
JP6725058B2 (ja) * | 2017-03-09 | 2020-07-15 | 株式会社村田製作所 | 弾性波装置、高周波フロントエンド回路及び通信装置 |
WO2019108758A1 (en) * | 2017-12-01 | 2019-06-06 | Skyworks Solutions, Inc. | Alternative temperature compensating materials to amorhphous silica in acoustic wave resonators |
KR102109884B1 (ko) * | 2018-05-17 | 2020-05-12 | 삼성전기주식회사 | 체적 음향 공진기 및 이의 제조방법 |
CN110957989B (zh) * | 2018-09-26 | 2024-01-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | 薄膜体声波谐振器及其制作方法 |
JP7385996B2 (ja) * | 2019-02-28 | 2023-11-24 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
KR102338022B1 (ko) * | 2019-08-19 | 2021-12-10 | (주)와이솔 | 에어갭형 fbar |
CN110708035B (zh) * | 2019-10-21 | 2022-04-01 | 中国电子科技集团公司第二十六研究所 | 温度补偿型声表面波器件的温补层上表层表面波抑制方法 |
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JP2013038471A (ja) | 2011-08-03 | 2013-02-21 | Taiyo Yuden Co Ltd | 弾性波フィルタ |
JP5792554B2 (ja) | 2011-08-09 | 2015-10-14 | 太陽誘電株式会社 | 弾性波デバイス |
KR101919118B1 (ko) * | 2012-01-18 | 2018-11-15 | 삼성전자주식회사 | 체적 음향 공진기 |
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2013
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CN104242862A (zh) | 2014-12-24 |
CN104242862B (zh) | 2018-05-01 |
US9929715B2 (en) | 2018-03-27 |
US20140361664A1 (en) | 2014-12-11 |
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