JP5588889B2 - 弾性波デバイスおよびフィルタ - Google Patents
弾性波デバイスおよびフィルタ Download PDFInfo
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- JP5588889B2 JP5588889B2 JP2011025488A JP2011025488A JP5588889B2 JP 5588889 B2 JP5588889 B2 JP 5588889B2 JP 2011025488 A JP2011025488 A JP 2011025488A JP 2011025488 A JP2011025488 A JP 2011025488A JP 5588889 B2 JP5588889 B2 JP 5588889B2
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- 239000000758 substrate Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 7
- 230000000295 complement effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 149
- 230000000052 comparative effect Effects 0.000 description 34
- 239000010410 layer Substances 0.000 description 31
- 238000012986 modification Methods 0.000 description 19
- 230000004048 modification Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- 239000011651 chromium Substances 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- -1 or Ir Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0442—Modification of the thickness of an element of a non-piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/045—Modification of the area of an element
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
12 下部電極
14 圧電薄膜
16 上部電極
16a Ru層
16b Cr層
18 積層膜
20 質量負荷膜
24 周波数調整膜
28 質量負荷膜
32 第1パターン
34 第2パターン
50 共振領域
Claims (12)
- 基板と、
前記基板上に設けられた圧電膜と、
前記圧電膜の少なくとも一部を挟んで設けられた下部電極および上部電極と、
前記圧電膜を挟み前記下部電極および上部電極が対向する共振領域内に、間を空けて配列された複数の第1パターンと前記複数の第1パターンを連結する第2パターンとで構成された質量負荷膜と、
を具備し、
前記第2パターンの幅は、前記複数の第1パターンの幅より小さく、
前記共振領域内の前記複数の第1パターンと前記第2パターンとは、連結された1つのパターンで形成されるとともに、前記共振領域内の前記複数の第1パターンと前記第2パターンとの相補的パターンは、連結された1つのパターンで形成され、
前記複数の第1パターンのうち隣接する第1パターンは1つの前記第2パターンによって連結されることを特徴とする弾性波デバイス。 - 前記複数の第1パターンは周期的に配置されていることを特徴とする請求項1記載の弾性波デバイス。
- 前記複数の第1パターンは同一形状であることを特徴とする請求項1または2記載の弾性波デバイス。
- 前記第2パターンの幅は同じであることを特徴とする請求項1から3のいずれか一項記載の弾性波デバイス。
- 前記複数の第1パターンおよび第2パターンは、前記質量負荷膜が形成されたパターンであることを特徴とする請求項1から4のいずれか一項記載の弾性波デバイス。
- 前記第1パターンおよび前記第2パターンは、前記質量負荷膜に形成された開口から形成されたパターンであることを特徴とする請求項1から4のいずれか一項記載の弾性波デバイス。
- 前記質量負荷膜は、前記下部電極または前記上部電極を構成する材料とは異なる材料により構成されることを特徴とする請求項1から6のいずれか一項記載の弾性波デバイス。
- 前記質量負荷膜は、複数の層に形成されていることを特徴とする請求項1から7のいずれか一項記載の弾性波デバイス。
- 前記下部電極は、前記基板の平坦主面との間にドーム状の空隙を有するように形成されていることを特徴とする請求項1から8のいずれか一項記載の弾性波デバイス。
- 請求項1から9のいずれか一項記載の弾性波デバイスを備えるフィルタ。
- 前記弾性波デバイスは複数の共振器を含み、
前記複数の共振器のうち少なくとも2つの共振器において、前記第1パターンおよび前記第2パターンが前記共振領域を占める割合が異なることを特徴とする請求項10記載のフィルタ。 - 前記少なくとも2つの共振器において、前記質量負荷膜の膜厚が同じであることを特徴とする請求項11記載のフィルタ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011025488A JP5588889B2 (ja) | 2011-02-08 | 2011-02-08 | 弾性波デバイスおよびフィルタ |
SG2012006482A SG183611A1 (en) | 2011-02-08 | 2012-01-30 | Acoustic wave device and filter |
US13/362,753 US9013250B2 (en) | 2011-02-08 | 2012-01-31 | Acoustic wave device and filter |
CN201210027528.9A CN102638244B (zh) | 2011-02-08 | 2012-02-08 | 声波器件和滤波器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011025488A JP5588889B2 (ja) | 2011-02-08 | 2011-02-08 | 弾性波デバイスおよびフィルタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012165288A JP2012165288A (ja) | 2012-08-30 |
JP5588889B2 true JP5588889B2 (ja) | 2014-09-10 |
Family
ID=46600264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011025488A Active JP5588889B2 (ja) | 2011-02-08 | 2011-02-08 | 弾性波デバイスおよびフィルタ |
Country Status (4)
Country | Link |
---|---|
US (1) | US9013250B2 (ja) |
JP (1) | JP5588889B2 (ja) |
CN (1) | CN102638244B (ja) |
SG (1) | SG183611A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014135568A (ja) | 2013-01-08 | 2014-07-24 | Chiba Univ | 圧電薄膜共振器およびフィルタ |
JP6185292B2 (ja) * | 2013-06-10 | 2017-08-23 | 太陽誘電株式会社 | 弾性波デバイス |
JP6556099B2 (ja) * | 2016-06-16 | 2019-08-07 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
US11476826B2 (en) * | 2017-01-17 | 2022-10-18 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator |
US11228299B2 (en) * | 2017-02-02 | 2022-01-18 | Taiyo Yuden Co., Ltd. | Piezoelectric thin film resonator with insertion film, filter, and multiplexer |
CN107317565B (zh) * | 2017-06-02 | 2023-06-30 | 四川省三台水晶电子有限公司 | Baw梯形滤波器的布局设计方法 |
CN108173528A (zh) * | 2018-02-01 | 2018-06-15 | 湖北宙讯科技有限公司 | 滤波器 |
US12009803B2 (en) * | 2019-04-04 | 2024-06-11 | Ningbo Semiconductor International Corporation | Bulk acoustic wave resonator, filter and radio frequency communication system |
Family Cites Families (19)
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WO1999059244A2 (de) * | 1998-05-08 | 1999-11-18 | Infineon Technologies Ag | Dünnfilm-piezoresonator |
JP3858639B2 (ja) * | 2000-08-31 | 2006-12-20 | 株式会社村田製作所 | 圧電共振子および電子機器 |
US6617249B2 (en) | 2001-03-05 | 2003-09-09 | Agilent Technologies, Inc. | Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method |
JP4184220B2 (ja) | 2003-10-01 | 2008-11-19 | 富士通メディアデバイス株式会社 | 弾性表面波デバイス |
US20050248420A1 (en) | 2004-05-07 | 2005-11-10 | Qing Ma | Forming integrated plural frequency band film bulk acoustic resonators |
JP2006319796A (ja) * | 2005-05-13 | 2006-11-24 | Toshiba Corp | 薄膜バルク波音響共振器 |
JPWO2007000929A1 (ja) * | 2005-06-29 | 2009-01-22 | パナソニック株式会社 | 圧電共振器、圧電フィルタ、それを用いた共用器及び通信機器 |
JP4838093B2 (ja) | 2006-10-25 | 2011-12-14 | 太陽誘電株式会社 | 圧電薄膜共振器およびフィルタ |
JP4870541B2 (ja) * | 2006-12-15 | 2012-02-08 | 太陽誘電株式会社 | 圧電薄膜共振器およびフィルタ |
JP2008172494A (ja) | 2007-01-11 | 2008-07-24 | Fujitsu Media Device Kk | 圧電薄膜共振器、弾性波デバイスおよび弾性波デバイスの製造方法。 |
JP2008244653A (ja) * | 2007-03-26 | 2008-10-09 | Tdk Corp | 薄膜バルク波共振器の製造方法 |
JP2009027554A (ja) * | 2007-07-20 | 2009-02-05 | Nippon Dempa Kogyo Co Ltd | 薄膜バルク波共振器及び電子部品 |
JP2009124583A (ja) * | 2007-11-16 | 2009-06-04 | Murata Mfg Co Ltd | 圧電振動装置 |
US7777596B2 (en) * | 2007-12-18 | 2010-08-17 | Robert Bosch Gmbh | MEMS resonator structure and method |
JP5563739B2 (ja) | 2008-02-20 | 2014-07-30 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタ、デュープレクサ、通信モジュール、および通信装置 |
JP5184179B2 (ja) * | 2008-03-28 | 2013-04-17 | 京セラ株式会社 | 薄膜共振子、フィルタおよびデュプレクサ |
JP4638530B2 (ja) | 2008-08-19 | 2011-02-23 | 日本電波工業株式会社 | 圧電部品及びその製造方法 |
WO2010061479A1 (ja) * | 2008-11-28 | 2010-06-03 | 富士通株式会社 | 弾性波デバイス、およびその製造方法 |
US20100277034A1 (en) * | 2009-03-11 | 2010-11-04 | Rajarishi Sinha | Array of baw resonators with mask controlled resonant frequencies |
-
2011
- 2011-02-08 JP JP2011025488A patent/JP5588889B2/ja active Active
-
2012
- 2012-01-30 SG SG2012006482A patent/SG183611A1/en unknown
- 2012-01-31 US US13/362,753 patent/US9013250B2/en active Active
- 2012-02-08 CN CN201210027528.9A patent/CN102638244B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20120200373A1 (en) | 2012-08-09 |
CN102638244A (zh) | 2012-08-15 |
CN102638244B (zh) | 2016-03-16 |
JP2012165288A (ja) | 2012-08-30 |
US9013250B2 (en) | 2015-04-21 |
SG183611A1 (en) | 2012-09-27 |
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