JP2008172494A - 圧電薄膜共振器、弾性波デバイスおよび弾性波デバイスの製造方法。 - Google Patents
圧電薄膜共振器、弾性波デバイスおよび弾性波デバイスの製造方法。 Download PDFInfo
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- JP2008172494A JP2008172494A JP2007003357A JP2007003357A JP2008172494A JP 2008172494 A JP2008172494 A JP 2008172494A JP 2007003357 A JP2007003357 A JP 2007003357A JP 2007003357 A JP2007003357 A JP 2007003357A JP 2008172494 A JP2008172494 A JP 2008172494A
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- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】本発明は、基板11と、基板11上に設けられた下部電極10と、下部電極10上に設けられた圧電膜12と、圧電膜12を挟み下部電極10と対向する共振部16を有するように圧電膜12上に設けられた上部電極14と、上部電極14上に設けられた質量負荷膜18と、を有し、質量負荷膜18は共振部16に設けられ、質量負荷膜18の面積は共振部16の面積より小さい圧電薄膜共振器を具備する弾性波デバイスである。
【選択図】 図4
Description
11 基板
12 圧電膜
14 上部電極
16 共振部
18 質量負荷膜
22 入力端子
24 出力端子
Claims (11)
- 基板上に設けられた下部電極と、
前記下部電極上に設けられた圧電膜と、
前記圧電膜を挟み前記下部電極と対向する共振部を有するように前記圧電膜上に設けられた上部電極と、
前記上部電極上に設けられた質量負荷膜と、を具備し、
前記質量負荷膜は前記共振部内に設けられ、前記質量負荷膜の面積が前記共振部の面積より小さいことを特徴とする圧電薄膜共振器。 - 前記質量負荷膜の形状は前記共振部に相似した形状であることを特徴とする請求項1記載の圧電薄膜共振器。
- 前記質量負荷膜の形状はリングの形状であることを特徴とする請求項1記載の圧電薄膜共振器。
- 前記質量負荷膜の形状は複数のパターンからなる形状であることを特徴とする請求項1記載の圧電薄膜共振器。
- 前記質量負荷膜の形状は穴開きの形状であることを特徴とする請求項1記載の圧電薄膜共振器。
- 請求項1から5のいずれか一項記載の圧電薄膜共振器を具備することを特徴とする弾性波デバイス。
- 前記質量負荷膜の面積がそれぞれ異なる2以上の前記圧電薄膜共振器を具備することを特徴とする請求項6記載の弾性波デバイス。
- 前記質量負荷膜の面積が前記共振部の面積と同じである圧電薄膜共振器を具備することを特徴とする請求項6または7記載の弾性波デバイス。
- 前記弾性波デバイスはラダー型フィルタあるいはラティス型フィルタであることを特徴とする請求項6から8のいずれか一項記載の弾性波デバイス。
- 圧電膜を挟み下部電極と上部電極とが対向する共振部を複数形成する工程と、
複数の前記共振部それぞれに面積の異なる質量負荷膜を同時に形成する工程と、を有することを特徴とする弾性波デバイスの製造方法。 - 前記質量負荷膜を同時に形成する工程は、前記質量負荷膜のパターンに対応する複数の異なるパターンを有するマスクを用いることにより、前記質量負荷膜を同時に形成する工程であることを特徴とする請求項10記載の弾性波デバイスの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007003357A JP2008172494A (ja) | 2007-01-11 | 2007-01-11 | 圧電薄膜共振器、弾性波デバイスおよび弾性波デバイスの製造方法。 |
US11/972,316 US20080169885A1 (en) | 2007-01-11 | 2008-01-10 | Piezoelectric thin-film resonator, acoustic wave device and method for fabricating the acoustic wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2007003357A JP2008172494A (ja) | 2007-01-11 | 2007-01-11 | 圧電薄膜共振器、弾性波デバイスおよび弾性波デバイスの製造方法。 |
Publications (1)
Publication Number | Publication Date |
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JP2008172494A true JP2008172494A (ja) | 2008-07-24 |
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JP2007003357A Pending JP2008172494A (ja) | 2007-01-11 | 2007-01-11 | 圧電薄膜共振器、弾性波デバイスおよび弾性波デバイスの製造方法。 |
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US (1) | US20080169885A1 (ja) |
JP (1) | JP2008172494A (ja) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009124583A (ja) * | 2007-11-16 | 2009-06-04 | Murata Mfg Co Ltd | 圧電振動装置 |
WO2010061479A1 (ja) * | 2008-11-28 | 2010-06-03 | 富士通株式会社 | 弾性波デバイス、およびその製造方法 |
WO2011021461A1 (ja) * | 2009-08-17 | 2011-02-24 | 太陽誘電株式会社 | 弾性波デバイスおよびその製造方法 |
WO2011036995A1 (ja) * | 2009-09-28 | 2011-03-31 | 太陽誘電株式会社 | 弾性波デバイス |
JP2011071913A (ja) * | 2009-09-28 | 2011-04-07 | Taiyo Yuden Co Ltd | 弾性波デバイス |
JP2011082817A (ja) * | 2009-10-07 | 2011-04-21 | Taiyo Yuden Co Ltd | 弾性波デバイス、フィルタ、通信モジュール、通信装置 |
WO2011086986A1 (ja) * | 2010-01-14 | 2011-07-21 | 太陽誘電株式会社 | 弾性波デバイス、フィルタ、通信モジュール、通信装置 |
WO2011099319A1 (ja) * | 2010-02-10 | 2011-08-18 | 太陽誘電株式会社 | 圧電薄膜共振子、通信モジュール、通信装置 |
WO2011105313A1 (ja) * | 2010-02-24 | 2011-09-01 | 太陽誘電株式会社 | 弾性波デバイス |
JP2012124648A (ja) * | 2010-12-07 | 2012-06-28 | Murata Mfg Co Ltd | 圧電デバイス及びその製造方法 |
JP2012165288A (ja) * | 2011-02-08 | 2012-08-30 | Taiyo Yuden Co Ltd | 弾性波デバイスおよびフィルタ |
JP2014096833A (ja) * | 2014-01-07 | 2014-05-22 | Taiyo Yuden Co Ltd | 弾性波デバイス |
JP2017041709A (ja) * | 2015-08-18 | 2017-02-23 | 太陽誘電株式会社 | 弾性波フィルタ、分波器、及びモジュール |
JPWO2018235339A1 (ja) * | 2017-06-20 | 2020-05-21 | 株式会社村田製作所 | 共振子及び共振装置 |
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JP2013038471A (ja) * | 2011-08-03 | 2013-02-21 | Taiyo Yuden Co Ltd | 弾性波フィルタ |
JP2014135568A (ja) * | 2013-01-08 | 2014-07-24 | Chiba Univ | 圧電薄膜共振器およびフィルタ |
US10490728B2 (en) * | 2016-04-15 | 2019-11-26 | Globalfoundries Singapore Pte. Ltd. | Fabrication methods for a piezoelectric micro-electromechanical system (MEMS) |
US10784833B2 (en) * | 2017-04-04 | 2020-09-22 | Vanguard International Semiconductor Singapore Pte. Ltd. | Lamb acoustic wave resonator and filter with self-aligned cavity via |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57148916U (ja) * | 1981-03-14 | 1982-09-18 | ||
JPH031710A (ja) * | 1989-05-30 | 1991-01-08 | Kinseki Ltd | 圧電振動子 |
JP2002515667A (ja) * | 1998-05-08 | 2002-05-28 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 薄膜圧電振動子 |
WO2005114836A1 (en) * | 2004-05-07 | 2005-12-01 | Intel Corporation | Forming integrated plural frequency band film bulk acoustic resonators |
WO2007000929A1 (ja) * | 2005-06-29 | 2007-01-04 | Matsushita Electric Industrial Co., Ltd. | 圧電共振器、圧電フィルタ、それを用いた共用器及び通信機器 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6114795A (en) * | 1997-06-24 | 2000-09-05 | Tdk Corporation | Piezoelectric component and manufacturing method thereof |
FI107660B (fi) * | 1999-07-19 | 2001-09-14 | Nokia Mobile Phones Ltd | Resonaattorirakenne |
US6476536B1 (en) * | 2001-04-27 | 2002-11-05 | Nokia Corporation | Method of tuning BAW resonators |
DE10124349A1 (de) * | 2001-05-18 | 2002-12-05 | Infineon Technologies Ag | Piezoelektrische Resonatorvorrichtung mit Verstimmungsschichtfolge |
US7161448B2 (en) * | 2004-06-14 | 2007-01-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancements using recessed region |
US7280007B2 (en) * | 2004-11-15 | 2007-10-09 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Thin film bulk acoustic resonator with a mass loaded perimeter |
JP2006319796A (ja) * | 2005-05-13 | 2006-11-24 | Toshiba Corp | 薄膜バルク波音響共振器 |
-
2007
- 2007-01-11 JP JP2007003357A patent/JP2008172494A/ja active Pending
-
2008
- 2008-01-10 US US11/972,316 patent/US20080169885A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57148916U (ja) * | 1981-03-14 | 1982-09-18 | ||
JPH031710A (ja) * | 1989-05-30 | 1991-01-08 | Kinseki Ltd | 圧電振動子 |
JP2002515667A (ja) * | 1998-05-08 | 2002-05-28 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 薄膜圧電振動子 |
WO2005114836A1 (en) * | 2004-05-07 | 2005-12-01 | Intel Corporation | Forming integrated plural frequency band film bulk acoustic resonators |
WO2007000929A1 (ja) * | 2005-06-29 | 2007-01-04 | Matsushita Electric Industrial Co., Ltd. | 圧電共振器、圧電フィルタ、それを用いた共用器及び通信機器 |
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JPWO2010061479A1 (ja) * | 2008-11-28 | 2012-04-19 | 太陽誘電株式会社 | 弾性波デバイス、およびその製造方法 |
US8854158B2 (en) | 2008-11-28 | 2014-10-07 | Taiyo Yuden Co., Ltd. | Elastic wave device and method for manufacturing the same |
CN102160284A (zh) * | 2008-11-28 | 2011-08-17 | 富士通株式会社 | 弹性波器件及其制造方法 |
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JP2011041136A (ja) * | 2009-08-17 | 2011-02-24 | Taiyo Yuden Co Ltd | 弾性波デバイスおよびその製造方法 |
US8749320B2 (en) | 2009-08-17 | 2014-06-10 | Taiyo Yuden Co., Ltd. | Acoustic wave device and method for manufacturing the same |
US8941450B2 (en) | 2009-09-28 | 2015-01-27 | Taiyo Yuden Co., Ltd. | Acoustic wave device having a frequency control film |
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JP5689080B2 (ja) * | 2010-02-10 | 2015-03-25 | 太陽誘電株式会社 | 圧電薄膜共振子、通信モジュール、通信装置 |
JPWO2011099319A1 (ja) * | 2010-02-10 | 2013-06-13 | 太陽誘電株式会社 | 圧電薄膜共振子、通信モジュール、通信装置 |
US8531087B2 (en) | 2010-02-10 | 2013-09-10 | Taiyo Yuden Co., Ltd. | Piezoelectric thin-film resonator with distributed concave or convex patterns |
CN102754342A (zh) * | 2010-02-10 | 2012-10-24 | 太阳诱电株式会社 | 压电薄膜谐振器、通信模块、通信装置 |
WO2011099319A1 (ja) * | 2010-02-10 | 2011-08-18 | 太陽誘電株式会社 | 圧電薄膜共振子、通信モジュール、通信装置 |
JP2011176644A (ja) * | 2010-02-24 | 2011-09-08 | Taiyo Yuden Co Ltd | 弾性波デバイス |
WO2011105313A1 (ja) * | 2010-02-24 | 2011-09-01 | 太陽誘電株式会社 | 弾性波デバイス |
JP2012124648A (ja) * | 2010-12-07 | 2012-06-28 | Murata Mfg Co Ltd | 圧電デバイス及びその製造方法 |
US9013250B2 (en) | 2011-02-08 | 2015-04-21 | Taiyo Yuden Co., Ltd. | Acoustic wave device and filter |
JP2012165288A (ja) * | 2011-02-08 | 2012-08-30 | Taiyo Yuden Co Ltd | 弾性波デバイスおよびフィルタ |
JP2014096833A (ja) * | 2014-01-07 | 2014-05-22 | Taiyo Yuden Co Ltd | 弾性波デバイス |
JP2017041709A (ja) * | 2015-08-18 | 2017-02-23 | 太陽誘電株式会社 | 弾性波フィルタ、分波器、及びモジュール |
JPWO2018235339A1 (ja) * | 2017-06-20 | 2020-05-21 | 株式会社村田製作所 | 共振子及び共振装置 |
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