JP2011176644A - 弾性波デバイス - Google Patents
弾性波デバイス Download PDFInfo
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- JP2011176644A JP2011176644A JP2010039403A JP2010039403A JP2011176644A JP 2011176644 A JP2011176644 A JP 2011176644A JP 2010039403 A JP2010039403 A JP 2010039403A JP 2010039403 A JP2010039403 A JP 2010039403A JP 2011176644 A JP2011176644 A JP 2011176644A
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- film
- mass load
- load film
- piezoelectric thin
- thin film
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- 239000010408 film Substances 0.000 claims abstract description 290
- 239000010409 thin film Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 61
- 239000010410 layer Substances 0.000 description 38
- 238000010586 diagram Methods 0.000 description 27
- 239000011651 chromium Substances 0.000 description 19
- 238000005530 etching Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 238000004088 simulation Methods 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 7
- 238000007687 exposure technique Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
- H03H9/605—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/587—Air-gaps
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】基板10と、前記基板上に設けられた圧電薄膜14と、前記圧電薄膜の少なくとも一部を挟んで設けられた下部電極12および上部電極16と、前記圧電薄膜を挟み前記下部電極および上部電極が対向する共振領域50と、前記共振領域に複数の島パターンを備える第1質量負荷膜28と、前記共振領域に前記複数の島パターンに対応する位置にそれぞれ設けられた複数の開口パターンを備える第2質量負荷膜29と、を具備する弾性波デバイス。
【選択図】図2
Description
12 下部電極
14 圧電薄膜
16 上部電極
16a Ru層
16b Cr層
18 積層膜
20 第3質量負荷膜
24 周波数調整膜
28 第1質量負荷膜
29 第2質量負荷膜
50 共振領域
Claims (9)
- 基板と、
前記基板上に設けられた圧電薄膜と、
前記圧電薄膜の少なくとも一部を挟んで設けられた下部電極および上部電極と、
前記圧電薄膜を挟み前記下部電極および上部電極が対向する共振領域と、
前記共振領域に複数の島パターンを備える第1質量負荷膜と、
前記共振領域に前記複数の島パターンに対応する位置にそれぞれ設けられた複数の開口パターンを備える第2質量負荷膜と、
を具備することを特徴とする弾性波デバイス。 - 前記第1質量負荷膜および前記第2質量負荷膜は、前記圧電薄膜に対し、上側に設けられたことを特徴とする請求項1記載の弾性波デバイス。
- 前記第1質量負荷膜は、前記圧電薄膜に対し上下の一方に設けられ、前記第2質量負荷膜は前記圧電薄膜に対し上下の他方に設けられたことを特徴とする請求項1記載の弾性波デバイス。
- 前記複数の島パターンおよび前記複数の開口パターンは周期的に設けられていることを特徴とする請求項1から3のいずれか一項記載の弾性波デバイス。
- 前記複数の島パターンの中心と前記複数の開口パターンの中心はそれぞれ一致していることを特徴とする請求項1から4のいずれか一項記載の弾性波デバイス。
- 前記複数の島パターンと前記複数の開口パターンは同じ形状のパターンであることを特徴とする請求項1から5のいずれか一項記載の弾性波デバイス。
- 前記第1質量負荷膜と前記第2質量負荷膜との膜厚は同じであることを特徴とする請求項1から5のいずれか一項記載の弾性波デバイス。
- 前記第1質量負荷膜と前記第2質量負荷膜との被覆率は同じであることを特徴とする請求項1から7のいずれか一項記載の弾性波デバイス。
- 前記第1質量負荷膜の被覆率は、前記第2質量負荷膜の非被覆率と同じであることを特徴とする請求項1から7のいずれか一項記載の弾性波デバイス。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010039403A JP5390431B2 (ja) | 2010-02-24 | 2010-02-24 | 弾性波デバイス |
PCT/JP2011/053627 WO2011105313A1 (ja) | 2010-02-24 | 2011-02-21 | 弾性波デバイス |
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---|---|---|---|
JP2010039403A JP5390431B2 (ja) | 2010-02-24 | 2010-02-24 | 弾性波デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011176644A true JP2011176644A (ja) | 2011-09-08 |
JP5390431B2 JP5390431B2 (ja) | 2014-01-15 |
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JP2010039403A Active JP5390431B2 (ja) | 2010-02-24 | 2010-02-24 | 弾性波デバイス |
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JP (1) | JP5390431B2 (ja) |
WO (1) | WO2011105313A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013168748A (ja) * | 2012-02-14 | 2013-08-29 | Taiyo Yuden Co Ltd | 弾性波デバイス |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111193484A (zh) * | 2018-11-14 | 2020-05-22 | 天津大学 | 带粗糙面体声波谐振器、滤波器和电子设备 |
CN113497595B (zh) * | 2020-04-08 | 2023-06-23 | 诺思(天津)微系统有限责任公司 | 体声波谐振器组件及制造方法、滤波器及电子设备 |
CN111934643B (zh) * | 2020-07-13 | 2021-06-01 | 诺思(天津)微系统有限责任公司 | 压电层双侧设置质量负载的体声波谐振器、滤波器及电子设备 |
EP4200981A1 (en) * | 2020-09-14 | 2023-06-28 | Huawei Technologies Co., Ltd. | Solidly mounted bulk acoustic wave resonator with frequency tuning by mass loading in acoustic reflector and method of manufacturing thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005286945A (ja) * | 2004-03-31 | 2005-10-13 | Fujitsu Media Device Kk | 共振子、フィルタおよび共振子の製造 |
WO2007000929A1 (ja) * | 2005-06-29 | 2007-01-04 | Matsushita Electric Industrial Co., Ltd. | 圧電共振器、圧電フィルタ、それを用いた共用器及び通信機器 |
JP2008103798A (ja) * | 2006-10-17 | 2008-05-01 | Fujitsu Media Device Kk | ラダー型フィルタ |
JP2008172494A (ja) * | 2007-01-11 | 2008-07-24 | Fujitsu Media Device Kk | 圧電薄膜共振器、弾性波デバイスおよび弾性波デバイスの製造方法。 |
JP2009100367A (ja) * | 2007-10-18 | 2009-05-07 | Murata Mfg Co Ltd | 圧電振動装置 |
JP2009130478A (ja) * | 2007-11-21 | 2009-06-11 | Panasonic Corp | 圧電振動子およびその製造方法 |
-
2010
- 2010-02-24 JP JP2010039403A patent/JP5390431B2/ja active Active
-
2011
- 2011-02-21 WO PCT/JP2011/053627 patent/WO2011105313A1/ja active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005286945A (ja) * | 2004-03-31 | 2005-10-13 | Fujitsu Media Device Kk | 共振子、フィルタおよび共振子の製造 |
WO2007000929A1 (ja) * | 2005-06-29 | 2007-01-04 | Matsushita Electric Industrial Co., Ltd. | 圧電共振器、圧電フィルタ、それを用いた共用器及び通信機器 |
JP2008103798A (ja) * | 2006-10-17 | 2008-05-01 | Fujitsu Media Device Kk | ラダー型フィルタ |
JP2008172494A (ja) * | 2007-01-11 | 2008-07-24 | Fujitsu Media Device Kk | 圧電薄膜共振器、弾性波デバイスおよび弾性波デバイスの製造方法。 |
JP2009100367A (ja) * | 2007-10-18 | 2009-05-07 | Murata Mfg Co Ltd | 圧電振動装置 |
JP2009130478A (ja) * | 2007-11-21 | 2009-06-11 | Panasonic Corp | 圧電振動子およびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013168748A (ja) * | 2012-02-14 | 2013-08-29 | Taiyo Yuden Co Ltd | 弾性波デバイス |
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Publication number | Publication date |
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WO2011105313A1 (ja) | 2011-09-01 |
JP5390431B2 (ja) | 2014-01-15 |
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