JP2015139167A - 圧電薄膜共振器、フィルタおよびデュプレクサ - Google Patents
圧電薄膜共振器、フィルタおよびデュプレクサ Download PDFInfo
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- JP2015139167A JP2015139167A JP2014010791A JP2014010791A JP2015139167A JP 2015139167 A JP2015139167 A JP 2015139167A JP 2014010791 A JP2014010791 A JP 2014010791A JP 2014010791 A JP2014010791 A JP 2014010791A JP 2015139167 A JP2015139167 A JP 2015139167A
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】基板10と、前記基板上に設けられた圧電膜14と、前記圧電膜の少なくとも一部を挟んで対向した下部電極12および上部電極16と、前記圧電膜を挟み前記下部電極と前記上部電極とが対向する共振領域50内の前記圧電膜中に挿入され、前記共振領域内の外周領域52の少なくとも一部が前記共振領域の中央領域54より厚い挿入膜28と、を具備する圧電薄膜共振器。
【選択図】図1
Description
12 下部電極
14 圧電膜
16 上部電極
28 挿入膜
28a 薄膜部
28b 厚膜部
30 空隙
31 音響反射膜
50 共振領域
52 外周領域
54 中央領域
58 切欠き
Claims (9)
- 基板と、
前記基板上に設けられた圧電膜と、
前記圧電膜の少なくとも一部を挟んで対向した下部電極および上部電極と、
前記圧電膜を挟み前記下部電極と前記上部電極とが対向する共振領域内の前記圧電膜中に挿入され、前記共振領域内の外周領域の少なくとも一部が前記共振領域の中央領域より厚い挿入膜と、
を具備することを特徴とする圧電薄膜共振器。 - 前記中央領域内の前記挿入膜の弾性定数の温度係数は前記圧電膜の弾性定数の温度係数とは逆符号であることを特徴とする請求項1記載の圧電薄膜共振器。
- 前記外周領域内の前記挿入膜は、前記圧電膜のヤング率より小さい膜を含むことを特徴とする請求項1または2記載の圧電薄膜共振器。
- 前記挿入膜は、酸化シリコンを主成分とすることを特徴とする請求項1から3のいずれか一項記載の圧電薄膜共振器。
- 前記圧電膜は、窒化アルミニウムを主成分とすることを特徴とする請求項1から4のいずれか一項記載の圧電薄膜共振器。
- 前記共振領域において、前記基板と前記下部電極または前記下部電極に接する絶縁膜との間に空隙が形成されていることを特徴とする請求項1から5のいずれか一項記載の圧電薄膜共振器。
- 前記共振領域において、前記下部電極の前記圧電膜とは反対側に前記圧電膜を伝搬する弾性波を反射する音響反射膜を具備することを特徴とする請求項1から5のいずれか一項記載の圧電薄膜共振器。
- 請求項1から7のいずれか一項記載の圧電薄膜共振器を含むことを特徴とするフィルタ。
- 送信フィルタと受信フィルタとを具備し、
前記送信フィルタおよび前記受信フィルタの少なくとも一方が請求項8記載のフィルタであることを特徴とするデュプレクサ。
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JP2014010791A JP6302263B2 (ja) | 2014-01-23 | 2014-01-23 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
US14/599,364 US9531342B2 (en) | 2014-01-23 | 2015-01-16 | Piezoelectric thin film resonator, filter and duplexer |
CN201510034277.0A CN104811157B (zh) | 2014-01-23 | 2015-01-23 | 压电薄膜谐振器、滤波器和双工器 |
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JP2014010791A JP6302263B2 (ja) | 2014-01-23 | 2014-01-23 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
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JP2015139167A true JP2015139167A (ja) | 2015-07-30 |
JP6302263B2 JP6302263B2 (ja) | 2018-03-28 |
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US (1) | US9531342B2 (ja) |
JP (1) | JP6302263B2 (ja) |
CN (1) | CN104811157B (ja) |
Cited By (11)
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JP2017225042A (ja) * | 2016-06-16 | 2017-12-21 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
JP2018007230A (ja) * | 2016-07-07 | 2018-01-11 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 音響共振器及びその製造方法 |
JP2018125762A (ja) * | 2017-02-02 | 2018-08-09 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
JP2018125759A (ja) * | 2017-02-02 | 2018-08-09 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
KR20190004627A (ko) * | 2017-07-04 | 2019-01-14 | 삼성전기주식회사 | 음향 공진기 및 그 제조 방법 |
JP2020014088A (ja) * | 2018-07-17 | 2020-01-23 | 太陽誘電株式会社 | 弾性波共振器、フィルタ並びにマルチプレクサ |
CN111245400A (zh) * | 2019-12-04 | 2020-06-05 | 天津大学 | 具有桥部插入结构的体声波谐振器、滤波器和电子设备 |
JP2020178187A (ja) * | 2019-04-16 | 2020-10-29 | 太陽誘電株式会社 | 圧電薄膜共振器およびその製造方法、フィルタ並びにマルチプレクサ |
US11228299B2 (en) | 2017-02-02 | 2022-01-18 | Taiyo Yuden Co., Ltd. | Piezoelectric thin film resonator with insertion film, filter, and multiplexer |
WO2022183379A1 (zh) * | 2021-03-02 | 2022-09-09 | 天津大学 | 石英薄膜谐振器及其制造方法 |
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Cited By (16)
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JP2017225042A (ja) * | 2016-06-16 | 2017-12-21 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
US10432166B2 (en) | 2016-06-16 | 2019-10-01 | Taiyo Yuden Co., Ltd. | Piezoelectric thin film resonator, filter, and multiplexer |
US10720900B2 (en) | 2016-07-07 | 2020-07-21 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and method |
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JP2020014088A (ja) * | 2018-07-17 | 2020-01-23 | 太陽誘電株式会社 | 弾性波共振器、フィルタ並びにマルチプレクサ |
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JP7344011B2 (ja) | 2019-06-04 | 2023-09-13 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
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CN104811157B (zh) | 2017-12-08 |
US20150207490A1 (en) | 2015-07-23 |
CN104811157A (zh) | 2015-07-29 |
US9531342B2 (en) | 2016-12-27 |
JP6302263B2 (ja) | 2018-03-28 |
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