JP2018007230A - 音響共振器及びその製造方法 - Google Patents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
- H03H3/0077—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients by tuning of resonance frequency
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02023—Characteristics of piezoelectric layers, e.g. cutting angles consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
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Abstract
【解決手段】音響共振器は基板110と、基板上に順に積層された状態の下部電極121、圧電層123及び上部電極125を備える振動活性領域と、圧電層内に配置され、且つ、圧電層と異なる物性を有する水平共振抑制部140と、を含む。製造方法は、基板上に下部電極と圧電層を順に積層する段階と、圧電層にイオンを部分的に注入して圧電層内に水平共振抑制部を形成する段階と、圧電層上に上部電極を積層して振動活性領域を完成させる段階と、を含む。
【選択図】図1
Description
120 共振部
121 下部電極
123 圧電層
125 上部電極
130 エアギャップ
131 犠牲層
140 水平共振抑制部
150 メンブレン層
170 フレーム
Claims (16)
- 基板と、
前記基板上に順に積層された状態の下部電極、圧電層、及び上部電極を備える振動活性領域と、
前記圧電層内に配置され、且つ前記圧電層と異なる物性を有する水平共振抑制部と、
を含む、音響共振器。 - 前記水平共振抑制部は、一部または全体が前記振動活性領域内に配置される、請求項1に記載の音響共振器。
- 前記水平共振抑制部は、前記振動活性領域の外縁に沿って配置される、請求項2に記載の音響共振器。
- 前記水平共振抑制部は、厚さが互いに異なる第1水平共振抑制部と第2水平共振抑制部を含む、請求項1から請求項3の何れか一項に記載の音響共振器。
- 前記第1水平共振抑制部及び前記第2水平共振抑制部は、同一の物性で形成される、請求項4に記載の音響共振器。
- 前記水平共振抑制部は、前記振動活性領域の中心から前記振動活性領域の外縁に近づくほど厚みを増すように形成される、請求項1から請求項5の何れか一項に記載の音響共振器。
- 前記水平共振抑制部は、前記圧電層と同一の厚さで形成される、請求項1から請求項6の何れか一項に記載の音響共振器。
- 前記水平共振抑制部は、厚さが前記圧電層の厚さの半分以下で形成される、請求項1から請求項7の何れか一項に記載の音響共振器。
- 前記水平共振抑制部は、前記圧電層に比べて圧電性能が高い物性を有する、請求項1から請求項8の何れか一項に記載の音響共振器。
- 前記水平共振抑制部は、前記圧電層に比べて圧電性能が低い物性を有する、請求項1から請求項9の何れか一項に記載の音響共振器。
- 前記振動活性領域内に配置される前記水平共振抑制部の上部面の面積は、前記振動活性領域の上部面全体の面積の50%以下で形成される、請求項2に記載の音響共振器。
- 基板上に下部電極と圧電層を順に積層する段階と、
前記圧電層にイオンを部分的に注入して前記圧電層内に水平共振抑制部を形成する段階と、
前記圧電層上に上部電極を積層して振動活性領域を完成させる段階と、
を含む、音響共振器の製造方法。 - 前記水平共振抑制部は、一部または全体が前記振動活性領域内に形成される、請求項12に記載の音響共振器の製造方法。
- 前記水平共振抑制部を形成する段階は、厚さが互いに異なる第1水平共振抑制部と第2水平共振抑制部をそれぞれ形成する段階を含む、請求項12または請求項13に記載の音響共振器の製造方法。
- 前記水平共振抑制部を形成する段階は、AINで形成された前記圧電層にSc、Mg、Nb、Zr、及びHfのうちいずれか一つのイオンを注入して圧電層の一部の領域を置換する段階を含む、請求項12から請求項14の何れか一項に記載の音響共振器の製造方法。
- 前記水平共振抑制部を形成する段階は、AINで形成された前記圧電層にAr、O、B、P、及びNのうちいずれか一つのイオンを注入して前記圧電層の格子構造を破壊する段階を含む、請求項12から請求項15の何れか一項に記載の音響共振器の製造方法。
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KR10-2016-0086007 | 2016-07-07 | ||
KR20160086007 | 2016-07-07 | ||
KR10-2016-0102481 | 2016-08-11 | ||
KR1020160102481A KR20180006248A (ko) | 2016-07-07 | 2016-08-11 | 음향 공진기 및 그 제조 방법 |
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Cited By (7)
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JP2018125759A (ja) * | 2017-02-02 | 2018-08-09 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
JP2018148548A (ja) * | 2017-03-02 | 2018-09-20 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 音響共振器及びその製造方法 |
CN111817679A (zh) * | 2020-06-09 | 2020-10-23 | 杭州见闻录科技有限公司 | 一种薄膜体声波谐振器及其制作工艺 |
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