DE69739289D1 - Chtoberflächenwellenresonatoren - Google Patents

Chtoberflächenwellenresonatoren

Info

Publication number
DE69739289D1
DE69739289D1 DE69739289T DE69739289T DE69739289D1 DE 69739289 D1 DE69739289 D1 DE 69739289D1 DE 69739289 T DE69739289 T DE 69739289T DE 69739289 T DE69739289 T DE 69739289T DE 69739289 D1 DE69739289 D1 DE 69739289D1
Authority
DE
Germany
Prior art keywords
chtoberflächenwellenresonatoren
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69739289T
Other languages
English (en)
Inventor
Markku Ylilammi
Meeri Partanen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Avago Technologies Wireless IP Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avago Technologies Wireless IP Singapore Pte Ltd filed Critical Avago Technologies Wireless IP Singapore Pte Ltd
Application granted granted Critical
Publication of DE69739289D1 publication Critical patent/DE69739289D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49005—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
DE69739289T 1996-10-17 1997-09-12 Chtoberflächenwellenresonatoren Expired - Lifetime DE69739289D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US73446796A 1996-10-17 1996-10-17
PCT/US1997/016231 WO1998016956A1 (en) 1996-10-17 1997-09-12 Method for fabricating fbars on glass substrates

Publications (1)

Publication Number Publication Date
DE69739289D1 true DE69739289D1 (de) 2009-04-16

Family

ID=24951811

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69739289T Expired - Lifetime DE69739289D1 (de) 1996-10-17 1997-09-12 Chtoberflächenwellenresonatoren

Country Status (6)

Country Link
US (1) US6839946B2 (de)
EP (1) EP1012888B1 (de)
JP (1) JP2002509644A (de)
AU (1) AU4270097A (de)
DE (1) DE69739289D1 (de)
WO (1) WO1998016956A1 (de)

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US6060818A (en) * 1998-06-02 2000-05-09 Hewlett-Packard Company SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters
US7296329B1 (en) * 2000-02-04 2007-11-20 Agere Systems Inc. Method of isolation for acoustic resonator device
US6662419B2 (en) * 2001-12-17 2003-12-16 Intel Corporation Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss
JP2004304490A (ja) * 2003-03-31 2004-10-28 Tdk Corp 薄膜圧電共振子の製造方法、薄膜圧電共振子の製造装置、薄膜圧電共振子および電子部品
KR100489828B1 (ko) * 2003-04-07 2005-05-16 삼성전기주식회사 Ｆｂａｒ 소자 및 그 제조방법
US6904666B2 (en) * 2003-07-31 2005-06-14 Andrew Corporation Method of manufacturing microwave filter components and microwave filter components formed thereby
US7212082B2 (en) 2003-12-19 2007-05-01 Ube Industries, Ltd. Method of manufacturing piezoelectric thin film device and piezoelectric thin film device
JP3945486B2 (ja) 2004-02-18 2007-07-18 ソニー株式会社 薄膜バルク音響共振子およびその製造方法
JP4077805B2 (ja) 2004-04-23 2008-04-23 松下電器産業株式会社 共振器の製造方法
CN100568568C (zh) * 2004-04-23 2009-12-09 新加坡科技研究局 微机电装置
US20060017352A1 (en) * 2004-07-20 2006-01-26 Aram Tanielian Thin device and method of fabrication
JP2006060385A (ja) 2004-08-18 2006-03-02 Matsushita Electric Ind Co Ltd 共振器及びそれを用いるフィルタ
JP2006166419A (ja) * 2004-11-10 2006-06-22 Murata Mfg Co Ltd 圧電薄膜共振子及びその製造方法
US20060125577A1 (en) * 2004-12-13 2006-06-15 International Semiconductor Techonology Ltd. Acoustic resonator device and method for manufacturing the same
WO2006067949A1 (ja) * 2004-12-24 2006-06-29 Murata Manufacturing Co., Ltd. 圧電薄膜共振子およびその製造方法
JPWO2006134744A1 (ja) * 2005-06-17 2009-01-08 株式会社村田製作所 電子部品の製造方法
US7486003B1 (en) * 2005-09-22 2009-02-03 Sei-Joo Jang Polymer bulk acoustic resonator
US7362035B2 (en) * 2005-09-22 2008-04-22 The Penn State Research Foundation Polymer bulk acoustic resonator
WO2009011022A1 (ja) * 2007-07-13 2009-01-22 Fujitsu Limited 圧電薄膜共振素子及びこれを用いた回路部品
WO2011036979A1 (ja) * 2009-09-28 2011-03-31 太陽誘電株式会社 弾性波デバイス
US8692631B2 (en) * 2009-10-12 2014-04-08 Hao Zhang Bulk acoustic wave resonator and method of fabricating same
US8207453B2 (en) * 2009-12-17 2012-06-26 Intel Corporation Glass core substrate for integrated circuit devices and methods of making the same
US9420707B2 (en) * 2009-12-17 2016-08-16 Intel Corporation Substrate for integrated circuit devices including multi-layer glass core and methods of making the same
US8733149B2 (en) 2010-01-20 2014-05-27 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Film bulk acoustic wave resonator-based ethanol and acetone sensors and methods using the same
US8816567B2 (en) 2011-07-19 2014-08-26 Qualcomm Mems Technologies, Inc. Piezoelectric laterally vibrating resonator structure geometries for spurious frequency suppression
WO2013133827A1 (en) 2012-03-07 2013-09-12 Intel Corporation Glass clad microelectronic substrate
US9001520B2 (en) 2012-09-24 2015-04-07 Intel Corporation Microelectronic structures having laminated or embedded glass routing structures for high density packaging
US10622310B2 (en) 2012-09-26 2020-04-14 Ping-Jung Yang Method for fabricating glass substrate package
US9615453B2 (en) 2012-09-26 2017-04-04 Ping-Jung Yang Method for fabricating glass substrate package
CN104202010B (zh) * 2014-08-28 2017-05-03 中国工程物理研究院电子工程研究所 一种镂空空腔型薄膜体声波谐振器及其制作方法
RU2617890C2 (ru) * 2014-11-05 2017-04-28 Акционерное общество "Омский научно-исследовательский институт приборостроения" (АО "ОНИИП") Способ сглаживания поверхности пленки алюминия на диэлектрической подложке
US10069474B2 (en) * 2015-11-17 2018-09-04 Qualcomm Incorporated Encapsulation of acoustic resonator devices
US10135415B2 (en) * 2015-12-18 2018-11-20 Texas Instruments Incorporated Method to reduce frequency distribution of bulk acoustic wave resonators during manufacturing
US11476826B2 (en) 2017-01-17 2022-10-18 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator
US11437977B2 (en) * 2018-12-14 2022-09-06 Samsung Electro-Mechanics Co., Ltd. Bulk-acoustic resonator and elastic wave filter device
KR102272592B1 (ko) * 2019-01-31 2021-07-05 삼성전기주식회사 체적 음향 공진기
CN111554800B (zh) * 2020-04-23 2022-07-26 瑞声声学科技(深圳)有限公司 平坦化方法

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US3293557A (en) 1964-03-19 1966-12-20 Bell Telephone Labor Inc Elastic wave devices utilizing mixed crystals of potassium tantalatepotassium niobate
US3422371A (en) 1967-07-24 1969-01-14 Sanders Associates Inc Thin film piezoelectric oscillator
DE1566009A1 (de) 1967-08-26 1971-02-18 Telefunken Patent Mechanisches Frequenzfilter und Verfahren zu seiner Herstellung
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Also Published As

Publication number Publication date
JP2002509644A (ja) 2002-03-26
WO1998016956A1 (en) 1998-04-23
EP1012888B1 (de) 2009-03-04
US20030102773A1 (en) 2003-06-05
AU4270097A (en) 1998-05-11
EP1012888A1 (de) 2000-06-28
US6839946B2 (en) 2005-01-11
EP1012888A4 (de) 2001-08-08

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Legal Events

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8364 No opposition during term of opposition