DE69739289D1 - Chtoberflächenwellenresonatoren - Google Patents
ChtoberflächenwellenresonatorenInfo
- Publication number
- DE69739289D1 DE69739289D1 DE69739289T DE69739289T DE69739289D1 DE 69739289 D1 DE69739289 D1 DE 69739289D1 DE 69739289 T DE69739289 T DE 69739289T DE 69739289 T DE69739289 T DE 69739289T DE 69739289 D1 DE69739289 D1 DE 69739289D1
- Authority
- DE
- Germany
- Prior art keywords
- chtoberflächenwellenresonatoren
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73446796A | 1996-10-17 | 1996-10-17 | |
PCT/US1997/016231 WO1998016956A1 (en) | 1996-10-17 | 1997-09-12 | Method for fabricating fbars on glass substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69739289D1 true DE69739289D1 (de) | 2009-04-16 |
Family
ID=24951811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69739289T Expired - Lifetime DE69739289D1 (de) | 1996-10-17 | 1997-09-12 | Chtoberflächenwellenresonatoren |
Country Status (6)
Country | Link |
---|---|
US (1) | US6839946B2 (de) |
EP (1) | EP1012888B1 (de) |
JP (1) | JP2002509644A (de) |
AU (1) | AU4270097A (de) |
DE (1) | DE69739289D1 (de) |
WO (1) | WO1998016956A1 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6060818A (en) * | 1998-06-02 | 2000-05-09 | Hewlett-Packard Company | SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters |
US7296329B1 (en) * | 2000-02-04 | 2007-11-20 | Agere Systems Inc. | Method of isolation for acoustic resonator device |
US6662419B2 (en) * | 2001-12-17 | 2003-12-16 | Intel Corporation | Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss |
JP2004304490A (ja) * | 2003-03-31 | 2004-10-28 | Tdk Corp | 薄膜圧電共振子の製造方法、薄膜圧電共振子の製造装置、薄膜圧電共振子および電子部品 |
KR100489828B1 (ko) * | 2003-04-07 | 2005-05-16 | 삼성전기주식회사 | Fbar 소자 및 그 제조방법 |
US6904666B2 (en) * | 2003-07-31 | 2005-06-14 | Andrew Corporation | Method of manufacturing microwave filter components and microwave filter components formed thereby |
CN100546178C (zh) | 2003-12-19 | 2009-09-30 | 宇部兴产株式会社 | 制造压电薄膜器件的方法和压电薄膜器件 |
JP3945486B2 (ja) | 2004-02-18 | 2007-07-18 | ソニー株式会社 | 薄膜バルク音響共振子およびその製造方法 |
CN100568568C (zh) * | 2004-04-23 | 2009-12-09 | 新加坡科技研究局 | 微机电装置 |
JP4077805B2 (ja) | 2004-04-23 | 2008-04-23 | 松下電器産業株式会社 | 共振器の製造方法 |
US20060017352A1 (en) * | 2004-07-20 | 2006-01-26 | Aram Tanielian | Thin device and method of fabrication |
JP2006060385A (ja) | 2004-08-18 | 2006-03-02 | Matsushita Electric Ind Co Ltd | 共振器及びそれを用いるフィルタ |
JP2006166419A (ja) * | 2004-11-10 | 2006-06-22 | Murata Mfg Co Ltd | 圧電薄膜共振子及びその製造方法 |
US20060125577A1 (en) * | 2004-12-13 | 2006-06-15 | International Semiconductor Techonology Ltd. | Acoustic resonator device and method for manufacturing the same |
WO2006067949A1 (ja) * | 2004-12-24 | 2006-06-29 | Murata Manufacturing Co., Ltd. | 圧電薄膜共振子およびその製造方法 |
WO2006134744A1 (ja) * | 2005-06-17 | 2006-12-21 | Murata Manufacturing Co., Ltd. | 電子部品の製造方法 |
US7362035B2 (en) * | 2005-09-22 | 2008-04-22 | The Penn State Research Foundation | Polymer bulk acoustic resonator |
US7486003B1 (en) * | 2005-09-22 | 2009-02-03 | Sei-Joo Jang | Polymer bulk acoustic resonator |
WO2009011022A1 (ja) * | 2007-07-13 | 2009-01-22 | Fujitsu Limited | 圧電薄膜共振素子及びこれを用いた回路部品 |
WO2011036979A1 (ja) * | 2009-09-28 | 2011-03-31 | 太陽誘電株式会社 | 弾性波デバイス |
US8692631B2 (en) * | 2009-10-12 | 2014-04-08 | Hao Zhang | Bulk acoustic wave resonator and method of fabricating same |
US8207453B2 (en) | 2009-12-17 | 2012-06-26 | Intel Corporation | Glass core substrate for integrated circuit devices and methods of making the same |
US9420707B2 (en) | 2009-12-17 | 2016-08-16 | Intel Corporation | Substrate for integrated circuit devices including multi-layer glass core and methods of making the same |
WO2011091107A2 (en) * | 2010-01-20 | 2011-07-28 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Film bulk acoustic wave resonator-based ethanol and acetone sensors and methods using the same |
US8816567B2 (en) | 2011-07-19 | 2014-08-26 | Qualcomm Mems Technologies, Inc. | Piezoelectric laterally vibrating resonator structure geometries for spurious frequency suppression |
US9445496B2 (en) | 2012-03-07 | 2016-09-13 | Intel Corporation | Glass clad microelectronic substrate |
US9001520B2 (en) | 2012-09-24 | 2015-04-07 | Intel Corporation | Microelectronic structures having laminated or embedded glass routing structures for high density packaging |
US10622310B2 (en) | 2012-09-26 | 2020-04-14 | Ping-Jung Yang | Method for fabricating glass substrate package |
US9615453B2 (en) | 2012-09-26 | 2017-04-04 | Ping-Jung Yang | Method for fabricating glass substrate package |
CN104202010B (zh) * | 2014-08-28 | 2017-05-03 | 中国工程物理研究院电子工程研究所 | 一种镂空空腔型薄膜体声波谐振器及其制作方法 |
RU2617890C2 (ru) * | 2014-11-05 | 2017-04-28 | Акционерное общество "Омский научно-исследовательский институт приборостроения" (АО "ОНИИП") | Способ сглаживания поверхности пленки алюминия на диэлектрической подложке |
US10069474B2 (en) * | 2015-11-17 | 2018-09-04 | Qualcomm Incorporated | Encapsulation of acoustic resonator devices |
US10135415B2 (en) * | 2015-12-18 | 2018-11-20 | Texas Instruments Incorporated | Method to reduce frequency distribution of bulk acoustic wave resonators during manufacturing |
US11476826B2 (en) | 2017-01-17 | 2022-10-18 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator |
US11437977B2 (en) * | 2018-12-14 | 2022-09-06 | Samsung Electro-Mechanics Co., Ltd. | Bulk-acoustic resonator and elastic wave filter device |
KR102272592B1 (ko) * | 2019-01-31 | 2021-07-05 | 삼성전기주식회사 | 체적 음향 공진기 |
CN111554800B (zh) * | 2020-04-23 | 2022-07-26 | 瑞声声学科技(深圳)有限公司 | 平坦化方法 |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL277613A (de) | 1961-04-26 | 1900-01-01 | ||
US3293557A (en) | 1964-03-19 | 1966-12-20 | Bell Telephone Labor Inc | Elastic wave devices utilizing mixed crystals of potassium tantalatepotassium niobate |
US3422371A (en) | 1967-07-24 | 1969-01-14 | Sanders Associates Inc | Thin film piezoelectric oscillator |
DE1566009A1 (de) | 1967-08-26 | 1971-02-18 | Telefunken Patent | Mechanisches Frequenzfilter und Verfahren zu seiner Herstellung |
US3486046A (en) | 1968-10-17 | 1969-12-23 | Westinghouse Electric Corp | Thin film piezoelectric resonator |
US3696312A (en) | 1970-06-30 | 1972-10-03 | Ibm | Cyclotron resonance devices controllable by electric fields |
US3686579A (en) | 1971-06-21 | 1972-08-22 | Zenith Radio Corp | Solid-state, acoustic-wave amplifiers |
US3723920A (en) | 1971-06-24 | 1973-03-27 | Gte Automatic Electric Lab Inc | Crystal filter assembly |
FR2151727A5 (de) | 1971-09-10 | 1973-04-20 | Thomson Csf | |
FR2182295A5 (de) | 1972-04-25 | 1973-12-07 | Thomson Csf | |
SE384958B (sv) | 1974-07-19 | 1976-05-24 | Philips Svenska Ab | Sett for overforing av information i en transponderanleggning samt anordning for utforande av settet |
AT353506B (de) | 1976-10-19 | 1979-11-26 | List Hans | Piezoelektrischer resonator |
GB1592010A (en) | 1977-01-12 | 1981-07-01 | Suwa Seikosha Kk | Contour vibrator |
CH630747A5 (fr) | 1979-01-18 | 1982-06-30 | Ebauches Sa | Procede d'ajustement de la frequence d'un resonateur et resonateur a frequence ajustee obtenu par la mise en oeuvre de ce procede. |
JPS56100510A (en) | 1980-01-16 | 1981-08-12 | Clarion Co Ltd | Elastic surface wave device |
US4320365A (en) | 1980-11-03 | 1982-03-16 | United Technologies Corporation | Fundamental, longitudinal, thickness mode bulk wave resonator |
JPS58137317A (ja) | 1982-02-09 | 1983-08-15 | Nec Corp | 圧電薄膜複合振動子 |
CH661587A5 (de) * | 1983-03-29 | 1987-07-31 | Loepfe Ag Geb | Laengenmessvorrichtung fuer einen faden an einer fadenspulvorrichtung. |
US4502932A (en) | 1983-10-13 | 1985-03-05 | The United States Of America As Represented By The United States Department Of Energy | Acoustic resonator and method of making same |
US4556812A (en) | 1983-10-13 | 1985-12-03 | The United States Of America As Represented By The United States Department Of Energy | Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate |
JPS60189307A (ja) * | 1984-03-09 | 1985-09-26 | Toshiba Corp | 圧電薄膜共振器およびその製造方法 |
JPS6276913A (ja) | 1985-09-30 | 1987-04-09 | Toshiba Corp | 薄膜弾性波装置 |
US4897618A (en) | 1989-06-05 | 1990-01-30 | The Curran Company | Harmonic frequency selecting circuit |
US5162691A (en) * | 1991-01-22 | 1992-11-10 | The United States Of America As Represented By The Secretary Of The Army | Cantilevered air-gap type thin film piezoelectric resonator |
US5233259A (en) | 1991-02-19 | 1993-08-03 | Westinghouse Electric Corp. | Lateral field FBAR |
US5153476A (en) | 1991-03-11 | 1992-10-06 | The United States Of America As Represented By The Secretary Of The Army | Acoustic vibrator with variable sensitivity to external acceleration |
US5185589A (en) | 1991-05-17 | 1993-02-09 | Westinghouse Electric Corp. | Microwave film bulk acoustic resonator and manifolded filter bank |
US5166646A (en) | 1992-02-07 | 1992-11-24 | Motorola, Inc. | Integrated tunable resonators for use in oscillators and filters |
US5382930A (en) | 1992-12-21 | 1995-01-17 | Trw Inc. | Monolithic multipole filters made of thin film stacked crystal filters |
US5373268A (en) | 1993-02-01 | 1994-12-13 | Motorola, Inc. | Thin film resonator having stacked acoustic reflecting impedance matching layers and method |
US5619061A (en) * | 1993-07-27 | 1997-04-08 | Texas Instruments Incorporated | Micromechanical microwave switching |
US5332943A (en) | 1993-10-21 | 1994-07-26 | Bhardwaj Mahesh C | High temperature ultrasonic transducer device |
US5446306A (en) | 1993-12-13 | 1995-08-29 | Trw Inc. | Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR) |
US5587620A (en) | 1993-12-21 | 1996-12-24 | Hewlett-Packard Company | Tunable thin film acoustic resonators and method for making the same |
US5422533A (en) | 1994-03-09 | 1995-06-06 | The United States Of America As Represented By The Secretary Of The Army | Piezoelectric resonator |
US5629906A (en) | 1995-02-15 | 1997-05-13 | Hewlett-Packard Company | Ultrasonic transducer |
US5596239A (en) * | 1995-06-29 | 1997-01-21 | Motorola, Inc. | Enhanced quality factor resonator |
US5692279A (en) | 1995-08-17 | 1997-12-02 | Motorola | Method of making a monolithic thin film resonator lattice filter |
JP3609423B2 (ja) * | 1995-09-21 | 2005-01-12 | Tdk株式会社 | 弾性表面波装置及びその製造方法 |
US5646583A (en) | 1996-01-04 | 1997-07-08 | Rockwell International Corporation | Acoustic isolator having a high impedance layer of hafnium oxide |
US5714917A (en) * | 1996-10-02 | 1998-02-03 | Nokia Mobile Phones Limited | Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation |
-
1997
- 1997-09-12 JP JP51834498A patent/JP2002509644A/ja active Pending
- 1997-09-12 AU AU42700/97A patent/AU4270097A/en not_active Abandoned
- 1997-09-12 WO PCT/US1997/016231 patent/WO1998016956A1/en active Application Filing
- 1997-09-12 DE DE69739289T patent/DE69739289D1/de not_active Expired - Lifetime
- 1997-09-12 EP EP97941066A patent/EP1012888B1/de not_active Expired - Lifetime
-
2002
- 2002-10-22 US US10/278,612 patent/US6839946B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2002509644A (ja) | 2002-03-26 |
EP1012888A1 (de) | 2000-06-28 |
WO1998016956A1 (en) | 1998-04-23 |
US6839946B2 (en) | 2005-01-11 |
EP1012888A4 (de) | 2001-08-08 |
AU4270097A (en) | 1998-05-11 |
EP1012888B1 (de) | 2009-03-04 |
US20030102773A1 (en) | 2003-06-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |