JP2008211203A - ZnO系半導体素子 - Google Patents
ZnO系半導体素子 Download PDFInfo
- Publication number
- JP2008211203A JP2008211203A JP2008021953A JP2008021953A JP2008211203A JP 2008211203 A JP2008211203 A JP 2008211203A JP 2008021953 A JP2008021953 A JP 2008021953A JP 2008021953 A JP2008021953 A JP 2008021953A JP 2008211203 A JP2008211203 A JP 2008211203A
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- Prior art keywords
- zno
- based semiconductor
- semiconductor element
- electrode
- organic electrode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 165
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title description 245
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】ZnO系半導体1上に有機物電極2が形成されており、有機物電極2の上にはAu膜3が形成されている。ZnO系半導体1の裏面には有機物電極2に対向するように、Ti膜4とAu膜5の多層金属膜で構成された電極が形成されている。有機物電極2とZnO系半導体1との接合界面は、pn接合のような状態となっており、これらの間で整流作用が発生する。
【選択図】 図1
Description
ことができるが、酸化物は薄膜形成法がスパッタかPLD(パルスレーザーデポジション)などに限られており、半導体素子のような積層構造を作製しにくい。スパッタは通常結晶薄膜を得るのが難しく、PLDは基本的に点蒸発であるので、2インチ程度であっても大面積化が困難である。
2 有機物電極
3 Au膜
4 Ti膜
5 Au膜
6 基板
8 ZnO基板
9 p型MgZnO層
11 n型MgZnO層
Claims (19)
- ZnO系半導体に接して有機物電極が形成され、前記ZnO系半導体と有機物電極との間で整流特性を有することを特徴とするZnO系半導体素子。
- 前記有機物電極の仕事関数が前記ZnO系半導体の電子親和力よりも大きいことを特徴とする請求項1記載のZnO系半導体素子。
- 前記ZnO系半導体の有機物電極と接する側の主面が+C面であることを特徴とする請求項1又は請求項2のいずれか1項に記載のZnO系半導体素子。
- 前記有機物電極の法線は、前記主面の+c軸から少なくともm軸方向に傾斜していることを特徴とする請求項3記載のZnO系半導体素子。
- 前記有機物電極の法線の傾斜角度は5度以下であることを特徴とする請求項4記載のZnO系半導体素子。
- 前記ZnO系半導体の有機物電極と接する側の主面がM面又はA面であることを特徴とする請求項1又は請求項2のいずれか1項に記載のZnO系半導体素子。
- 前記有機物電極の法線は、前記主面のm軸又はa軸から少なくともc軸方向に傾斜していることを特徴とする請求項6記載のZnO系半導体素子。
- 前記有機物電極の少なくとも一部は導電性ポリマーで構成されていることを特徴とする請求項1〜請求項7のいずれか1項に記載のZnO系半導体素子。
- 前記有機物電極の抵抗率が1Ωcm以下であることを特徴とする請求項8記載のZnO系半導体素子。
- 前記導電性ポリマーは、ポリアニリン誘導体、ポリピロール誘導体、ポリチオフェン誘導体の中の少なくとも一種から構成されていることを特徴とする請求項8又は請求項9記載のZnO系半導体素子。
- 前記導電性ポリマーは、キャリアドーパントを含むポリアニリン誘導体、キャリアドーパントを含むポリピロール誘導体、キャリアドーパントを含むポリチオフェン誘導体の中の少なくとも一種から構成されていることを特徴とする請求項8又は請求項9記載のZnO系半導体素子。
- 前記有機物電極は、紫外光領域で透光性を有することを特徴とする請求項1〜請求項11のいずれか1項に記載のZnO系半導体素子。
- 前記有機物電極が正孔伝導体からなることを特徴とする請求項12記載のZnO系半導体素子。
- 前記ZnO系半導体素子の有機物電極側に負電圧を印加する逆バイアス状態で3ボルト印加し、光の照射がない状態で、逆方向電流が1ナノアンペア以下であることを特徴とする請求項12又は請求項13のいずれか1項に記載のZnO系半導体素子。
- 前記ZnO系半導体は、ZnO系基板のみで構成されていることを特徴とする請求項12〜請求項14のいずれか1項に記載のZnO系半導体素子。
- 前記ZnO系半導体素子は、フォトダイオードであることを特徴とする請求項12〜請求項15のいずれか1項に記載のZnO系半導体素子。
- 前記ZnO系半導体は、ZnO系基板上に少なくともZnO系薄膜が1層形成された積層体で構成され、前記有機物電極がショットキー型のゲート電極として作用し、トランジスタ機能を有することを特徴とする請求項1〜請求項11のいずれか1項に記載のZnO系半導体素子。
- 前記積層体は、ZnO系基板上にZnO系薄膜が2層以上積層されており、ZnO系基板に近い側からMgXZnO(0≦X<1)、MgYZnO(0<Y<1)の順に積層された薄膜積層構造(X<Y)を少なくとも1組は備えていることを特徴とする請求項17記載のZnO系半導体素子。
- 前記薄膜積層構造におけるMgXZnOとMgYZnOの界面に発生する電子蓄積領域をチャネル領域とする請求項17又は請求項18のいずれか1項に記載のZnO系半導体素子。
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KR1020097018358A KR20090118947A (ko) | 2007-02-02 | 2008-02-04 | ZnO계 반도체 소자 |
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- 2008-02-04 TW TW097104461A patent/TW200849668A/zh unknown
- 2008-02-04 US US12/525,537 patent/US20100102309A1/en not_active Abandoned
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