WO2008111188A1 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
WO2008111188A1
WO2008111188A1 PCT/JP2007/055053 JP2007055053W WO2008111188A1 WO 2008111188 A1 WO2008111188 A1 WO 2008111188A1 JP 2007055053 W JP2007055053 W JP 2007055053W WO 2008111188 A1 WO2008111188 A1 WO 2008111188A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductive film
semiconductor device
conductive
producing
same
Prior art date
Application number
PCT/JP2007/055053
Other languages
English (en)
French (fr)
Inventor
Wensheng Wang
Original Assignee
Fujitsu Microelectronics Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Microelectronics Limited filed Critical Fujitsu Microelectronics Limited
Priority to PCT/JP2007/055053 priority Critical patent/WO2008111188A1/ja
Priority to CN2007800521651A priority patent/CN101627470B/zh
Priority to JP2009503829A priority patent/JP5251864B2/ja
Publication of WO2008111188A1 publication Critical patent/WO2008111188A1/ja
Priority to US12/557,159 priority patent/US8067817B2/en
Priority to US13/280,397 priority patent/US8278181B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

　半導体基板上に形成された強誘電体キャパシタを有する半導体装置において、強誘電体キャパシタは、下部電極、強誘電体膜及び上部電極から構成され、その上部電極は、第１の導電性貴金属酸化物からなる第１導電膜と、前記第１導電膜の上に形成される金属窒化化合物からなる第２導電膜とを少なくとも含み、さらに、第１導電膜と第２導電膜の間に第２の導電性貴金属物からなる第３導電膜と貴金属からなる第４導電膜を挟んで構成される。
PCT/JP2007/055053 2007-03-14 2007-03-14 半導体装置及びその製造方法 WO2008111188A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/JP2007/055053 WO2008111188A1 (ja) 2007-03-14 2007-03-14 半導体装置及びその製造方法
CN2007800521651A CN101627470B (zh) 2007-03-14 2007-03-14 半导体器件及其制造方法
JP2009503829A JP5251864B2 (ja) 2007-03-14 2007-03-14 半導体装置及びその製造方法
US12/557,159 US8067817B2 (en) 2007-03-14 2009-09-10 Semiconductor device and method of manufacturing the same
US13/280,397 US8278181B2 (en) 2007-03-14 2011-10-25 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055053 WO2008111188A1 (ja) 2007-03-14 2007-03-14 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/557,159 Continuation US8067817B2 (en) 2007-03-14 2009-09-10 Semiconductor device and method of manufacturing the same

Publications (1)

Publication Number Publication Date
WO2008111188A1 true WO2008111188A1 (ja) 2008-09-18

Family

ID=39759139

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/055053 WO2008111188A1 (ja) 2007-03-14 2007-03-14 半導体装置及びその製造方法

Country Status (4)

Country Link
US (2) US8067817B2 (ja)
JP (1) JP5251864B2 (ja)
CN (1) CN101627470B (ja)
WO (1) WO2008111188A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010049859A1 (en) 2008-10-28 2010-05-06 Nxp B.V. 3d integration of a mim capacitor and a resistor
JP2011077226A (ja) * 2009-09-30 2011-04-14 Fujitsu Semiconductor Ltd 強誘電体キャパシタの製造方法
JP2015149354A (ja) * 2014-02-05 2015-08-20 富士通セミコンダクター株式会社 半導体装置及びその製造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9401471B2 (en) * 2010-09-15 2016-07-26 Ricoh Company, Ltd. Electromechanical transducing device and manufacturing method thereof, and liquid droplet discharging head and liquid droplet discharging apparatus
US20130214289A1 (en) * 2012-02-16 2013-08-22 Texas Instruments Incorporated Short-Resistant Metal-Gate MOS Transistor and Method of Forming the Transistor
US9659814B2 (en) 2013-02-01 2017-05-23 Applied Materials, Inc. Doping control of metal nitride films
US9105578B2 (en) * 2013-03-12 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
US9263275B2 (en) 2013-03-12 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
US9589974B2 (en) * 2013-09-11 2017-03-07 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method for manufacturing same
US10622070B2 (en) 2016-07-29 2020-04-14 AP Memory Corp, USA Ferroelectric memory device
US10109350B2 (en) * 2016-07-29 2018-10-23 AP Memory Corp., USA Ferroelectric memory device
US10861929B2 (en) * 2018-06-27 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Electronic device including a capacitor
US20230163129A1 (en) * 2021-11-22 2023-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor Gate Structures and Methods of Forming the Same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003258201A (ja) * 2002-02-28 2003-09-12 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976928A (en) * 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
US6534809B2 (en) * 1999-12-22 2003-03-18 Agilent Technologies, Inc. Hardmask designs for dry etching FeRAM capacitor stacks
JP3661850B2 (ja) 2001-04-25 2005-06-22 富士通株式会社 半導体装置およびその製造方法
JP2003017581A (ja) 2001-06-28 2003-01-17 Toshiba Corp 半導体装置及びその製造方法
JP3810349B2 (ja) 2001-07-18 2006-08-16 松下電器産業株式会社 半導体記憶装置及びその製造方法
JP2003152165A (ja) 2001-11-15 2003-05-23 Fujitsu Ltd 半導体装置およびその製造方法
JP4649899B2 (ja) 2004-07-13 2011-03-16 パナソニック株式会社 半導体記憶装置およびその製造方法
US20060073613A1 (en) * 2004-09-29 2006-04-06 Sanjeev Aggarwal Ferroelectric memory cells and methods for fabricating ferroelectric memory cells and ferroelectric capacitors thereof
US7220600B2 (en) 2004-12-17 2007-05-22 Texas Instruments Incorporated Ferroelectric capacitor stack etch cleaning methods
JP2007227500A (ja) * 2006-02-22 2007-09-06 Seiko Epson Corp 半導体記憶装置および半導体記憶装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003258201A (ja) * 2002-02-28 2003-09-12 Fujitsu Ltd 半導体装置の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010049859A1 (en) 2008-10-28 2010-05-06 Nxp B.V. 3d integration of a mim capacitor and a resistor
US8901705B2 (en) 2008-10-28 2014-12-02 Nxp, B.V. 3D integration of a MIM capacitor and a resistor
JP2011077226A (ja) * 2009-09-30 2011-04-14 Fujitsu Semiconductor Ltd 強誘電体キャパシタの製造方法
JP2015149354A (ja) * 2014-02-05 2015-08-20 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US9773794B2 (en) 2014-02-05 2017-09-26 Fujitsu Semiconductor Limited Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JPWO2008111188A1 (ja) 2010-06-24
US20120034712A1 (en) 2012-02-09
CN101627470B (zh) 2011-12-28
US8067817B2 (en) 2011-11-29
JP5251864B2 (ja) 2013-07-31
US20090321877A1 (en) 2009-12-31
CN101627470A (zh) 2010-01-13
US8278181B2 (en) 2012-10-02

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