KR100988143B1 - 반도체 발광 소자, 반도체 발광 소자의 제조 방법 및 램프 - Google Patents
반도체 발광 소자, 반도체 발광 소자의 제조 방법 및 램프 Download PDFInfo
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- KR100988143B1 KR100988143B1 KR1020087024670A KR20087024670A KR100988143B1 KR 100988143 B1 KR100988143 B1 KR 100988143B1 KR 1020087024670 A KR1020087024670 A KR 1020087024670A KR 20087024670 A KR20087024670 A KR 20087024670A KR 100988143 B1 KR100988143 B1 KR 100988143B1
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- light emitting
- semiconductor light
- izo film
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- emitting element
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
Description
온도 |
시트 저항[Ω/sq] | |
O2 함유 N2 분위기 | N2 분위기 | |
300℃ | 15 | 13 |
400℃ | 150 | 13 |
500℃ | 200 | 12 |
600℃ | 7×105 | 9 |
Claims (14)
- p형 반도체층을 포함하고, 적어도 자외 영역에 발광 파장을 갖는 반도체층과, 상기 p형 반도체층 상에 설치된 투광성 전극을 구비하고,상기 투광성 전극이 결정화된 IZO막을 포함하는 것을 특징으로 하는 반도체 발광 소자.
- 제1항에 있어서, 적어도 350㎚ 내지 420㎚에 발광 파장을 갖는 것을 특징으로 하는 반도체 발광 소자.
- 제1항 또는 제2항에 있어서, 상기 IZO막의 두께가 35㎚ 내지 10㎛인 것을 특징으로 하는 반도체 발광 소자.
- 제3항에 있어서, 상기 IZO막의 두께가 100㎚ 내지 1㎛인 것을 특징으로 하는 반도체 발광 소자.
- 제1항 또는 제2항에 있어서, 상기 IZO막 상에 보호층이 형성되어 있는 것을 특징으로 하는 반도체 발광 소자.
- 제1항 또는 제2항에 있어서, 상기 반도체층이 질화갈륨계 화합물 반도체층인 것을 특징으로 하는 반도체 발광 소자.
- p형 반도체층을 포함하고, 적어도 자외 영역에 발광 파장을 갖는 반도체층과, 상기 p형 반도체층 상에 설치되고, 결정화된 IZO막을 포함하는 투광성 전극을 구비하는 반도체 발광 소자의 제조 방법이며,상기 p형 반도체층 상에 아몰퍼스 상태의 IZO막을 형성하는 공정과,500℃ 내지 900℃의 어닐링 처리를 행함으로써 상기 아몰퍼스 상태의 IZO막을 결정화된 IZO막으로 하는 어닐링 공정을 구비하는 것을 특징으로 하는 반도체 발광 소자의 제조 방법.
- 제7항에 있어서, 상기 어닐링 공정을 행하기 전에 상기 아몰퍼스 상태의 IZO막을 패터닝하는 공정을 구비하는 것을 특징으로 하는 반도체 발광 소자의 제조 방법.
- 제7항 또는 제8항에 있어서, 상기 어닐링 처리는 O2를 포함하지 않는 분위기 중에서 행하는 것을 특징으로 하는 반도체 발광 소자의 제조 방법.
- 제9항에 있어서, 상기 어닐링 처리는 N2 분위기 중 또는 N2와 H2의 혼합 가스 분위기 중에서 행하는 것을 특징으로 하는 반도체 발광 소자의 제조 방법.
- 제7항 또는 제8항에 있어서, 상기 IZO막의 두께가 35㎚ 내지 10㎛인 것을 특징으로 하는 반도체 발광 소자의 제조 방법.
- 제11항에 있어서, 상기 IZO막의 두께가 100㎚ 내지 1㎛인 것을 특징으로 하는 반도체 발광 소자의 제조 방법.
- 제7항 또는 제8항에 있어서, 상기 어닐링 공정 후, 상기 IZO막 상에 보호층을 적층하는 공정을 구비하는 것을 특징으로 하는 반도체 발광 소자의 제조 방법.
- 제1항 또는 제2항에 기재된 반도체 발광 소자가 사용되고 있는 것을 특징으로 하는 램프.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2006-00112012 | 2006-04-14 | ||
JP2006112012A JP5265090B2 (ja) | 2006-04-14 | 2006-04-14 | 半導体発光素子およびランプ |
Publications (2)
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KR20080104363A KR20080104363A (ko) | 2008-12-02 |
KR100988143B1 true KR100988143B1 (ko) | 2010-10-18 |
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Country Status (7)
Country | Link |
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US (1) | US8334200B2 (ko) |
EP (1) | EP2012371B1 (ko) |
JP (1) | JP5265090B2 (ko) |
KR (1) | KR100988143B1 (ko) |
CN (1) | CN101421856A (ko) |
TW (1) | TWI359509B (ko) |
WO (1) | WO2007119830A1 (ko) |
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JP5201566B2 (ja) * | 2006-12-11 | 2013-06-05 | 豊田合成株式会社 | 化合物半導体発光素子及びその製造方法 |
WO2008081566A1 (ja) * | 2006-12-28 | 2008-07-10 | Nec Corporation | 電極構造、半導体素子、およびそれらの製造方法 |
US20080223434A1 (en) | 2007-02-19 | 2008-09-18 | Showa Denko K.K. | Solar cell and process for producing the same |
JP2009260237A (ja) * | 2008-01-24 | 2009-11-05 | Showa Denko Kk | 化合物半導体発光素子及びその製造方法、化合物半導体発光素子用導電型透光性電極、ランプ、電子機器並びに機械装置 |
US20090205707A1 (en) * | 2008-02-19 | 2009-08-20 | Showa Denko K.K. | Solar cell and method for producing the same |
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CN101421856A (zh) | 2009-04-29 |
TWI359509B (en) | 2012-03-01 |
WO2007119830A1 (ja) | 2007-10-25 |
EP2012371A1 (en) | 2009-01-07 |
TW200805714A (en) | 2008-01-16 |
EP2012371A4 (en) | 2014-01-22 |
KR20080104363A (ko) | 2008-12-02 |
US8334200B2 (en) | 2012-12-18 |
JP5265090B2 (ja) | 2013-08-14 |
JP2007287845A (ja) | 2007-11-01 |
US20090179220A1 (en) | 2009-07-16 |
EP2012371B1 (en) | 2015-02-25 |
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