CN101419980B - 微晶半导体膜,薄膜晶体管和包括薄膜晶体管的显示设备 - Google Patents

微晶半导体膜,薄膜晶体管和包括薄膜晶体管的显示设备 Download PDF

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Publication number
CN101419980B
CN101419980B CN2008101713759A CN200810171375A CN101419980B CN 101419980 B CN101419980 B CN 101419980B CN 2008101713759 A CN2008101713759 A CN 2008101713759A CN 200810171375 A CN200810171375 A CN 200810171375A CN 101419980 B CN101419980 B CN 101419980B
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film
impurity element
semiconductor film
microcrystalline semiconductor
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CN101419980A (zh
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山崎舜平
神保安弘
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
CN2008101713759A 2007-10-23 2008-10-23 微晶半导体膜,薄膜晶体管和包括薄膜晶体管的显示设备 Expired - Fee Related CN101419980B (zh)

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JP2007275736 2007-10-23
JP2007275736 2007-10-23
JP2007-275736 2007-10-23

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CN101419980A CN101419980A (zh) 2009-04-29
CN101419980B true CN101419980B (zh) 2013-08-14

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US (1) US8106398B2 (https=)
JP (1) JP5311957B2 (https=)
CN (1) CN101419980B (https=)
TW (1) TWI497712B (https=)

Families Citing this family (12)

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JP5311955B2 (ja) 2007-11-01 2013-10-09 株式会社半導体エネルギー研究所 表示装置の作製方法
KR101452971B1 (ko) * 2008-01-24 2014-10-23 삼성디스플레이 주식회사 박막 트랜지스터의 성능 회복 방법, 이를 적용한 박막트랜지스터 및 액정 표시 장치
WO2010119689A1 (ja) * 2009-04-17 2010-10-21 シャープ株式会社 半導体装置およびその製造方法
JP5563787B2 (ja) * 2009-06-09 2014-07-30 三菱電機株式会社 薄膜トランジスタ及びその製造方法、並びに薄膜トランジスタアレイ基板及び表示装置
US8383434B2 (en) * 2010-02-22 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US8347100B1 (en) 2010-07-14 2013-01-01 F5 Networks, Inc. Methods for DNSSEC proxying and deployment amelioration and systems thereof
US20130083265A1 (en) * 2010-07-21 2013-04-04 Katsunori Misaki Active matrix substrate, method for fabricating the same, and liquid crystal display panel
CN102386072B (zh) * 2010-08-25 2016-05-04 株式会社半导体能源研究所 微晶半导体膜的制造方法及半导体装置的制造方法
CN102176663B (zh) * 2010-12-08 2013-09-25 国家卫星气象中心 适用高频微波遥感具有混频功能的石英电路的制备方法
CN102646676B (zh) * 2011-11-03 2015-06-10 京东方科技集团股份有限公司 一种tft阵列基板
US10797888B1 (en) 2016-01-20 2020-10-06 F5 Networks, Inc. Methods for secured SCEP enrollment for client devices and devices thereof
CN109659235B (zh) * 2018-12-14 2021-12-03 武汉华星光电半导体显示技术有限公司 Tft的制备方法、tft、阵列基板及显示装置

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Also Published As

Publication number Publication date
US8106398B2 (en) 2012-01-31
JP5311957B2 (ja) 2013-10-09
CN101419980A (zh) 2009-04-29
JP2009124113A (ja) 2009-06-04
TWI497712B (zh) 2015-08-21
US20090101916A1 (en) 2009-04-23
TW200931659A (en) 2009-07-16

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