CN101409236B - 半导体器件的制造方法 - Google Patents

半导体器件的制造方法 Download PDF

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Publication number
CN101409236B
CN101409236B CN2008101456976A CN200810145697A CN101409236B CN 101409236 B CN101409236 B CN 101409236B CN 2008101456976 A CN2008101456976 A CN 2008101456976A CN 200810145697 A CN200810145697 A CN 200810145697A CN 101409236 B CN101409236 B CN 101409236B
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semiconductor layer
layer
semiconductor
type
film
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Expired - Fee Related
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CN2008101456976A
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Chinese (zh)
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CN101409236A (zh
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山崎舜平
古野诚
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
CN2008101456976A 2007-08-17 2008-08-11 半导体器件的制造方法 Expired - Fee Related CN101409236B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007213059 2007-08-17
JP2007-213059 2007-08-17
JP2007213059 2007-08-17

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CN101409236A CN101409236A (zh) 2009-04-15
CN101409236B true CN101409236B (zh) 2012-07-11

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US (2) US8101444B2 (https=)
JP (1) JP5779309B2 (https=)
CN (1) CN101409236B (https=)
TW (1) TWI437642B (https=)

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JP5527966B2 (ja) * 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 薄膜トランジスタ
KR101425131B1 (ko) * 2008-01-15 2014-07-31 삼성디스플레이 주식회사 표시 기판 및 이를 포함하는 표시 장치
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WO2011013417A1 (ja) * 2009-07-30 2011-02-03 シャープ株式会社 薄膜トランジスタおよびその製造方法
JP5419730B2 (ja) * 2010-01-27 2014-02-19 三菱電機株式会社 薄膜トランジスタ
JP5752446B2 (ja) * 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
KR20110139394A (ko) * 2010-06-23 2011-12-29 주성엔지니어링(주) 박막 트랜지스터 및 그 제조 방법
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WO2012086481A1 (ja) * 2010-12-21 2012-06-28 シャープ株式会社 半導体装置およびその製造方法
US8629445B2 (en) * 2011-02-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic appliance
CN103053026A (zh) * 2011-08-10 2013-04-17 松下电器产业株式会社 薄膜晶体管器件以及薄膜晶体管器件的制造方法
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JP6199583B2 (ja) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 半導体装置
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CN114008761A (zh) 2019-07-01 2022-02-01 应用材料公司 通过优化等离子体耦合材料来调节膜特性
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US8309406B2 (en) 2012-11-13
JP5779309B2 (ja) 2015-09-16
US20090047760A1 (en) 2009-02-19
TWI437642B (zh) 2014-05-11
US20120094446A1 (en) 2012-04-19
US8101444B2 (en) 2012-01-24
CN101409236A (zh) 2009-04-15
TW200913080A (en) 2009-03-16
JP2009071288A (ja) 2009-04-02

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