CN101409215B - 用于制造soi基板及半导体器件的方法 - Google Patents

用于制造soi基板及半导体器件的方法 Download PDF

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Publication number
CN101409215B
CN101409215B CN200810166534.6A CN200810166534A CN101409215B CN 101409215 B CN101409215 B CN 101409215B CN 200810166534 A CN200810166534 A CN 200810166534A CN 101409215 B CN101409215 B CN 101409215B
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Prior art keywords
layer
substrate
semiconductor layer
semiconductor wafer
single crystal
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Expired - Fee Related
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CN200810166534.6A
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English (en)
Chinese (zh)
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CN101409215A (zh
Inventor
山崎舜平
大沼英人
饭漥阳一
山本孔明
牧野贤一郎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H10D84/909—Microarchitecture
    • H10D84/951—Technology used, i.e. design rules
    • H10D84/957—SOS or SOI technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CN200810166534.6A 2007-10-10 2008-10-10 用于制造soi基板及半导体器件的方法 Expired - Fee Related CN101409215B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007-265012 2007-10-10
JP2007265012 2007-10-10
JP2007265012 2007-10-10

Publications (2)

Publication Number Publication Date
CN101409215A CN101409215A (zh) 2009-04-15
CN101409215B true CN101409215B (zh) 2015-05-06

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Country Link
US (1) US8598013B2 (https=)
JP (1) JP5527956B2 (https=)
KR (1) KR20090037321A (https=)
CN (1) CN101409215B (https=)
TW (1) TWI449126B (https=)

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JP5580010B2 (ja) * 2008-09-05 2014-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP5926887B2 (ja) 2010-02-03 2016-05-25 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
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JP5902917B2 (ja) 2010-11-12 2016-04-13 株式会社半導体エネルギー研究所 半導体基板の作製方法
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CN102706785B (zh) * 2011-03-28 2014-05-07 中芯国际集成电路制造(上海)有限公司 一种测试光刻胶层对离子注入阻挡能力的方法
US9761417B2 (en) * 2011-08-10 2017-09-12 Entegris, Inc. AION coated substrate with optional yttria overlayer
JP5725430B2 (ja) * 2011-10-18 2015-05-27 富士電機株式会社 固相接合ウエハの支持基板の剥離方法および半導体装置の製造方法
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CN107352503A (zh) * 2016-05-09 2017-11-17 江苏英特神斯科技有限公司 一种硅基绝缘层上多晶硅介质与玻璃的阳极键合方法及其应用
CN107219546A (zh) * 2017-05-25 2017-09-29 中国工程物理研究院激光聚变研究中心 一种平响应复合滤片及其制备方法
TWI634468B (zh) 2017-08-18 2018-09-01 Industrial Technology Research Institute 透明顯示裝置
US10396256B2 (en) 2017-08-18 2019-08-27 Industrial Technology Research Institute Electronic device package
CN109411417B (zh) 2017-08-18 2020-09-11 财团法人工业技术研究院 电子组件封装体以及显示面板
CN109712880A (zh) * 2018-12-03 2019-05-03 武汉新芯集成电路制造有限公司 一种晶圆键合力的提升方法及增强系统
CN109468683A (zh) * 2018-12-19 2019-03-15 山东建筑大学 一种基于He离子辐照的石榴石晶体薄膜的制备方法
CN109864707B (zh) * 2019-01-17 2021-09-07 南京科技职业学院 一种在有限视角情况下提高光声断层成像分辨率的方法
CN111508891B (zh) * 2020-04-28 2024-03-12 上海华力集成电路制造有限公司 Soi晶圆片的制作方法
CN111883647B (zh) * 2020-07-23 2021-05-25 中国科学院上海微系统与信息技术研究所 一种压电薄膜的制备方法、压电薄膜及声表面波滤波器
KR102866978B1 (ko) * 2023-10-26 2025-09-30 한국핵융합에너지연구원 다이아몬드 웨이퍼 제조방법
CN119218936B (zh) * 2024-08-22 2025-11-18 北京遥测技术研究所 一种智能分离的微系统制备方法

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TW200939392A (en) 2009-09-16
US20090137101A1 (en) 2009-05-28
KR20090037321A (ko) 2009-04-15
TWI449126B (zh) 2014-08-11
JP5527956B2 (ja) 2014-06-25
JP2009111363A (ja) 2009-05-21
CN101409215A (zh) 2009-04-15
US8598013B2 (en) 2013-12-03

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