CN101373767B - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN101373767B CN101373767B CN 200810168672 CN200810168672A CN101373767B CN 101373767 B CN101373767 B CN 101373767B CN 200810168672 CN200810168672 CN 200810168672 CN 200810168672 A CN200810168672 A CN 200810168672A CN 101373767 B CN101373767 B CN 101373767B
- Authority
- CN
- China
- Prior art keywords
- nmos transistor
- protection
- esd
- electrostatic discharge
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 238000002955 isolation Methods 0.000 claims abstract description 37
- 239000003550 marker Substances 0.000 claims description 12
- 230000003068 static effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007215947A JP5270876B2 (ja) | 2007-08-22 | 2007-08-22 | 半導体装置 |
JP2007215947 | 2007-08-22 | ||
JP2007-215947 | 2007-08-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101373767A CN101373767A (zh) | 2009-02-25 |
CN101373767B true CN101373767B (zh) | 2012-07-11 |
Family
ID=40381363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200810168672 Expired - Fee Related CN101373767B (zh) | 2007-08-22 | 2008-08-22 | 半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8907443B2 (zh) |
JP (1) | JP5270876B2 (zh) |
KR (1) | KR101549701B1 (zh) |
CN (1) | CN101373767B (zh) |
TW (1) | TWI453891B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5546191B2 (ja) * | 2009-09-25 | 2014-07-09 | セイコーインスツル株式会社 | 半導体装置 |
JP2011071329A (ja) * | 2009-09-25 | 2011-04-07 | Seiko Instruments Inc | 半導体装置 |
JP5498822B2 (ja) * | 2010-03-15 | 2014-05-21 | セイコーインスツル株式会社 | 半導体装置 |
CN102412155B (zh) * | 2011-01-17 | 2013-12-18 | 上海华虹Nec电子有限公司 | 隔离型ldmos的制造方法 |
US8994121B2 (en) | 2013-03-22 | 2015-03-31 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US9899376B2 (en) * | 2016-03-04 | 2018-02-20 | Texas Instruments Incorporated | MOSFET transistors with robust subthreshold operations |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5451799A (en) * | 1992-12-28 | 1995-09-19 | Matsushita Electric Industrial Co., Ltd. | MOS transistor for protection against electrostatic discharge |
US5567553A (en) * | 1994-07-12 | 1996-10-22 | International Business Machines Corporation | Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures |
JPH0897411A (ja) * | 1994-09-21 | 1996-04-12 | Fuji Electric Co Ltd | 横型高耐圧トレンチmosfetおよびその製造方法 |
US5757038A (en) * | 1995-11-06 | 1998-05-26 | International Business Machines Corporation | Self-aligned dual gate MOSFET with an ultranarrow channel |
KR100268930B1 (ko) * | 1996-11-12 | 2000-10-16 | 김영환 | 박막트랜지스터의 구조 및 그 제조방법 |
JP3237555B2 (ja) * | 1997-01-09 | 2001-12-10 | 富士電機株式会社 | 半導体装置 |
KR100259078B1 (ko) * | 1997-08-14 | 2000-06-15 | 김영환 | 박막트랜지스터 및 이의 제조방법 |
JP3528554B2 (ja) * | 1997-12-04 | 2004-05-17 | セイコーエプソン株式会社 | 半導体装置 |
DE69925078T2 (de) * | 1998-08-29 | 2006-03-09 | International Business Machines Corp. | SOI-Transistor mit einem Substrat-Kontakt und Verfahren zu dessen Herstellung |
JP2001077368A (ja) * | 1999-09-03 | 2001-03-23 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2001119024A (ja) * | 1999-10-21 | 2001-04-27 | Nec Ic Microcomput Syst Ltd | 半導体装置およびその製造方法 |
JP2001319978A (ja) * | 2000-05-01 | 2001-11-16 | Toshiba Corp | 半導体装置及びその製造方法 |
US7352454B2 (en) * | 2000-11-09 | 2008-04-01 | Canesta, Inc. | Methods and devices for improved charge management for three-dimensional and color sensing |
US6521946B2 (en) * | 2000-11-30 | 2003-02-18 | Texas Instruments Incorporated | Electrostatic discharge resistant extended drain metal oxide semiconductor transistor |
JP2002231886A (ja) | 2001-01-31 | 2002-08-16 | Matsushita Electric Ind Co Ltd | Esd保護回路および半導体集積回路装置 |
TW483143B (en) * | 2001-02-05 | 2002-04-11 | Vanguard Int Semiconduct Corp | Voltage control device for electrostatic discharge protection and its related circuit |
JP2002246601A (ja) * | 2001-02-16 | 2002-08-30 | Seiko Epson Corp | 半導体装置及び半導体装置の製造方法 |
TWI291734B (en) * | 2002-01-17 | 2007-12-21 | Macronix Int Co Ltd | MOSFET with low junction capacitance |
US6660602B1 (en) * | 2002-03-12 | 2003-12-09 | National Semiconductor Corp. | Stand-alone triggering structure for ESD protection of high voltage CMOS |
US6934136B2 (en) * | 2002-04-24 | 2005-08-23 | Texas Instrument Incorporated | ESD protection of noise decoupling capacitors |
US6624487B1 (en) * | 2002-05-07 | 2003-09-23 | Texas Instruments Incorporated | Drain-extended MOS ESD protection structure |
JP2004241529A (ja) * | 2003-02-05 | 2004-08-26 | Matsushita Electric Ind Co Ltd | 半導体回路装置及びその回路シミュレーション方法 |
JP3897730B2 (ja) * | 2003-04-23 | 2007-03-28 | 松下電器産業株式会社 | 半導体記憶装置および半導体集積回路 |
US6905919B2 (en) * | 2003-07-29 | 2005-06-14 | Chartered Semiconductor Manufacturing Ltd. | Method of forming a partially depleted silicon on insulator (PDSOI) transistor with a pad lock body extension |
US20070020795A1 (en) * | 2004-01-19 | 2007-01-25 | Mitsuyoshi Mori | Solid-state imaging device and its manufacturing method |
JP4168995B2 (ja) * | 2004-09-30 | 2008-10-22 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
JP2006210463A (ja) * | 2005-01-26 | 2006-08-10 | Elpida Memory Inc | 半導体装置及びその製造方法 |
JP2006222329A (ja) * | 2005-02-14 | 2006-08-24 | Elpida Memory Inc | 半導体装置 |
US7535063B2 (en) * | 2005-06-28 | 2009-05-19 | United Microelectronics Corp. | ESD protection device structure |
US7453127B2 (en) * | 2006-02-13 | 2008-11-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Double-diffused-drain MOS device with floating non-insulator spacers |
JP2007266569A (ja) * | 2006-02-28 | 2007-10-11 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
US20080203470A1 (en) * | 2007-02-28 | 2008-08-28 | Infineon Technologies Austria Ag | Lateral compensation component |
-
2007
- 2007-08-22 JP JP2007215947A patent/JP5270876B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-14 US US12/191,661 patent/US8907443B2/en not_active Expired - Fee Related
- 2008-08-20 TW TW097131725A patent/TWI453891B/zh not_active IP Right Cessation
- 2008-08-22 KR KR1020080082594A patent/KR101549701B1/ko active IP Right Grant
- 2008-08-22 CN CN 200810168672 patent/CN101373767B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI453891B (zh) | 2014-09-21 |
KR101549701B1 (ko) | 2015-09-02 |
US20090050966A1 (en) | 2009-02-26 |
CN101373767A (zh) | 2009-02-25 |
TW200917463A (en) | 2009-04-16 |
JP5270876B2 (ja) | 2013-08-21 |
JP2009049295A (ja) | 2009-03-05 |
KR20090020530A (ko) | 2009-02-26 |
US8907443B2 (en) | 2014-12-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6768619B2 (en) | Low-voltage-triggered SOI-SCR device and associated ESD protection circuit | |
US7592673B2 (en) | ESD protection circuit with isolated diode element and method thereof | |
US7067887B2 (en) | High voltage device and high voltage device for electrostatic discharge protection circuit | |
US8703547B2 (en) | Thyristor comprising a special doped region characterized by an LDD region and a halo implant | |
CN101373767B (zh) | 半导体器件 | |
KR101758911B1 (ko) | 반도체 장치 | |
CN107564901B (zh) | 具有esd保护功能的ldmos器件及其版图 | |
CN101373769B (zh) | 半导体器件 | |
CN101364596A (zh) | 半导体器件 | |
US20090039431A1 (en) | Semiconductor device | |
US8278714B2 (en) | Semiconductor device | |
KR20090014995A (ko) | 반도체 디바이스 | |
CN113192948A (zh) | 半导体器件 | |
JP5511353B2 (ja) | 半導体装置 | |
KR101034670B1 (ko) | 트랜지스터 및 그의 제조 방법 | |
KR100591125B1 (ko) | 정전기적 방전으로부터의 보호를 위한 게이트 접지 엔모스트랜지스터 | |
JP2011210896A (ja) | 半導体装置 | |
JP2002093999A (ja) | Soi集積回路用esd保護素子 | |
JP2022084984A (ja) | 半導体装置 | |
JPH05235344A (ja) | 半導体集積回路装置 | |
KR20030002632A (ko) | 정전기 방지회로의 모스 트랜지스터 제조 방법 | |
KR20090091524A (ko) | 반도체 소자 구동방법 | |
KR20100001856A (ko) | 정전기 방전 회로 및 그의 형성방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160315 Address after: Chiba County, Japan Patentee after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba, Chiba, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120711 Termination date: 20210822 |