JP4168995B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP4168995B2 JP4168995B2 JP2004288673A JP2004288673A JP4168995B2 JP 4168995 B2 JP4168995 B2 JP 4168995B2 JP 2004288673 A JP2004288673 A JP 2004288673A JP 2004288673 A JP2004288673 A JP 2004288673A JP 4168995 B2 JP4168995 B2 JP 4168995B2
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- 239000004065 semiconductor Substances 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 150000002500 ions Chemical class 0.000 claims description 52
- 238000002955 isolation Methods 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 31
- 238000005468 ion implantation Methods 0.000 claims description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000000137 annealing Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 239000013078 crystal Substances 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Description
前記ソース部及びドレイン部を形成する工程は、前記第1領域及び第3領域に第1イオンを用いてイオン注入する工程と、前記第1領域乃至第4領域に第2イオンを用いてイオン注入する工程と、を備え、前記第2イオンは、前記第1イオンよりも質量の小さく、且つ、同じ極性を有し、前記第1領域乃至前記第4領域はチャネル長方向に並列していることを特徴とする半導体装置の製造方法であることを要旨とする。
また、本発明に係る半導体装置の製造方法において、前記ソース部及びドレイン部を形成する工程は、第2イオンを注入する工程の前に第2マスクを形成する工程をさらに含み、前記第2マスクは、前記第1領域ないし前記第4領域上には形成されないことを特徴とする半導体装置の製造方法であることを要旨とする。
また、本発明に係る半導体装置において、第1イオンはAsイオンを含み、前記第2イオンはPイオンを含むことを特徴とする半導体装置であることを要旨とする。
以下、上記各工程について説明を行う。
Claims (7)
- 半導体基板にSTI構造を有する第1素子分離領域と第2素子分離領域とを形成する工程と、
前記第1素子分離領域及び前記第2素子分離領域との間の前記半導体基板上にゲート部を形成する工程と、
前記ゲート部を挟み込むように前記半導体基板にソース部及びドレイン部を形成する工程と、を含み、
前記ソース部は、第1領域と、前記第1領域及び前記第1素子分離領域の間に形成され、且つ前記半導体基板と前記第1素子分離領域との境界を含む第2領域を備え、
前記ドレイン部は、第3領域と、前記第3領域及び前記第2素子分領域の間に形成され、且つ前記半導体基板と前記第2素子分離領域との境界を含む第4領域を備え、
前記ソース部及びドレイン部を形成する工程は、
前記第1領域及び第3領域に第1イオンを用いてイオン注入する工程と、
前記第1領域乃至第4領域に第2イオンを用いてイオン注入する工程と、を備え、
前記第2イオンは、前記第1イオンよりも質量の小さく、且つ、同じ極性を有し、
前記第1領域乃至前記第4領域はチャネル長方向に並列していることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記ソース部及びドレイン部を形成する工程は、前記第1イオンを注入する工程の前に第1マスクを形成する工程をさらに含み、
前記第1マスクは、前記第1素子分離領域及び前記第2素子分離領域と前記第2領域及び前記第4領域上に形成されることを特徴とする半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法であって、
前記ソース部及びドレイン部を形成する工程は、前記第2イオンを注入する工程の前に第2マスクを形成する工程をさらに含み、
前記第2マスクは、前記第1領域ないし前記第4領域上には形成されないことを特徴とする半導体装置の製造方法。 - 請求項2または3に記載の半導体装置の製造方法であって、
前記第1マスク及び前記第2マスクは、ポリシリコン膜又は窒化シリコン膜であることを特徴とする半導体装置の製造方法。 - 請求項1ないし4の何れかに記載の半導体装置の製造方法であって、
前記第1イオンは、Asイオンを含み、
前記第2イオンは、Pイオンを含むことを特徴とする半導体装置の製造方法。 - 半導体基板と、
前記半導体基板に形成されたSTI構造を有する第1素子分離領域、第2素子分離領域と、
前記半導体基板に形成されたソース部及びドレイン部と、
前記ソース部及びドレイン部の間の領域の前記半導体基板上に形成されたゲート部と、を含み、
前記ソース部は、第1領域及び第2領域を備え、
前記ドレイン部は、第3領域及び第4領域を備え、
前記第2領域は、前記第1領域と前記第1素子分離領域との間に形成され、且つ、前記半導体基板と前記第1素子分離領域との境界を含む領域であって、
前記第4領域は、前記第3領域と前記第2素子分離領域との間に形成され、且つ、前記半導体基板と前記第2素子分離領域との境界を含む領域であって、
前記第1領域及び前記第3領域は、第1イオンを有し、
前記第1領域乃至前記第4領域は、前記第1イオンと同じ極性を有し、且つ、該第1イオンよりも質量が小さい第2イオンを含み、
前記第1領域乃至前記第4領域は、チャネル長方向に並列していることを特徴とする半導体装置。 - 請求項6記載の半導体装置であって、
前記第1イオンはAsイオンを含み、
前記第2イオンはPイオンを含むことを特徴とする半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004288673A JP4168995B2 (ja) | 2004-09-30 | 2004-09-30 | 半導体装置及びその製造方法 |
US11/190,030 US7253067B2 (en) | 2004-09-30 | 2005-07-26 | Method for manufacturing a semiconductor device including a shallow trench isolation structure |
US11/824,763 US7535077B2 (en) | 2004-09-30 | 2007-07-02 | Method for manufacturing a semiconductor device including a shallow trench isolation structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2004288673A JP4168995B2 (ja) | 2004-09-30 | 2004-09-30 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006108142A JP2006108142A (ja) | 2006-04-20 |
JP4168995B2 true JP4168995B2 (ja) | 2008-10-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004288673A Expired - Fee Related JP4168995B2 (ja) | 2004-09-30 | 2004-09-30 | 半導体装置及びその製造方法 |
Country Status (2)
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US (2) | US7253067B2 (ja) |
JP (1) | JP4168995B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7612364B2 (en) * | 2006-08-30 | 2009-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS devices with source/drain regions having stressed regions and non-stressed regions |
JP5270876B2 (ja) * | 2007-08-22 | 2013-08-21 | セイコーインスツル株式会社 | 半導体装置 |
US7977202B2 (en) * | 2008-05-02 | 2011-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing device performance drift caused by large spacings between active regions |
JP4902888B2 (ja) * | 2009-07-17 | 2012-03-21 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP2011086728A (ja) | 2009-10-14 | 2011-04-28 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
CN102779753B (zh) * | 2011-05-12 | 2015-05-06 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6153761A (ja) * | 1984-08-24 | 1986-03-17 | Hitachi Ltd | 半導体装置 |
US5396096A (en) * | 1992-10-07 | 1995-03-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and manufacturing method thereof |
JPH06216380A (ja) | 1992-10-07 | 1994-08-05 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
TW382789B (en) * | 1998-04-22 | 2000-02-21 | United Microelectronics Corp | Method for manufacturing CMOS |
JP2001148478A (ja) | 1999-11-19 | 2001-05-29 | Nec Ic Microcomput Syst Ltd | 半導体装置 |
JP2003037083A (ja) | 2001-07-25 | 2003-02-07 | Fujitsu Ltd | 半導体装置の製造方法 |
US20030064550A1 (en) * | 2001-09-28 | 2003-04-03 | Layman Paul Arthur | Method of ion implantation for achieving desired dopant concentration |
JP2003229496A (ja) | 2002-02-05 | 2003-08-15 | Denso Corp | 半導体装置の製造方法 |
-
2004
- 2004-09-30 JP JP2004288673A patent/JP4168995B2/ja not_active Expired - Fee Related
-
2005
- 2005-07-26 US US11/190,030 patent/US7253067B2/en not_active Expired - Fee Related
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2007
- 2007-07-02 US US11/824,763 patent/US7535077B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20060079063A1 (en) | 2006-04-13 |
US7253067B2 (en) | 2007-08-07 |
US7535077B2 (en) | 2009-05-19 |
US20070252222A1 (en) | 2007-11-01 |
JP2006108142A (ja) | 2006-04-20 |
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