CN101346804B - 研磨用组合物、研磨方法及半导体集成电路用铜配线的制造方法 - Google Patents

研磨用组合物、研磨方法及半导体集成电路用铜配线的制造方法 Download PDF

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Publication number
CN101346804B
CN101346804B CN2006800487285A CN200680048728A CN101346804B CN 101346804 B CN101346804 B CN 101346804B CN 2006800487285 A CN2006800487285 A CN 2006800487285A CN 200680048728 A CN200680048728 A CN 200680048728A CN 101346804 B CN101346804 B CN 101346804B
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CN
China
Prior art keywords
polishing
acid
carboxylic acid
copper
composition
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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Chinese (zh)
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CN101346804A (zh
Inventor
吉田伊织
神谷广幸
竹宫聪
林笃
中泽伯人
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AGC Inc
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Asahi Glass Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2006800487285A 2005-12-21 2006-12-21 研磨用组合物、研磨方法及半导体集成电路用铜配线的制造方法 Expired - Fee Related CN101346804B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2005368082 2005-12-21
JP368082/2005 2005-12-21
JP125474/2006 2006-04-28
JP2006125474 2006-04-28
JP2006277585 2006-10-11
JP277585/2006 2006-10-11
PCT/JP2006/325521 WO2007072918A1 (ja) 2005-12-21 2006-12-21 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法

Publications (2)

Publication Number Publication Date
CN101346804A CN101346804A (zh) 2009-01-14
CN101346804B true CN101346804B (zh) 2010-05-26

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CN2006800487285A Expired - Fee Related CN101346804B (zh) 2005-12-21 2006-12-21 研磨用组合物、研磨方法及半导体集成电路用铜配线的制造方法

Country Status (6)

Country Link
EP (1) EP1965417B1 (https=)
JP (3) JP4277930B2 (https=)
KR (1) KR20080078840A (https=)
CN (1) CN101346804B (https=)
TW (1) TW200738852A (https=)
WO (1) WO2007072918A1 (https=)

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JPWO2008155987A1 (ja) * 2007-06-20 2010-08-26 旭硝子株式会社 研磨用組成物、半導体集積回路表面の研磨方法および半導体集積回路用銅配線の作製方法
CN101689493A (zh) * 2007-06-20 2010-03-31 旭硝子株式会社 研磨用组合物及半导体集成电路装置的制造方法
JP5226278B2 (ja) * 2007-11-08 2013-07-03 株式会社クラレ 研磨用スラリー
KR101562416B1 (ko) * 2008-02-06 2015-10-21 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법
JP5413566B2 (ja) * 2008-02-06 2014-02-12 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5413567B2 (ja) * 2008-02-06 2014-02-12 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5413568B2 (ja) * 2008-02-06 2014-02-12 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028077A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
KR20100123678A (ko) * 2008-02-18 2010-11-24 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법
JP2009224767A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010041027A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333742B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010016344A (ja) * 2008-02-18 2010-01-21 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333743B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2009224771A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
JP5333744B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
JP5333739B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028079A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010034497A (ja) * 2008-02-18 2010-02-12 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333740B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028078A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333741B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
WO2009133793A1 (ja) 2008-05-01 2009-11-05 Jsr株式会社 化学機械研磨用水系分散体および該化学機械研磨用水系分散体を調製するためのキット、ならびに化学機械研磨方法
TW201012909A (en) * 2008-08-28 2010-04-01 Asahi Glass Co Ltd Abrasive composition and method for manufacturing semiconductor integrated circuit device
WO2010052983A1 (ja) 2008-11-10 2010-05-14 旭硝子株式会社 研磨用組成物および半導体集積回路装置の製造方法
JP6051679B2 (ja) * 2012-08-22 2016-12-27 住友電気工業株式会社 研磨用組成物および化合物半導体基板の製造方法
WO2015140850A1 (ja) * 2014-03-20 2015-09-24 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
US10613442B2 (en) * 2015-03-12 2020-04-07 Merck Patent Gmbh Compositions and methods that promote charge complexing copper protection during low pKa driven polymer stripping
CN110447090A (zh) * 2017-03-22 2019-11-12 三菱化学株式会社 半导体器件用基板的清洗液、半导体器件用基板的清洗方法、半导体器件用基板的制造方法和半导体器件用基板
JP7002853B2 (ja) * 2017-04-03 2022-01-20 富士紡ホールディングス株式会社 研磨パッド及びその製造方法、並びに、研磨加工品の製造方法
CN107841288A (zh) * 2017-12-12 2018-03-27 戚明海 Cmp研磨剂及其制造方法

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CN1576347A (zh) * 2003-07-04 2005-02-09 捷时雅株式会社 化学机械研磨用水性分散体及其化学机械研磨方法
CN1637100A (zh) * 2003-11-26 2005-07-13 Cmp罗姆和哈斯电子材料控股公司 用于化学机械抛光氧化硅和氮化硅的组合物和方法

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JP4171858B2 (ja) * 1999-06-23 2008-10-29 Ｊｓｒ株式会社 研磨用組成物および研磨方法
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
TWI347969B (en) * 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
CN100435290C (zh) * 2003-09-30 2008-11-19 福吉米株式会社 研磨用组合物及研磨方法

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CN1576347A (zh) * 2003-07-04 2005-02-09 捷时雅株式会社 化学机械研磨用水性分散体及其化学机械研磨方法
CN1637100A (zh) * 2003-11-26 2005-07-13 Cmp罗姆和哈斯电子材料控股公司 用于化学机械抛光氧化硅和氮化硅的组合物和方法

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Also Published As

Publication number Publication date
JPWO2007072918A1 (ja) 2009-06-04
EP1965417A4 (en) 2009-08-05
JP4277930B2 (ja) 2009-06-10
KR20080078840A (ko) 2008-08-28
TW200738852A (en) 2007-10-16
JP2009152646A (ja) 2009-07-09
EP1965417B1 (en) 2013-03-06
CN101346804A (zh) 2009-01-14
WO2007072918A1 (ja) 2007-06-28
EP1965417A1 (en) 2008-09-03
JP2008283203A (ja) 2008-11-20

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