CN101266954B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

Info

Publication number
CN101266954B
CN101266954B CN2008100864215A CN200810086421A CN101266954B CN 101266954 B CN101266954 B CN 101266954B CN 2008100864215 A CN2008100864215 A CN 2008100864215A CN 200810086421 A CN200810086421 A CN 200810086421A CN 101266954 B CN101266954 B CN 101266954B
Authority
CN
China
Prior art keywords
substrate
semiconductor device
resin
fiber body
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008100864215A
Other languages
English (en)
Chinese (zh)
Other versions
CN101266954A (zh
Inventor
杉山荣二
道前芳隆
大谷久
鹤目卓也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN101266954A publication Critical patent/CN101266954A/zh
Application granted granted Critical
Publication of CN101266954B publication Critical patent/CN101266954B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2208—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems
    • H01Q1/2225—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/695—Organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/699—Insulating or insulated package substrates; Interposers; Redistribution layers for flat cards, e.g. credit cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN2008100864215A 2007-03-13 2008-03-12 半导体装置及其制造方法 Expired - Fee Related CN101266954B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007064052 2007-03-13
JP2007-064052 2007-03-13

Publications (2)

Publication Number Publication Date
CN101266954A CN101266954A (zh) 2008-09-17
CN101266954B true CN101266954B (zh) 2013-03-06

Family

ID=39643902

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008100864215A Expired - Fee Related CN101266954B (zh) 2007-03-13 2008-03-12 半导体装置及其制造方法

Country Status (6)

Country Link
US (2) US7808098B2 (https=)
EP (2) EP2372756A1 (https=)
JP (1) JP2008262547A (https=)
KR (1) KR101493295B1 (https=)
CN (1) CN101266954B (https=)
TW (1) TWI475748B (https=)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1976000A3 (en) * 2007-03-26 2009-05-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5268395B2 (ja) * 2007-03-26 2013-08-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI423519B (zh) * 2007-09-04 2014-01-11 Mitsubishi Electric Corp Radio frequency identification tag
WO2009031482A1 (en) 2007-09-07 2009-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5376961B2 (ja) * 2008-02-01 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
US8049292B2 (en) * 2008-03-27 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2009139282A1 (en) 2008-05-12 2009-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2009142310A1 (en) * 2008-05-23 2009-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5473413B2 (ja) 2008-06-20 2014-04-16 株式会社半導体エネルギー研究所 配線基板の作製方法、アンテナの作製方法及び半導体装置の作製方法
JP2010041045A (ja) * 2008-07-09 2010-02-18 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP5358324B2 (ja) * 2008-07-10 2013-12-04 株式会社半導体エネルギー研究所 電子ペーパー
JP2010041040A (ja) * 2008-07-10 2010-02-18 Semiconductor Energy Lab Co Ltd 光電変換装置および光電変換装置の製造方法
KR102026604B1 (ko) 2008-07-10 2019-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
JP5216716B2 (ja) 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
WO2010032602A1 (en) 2008-09-18 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2010032611A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2010035627A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101611643B1 (ko) 2008-10-01 2016-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5583951B2 (ja) * 2008-11-11 2014-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102017099A (zh) * 2008-12-17 2011-04-13 松下电器产业株式会社 贯通电极的形成方法及半导体装置
KR101075753B1 (ko) * 2008-12-22 2011-10-24 삼성전자주식회사 안테나 장치 및 그 제조방법
JP5470054B2 (ja) 2009-01-22 2014-04-16 株式会社半導体エネルギー研究所 半導体装置
KR101677076B1 (ko) * 2009-06-05 2016-11-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 디바이스 및 그 제조 방법
CN102460722B (zh) * 2009-06-05 2015-04-01 株式会社半导体能源研究所 光电转换装置及其制造方法
WO2010140522A1 (en) * 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
TWI474447B (zh) * 2009-06-29 2015-02-21 日月光半導體製造股份有限公司 半導體封裝結構及其封裝方法
US8345435B2 (en) * 2009-08-07 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Terminal structure and manufacturing method thereof, and electronic device and manufacturing method thereof
TWI517268B (zh) * 2009-08-07 2016-01-11 半導體能源研究所股份有限公司 端子構造的製造方法和電子裝置的製造方法
US9136286B2 (en) 2009-08-07 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Display panel and electronic book
SG178061A1 (en) * 2009-08-25 2012-03-29 Semiconductor Energy Lab Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing soi substrate
US8318588B2 (en) 2009-08-25 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
SG178179A1 (en) 2009-10-09 2012-03-29 Semiconductor Energy Lab Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate
JP5719560B2 (ja) * 2009-10-21 2015-05-20 株式会社半導体エネルギー研究所 端子構造の作製方法
US8561909B2 (en) * 2010-03-09 2013-10-22 Skyworks Solutions, Inc. RFID device having low-loss barium-based ceramic oxide
US8823597B2 (en) * 2010-03-19 2014-09-02 Shanghai IC R & D Center Co., Ltd Multi-system multi-band RFID antenna
US20120262660A1 (en) * 2010-04-09 2012-10-18 Sharp Kabushiki Kaisha Display device
US8519509B2 (en) 2010-04-16 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101679657B1 (ko) * 2010-09-29 2016-11-25 삼성전자주식회사 유리섬유를 이용한 웨이퍼 레벨 몰드 형성방법 및 그 방법에 의한 웨이퍼 구조
JP5715835B2 (ja) * 2011-01-25 2015-05-13 新光電気工業株式会社 半導体パッケージ及びその製造方法
CN102214642B (zh) * 2011-06-03 2012-10-10 安徽省祁门县黄山电器有限责任公司 组合式大功率半导体芯片
US9123529B2 (en) 2011-06-21 2015-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
JP2014135422A (ja) * 2013-01-11 2014-07-24 Toyota Motor Corp 半導体装置の製造方法
US10170315B2 (en) 2013-07-17 2019-01-01 Globalfoundries Inc. Semiconductor device having local buried oxide
SG2013055348A (en) * 2013-07-19 2015-02-27 Kok Ann Wong A contactless smart chip for biometric tracking
US9252272B2 (en) 2013-11-18 2016-02-02 Globalfoundries Inc. FinFET semiconductor device having local buried oxide
CN104716136B (zh) * 2013-12-17 2018-02-06 中芯国际集成电路制造(上海)有限公司 一种集成电路及其制造方法
US9253884B2 (en) 2013-12-20 2016-02-02 Intel Corporation Electronic fabric with incorporated chip and interconnect
JP2015216072A (ja) 2014-05-13 2015-12-03 株式会社ジャパンディスプレイ 有機ｅｌ装置及びその製造方法
US10229353B2 (en) 2014-07-31 2019-03-12 3M Innovative Properties Company RFID tag on stretchable substrate
CN106575369B (zh) 2014-07-31 2019-09-13 3M创新有限公司 柔性基底上的rfid标签
US20160379943A1 (en) * 2015-06-25 2016-12-29 Skyworks Solutions, Inc. Method and apparatus for high performance passive-active circuit integration
WO2017130836A1 (ja) * 2016-01-25 2017-08-03 東レ株式会社 ｎ型半導体素子と相補型半導体装置およびその製造方法ならびにそれを用いた無線通信装置
US10581177B2 (en) 2016-12-15 2020-03-03 Raytheon Company High frequency polymer on metal radiator
US11088467B2 (en) 2016-12-15 2021-08-10 Raytheon Company Printed wiring board with radiator and feed circuit
US10541461B2 (en) * 2016-12-16 2020-01-21 Ratheon Company Tile for an active electronically scanned array (AESA)
US10361485B2 (en) 2017-08-04 2019-07-23 Raytheon Company Tripole current loop radiating element with integrated circularly polarized feed
CN112585812B (zh) * 2018-08-24 2023-07-25 京瓷株式会社 谐振构造体、天线、无线通信模块以及无线通信设备
JP7631049B2 (ja) * 2021-03-16 2025-02-18 キオクシア株式会社 半導体記憶装置および半導体記憶装置の製造方法
KR20240006569A (ko) * 2021-05-10 2024-01-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN114023781B (zh) * 2021-10-08 2023-06-16 业成科技（成都）有限公司 曲面电子装置及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1370389A (zh) * 1999-06-25 2002-09-18 联合讯号公司 便于激光通路钻孔的微纤维介质
CN1691877A (zh) * 2004-04-19 2005-11-02 松下电器产业株式会社 叠层基板制造方法和用其的组件用半导体元件及制造设备
CN1893003A (zh) * 2005-07-08 2007-01-10 株式会社半导体能源研究所 布线衬底以及半导体装置的制造方法

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0541795B1 (en) 1989-01-25 1998-04-01 Asahi Kasei Kogyo Kabushiki Kaisha New prepreg and composite molding, and production of composite molding
DE3907757A1 (de) 1989-03-10 1990-09-13 Mtu Muenchen Gmbh Schutzfolie
JPH03125411A (ja) 1989-10-09 1991-05-28 Asmo Co Ltd 着磁装置
US5888609A (en) * 1990-12-18 1999-03-30 Valtion Teknillinen Tutkimuskeskus Planar porous composite structure and method for its manufacture
JPH05190582A (ja) 1992-01-08 1993-07-30 Oki Electric Ind Co Ltd 樹脂封止半導体装置及びその製造方法
JP3125411B2 (ja) 1992-02-21 2001-01-15 株式会社日立製作所 液晶表示装置
JP3578466B2 (ja) 1992-04-14 2004-10-20 ユニチカ株式会社 補強用無機繊維織布及びそれを用いた多層プリント配線板
JPH077246A (ja) * 1993-06-17 1995-01-10 Kobe Steel Ltd 電子部品構成物内蔵インモールド品の製造方法
ATE170307T1 (de) 1994-05-27 1998-09-15 Ake Gustafson Verfahren zur herstellung eines elektronischen moduls und nach diesem verfahren hergestelltes modul
TW371285B (en) 1994-09-19 1999-10-01 Amp Akzo Linlam Vof Foiled UD-prepreg and PWB laminate prepared therefrom
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5757456A (en) 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
JP3406727B2 (ja) 1995-03-10 2003-05-12 株式会社半導体エネルギー研究所 表示装置
JPH08321679A (ja) * 1995-05-24 1996-12-03 Nec Corp 多層プリント配線板
JPH10129165A (ja) 1996-03-15 1998-05-19 Hitachi Maxell Ltd 情報担体及びその製造方法
US6482495B1 (en) 1996-09-04 2002-11-19 Hitachi Maxwell, Ltd. Information carrier and process for production thereof
JPH1092980A (ja) * 1996-09-13 1998-04-10 Toshiba Corp 無線カードおよびその製造方法
JPH10209340A (ja) * 1997-01-16 1998-08-07 Toray Ind Inc Ｉｃ封止枠体およびその製造方法
JP3322256B2 (ja) * 1997-01-31 2002-09-09 株式会社デンソー Ｉｃカードの製造方法
JP3193344B2 (ja) * 1998-05-25 2001-07-30 東レ・デュポン株式会社 アラミド繊維用表面処理剤、表面処理されたアラミド繊維、アラミド繊維の表面処理方法および繊維強化複合材料
TW484101B (en) 1998-12-17 2002-04-21 Hitachi Ltd Semiconductor device and its manufacturing method
JP2004078991A (ja) 1998-12-17 2004-03-11 Hitachi Ltd 半導体装置およびその製造方法
JP4423779B2 (ja) * 1999-10-13 2010-03-03 味の素株式会社 エポキシ樹脂組成物並びに該組成物を用いた接着フィルム及びプリプレグ、及びこれらを用いた多層プリント配線板及びその製造法
US6370013B1 (en) * 1999-11-30 2002-04-09 Kyocera Corporation Electric element incorporating wiring board
JP3675688B2 (ja) 2000-01-27 2005-07-27 寛治 大塚 配線基板及びその製造方法
JP4884592B2 (ja) 2000-03-15 2012-02-29 株式会社半導体エネルギー研究所 発光装置の作製方法及び表示装置の作製方法
JP2002198658A (ja) * 2000-12-26 2002-07-12 Kyocera Corp プリプレグ及びその製造方法、並びにそれを用いた配線基板の製造方法
TW564471B (en) 2001-07-16 2003-12-01 Semiconductor Energy Lab Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003049388A (ja) 2001-08-08 2003-02-21 Du Pont Toray Co Ltd 扁平化したアラミド繊維からなる布帛
CN100380673C (zh) 2001-11-09 2008-04-09 株式会社半导体能源研究所 发光设备及其制造方法
KR100430001B1 (ko) 2001-12-18 2004-05-03 엘지전자 주식회사 다층기판의 제조방법, 그 다층기판의 패드 형성방법 및 그다층기판을 이용한 반도체 패키지의 제조방법
US7485489B2 (en) 2002-06-19 2009-02-03 Bjoersell Sten Electronics circuit manufacture
AU2003253227A1 (en) * 2002-06-19 2004-01-06 Sten Bjorsell Electronics circuit manufacture
DE10234246A1 (de) * 2002-07-27 2004-02-05 Tesa Ag Haftklebemassen mit hohem Brechungsindex auf Basis von Acrylatblockcopolymeren
JP2004140267A (ja) 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2004356569A (ja) * 2003-05-30 2004-12-16 Shinko Electric Ind Co Ltd 半導体装置用パッケージ
JP4828088B2 (ja) 2003-06-05 2011-11-30 凸版印刷株式会社 Ｉｃタグ
JP4540359B2 (ja) 2004-02-10 2010-09-08 シャープ株式会社 半導体装置およびその製造方法
JP4424044B2 (ja) * 2004-04-09 2010-03-03 住友ベークライト株式会社 透明複合シート及びそれを用いた表示素子
KR20060045208A (ko) 2004-11-12 2006-05-17 삼성테크윈 주식회사 반도체 팩키지용 회로기판 및 이의 제조방법
US7736964B2 (en) 2004-11-22 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method for manufacturing the same
JP5072217B2 (ja) 2004-11-22 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2006192745A (ja) * 2005-01-14 2006-07-27 Toray Ind Inc 強化繊維基材、プリフォーム、繊維強化樹脂成形体およびその製造方法
US7566633B2 (en) * 2005-02-25 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4467449B2 (ja) * 2005-02-25 2010-05-26 旭化成イーマテリアルズ株式会社 基板補強用繊維織物、並びに該補強用繊維織物を使用したプリプレグ、及びプリント配線板用基板
US20060202269A1 (en) * 2005-03-08 2006-09-14 Semiconductor Energy Laboratory Co., Ltd. Wireless chip and electronic appliance having the same
JP5127161B2 (ja) * 2005-05-30 2013-01-23 株式会社半導体エネルギー研究所 半導体装置
US7997499B2 (en) 2005-05-30 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7465674B2 (en) 2005-05-31 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5057703B2 (ja) 2005-05-31 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4827618B2 (ja) * 2005-05-31 2011-11-30 株式会社半導体エネルギー研究所 アンテナの作製方法、半導体装置の作製方法
CN101189625B (zh) 2005-05-31 2011-09-28 株式会社半导体能源研究所 半导体器件及其制造方法以及天线的制造方法
EP1886377A4 (en) 2005-05-31 2014-10-29 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
JP4704959B2 (ja) * 2005-05-31 2011-06-22 株式会社半導体エネルギー研究所 商品の管理方法および危険物の管理方法
JP2007036216A (ja) * 2005-06-24 2007-02-08 Semiconductor Energy Lab Co Ltd 半導体装置及び無線通信システム
US20090255995A1 (en) 2005-06-24 2009-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and wireless communication system
US7727859B2 (en) 2005-06-30 2010-06-01 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
JP2007064052A (ja) 2005-08-30 2007-03-15 Sanden Corp ハイブリッド圧縮機
US7700463B2 (en) 2005-09-02 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI431726B (zh) 2006-06-01 2014-03-21 半導體能源研究所股份有限公司 非揮發性半導體記憶體裝置
CN101479747B (zh) 2006-06-26 2011-05-18 株式会社半导体能源研究所 包括半导体器件的纸及其制造方法
EP1970951A3 (en) 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5268395B2 (ja) 2007-03-26 2013-08-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1976000A3 (en) 2007-03-26 2009-05-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5248240B2 (ja) 2007-08-30 2013-07-31 株式会社半導体エネルギー研究所 半導体装置
WO2009031482A1 (en) 2007-09-07 2009-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1370389A (zh) * 1999-06-25 2002-09-18 联合讯号公司 便于激光通路钻孔的微纤维介质
CN1691877A (zh) * 2004-04-19 2005-11-02 松下电器产业株式会社 叠层基板制造方法和用其的组件用半导体元件及制造设备
CN1893003A (zh) * 2005-07-08 2007-01-10 株式会社半导体能源研究所 布线衬底以及半导体装置的制造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP平10-92980A 1998.04.10
JP平7-7246A 1995.01.10

Also Published As

Publication number Publication date
EP1970952A2 (en) 2008-09-17
EP2372756A1 (en) 2011-10-05
US20110024853A1 (en) 2011-02-03
CN101266954A (zh) 2008-09-17
TW200903898A (en) 2009-01-16
JP2008262547A (ja) 2008-10-30
US7808098B2 (en) 2010-10-05
KR101493295B1 (ko) 2015-02-16
US8558370B2 (en) 2013-10-15
KR20080084666A (ko) 2008-09-19
TWI475748B (zh) 2015-03-01
EP1970952A3 (en) 2009-05-06
US20080224940A1 (en) 2008-09-18

Similar Documents

Publication Publication Date Title
CN101266954B (zh) 半导体装置及其制造方法
CN101276767B (zh) 半导体装置的制造方法
CN101266953B (zh) 半导体器件及其制造方法
CN101803008B (zh) 半导体装置及其制造方法
CN102496607B (zh) 半导体装置的制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130306

Termination date: 20210312

CF01 Termination of patent right due to non-payment of annual fee