CN101246894B - 光电转换装置、电子设备、以及光电转换装置的制造方法 - Google Patents

光电转换装置、电子设备、以及光电转换装置的制造方法 Download PDF

Info

Publication number
CN101246894B
CN101246894B CN2008100099740A CN200810009974A CN101246894B CN 101246894 B CN101246894 B CN 101246894B CN 2008100099740 A CN2008100099740 A CN 2008100099740A CN 200810009974 A CN200810009974 A CN 200810009974A CN 101246894 B CN101246894 B CN 101246894B
Authority
CN
China
Prior art keywords
photoelectric conversion
electrode
substrate
conversion device
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008100099740A
Other languages
English (en)
Chinese (zh)
Other versions
CN101246894A (zh
Inventor
楠本直人
西和夫
菅原裕辅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN101246894A publication Critical patent/CN101246894A/zh
Application granted granted Critical
Publication of CN101246894B publication Critical patent/CN101246894B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/155—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN2008100099740A 2007-02-15 2008-02-15 光电转换装置、电子设备、以及光电转换装置的制造方法 Expired - Fee Related CN101246894B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007034650 2007-02-15
JP2007-034650 2007-02-15
JP2007034650 2007-02-15

Publications (2)

Publication Number Publication Date
CN101246894A CN101246894A (zh) 2008-08-20
CN101246894B true CN101246894B (zh) 2012-12-12

Family

ID=39714918

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008100099740A Expired - Fee Related CN101246894B (zh) 2007-02-15 2008-02-15 光电转换装置、电子设备、以及光电转换装置的制造方法

Country Status (3)

Country Link
US (2) US8207589B2 (enExample)
JP (1) JP5089419B2 (enExample)
CN (1) CN101246894B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9095066B2 (en) * 2008-06-18 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Printed board
JP5737313B2 (ja) * 2013-03-28 2015-06-17 Tdk株式会社 電子部品及びその製造方法
CN106910693B (zh) * 2015-12-23 2019-11-08 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
JP6943245B2 (ja) * 2016-07-20 2021-09-29 ソニーグループ株式会社 受光素子、撮像装置および電子機器
JP2018182021A (ja) * 2017-04-11 2018-11-15 ソニーセミコンダクタソリューションズ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
CN107170842B (zh) * 2017-06-12 2019-07-02 京东方科技集团股份有限公司 光电探测结构及其制作方法、光电探测器
KR102601212B1 (ko) * 2018-10-10 2023-11-10 삼성전자주식회사 광전 소자를 포함하는 집적 회로 소자
CN111508349B (zh) * 2019-01-31 2022-03-08 武汉华星光电半导体显示技术有限公司 一种显示面板、显示面板的制造方法及电子设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6777767B2 (en) * 1999-12-10 2004-08-17 Shellcase Ltd. Methods for producing packaged integrated circuit devices & packaged integrated circuit devices produced thereby

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4690714A (en) * 1979-01-29 1987-09-01 Li Chou H Method of making active solid state devices
JPS5613777A (en) * 1979-07-16 1981-02-10 Shunpei Yamazaki Photoelectric converter
US4890383A (en) * 1988-01-15 1990-01-02 Simens Corporate Research & Support, Inc. Method for producing displays and modular components
JPH0666355B2 (ja) 1988-12-16 1994-08-24 松下電器産業株式会社 半導体装置の実装体およびその実装方法
US5291038A (en) * 1990-12-19 1994-03-01 Sharp Kabushiki Kaisha Reflective type photointerrupter
JPH05326618A (ja) 1992-05-15 1993-12-10 Rohm Co Ltd 半導体装置
US5635669A (en) * 1992-07-27 1997-06-03 Murata Manufacturing Co., Ltd. Multilayer electronic component
SG48955A1 (en) * 1992-07-27 1998-05-18 Murata Manufacturing Co Multilayer electronic component method of manufacturing the same and method of measuring characteristics thereof
US6720576B1 (en) * 1992-09-11 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and photoelectric conversion device
JP3393842B2 (ja) 1992-09-11 2003-04-07 株式会社半導体エネルギー研究所 光電変換装置の作製方法
US5821597A (en) * 1992-09-11 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US5501989A (en) * 1993-03-22 1996-03-26 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer
JP3329512B2 (ja) 1993-03-22 2002-09-30 株式会社半導体エネルギー研究所 半導体回路およびその作製方法
JPH06342930A (ja) 1993-06-01 1994-12-13 Seikosha Co Ltd 光検出用半導体装置
JP3464287B2 (ja) 1994-09-05 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO1997002596A1 (en) * 1995-06-30 1997-01-23 Kabushiki Kaisha Toshiba Electronic component and method of production thereof
US20020053742A1 (en) * 1995-09-01 2002-05-09 Fumio Hata IC package and its assembly method
JP3507251B2 (ja) 1995-09-01 2004-03-15 キヤノン株式会社 光センサｉｃパッケージおよびその組立方法
JP3725266B2 (ja) * 1996-11-07 2005-12-07 株式会社半導体エネルギー研究所 配線形成方法
JPH11121783A (ja) * 1997-10-09 1999-04-30 Canon Inc 光検出装置およびその製造方法
JP4372260B2 (ja) * 1999-03-17 2009-11-25 シャープ株式会社 液晶パネルの製造方法
JP3614030B2 (ja) * 1999-04-02 2005-01-26 株式会社村田製作所 マザー基板，子基板およびそれを用いた電子部品ならびにその製造方法
JP3523815B2 (ja) 1999-08-30 2004-04-26 シャープ株式会社 半導体装置
JP2001036097A (ja) 2000-01-01 2001-02-09 Semiconductor Energy Lab Co Ltd 半導体装置
US6995753B2 (en) * 2000-06-06 2006-02-07 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
JP5110748B2 (ja) 2000-06-06 2012-12-26 株式会社半導体エネルギー研究所 表示装置
JP2002072963A (ja) * 2000-06-12 2002-03-12 Semiconductor Energy Lab Co Ltd 発光モジュールおよびその駆動方法並びに光センサ
JP2002026270A (ja) * 2000-07-10 2002-01-25 Nec Corp 半導体装置の製造方法
JP4477202B2 (ja) * 2000-07-12 2010-06-09 ローム株式会社 半導体装置およびその製造方法
US7030551B2 (en) * 2000-08-10 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
US6495380B2 (en) * 2000-12-11 2002-12-17 Nortel Networks Limited Epitaxially grown avalanche photodiode
US6747290B2 (en) * 2000-12-12 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Information device
KR100394808B1 (ko) * 2001-07-19 2003-08-14 삼성전자주식회사 웨이퍼 레벨 적층 칩 패키지 및 그 제조 방법
US6500760B1 (en) * 2001-08-02 2002-12-31 Sandia Corporation Gold-based electrical interconnections for microelectronic devices
JP2003060744A (ja) 2001-08-21 2003-02-28 Sanyo Electric Co Ltd 携帯機器
US6747348B2 (en) * 2001-10-16 2004-06-08 Micron Technology, Inc. Apparatus and method for leadless packaging of semiconductor devices
US6777746B2 (en) * 2002-03-27 2004-08-17 Kabushiki Kaisha Toshiba Field effect transistor and application device thereof
US6642081B1 (en) * 2002-04-11 2003-11-04 Robert Patti Interlocking conductor method for bonding wafers to produce stacked integrated circuits
JP2004022901A (ja) * 2002-06-18 2004-01-22 Seiko Epson Corp 光インターコネクション集積回路、光インターコネクション集積回路の製造方法、電気光学装置および電子機器
JP4005873B2 (ja) * 2002-08-15 2007-11-14 株式会社東芝 半導体装置
JP4373063B2 (ja) * 2002-09-02 2009-11-25 株式会社半導体エネルギー研究所 電子回路装置
KR101026644B1 (ko) 2003-01-08 2011-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US7042052B2 (en) * 2003-02-10 2006-05-09 Micron Technology, Inc. Transistor constructions and electronic devices
EP1665394A4 (en) * 2003-09-09 2006-12-13 Csg Solar Ag SETTING MASKS BY FLOW
US7253391B2 (en) 2003-09-19 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Optical sensor device and electronic apparatus
JP2005129909A (ja) * 2003-09-19 2005-05-19 Semiconductor Energy Lab Co Ltd 光センサー装置および電子機器
EP1523043B1 (en) * 2003-10-06 2011-12-28 Semiconductor Energy Laboratory Co., Ltd. Optical sensor and method for manufacturing the same
JP4481135B2 (ja) * 2003-10-06 2010-06-16 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP4817636B2 (ja) * 2004-10-04 2011-11-16 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US7492028B2 (en) * 2005-02-18 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
JP5089880B2 (ja) * 2005-11-30 2012-12-05 日本特殊陶業株式会社 配線基板内蔵用キャパシタ、キャパシタ内蔵配線基板及びその製造方法
US7923800B2 (en) * 2006-12-27 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6777767B2 (en) * 1999-12-10 2004-08-17 Shellcase Ltd. Methods for producing packaged integrated circuit devices & packaged integrated circuit devices produced thereby

Also Published As

Publication number Publication date
CN101246894A (zh) 2008-08-20
US20120256286A1 (en) 2012-10-11
US8592936B2 (en) 2013-11-26
US20080203515A1 (en) 2008-08-28
JP5089419B2 (ja) 2012-12-05
JP2008227476A (ja) 2008-09-25
US8207589B2 (en) 2012-06-26

Similar Documents

Publication Publication Date Title
TWI437214B (zh) 光電轉換裝置及具有光電轉換裝置之電子裝置
CN101246894B (zh) 光电转换装置、电子设备、以及光电转换装置的制造方法
US8207591B2 (en) Photoelectric conversion device
KR101227022B1 (ko) 광전 변환 장치 및 그 제작 방법과, 반도체 장치
US8999818B2 (en) Semiconductor device and method of manufacturing semiconductor device
CN101233394B (zh) 半导体装置
KR101250293B1 (ko) 광전 변환 장치 및 그 제조 방법
US8106474B2 (en) Semiconductor device
TWI453565B (zh) 光電轉換裝置及具有該光電轉換裝置之電子裝置
JP4827396B2 (ja) 半導体装置の作製方法
JP4809715B2 (ja) 光電変換装置及びその作製方法、並びに半導体装置
KR101423055B1 (ko) 반도체 장치를 갖는 광전 변환 소자 및 이것을 사용한반도체 장치
JP2006324634A (ja) 光電変換装置及びその作製方法、並びに半導体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121212

Termination date: 20220215