CN101243520B - 非易失性存储单元的编程 - Google Patents

非易失性存储单元的编程 Download PDF

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Publication number
CN101243520B
CN101243520B CN2006800305639A CN200680030563A CN101243520B CN 101243520 B CN101243520 B CN 101243520B CN 2006800305639 A CN2006800305639 A CN 2006800305639A CN 200680030563 A CN200680030563 A CN 200680030563A CN 101243520 B CN101243520 B CN 101243520B
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CN
China
Prior art keywords
voltage
applying
programming
programming voltage
source
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Expired - Fee Related
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CN2006800305639A
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English (en)
Chinese (zh)
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CN101243520A (zh
Inventor
克雷格·A·卡文斯
马丁·L·尼塞
劳伦·H·帕克
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN101243520A publication Critical patent/CN101243520A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
CN2006800305639A 2005-08-23 2006-08-16 非易失性存储单元的编程 Expired - Fee Related CN101243520B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/209,294 2005-08-23
US11/209,294 US7342833B2 (en) 2005-08-23 2005-08-23 Nonvolatile memory cell programming
PCT/US2006/031840 WO2007024565A2 (en) 2005-08-23 2006-08-16 Nonvolatile memory cell programming

Publications (2)

Publication Number Publication Date
CN101243520A CN101243520A (zh) 2008-08-13
CN101243520B true CN101243520B (zh) 2010-12-15

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CN2006800305639A Expired - Fee Related CN101243520B (zh) 2005-08-23 2006-08-16 非易失性存储单元的编程

Country Status (5)

Country Link
US (1) US7342833B2 (cg-RX-API-DMAC7.html)
JP (1) JP2009506472A (cg-RX-API-DMAC7.html)
CN (1) CN101243520B (cg-RX-API-DMAC7.html)
TW (1) TW200713281A (cg-RX-API-DMAC7.html)
WO (1) WO2007024565A2 (cg-RX-API-DMAC7.html)

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KR100771520B1 (ko) * 2006-10-23 2007-10-30 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7630250B2 (en) * 2007-10-16 2009-12-08 Spansion Llc Controlled ramp rates for metal bitlines during write operations from high voltage driver for memory applications
JP5384012B2 (ja) * 2008-01-24 2014-01-08 ローム株式会社 Ｅｅｐｒｏｍおよびそれを用いた電子機器
US7764550B2 (en) * 2008-11-25 2010-07-27 Freescale Semiconductor, Inc. Method of programming a non-volatile memory
US7929343B2 (en) * 2009-04-07 2011-04-19 Micron Technology, Inc. Methods, devices, and systems relating to memory cells having a floating body
US8369154B2 (en) * 2010-03-24 2013-02-05 Ememory Technology Inc. Channel hot electron injection programming method and related device
US8467245B2 (en) 2010-03-24 2013-06-18 Ememory Technology Inc. Non-volatile memory device with program current clamp and related method
CN103165188A (zh) * 2011-12-09 2013-06-19 中国科学院微电子研究所 一种多位非挥发存储单元及阵列的编程方法
CN112638199A (zh) * 2019-06-19 2021-04-09 法鲁克系统股份有限公司 包含熔岩石的头发造型装置
KR20230105274A (ko) * 2022-01-03 2023-07-11 에스케이하이닉스 주식회사 반도체 장치 및 반도체 장치의 제조 방법

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US6741502B1 (en) * 2001-09-17 2004-05-25 Sandisk Corporation Background operation for memory cells

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JPH02126498A (ja) * 1988-07-08 1990-05-15 Hitachi Ltd 不揮発性半導体記憶装置
JP3626221B2 (ja) * 1993-12-13 2005-03-02 株式会社東芝 不揮発性半導体記憶装置
JPH0773685A (ja) * 1993-09-06 1995-03-17 Hitachi Ltd 半導体不揮発性記憶装置
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US6490204B2 (en) * 2000-05-04 2002-12-03 Saifun Semiconductors Ltd. Programming and erasing methods for a reference cell of an NROM array
JP3922516B2 (ja) * 2000-09-28 2007-05-30 株式会社ルネサステクノロジ 不揮発性メモリと不揮発性メモリの書き込み方法
US7076610B2 (en) * 2000-11-22 2006-07-11 Integrated Device Technology, Inc. FIFO memory devices having multi-port cache memory arrays therein that support hidden EDC latency and bus matching and methods of operating same
US6738289B2 (en) 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
KR100390959B1 (ko) * 2001-06-29 2003-07-12 주식회사 하이닉스반도체 센싱회로를 이용한 멀티레벨 플래시 메모리 프로그램/리드방법
JP4200420B2 (ja) * 2002-06-13 2008-12-24 パナソニック株式会社 半導体記憶装置および半導体記憶装置の書き込み方法
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US6741502B1 (en) * 2001-09-17 2004-05-25 Sandisk Corporation Background operation for memory cells
CN1441480A (zh) * 2002-02-25 2003-09-10 力旺电子股份有限公司 一种非易失性存储单元的编程及擦除方法

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Also Published As

Publication number Publication date
CN101243520A (zh) 2008-08-13
US20070058434A1 (en) 2007-03-15
TW200713281A (en) 2007-04-01
JP2009506472A (ja) 2009-02-12
US7342833B2 (en) 2008-03-11
WO2007024565A2 (en) 2007-03-01
WO2007024565A3 (en) 2007-11-22

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