TW200713281A - Nonvolatile memory cell programming - Google Patents
Nonvolatile memory cell programmingInfo
- Publication number
- TW200713281A TW200713281A TW095129481A TW95129481A TW200713281A TW 200713281 A TW200713281 A TW 200713281A TW 095129481 A TW095129481 A TW 095129481A TW 95129481 A TW95129481 A TW 95129481A TW 200713281 A TW200713281 A TW 200713281A
- Authority
- TW
- Taiwan
- Prior art keywords
- programming
- vertical field
- electrons
- gate dielectric
- memory cell
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/209,294 US7342833B2 (en) | 2005-08-23 | 2005-08-23 | Nonvolatile memory cell programming |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200713281A true TW200713281A (en) | 2007-04-01 |
Family
ID=37772152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095129481A TW200713281A (en) | 2005-08-23 | 2006-08-11 | Nonvolatile memory cell programming |
Country Status (5)
Country | Link |
---|---|
US (1) | US7342833B2 (zh) |
JP (1) | JP2009506472A (zh) |
CN (1) | CN101243520B (zh) |
TW (1) | TW200713281A (zh) |
WO (1) | WO2007024565A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI407448B (zh) * | 2007-10-16 | 2013-09-01 | Spansion Llc | 在寫入操作期間用於金屬位元線之來自高電壓驅動器之經控制的斜波率於記憶體之應用 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100771520B1 (ko) * | 2006-10-23 | 2007-10-30 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
JP5384012B2 (ja) * | 2008-01-24 | 2014-01-08 | ローム株式会社 | Eepromおよびそれを用いた電子機器 |
US7764550B2 (en) * | 2008-11-25 | 2010-07-27 | Freescale Semiconductor, Inc. | Method of programming a non-volatile memory |
US7929343B2 (en) * | 2009-04-07 | 2011-04-19 | Micron Technology, Inc. | Methods, devices, and systems relating to memory cells having a floating body |
US8369154B2 (en) * | 2010-03-24 | 2013-02-05 | Ememory Technology Inc. | Channel hot electron injection programming method and related device |
US8467245B2 (en) | 2010-03-24 | 2013-06-18 | Ememory Technology Inc. | Non-volatile memory device with program current clamp and related method |
CN103165188A (zh) * | 2011-12-09 | 2013-06-19 | 中国科学院微电子研究所 | 一种多位非挥发存储单元及阵列的编程方法 |
ES2968461T3 (es) * | 2019-06-19 | 2024-05-09 | Farouk Systems Inc | Secador de pelo que contiene roca volcánica |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3553947A (en) | 1968-08-12 | 1971-01-12 | Root Mfg Co Inc | Grass catcher for lawnmowers |
US3820312A (en) | 1969-11-24 | 1974-06-28 | Scott & Sons Co O | Grass catcher |
US3822536A (en) | 1973-05-24 | 1974-07-09 | H Leader | Grass catcher |
JPS62190420U (zh) | 1986-05-24 | 1987-12-03 | ||
JPH02126498A (ja) * | 1988-07-08 | 1990-05-15 | Hitachi Ltd | 不揮発性半導体記憶装置 |
JP3626221B2 (ja) * | 1993-12-13 | 2005-03-02 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JPH0773685A (ja) * | 1993-09-06 | 1995-03-17 | Hitachi Ltd | 半導体不揮発性記憶装置 |
JPH10302486A (ja) * | 1996-08-30 | 1998-11-13 | Sanyo Electric Co Ltd | 半導体記憶装置 |
JPH10228784A (ja) * | 1997-02-12 | 1998-08-25 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
US6198662B1 (en) | 1999-06-24 | 2001-03-06 | Amic Technology, Inc. | Circuit and method for pre-erasing/erasing flash memory array |
US6490204B2 (en) * | 2000-05-04 | 2002-12-03 | Saifun Semiconductors Ltd. | Programming and erasing methods for a reference cell of an NROM array |
JP3922516B2 (ja) * | 2000-09-28 | 2007-05-30 | 株式会社ルネサステクノロジ | 不揮発性メモリと不揮発性メモリの書き込み方法 |
US7076610B2 (en) * | 2000-11-22 | 2006-07-11 | Integrated Device Technology, Inc. | FIFO memory devices having multi-port cache memory arrays therein that support hidden EDC latency and bus matching and methods of operating same |
US6738289B2 (en) | 2001-02-26 | 2004-05-18 | Sandisk Corporation | Non-volatile memory with improved programming and method therefor |
KR100390959B1 (ko) * | 2001-06-29 | 2003-07-12 | 주식회사 하이닉스반도체 | 센싱회로를 이용한 멀티레벨 플래시 메모리 프로그램/리드방법 |
US6741502B1 (en) * | 2001-09-17 | 2004-05-25 | Sandisk Corporation | Background operation for memory cells |
CN1188909C (zh) * | 2002-02-25 | 2005-02-09 | 力旺电子股份有限公司 | 一种非易失性存储单元的编程及擦除方法 |
JP4200420B2 (ja) * | 2002-06-13 | 2008-12-24 | パナソニック株式会社 | 半導体記憶装置および半導体記憶装置の書き込み方法 |
JP2004023044A (ja) * | 2002-06-20 | 2004-01-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
US6649453B1 (en) * | 2002-08-29 | 2003-11-18 | Micron Technology, Inc. | Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation |
KR100496866B1 (ko) * | 2002-12-05 | 2005-06-22 | 삼성전자주식회사 | 미프로그램된 셀들 및 과프로그램된 셀들 없이 균일한문턱 전압 분포를 갖는 플레쉬 메모리 장치 및 그프로그램 검증 방법 |
US6882567B1 (en) * | 2002-12-06 | 2005-04-19 | Multi Level Memory Technology | Parallel programming of multiple-bit-per-cell memory cells on a continuous word line |
US7093047B2 (en) * | 2003-07-03 | 2006-08-15 | Integrated Device Technology, Inc. | Integrated circuit memory devices having clock signal arbitration circuits therein and methods of performing clock signal arbitration |
US7209983B2 (en) * | 2003-07-03 | 2007-04-24 | Integrated Device Technology, Inc. | Sequential flow-control and FIFO memory devices that are depth expandable in standard mode operation |
JP4245437B2 (ja) * | 2003-08-08 | 2009-03-25 | シャープ株式会社 | 不揮発性半導体記憶装置の書き込み方法 |
US6937520B2 (en) * | 2004-01-21 | 2005-08-30 | Tsuyoshi Ono | Nonvolatile semiconductor memory device |
-
2005
- 2005-08-23 US US11/209,294 patent/US7342833B2/en active Active
-
2006
- 2006-08-11 TW TW095129481A patent/TW200713281A/zh unknown
- 2006-08-16 CN CN2006800305639A patent/CN101243520B/zh active Active
- 2006-08-16 JP JP2008527982A patent/JP2009506472A/ja active Pending
- 2006-08-16 WO PCT/US2006/031840 patent/WO2007024565A2/en active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI407448B (zh) * | 2007-10-16 | 2013-09-01 | Spansion Llc | 在寫入操作期間用於金屬位元線之來自高電壓驅動器之經控制的斜波率於記憶體之應用 |
Also Published As
Publication number | Publication date |
---|---|
WO2007024565A3 (en) | 2007-11-22 |
CN101243520B (zh) | 2010-12-15 |
US20070058434A1 (en) | 2007-03-15 |
JP2009506472A (ja) | 2009-02-12 |
CN101243520A (zh) | 2008-08-13 |
WO2007024565A2 (en) | 2007-03-01 |
US7342833B2 (en) | 2008-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200713281A (en) | Nonvolatile memory cell programming | |
US6744675B1 (en) | Program algorithm including soft erase for SONOS memory device | |
US7492636B2 (en) | Methods for conducting double-side-biasing operations of NAND memory arrays | |
TW200623137A (en) | Substrate electron injection techniques for programming non-volatile charge storage memory cells | |
TW200618260A (en) | Counteracting overtunneling in nonvolatile memory cells | |
US6778442B1 (en) | Method of dual cell memory device operation for improved end-of-life read margin | |
JP2011155266A5 (zh) | ||
TW200506952A (en) | Semiconductor device | |
TWI238413B (en) | Methods for enhancing erase of a memory device, programmable read-only memory device and method for preventing over-erase of an NROM device | |
US20170110194A1 (en) | Power Driven Optimization For Flash Memory | |
US7499336B2 (en) | Method of programming a nonvolatile memory cell and related memory array | |
WO2007008326A3 (en) | Memory architecture with enhanced over-erase tolerant control gate scheme | |
TW200935426A (en) | Operating method of memory device | |
US7859904B1 (en) | Three cycle memory programming | |
US7672159B2 (en) | Method of operating multi-level cell | |
TW200428397A (en) | Method of programming dual cell memory device to store multiple data states per cell | |
TWI376790B (en) | Two-bit non-volatile flash memory cells and methods of operating memory cells | |
US6768673B1 (en) | Method of programming and reading a dual cell memory device | |
US7561470B2 (en) | Double-side-bias methods of programming and erasing a virtual ground array memory | |
CN104751893B (zh) | 增强nor型flash可靠性的方法 | |
US7903471B2 (en) | Method for improving memory device cycling endurance by providing additional pulses | |
JP2005184028A (ja) | 不揮発性記憶素子 | |
US7554851B2 (en) | Reset method of non-volatile memory | |
AU2008252029A1 (en) | Method for programing a nonvolatile memory | |
JP5162075B2 (ja) | 不揮発性半導体メモリ及びその動作方法 |